KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications: Industrial Inverters Servo Applications IGBT-Inverter Absolute Maximum Ratings (T C = unless otherwise specified) V CES Collector-Emitter Blocking Voltage V V GES Gate-Emitter Voltage ± V I C Continuous Collector Current T C = 80 A T C = 0 A I CM(1) Peak Collector Current Repetitive T J = 1 0 A t SC Short Circuit Withstand Time T J = 0 > μs P D Maximum Power Dissipation (IGBT) T C = T Jmax=0 2 W Characteristic Values (T J = unless otherwise specified) Symbol Description Test Conditions Min. Typ. Max. Units I CES Collector-Emitter Leakage Current V GE=0V,V CE =V CES T J = 1 ma I GES Gate-Emitter Leakage Current V GE=V GES,V CE= 0V T J = 0 na V GE(th) Gate-Emitter Threshold Voltage I C = 1 ma, V CE = V GE.3 6. V V CE(sat) Collector-Emitter Saturation Voltage I C=A,V GE = V Internal Circuit Diagram T J = 1.90 2. V T J = 1 2. V C ies Input Capacitance V CE = V, V GE = 0V, 3.4 nf C oes Output Capacitance f =1MHz 0. nf
KDGR12KE3 t d(on) Turn-on Delay Time 90 ns t r Rise Time 0 ns t d(off) Turn-off Delay Time V CC = 600V, I C = A, 260 ns t f Fall Time R G = Ω, V GE =±V, 2 ns E on Turn-on Switching Loss Inductive Load, T J = 2.41 mj E off Turn-off Switching Loss 1.26 mj E ts Total Switching Loss 3.67 mj t d(on) Turn-on Delay Time 8 ns t r Rise Time 0 ns t d(off) Turn-off Delay Time V CC = 600V, I C = A, 26 ns t f Fall Time R G = Ω, V GE =±V, 36 ns E on Turn-on Switching Loss Inductive Load, T J= 1 2.9 mj E off Turn-off Switching Loss 2.02 mj E ts Total Switching Loss 4.97 mj Q g Total Gate Charge V CE = 600V, I C = A, V GE = -V ~ +V nc RBSOA Reverse Bias Safe Operating Area I C = 0A,V CC = 960V,Vp =V, Rg = 4.7Ω, V GE = +V to 0V, T J =0 C Trapezoid SCSOA Short Circuit Safe Operating Area V CC = 600V, V GE = V, T J = 0 μs Diode-Inverter Absolute Maximum Ratings (T C = unless otherwise specified) V RRM Repetitive Peak Reverse Voltage V I F DC Forward Current A I FRM Repetitive Peak Forward Current 0 A Characteristic Values Symbol Description Conditions Min. Typ. Max. Units V F I rr Q rr E rec Forward Voltage Peak Reverse Recovery Current Recovered Charge Reverse Recovery Energy I F=A, V GE = 0V I F=A, di/dt = 8A/μs, V rr = 600V, V GE = -V T J = 2.0 T J = 0 2.2 T J = T J = 1 T J = 1.18 T J = 1 1.88 T J = 0.2 T J = 1 0.97 V A µc mj
Diode-Rectifier Absolute Maximum Ratings (T C = unless otherwise specified) KDGR12KE3 V RRM Repetitive Peak Reverse Voltage T J = 1800 V I FRMSM Forward Current RMS Maximum Per Diode T J =80 3 A I RMSmax Maximum RMS Current At Rectifier Output T J =80 4 A I FSM I 2 t Surge Current @t p= ms t p= ms T J = 280 T J =1 0 T J = 00 T J =1 370 Characteristic Value Symbol Description Conditions Min. Typ. Max. Units V F Forward Voltage I F=A IGBT-Brake-Chopper Absolute Maximum Ratings (T C = unless otherwise specified) T J = 1.0 1.1 T J = 1 1.0 V CES Collector-Emitter Blocking Voltage V V GES Gate-Emitter Voltage ± V I C Continuous Collector Current T C = 80 A T C = A I CM(1) Peak Collector Current Repetitive T J = 0 A P D Maximum Power Dissipation (IGBT) T C = T Jmax=0 180 W Characteristic Values Symbol Description Test Conditions Min. Typ. Max. Units I CES Collector-Emitter Leakage Current V GE=0V,V CE =V CES T J = 1 ma I GES Gate-Emitter Leakage Current V GE=V GES,V CE= 0V T J = 0 na V GE(th) Gate-Emitter Threshold Voltage I C = 1 ma, V CE = V GE.2 6. V V CE(sat) Collector-Emitter Saturation Voltage I C=A,V GE = V A A 2 s T J = 1.90 2. V T J = 1 2. V C ies Input Capacitance V CE = V, V GE = 0V, 1. nf C oes Output Capacitance f =1MHz 0.13 nf V
