P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V -2 G(1) S(2) Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS I D =-250μA,V GS =0V -60 - - V Zero Gate Voltage Drain Current I DSS V DS =-60V,V GS =0V - - -10 μa Gate-Body Leakage Current I GSS V DS =0V,V GS =±20V - - ±10 ua Gate Threshold Voltage V GS(th) V DS =V GS, I D =-250μA -1-3 V Static Drain-Source On-Resistance R DS(ON) V GS =-10V, I D =-1.8A - 110 180 mω V GS =-4.5V, I D =-1.4A - 130 200 mω Diode Forward Voltage V SD I S =-1.2A,V GS =0V -1.2 V Total Gate Charge Qg 6.3 nc Gate-Drain Charge Qgs V GS =-4.5V, V DS =-48V, I D =-1A 2.3 nc Input Capacitance Qgd 1.8 nc Input Capacitance C ISS - 364 pf Output Capacitance C DSS V GS =0V, V DS =-25V, f=1mhz - 41 pf Reverse Transfer Capacitance C RSS - 12 pf Gate Resistance Rg V GS =0V, V DS =0V,f=1MHz 9.8 Ω Turn-On Delay Time t d(on) - 20 Turn-On Rise Time t r V DD =-6V, V GS =-4.5V, 33.1 R L =6Ω, R G =6Ω, Turn-Off Delay Time t d(off) I D =-1A 5.2 ns Turn-Off Fall Time t f - 3.8 Rev.06 1 www.prisemi.com
Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Drain Current Continuous T A =25 I D -2 A Pulsed T A =70 I D -1.5 A Pulsed Drain Current I DM -7.6 A Total Power Dissipation T A =25 P D 1.4 W T A =70 P D 0.9 W Storage Temperature Range T STG -55 to +150 Thermal Resistance-Junction to Ambient* R θja 90 /W *The device mounted on 1in 2 FR4 board with 2 oz copper Typical Characteristics 2.0 0.20 1.8 On Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 RDS(ON) On-Resistance(Ω) 0.15 0.10 0.05 V GS =-4.5V V GS =-10V 0.6-50 0 50 100 150 0.00 0-1 -2-3 -4 T J -Junction Temperature( ) I D -Drain Current (A) Fig 1. On Resistance vs. Junction Temperature Fig 2. On-Resistance vs. Drain Current 500 0.10 C-Capacitance (pf) 400 300 200 100 C OSS C ISS RDS(ON) On-Resistance(Ω) 0.75 0.50 0.25 I D =-1A C RSS 0 0-5 -10-15 -20-25 -30 V DS -Drain-to-Source Voltage(V) Fig 3. Capacitance 0.00 0-2 -4-6 -8-10 V GS -Gate-to-Source Voltage (V) Fig 4. On-Resistance vs. Gate-to-Source Voltage Rev.06 2 www.prisemi.com
-0.2-12 V GS =-5~-10V VGS(th)-Variance(V) -0.1-0.0 0.1 0.2 I D =-250μA ID Drain Current (A) -9-6 -3 V GS =-4V V GS =-3.5V 0.3 0.4-50 0 50 100 150 T J -Temperature ( ) Fig 5. Threshold Voltage 0 0-1.0-2.0-3.0-4.0 V GS -Drain-to-Source Voltage (V) Fig 6. On-Region Characteristics 10-10 VGS-Gate-to-Source Voltage (V) 8 6 4 2 V DS =30V I D =2.6A IS Source Current (A) -1 0 0 3 6 9 12 QG-Total Gate Charge(nC) Fig 7. Gate Charge T A =25-0.1 0-0.2-0.4-0.6-0.8-1.0-1.2 V SD -Source-to-Drain Voltage (V) Fig 8. On-Resistance vs. Drain Current -1.4-100 R DS(ON) limited -10 ID-Drain Current(A) -1 1s 10ms 0.1s 10s 1ms -0.1 DC T A =25-0.01-0.1-1 -10-100 V DS -Drain- Source Voltage(V) Fig 9. Maximum Forward Biased Safe Operating Area Rev.06 3 www.prisemi.com
Normalized Effective Transient Thermal Impedance 1E0 1E-1 70% 50% 30% 10% 5% 2% t1 t2 1E-2 1% 1. Duty Cyde, D= t1 0.5% t2 2. Per Unit Base=Rth JA =90 /W (t) 3.T 0.2% JM -T A =P DM Zth JA 4.Surface Mounted Sing Pulse Curve 1E-3 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3 1E4 Square Wave Pulse Duration (sec) Fig 10.Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: P DM Product dimension(sot-23-3l) A (3) θ C B (1) (2) D E G F H K J Rev.06 4 www.prisemi.com
Dim Millimeters Inches MIN MAX MIN MAX A 2.82 3.02 0.111 0.119 B 1.50 1.70 0.059 0.067 C 2.65 2.95 0.104 0.116 D 0.950(BSC) 0.037(BSC) E 1.80 2.00 0.071 0.079 F 0.10 0.20 0.004 0.008 G 0.55(REF) 0.022(REF) H 0.30 0.50 0.012 0.020 J 1.05 1.15 0.041 0.045 K 0.00 0.10 0.000 0.004 θ 0 8 0 8 Rev.06 5 www.prisemi.com
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