AUTOMOTIVE GRADE AUIRGP466D1 AUIRGP466D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses G Maximum Junction temperature 175 C 5 μs short circuit SOA E Square RBSOA n-channel 1% of the parts tested for 4X rated current (I LM ) Positive V CE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode C C Tight parameter distribution Lead-Free, RoHS Compliant E Automotive Qualified * C Benefits G High Efficiency in a wide range of applications E G C Suitable for a wide range of switching frequencies due to TO-247AC TO-247AD AUIRGP466D1 AUIRGP466D1-E Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRGP466D1 TO-247AC Tube 25 AUIRGP466D1 AUIRGP466D1-E TO-247AD Tube 25 AUIRGP466D1-E C V CES = 6V I C(Nominal) = 75A t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.7V G C E Gate Collector Em itter Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 14g I C @ T C = 1 C Continuous Collector Current 9 I NOMINAL Nominal Current 75 I CM Pulse Collector Current V GE = 15V 225 I LM Clamped Inductive Load Current V GE = 2V c 3 A I F NOMINAL Diode Nominal Currentd 75g I FM Diode Maximum Forward Current d 3 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P D @ T C = 25 C Maximum Power Dissipation 454 W P D @ T C = 1 C Maximum Power Dissipation 227 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.33 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode)f.53 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com 213 International Rectifier May 2, 213
2 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Col lector-to-e mitter B reakdown Vol tage 6 V V GE = V, I C = 2μA f ΔV (BR)CES/ΔT J T emperature Coeff. of Breakdown Vol tage.3 V/ C V GE = V, I C = 15mA (25 C-175 C) 1.7 2.1 I C = 75A, V GE = 15V, T J = 25 C d V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 75A, V GE = 15V, T J = 15 Cd 2.1 I C = 75A, V GE = 15V, T J = 175 Cd V GE(th) Gate Threshold Voltage 4. 6.5 V V CE = V GE, I C = 2.1mA ΔVGE( t h)/δtj Threshold Voltage temp. coefficient -13 mv/ C V CE = V GE, I C = 2mA (25 C - 175 C) gfe Forward Transconductance 5 S V CE = 5V, I C = 75A, PW = 25μs I CES Collector-to-Emitter Leakage Current 3. 2 μa V GE = V, V CE = 6V 1 ma V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop 1.6 1.77 V I F = 75A 1.54 I F = 75A, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 15 225 I C = 75A Q ge Gate-to-Emitter Charge (turn-on) 4 6 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) 6 9 V CC = 4V E on Turn-On Switching Loss 424 519 I C = 75A, V CC = 4V, V GE = 15V E off Turn-Off Switching Loss 217 36 μj R G = 1Ω, L = 1μH, T J = 25 C E total Total Switching Loss 641 825 E nergy l os s es i ncl ude tai l & di ode revers e recovery t d(on) Turn-On delay time 5 7 I C = 75A, V CC = 4V, V GE = 15V t r Rise time 8 1 ns R G = 1Ω, L = 1μH t d(off) Turn-Off delay time 2 23 TJ = 25 C t f Fall time 6 8 E on Turn-On Switching Loss 621 I C = 75A, V CC = 4V, V GE =15V E off Turn-Off Switching Loss 2815 μj R G =1Ω, L=1μH, T J = 175 C E total Total Switching Loss 925 E nergy l os s es i ncl ude tai l & di ode revers e recovery t d(on) Turn-On delay time 45 I C = 75A, V CC = 4V, V GE =15V t r Rise time 7 ns R G =1Ω, L=1μH t d(off) Turn-Off delay time 24 T J = 175 C t f Fall time 8 C ies Input Capacitance 447 V GE = V C oes Output Capacitance 35 pf V CC = 3V C res Reverse Transfer Capacitance 14 f = 1.Mhz T J = 175 C, I C = 3A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp 6V Rg = 1Ω, V GE = +2V to V SCSOA Short Circuit Safe Operating Area V CC = 4V, Vp 6V 5 μs Rg = 1Ω, V GE = +15V to V Erec Reverse Recovery Energy of the Diode 68 μj T J = 175 C t rr Diode Reverse Recovery Time 24 ns V CC = 4V, I F = 75A I rr Peak Reverse Recovery Current 5 A V GE = 15V, Rg = 1Ω, L =1μH Notes: V CC = 8% (V CES ), V GE = 2V, L = 1μH, R G = 5Ω, tested in production I LM 4A. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. R θ is measured at T J of approximately 9 C. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 12A. Package diode current limit is12a. Note that current limitations arising from heating of the device leads may occur.