KDGR12KE3 t d(on) Turn-on Delay Time ns t r Rise Time 0 ns t d(off) Turn-off Delay Time V CC = 600V, I C = A, 260 ns t f Fall Time R G =68Ω, V GE =±V, 2 ns E on Turn-on Switching Loss Inductive Load, T J = 1.67 mj E off Turn-off Switching Loss 0.62 mj E ts Total Switching Loss 2.29 mj t d(on) Turn-on Delay Time 90 ns t r Rise Time 0 ns t d(off) Turn-off Delay Time V CC = 600V, I C = A, 27 ns t f Fall Time R G = 68Ω, V GE =±V, 360 ns E on Turn-on Switching Loss Inductive Load, T J= 1 2.08 mj E off Turn-off Switching Loss 1.13 mj E ts Total Switching Loss 3.21 mj Q g Total Gate Charge V CE = 600V, I C = A, V GE = -V ~ +V 14 nc RBSOA Reverse Bias Safe Operating Area I C = A,V CC = 960V, Vp =V, Rg = 4.7Ω, V GE=+V to 0V, T J =1 C Trapezoid SCSOA Short Circuit Safe Operating Area V CC = 600V, V GE = V, T J = 1 μs Diode-Brake-chopper Absolute Maximum Ratings (T C = unless otherwise specified) V RRM Repetitive Peak Reverse Voltage V I F DC Forward Current A I FRM Repetitive Peak Forward Current A Characteristic Values Symbol Description Test conditions Min. Typ. Max. Units V FM Forward Voltage I F=A I rr Q rr Peak Reverse Recovery Current Reverse Recovery Charge I F=A, di/dt =700A/μs, V rr = 600V, V GE = -V T J = 1.9 T J = 1 2.0 T J = T J = 1 T J = 1.02 T J = 1 2.17 V A µc
KDGR12KE3 NTC Thermistor Characteristic values Symbol Condition Typ. Max. Units R T C = kω R/R T C =0,R 0 =481Ω ± % P T C = 0 mw B /0 R 2=R exp[b /0(1/T 2-1/(298.K))] 3380 K B /80 R 2=R exp[b /80(1/T 2-1/(298.K))] 34 K Module Absolute Maximum Ratings Inverter& Brake& Rectifier Inverter& Brake& Rectifier T J Maximum Junction Temperature 0 T J op Operation Temperature - +0 T stg Storage Temperature - +1 V iso Isolation Voltage (All Terminals Shorted) f = 0Hz, 1minute 00 V Thermal characteristics Symbol Description Typ. Max. Units Inverter Brake R θjc Junction-To-Case (IGBT Part, Per Leg) 0.6 /W R θjc Junction-To-Case (Diode Part, Per Leg) 1.42 /W R θjc Junction-To-Case, IGBT 0.70 /W R θjc Junction-To-Case, diode 1.42 /W Rectifier R θjc Junction-To-Case, diode 0.90 /W Module R θcs Case-To-Sink (Conductive Grease Applied) 0. /W Mounting torque Mounting Screw:M 3.0.0 N m Weight Weight of Module 0 g Notes: (1) Repetitive Rating: Pulse width limited by max. Junction temperature
0 KDGR12KE3 4 Load Current(A) 3 Duty Cycle:0% TJ =1 TC =80 Rg= ohm,vge =V 1 Frequency(KHz) Fig.1 Typical Load Current vs. Frequency (Inverter) 0 4 3 VGE =V TJ =1 TJ = 0 4 3 TJ =1 VGE =17V VGE =V VGE =13V VGE =11V VGE =9V 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 VCE(V) Fig.2 Typical Output Characteristics- Inverter 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 VCE(V) Fig.3 Output Characteristics- Inverter
0 4 3 VGE =0V TJ =1 TJ = 0 KDGR12KE3 IF(A) Module Chip 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 VF(V) Fig.4 Forward Characteristics of FWD Inverter 0 0 0 0 600 800 00 VCES(V) Fig. Reverse Bias Safe Operation Area (RBSOA).0 4. 4.0 3. VCC =600V,VGE =+/-V, Rg = ohm,tj =1 Eoff Eon Erec E(mJ) 3.0 2. 2.0 1. 1.0 0. 3 4 0 4.0 3. 3.0 VCC =600V,VGE =+/-V, IC =A,TJ =1 Eoff Eon Erec E(mJ) 2. 2.0 1. 1.0 0. 3 Rg( ) Fig.6 Typical Switching Loss vs. Collector Current (Inverter) Fig.7 Typical Switching Loss vs. Gate Resistance (Inverter)
VGE =V TJ =1 TJ = VGE =0V TJ =1 TJ = KDGR12KE3 IF(A) 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 VCE(V) Fig.8 Typical Saturation Voltage Characteristics (Brake-Chopper- IGBT) 1.4 1.6 1.8 2.0 2.2 2.4 2.6 VF(V) Fig.9 Forward Characteristics of Diode (Brake-Chopper- FWD) 0 4 TJ = TJ =1 000 Rtyp 8000 3 6000 IF(A) R( ) 00 00 0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VF(V) Fig. Forward Characteristics of Rectifier Diode 0 60 70 80 90 0 1 1 TC( ) Fig.11 NTC Temperature characteristics 0.7 1.6 0.6 ZthJC:IGBT 1.4 ZthJC:Diode 0. 1.2 ZthJC(K/W) 0.4 0.3 0.2 0.1 ZthJC(K/W) 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 2 T(s) Fig.12 Transient thermal impedance (IGBT- Inverter) 0.0 0.001 0.01 0.1 1 3 T(s) Fig.13 Transient thermal impedance (Diode- Inverter)
KDGR12KE3 Internal Circuit Diagram: Package Outline (Unit: mm):