2N4856JAN/JANTX/JANTXV Series. N-Channel JFETs. Vishay Siliconix

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Transcription:

N-Channel JFETs 2N4856JAN 2N4856JANTX 2N4856JANTX 2N4857JAN 2N4857JANTX 2N4857JANTX 2N4858JAN 2N4858JANTX 2N4858JANTX 2N4859JAN 2N4859JANTX 2N4859JANTX 2N4860JAN 2N4860JANTX 2N4860JANTX 2N4861JAN 2N4861JANTX 2N4861JANTX Part Number GS(off) () (BR)GSS Min () r DS(on) Max ( ) I D(off) Max (pa) t ON Typ (ns) 2N4856 4 to 10 40 25 250 9 2N4857 2 to 6 40 40 250 10 2N4858 0.8 to 4 40 60 250 20 2N4859 4 to 10 30 25 250 9 2N4860 2 to 6 30 40 250 10 2N4861 0.8 to 4 30 60 250 20 Low On-Resistance: 2N4856 <25 Fast Switching t ON : 4 ns High Off-Isolation I D(off) : 5 pa Low Capacitance: 3 pf Low Insertion Loss N-Channel Majority Carrier FET Low Error oltage High-Speed Analog Circuit Performance Negligible Off-Error, Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering High Radiation Tolerance Analog Switches Choppers Sample-and-Hold Normally On Switches Current Limiters The 2N4856JAN/JANTX/JANTX all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. TO-206AA (TO-18) Hermetically-sealed TO-206AA (TO-18) packaging allows full military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST111 series data sheet. For similar duals, see the 2N5564/5565/5566 data sheet. S 1 D 2 3 G and Case Top iew 7-1

Gate-Drain, oltage : (2N4856-58)....................... 40 (2N4859-61)....................... 30 Gate Current................................................. 50 ma Lead Temperature ( 1 / 16 from case for 10 seconds).............. 300 C Storage Temperature................................... 65 to 200 C Operating Junction Temperature.......................... 65 to 200 C Power Dissipation a........................................ 1800 mw Notes a. Derate 10.3 mw/ C to T C > 25 C Limits 2N4856 2N4857 2N4858 Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit Static Breakdown oltage (BR)GSS I G = 1 A, DS = 0 55 40 40 40 Cutoff oltage GS(off) DS = 15, I D = 0.5 na 4 10 2 6 0.8 4 Saturation Drain Current b I DSS DS = 15, GS = 0 50 175 20 100 8 80 ma GS = 20, DS = 0 5 250 250 250 pa Gate Reverse Current I GSS T A = 150 C 13 500 500 500 na Gate Operating Current c I G DG = 15, I D = 10 ma 5 DS = 15, GS = 10 5 250 250 250 pa Drain Cutoff Current I D(off) T A = 150 C 13 500 500 500 na I D = 5 ma 0.25 0.5 Drain-Source On-oltage DS(on) GS = 0 I D = 10 ma 0.35 0.5 I D = 20 ma 0.5 0.75 Drain-Source On-Resistance c r DS(on) GS = 0, I D = 1 ma 25 40 60 Forward oltage c GS(F) I G = 1 ma, DS = 0 0.7 Dynamic Forward Transconductancec g fs DG = 20, I D = 1 ma f = 1 khz Output Conductance c g os 6 ms 25 S Input Capacitance Reverse Transfer Capacitance C iss C rss DS = 0, GS = 10 f = 1 MHz 7 18 18 18 3 8 8 8 pf Equivalent Input Noise oltage c e DG = 10, I D = 10 ma n f = 1 khz Switching 3 n Hz t d(on) 2 6 6 10 Turn-On Time t DD = 10, GS(H) = 0 r See Switching Circuit 2 3 4 10 ns Turn-Off Time t OFF 13 25 50 100 7-2

Limits 2N4859 2N4860 2N4861 Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit Static Breakdown oltage (BR)GSS I G = 1 A, DS = 0 55 30 30 30 Cutoff oltage GS(off) DS = 15, I D = 0.5 na 4 10 2 6 0.8 4 Saturation Drain Current b I DSS DS = 15, GS = 0 50 175 20 100 8 80 ma GS = 15, DS = 0 5 250 250 250 pa Gate Reverse Current I GSS T A = 150 C 13 500 500 500 na Gate Operating Current c I G DG = 15, I D = 10 ma 5 DS = 15, GS = 10 5 250 250 250 pa Drain Cutoff Current I D(off) T A = 150 C 13 500 500 500 na I D = 5 ma 0.25 0.5 Drain-Source On-oltage DS(on) GS = 0 I D = 10 ma 0.35 0.5 I D = 20 ma 0.5 0.75 Drain-Source On-Resistance r DS(on) GS = 0, I D = 1 ma 25 40 60 Forward oltage GS(F) I G = 1 ma, DS = 0 0.7 Dynamic Forward Transconductancec g fs DG = 20, I D = 1 ma f = 1 khz Output Conductance c g os 6 ms 25 S Input Capacitance Reverse Transfer Capacitance C iss C rss DS = 0, GS = 10 f = 1 MHz 7 18 18 18 3 8 8 8 pf Equivalent Input Noise oltage c e DG = 10, I D = 10 ma n f = 1 khz Switching 3 n Hz t d(on) 2 6 6 10 Turn-On Time t DD = 10, GS(H) = 0 r See Switching Circuit 2 3 4 10 ns Turn-Off Time t OFF 19 25 50 100 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB b. Pulse test: PW 100 s duty cycle 10%. c. This parameter not registered with JEDEC. 7-3

4856/4859 4857/4860 4858/4861 GS(L) 10 6 4 R L * 464 953 1910 I D(on) 20 ma 10 ma 5 ma *Non-inductive Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 M Input Capacitance 1.5 pf INPUT IN t r <20 ns t f <20 ns t OFF OUTPUT 10% t d(on) 90% t r DD R L OUT GS(H) GS(L) 1 kω 51 Ω IN Scope 51 Ω 7-4

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