I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) AUIRGP466D1/AUIRGP466D1-E 15 5 125 4 1 3 75 5 2 25 1 25 5 75 1 125 15 175 25 5 75 1 125 15 175 T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 1 Fig. 2 - Power Dissipation vs. Case Temperature 1 1μsec 1μsec 1 1 1msec 1 Tc = 25 C Tj = 175 C Single Pulse DC.1 1 1 1 1 3 Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V 1 1 1 1 1 3 Fig. 4 - Reverse Bias SOA T J = 175 C; V GE =2V 25 25 2 15 1 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V 2 15 1 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V 5 5 2 4 6 8 1 2 4 6 8 1 Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 6μs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 6μs 3 www.irf.com 213 International Rectifier May 2, 213
I CE (A) I F (A) AUIRGP466D1/AUIRGP466D1-E 3 3 25 V GE = 18V V GE = 15V V GE = 12V 25-4 C 25 C 175 C 2 V GE = 1V V GE = 8.V 2 15 15 1 1 5 5 2 18 16 14 2 4 6 8 1 Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 6μs. 1. 2. 3. 4. V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 6μs 2 18 16 14 12 1 8 I CE = 38A I CE = 75A I CE = 15A 12 1 8 I CE = 38A I CE = 75A I CE = 15A 6 6 4 4 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C 2 3 18 16 14 12 1 8 6 I CE = 38A I CE = 75A I CE = 15A I C, Collector-to-Emitter Current (A) 25 T J = 25 C 2 T J = 175 C 15 1 4 5 2 5 1 15 2 4 6 8 1 12 14 16 18 V GE (V) V GE, Gate-to-Emitter Voltage (V) Fig. 11 - Typical V CE vs. V GE T J = 175 C Fig. 12 - Typ. Transfer Characteristics V CE = 5V; tp = 6μs 4 www.irf.com 213 International Rectifier May 2, 213
Energy (μj) Energy (μj) I RR (A) 5 www.irf.com 213 International Rectifier May 2, 213 I RR (A) Swiching Time (ns) Swiching Time (ns) AUIRGP466D1/AUIRGP466D1-E 18 1 16 14 td OFF 12 1 8 E ON 1 t F 6 t R 4 E OFF td ON 2 25 5 75 1 125 15 1 5 1 15 I C (A) I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 175 C; L = 1μH; V CE = 4V, R G = 1Ω; V GE = 15V 15 Fig. 14 - Typ. Switching Time vs. I C T J = 175 C; L = 1μH; V CE = 4V, R G = 1Ω; V GE = 15V 1 13 11 1 td OFF 9 E ON 7 5 3 E OFF 1 t F t R td ON 1 25 5 75 1 Rg (Ω) Fig. 15 - Typ. Energy Loss vs. R G T J = 175 C; L = 1μH; V CE = 4V, I CE = 75A; V GE = 15V 6 1 2 4 6 8 1 12 R G (Ω) Fig. 16 - Typ. Switching Time vs. R G T J = 175 C; L = 1μH; V CE = 4V, I CE = 75A; V GE = 15V 55 55 R G = 1Ω 5 5 45 R G = 22Ω R G = 47Ω 45 4 4 35 R G = 1Ω 35 3 25 3 2 2 4 6 8 1 12 14 16 I F (A) Fig. 17 - Typ. Diode I RR vs. I F T J = 175 C 25 2 4 6 8 1 R G (Ω) Fig. 18 - Typ. Diode I RR vs. R G T J = 175 C
I RR (A) Capacitance (pf) Energy (μj) 6 www.irf.com 213 International Rectifier May 2, 213 Time (μs) Q RR (μc) V GE, Gate-to-Emitter Voltage (V) AUIRGP466D1/AUIRGP466D1-E 55 18 5 45 16 14 12 1 15A 1Ω 47Ω 22Ω 75A 4 8 1Ω 35 6 4 38A 3 4 5 6 7 di F /dt (A/μs) Fig. 19 - Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 75A; T J = 175 C 2 2 4 6 8 1 di F /dt (A/μs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 15V; T J = 175 C 35 R G = 1Ω 2 8 3 25 R G = 22Ω R G = 47Ω R G = 1Ω 15 T sc 6 2 1 I sc 4 Current (A) 15 5 2 1 5 25 75 125 175 I F (A) 8 1 12 14 16 18 V GE (V) 1 Fig. 21 - Typ. Diode E RR vs. I F T J = 175 C Fig. 22 - V GE vs. Short Circuit Time V CC = 4V; T C = 25 C 16 1 Cies 14 12 1 V CES = 4V V CES = 3V 8 1 Coes Cres 6 4 2 1 1 2 3 4 5 2 4 6 8 1 12 14 16 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 24 - Typical Gate Charge vs. V GE I CE = 75A; L = 485μH
7 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E 1 Thermal Response ( Z thjc ).1.1.1 D =.5.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 R 4 Ri ( C/W) τi (sec).738.9 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) τ 4 τ 4 τ C τ.9441.179.13424.2834.9294.182 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thjc ) 1 D =.5.1.1.1.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R 4.12.34 τ 4 τ 4 τ C τ.163.39.215.599.139.33585 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E L 1K DUT L VC C 8 V Rg DUT 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4x DC DUT 36V - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM C force 4μH D1 1K C sense Rg DUT VCC G force DUT.75μ E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
9 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E 7 6 5 9% I CE tf 14 12 1 7 6 5 tr TEST CURRENT 14 12 1 4 8 4 9% I CE 8 VCE (V) 3 2 1 1% I CE 6 4 2 ICE (A) VCE (V) 3 2 1 1% I CE 6 4 2 ICE (A) Eoff Loss -1-2 -.4 -.2.2.4.6 time(μs) Eon Loss -1-2 -.4 -.2.2.4.6 time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 175 C using Fig. CT.4 VF (V) 9 8 7 6 5 4 3 2 1-1 -2-3 -4-5 Peak I RR Q RR -6 -.2..2.4.6.8 time (μs) t RR Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 175 C using Fig. CT.4 Vce (V) 7 6 5 4 3 2 1-1 VCE ICE -3 3 6 9 12 Time (us) Fig. WF4 - Typ. S.C. Waveform @ T J = 25 C using Fig. CT.3 7 6 5 4 3 2 1-1 Ice (A)
1 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number IR Logo AUP466D1 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number IR Logo AUP466D1-E YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E Qualification Information Automotive (per AEC-Q11) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level TO-247AC TO-247AD N/A Machine Model Class M4 (+/-425V) AEC-Q11-2 ESD Human Body Model Class H2 (+/-4V) AEC-Q11-1 Charged Device Model Class C5 (+/-1125V) AEC-Q11-5 RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http//www.irf.com/ Highest passing voltage
13 www.irf.com 213 International Rectifier May 2, 213 AUIRGP466D1/AUIRGP466D1-E IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 11 N. Sepulveda Blvd., El Segundo, California 9245 Tel: (31) 252-715