4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Product Summary N-Channel P-Channel V DS (V) = 4V -4V I D = 6A (V GS =V) -A (V GS = -V) < 3mΩ (V GS =V) < 48mΩ (V GS = -V) < 4mΩ (V GS =4.V) < 7mΩ (V GS = -4.V) ESD rating: 3V (HBM) % UIS Tested % UIS Tested % Rg Tested % Rg Tested Top View SOIC-8 Bottom View D D Top View Pin S G S G D D D D G p-channel G S n-channel Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage 4-4 V Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Power Dissipation T A = T A =7 C T A = T A =7 C Junction and Storage Temperature Range V DS V GS I D I DM P D Avalanche Current B 3 7 I AR Repetitive avalanche energy.3mh B 43 E AR ± 6 3.8 T J, T STG - to - to C ± - -4 -.8 V A W A mj Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Symbol Device Typ Max Units n-ch 48 6. C/W R θja n-ch 74 C/W R θjl n-ch 3 C/W p-ch 48 6. C/W R θja p-ch 74 C/W R θjl p-ch 3 C/W
N Channel Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V 4 V I DSS Zero Gate Voltage Drain Current V DS =3V, V GS =V T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±V ± ma V GS(th) Gate Threshold Voltage V DS =V GS I D =µa. 3 V I D(ON) On state drain current V GS =V, V DS =V 3 A Static Drain-Source On-Resistance V GS =V, I D =6A V GS =4.V, I D =A 6 3 T J = 39 48 36 4 mω g FS Forward Transconductance V DS =V, I D =6A 8 S V SD Diode Forward Voltage I S =A,V GS =V.76 V I S Maximum Body-Diode Continuous Current 3 A DYNAMIC PARAMETERS C iss Input Capacitance 6 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 6 pf C rss Reverse Transfer Capacitance 38 pf R g Gate resistance V GS =V, V DS =V, f=mhz.6 3.9 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 8.4 nc Q g (4.V) Total Gate Charge 4. nc V GS =V, V DS =V, I D =6A Q gs Gate Source Charge.6 nc Q gd Gate Drain Charge.7 nc t D(on) Turn-On DelayTime 4.8 ns t r Turn-On Rise Time V GS =V, V DS =V, R L =3.3Ω, ns t D(off) Turn-Off DelayTime R GEN =3Ω 7 ns t f Turn-Off Fall Time. ns t rr Body Diode Reverse Recovery Time I F =6A, di/dt=a/µs 7.4 ns Q rr Body Diode Reverse Recovery Charge I F =6A, di/dt=a/µs.9 nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The value in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. Rev : Nov. µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 3 V V 4V 4.V V DS =V I D (A) I D (A) V GS =3.V 3 4 V DS (Volts) Figure : On-Region Characteristics -4 C. 3 3. 4 4. V GS (Volts) Figure : Transfer Characteristics.8 (mω) 4 3 V GS =4.V V GS =V Normalized On-Resistance.6.4..8 V GS =V I D =6A V GS =4.V I D =A I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.6 - - 7 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 7.E+ 6 I D =6A.E+ (mω) 4 3 I S (A).E-.E-.E-3.E-4-4 C 4 6 8 V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage.E-...4.6.8. V SD (Volts) Figure 6: Body-Diode Characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL V GS (Volts) 8 6 4 V DS =3V I D = 6A Capacitance (pf) 8 6 4 C oss Crss C iss 4 6 8 Q g (nc) Figure 7: Gate-Charge Characteristics 3 4 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps)... limited T J(Max) = C T A = s m.s µs ms µs Power (W) 4 3 T J(Max) = C T A =. DC.. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =6. C/W In descending order D=.,.3,.,.,.,., single pulse Single Pulse..... Figure : Normalized Maximum Transient Thermal Impedance P D T on T
P-Channel Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V -4 V I DSS V DS =-3V, V GS =V - Zero Gate Voltage Drain Current µa T J = C - I GSS Gate-Body leakage current V DS =V, V GS =±V ± µa V GS(th) Gate Threshold Voltage V DS =V GS I D =-µa - - -3 V I D(ON) On state drain current V GS =-V, V DS =-V - A V GS =-V, I D =-A 4 48 mω Static Drain-Source On-Resistance T J = 6 68 V GS =-4.V, I D =-4A 6 7 mω g FS Forward Transconductance V DS =-V, I D =-A S V SD Diode Forward Voltage I S =-A,V GS =V -.76 - V I S Maximum Body-Diode Continuous Current 3. A DYNAMIC PARAMETERS C iss Input Capacitance 6 pf C oss Output Capacitance V GS =V, V DS =-V, f=mhz pf C rss Reverse Transfer Capacitance 77 pf R g Gate resistance V GS =V, V DS =V, f=mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) 7.4 nc Q g (4.V) Total Gate Charge (4.V) 8.9 nc V GS =-V, V DS =-V, I D =-A Q gs Gate Source Charge 3. nc Q gd Gate Drain Charge 4.6 nc t D(on) Turn-On DelayTime 9.7 ns t r Turn-On Rise Time V GS =-V, V DS =-V, R L =4Ω, 6.3 ns t D(off) Turn-Off DelayTime R GEN =3Ω 3. ns t f Turn-Off Fall Time 6 ns t rr Body Diode Reverse Recovery Time I F =-A, di/dt=a/µs.8 ns Q rr Body Diode Reverse Recovery Charge I F =-A, di/dt=a/µs. nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any a given application depends on on the the user's specific board design. The current rating is is based on on the the t t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,,4 are obtained using 8 <3 µs µs pulses, pulses, duty duty cycle cycle.%.% max. max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA T A=. curve The provides SOA curve a single provides pulse rating. a single pulse rating. Rev : Nov. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3 -I D (A) -V -6V -V -4.V -4V -3.V -I D (A) V DS =-V -4 C V GS =-3V 3 4 -V DS (Volts) Fig : On-Region Characteristics.. 3 3. 4 4.. -V GS (Volts) Figure : Transfer Characteristics 8.8 (mω) 7 6 4 V GS =-4.V V GS =-V Normalized On-Resistance.6.4..8 V GS =-V I D =-A V GS =-4.V I D =-4A (mω) 3 4 6 8 8 6 4 -I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage I D =-A 3 4 6 7 8 9 -V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage -I S (A).6.E+.E+.E-.E-.E-3.E-4.E-.E-6 - - 7 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature -4 C...4.6.8. -V SD (Volts) Figure 6: Body-Diode Characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL -V GS (Volts) 8 6 4 V DS =-3V I D =-A -Q g (nc) Figure 7: Gate-Charge Characteristics Capacitance (pf) 4 8 6 4 C oss C rss C iss 3 4 -V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps).... T J(Max) = C, T A = limited s s µs ms ms DC µs.s Power (W) 4 3 T J(Max) = C T A =.. -V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =6. C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse P D T on T...... Figure : Normalized Maximum Transient Thermal Impedance(Note E)