Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs 6-8 ChipFET S S Bottom View G Marking Code BJ XXX Lot Traceability and ate Code Part # Code Ordering Information: Si5435BC-T-E3 (Lead (Pb)-free) Si5435BC-T-GE3 (Lead (Pb)-free and Halogen-free) G P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol 5 s Steady State Unit rain-source Voltage V S - 3 Gate-Source Voltage V GS ± V Continuous rain Current (T J = 5 C) a T A = 5 C - 5.9-4.3 I T A = 85 C - 4.3-3. A Pulsed rain Current I M - 3 Continuous Source Current a I S -. -. T A = 5 C Maximum Power issipation a.5.3 P T A = 85 C.3.7 W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) b, c 6 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t 5 s 4 5 R thja Steady State 8 95 C/W Maximum Junction-to-Foot (rain) Steady State R thjf 5 Notes: a. Surface Mounted on " x " FR4 board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ocument Number: 7337 S9-9-Rev. B, -Feb-9
Si5435BC SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V GS(th) V S = V GS, I = - 5 µa - - 3 V Gate-Body Leakage I GSS V S = V, V GS = ± V ± na V S = - 3 V, V GS = V - Zero Gate Voltage rain Current I SS V S = - 3 V, V GS = V, T J = 85 C - 5 µa On-State rain Current a I (on) V S - 5 V, V GS = - V - 3 A V GS = - V, I = - 4.3 A rain-source On-State Resistance a.35.45 R S(on) V GS = - 4.5 V, I = -.3 A.65.8 Ω Forward Transconductance a g fs V S = - 5 V, I = - 4.3 A 4 S iode Forward Voltage a V S I S = -. A, V GS = V -.8 -. V ynamic b Total Gate Charge Q g 6 4 Gate-Source Charge Q gs V S = - 5 V, V GS = - V, I = - 4.3 A.7 nc Gate-rain Charge Q gd 4. Gate Resistance R g f = MHz 8.5 Ω Turn-On elay Time t d(on) 8 5 Rise Time t r V = - 5 V, R L = 5 Ω Turn-Off elay Time t d(off) I - A, V GEN = - V, R g = 6 Ω 3 5 ns Fall Time t f 3 Source-rain Reverse Recovery Time t rr I F = -. A, di/dt = A/µs 5 5 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 3 V GS = thru 6 V 3 T C = - 55 C 5 5 V 5 I - rain Current (A) 5 4 V - rain Current (A) I 5 5 C 5 C 5 3 V 3 4 5 V S - rain-to-source Voltage (V) Output Characteristics 5 3 4 5 6 V GS - Gate-to-Source Voltage (V) Transfer Characteristics ocument Number: 7337 S9-9-Rev. B, -Feb-9
Si5435BC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted. - On-Resistance (Ω) R S(on) 6.8.4 V GS = 4.5 V V GS = V C - Capacitance (pf) 8 6 4 C oss C iss C rss. 5 5 5 3 I - rain Current (A) On-Resistance vs. rain Current 5 5 5 3 V S - rain-to-source Voltage (V) Capacitance.6 V S = 5 V I = 4.3 A V GS = 4.5 V I = 4.3 A - Gate-to-Source Voltage (V) 8 6 4 R S(on) - On-Resistance (Normalized).4.. V GS.8 3 6 9 5 8 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3. - Source Current (A) I S T J = 5 C T J = 5 C - On-Resistance (Ω) R S(on) 6.8.4 I = 4.3 A...4.6.8...4 V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage. 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage ocument Number: 7337 S9-9-Rev. B, -Feb-9 3
Si5435BC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted.6 5.5 Variance (V) V GS(th).4.3.. I = 5 µa Power (W) 4 3 - -. -.3-5 - 5 5 5 75 5 5-3 - - 6 T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power Limited by R S(on)* I M Limited P(t) =. - rain Current (A) I I (on) Limited T C = 5 C Single Pulse BVSS Limited. Safe Operating Area P(t) =. P(t) =. P(t) = P(t) = P(t) = C V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes: P M.5 t t t.. uty Cycle, = t. Per Unit Base = R thja = 8 C/W 3. T JM - T A = P M Z (t) thja Single Pulse 4. Surface Mounted. -4-3 - - 6 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 ocument Number: 7337 S9-9-Rev. B, -Feb-9
Si5435BC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance uty Cycle =.5..5.. -4 Single Pulse -3 - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7337. ocument Number: 7337 S9-9-Rev. B, -Feb-9 5
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