arxiv: v1 [math.na] 3 May 2013

Transcription

1 Non-symmetrc fnte networks: the two-pont resstance arxv: v [math.na] 3 May 203 Vera Černaňová and Juraj Brenkuš 2 Insttute of Computer Scence and Mathematcs, Slovak Unversty of Technology, Bratslava, Slovak Republc 2 Insttute of Electroncs and Photoncs, Slovak Unversty of Technology, Bratslava, Slovak Republc E-mal: {veracernanova}@hotmal.com Abstract. An explct formula for the resstance between two nodes n a network wth a nonsymmetrc Laplacan matrx L s obtaned. Ths s of great advantage e.g. n electronc crcut fault analyss, where non-lnear systems have to be solved repeatedly. Analyss tme can be greatly reduced by utlzaton of the obtaned formula. The presented approach s based on the mutual orthogonalty of the full system of left and rght-hand egenvectors of a dagonalzable matrx L. Some examples are gven that demonstrate the accuracy of the approach on crcut networks. PACS numbers: b, 02.0.Yn, Bh AMS classfcaton scheme numbers: 5A8, 94C2

2 Non-symmetrc fnte networks: the two-pont resstance 2. Introducton The computaton of the resstance between two nodes n a resstor network s a classcal problem n electrc crcut theory, ndeed t was studed by numerous authors over many years. Snce electrcal potentals on a grd are governed by the same dfference equatons as those occurrng n other problems, the computaton of the resstances can be appled to a wde range of problems, such as lattce Green s functons, random walks, the theory of harmonc functons and others. Due to varety of applcatons of the resstance problem and varous methods of soluton, ths problem s stll actual and ntensvely studed []. The resstance problem was often transformed n that of solvng the dfference equatons, whch s most convenently carred out for nfnte networks. Lttle attenton was pad to fnte networks, though these are occurrng n real lfe. In 2004, an mportant result for fnte lattces was publshed n [2]. He expressed the resstance between two arbtrary nodes n a resstor network n terms of egenvalues and egenvectors of the Laplacan matrx L assocated wth the network. In [2], the Laplacan L s a real symmetrc N N matrx wth N real egenvalues λ and an orthonormal bass of egenvectors ψ = (ψ,..., ψ N ). The resstance between the nodes α and β s gven by R αβ = ψ α ψ β 2 () λ However, f the Laplacan matrx of the network s non-symmetrc, the relaton () fals. In ths work, we study resstance networks wth a real Laplacan matrx L, symmetrc or not. The Laplacan L s a real dagonalzable N N matrx wth N real egenvalues λ and two bass of mutually orthogonal left and rght-hand egenvectors ϕ = (ϕ,..., ϕ N ) and ψ = (ψ,..., ψ N ). To our best knowledge, ths s the frst work that presents an explct formula for the total resstance between two nodes n a resstor network wth a real Laplacan matrx, n general non-symmetrc. The obtaned formula R αβ = λ ϕ ψ (ϕ α ϕ β )(ψ α ψ β ) (2) s an extenson of (). The method used n ths paper s smlar to that of [2], where the orthonormal bass of egenvectors of the matrx L s replaced by two mutually orthogonal bass of left and rght-hand egenvectors of L. The organzaton of the paper s as follows. In secton 2 our motvaton comng from the fault analyss of ntegrated crcuts s presented and the nodal conductance matrx of a crcut, whch s the Laplacan L, and some of ts propertes are descrbed. Secton 3 gves a theoretcal framework, whch s based on the theory of egenvalues and egenvectors of real matrces. The exstence of mutually orthogonal bass ϕ,..., ϕ N

3 Non-symmetrc fnte networks: the two-pont resstance 3 and ψ,..., ψ N of left and rght-hand egenvectors of a real dagonalzable matrx A s proved. Keepng the vectors ϕ,..., ϕ N ntact, a convenent bass of rght egenvectors s constructed. Then, the man result s formulated as theorem and proved n the second part of secton 3. Secton 4 s devoted to calculatng the two-pont resstance for several crcut networks. The formula proved n secton 3 s demonstrated on a smple brdge for two cases: smple egenvalues and multple egenvalues. Also, an example of resstance calculaton for a real lfe crcut, an operatonal amplfer, s gven. 2. Fault analyss - motvaton Today s ntegrated crcuts (ICs) represent complex systems realzed on a small area usng advanced fabrcaton technologes. At the early age of monolthc ntegraton (early sxtes), the fabrcaton process was domnated by yeld as low as 0% due to poor process control [3]. As the fabrcaton process has evolved, the process control reached acceptable lmts and the yeld mproved. On the other hand, wth the ncreasng resoluton, the fabrcaton process became more senstve to mpurtes of the envronment and had to be moved to controlled areas, where the ambent mpurty level was under control. These days, a typcal mxed-sgnal IC can consst of thousands to mllons of transstors, occupy an area of several tens of square mm, whle the fabrcaton process yeld wth resoluton as hgh as tens of nanometers s well above 90%. Anyhow, even n a well controlled envronment, the ambent stll exhbts certan level of mpurtes. Besdes, the fabrcaton process control s becomng even more complex and thus, resultng n a necessty to test the produced ICs. Durng the test development process, so called fault smulatons have to be conducted to determne the fault coverage of a gven test. If performed n a tradtonal way, ths step mght be rather tme consumng, snce t requres a huge amount of smulatons to be executed due to large amount of crcut nodes and possble faults taken nto account. Durng the smulaton, a set of nonlnear equatons descrbng the crcut has to be solved usng an teratve algorthm, e.g. Newton-Raphson. Applcaton of such an algorthm to crcut analyss s descrbed n [8]. The numercal approach to DC fault smulatons, presented n ths paper, evaluates the resstance between two arbtrary nodes of the crcut n a more tme effcent way. Ths evaluaton requres only one smulaton for the gven crcut confguraton, provdng nformaton on the operatng pont, to be executed. It means that a system of nonlnear equatons descrbng the crcut has to be solved only once for the gven operatng pont. From ths operatng pont nformaton, the crcut s nodal conductance matrx can be created and the resstance between the selected two nodes can be calculated. As has been already shown for symmetrcal matrces, such an approach can lead to a sgnfcant analyss tme reducton [4]. Ths resstance calculaton can be used n the development of resstance-based tests, e.g. I DDQ testng, where the resstance s ndrectly evaluated by measurng the current flowng from the supply source [5, 6]. For a crcut network, where actve elements such as MOS transstors are present, the nodal conductance matrx can

4 Non-symmetrc fnte networks: the two-pont resstance 4 become non-symmetrcal, snce voltage-controlled current sources (VCCS) are used to model such devces, as descrbed below. 2.. Nodal conductance matrx Formulaton of the nodal conductance matrx, whch s the Laplacan, s based on the Krchhoff current law (KCL) whch states the followng [7] j= c j (V V j ) = I =, 2,..., N. (3) Here, c j s the conductance of a resstor connected to nodes and j, V and V j are the electrcal potentals at nodes and j, and I s the current flowng nto the network at node. The prme denotes the omsson of the term = j. As a consequence, the followng constrant apples: I = 0. (4) = In general, a crcut of N nodes can be descrbed by a matrx equaton of the form: L V = I (5) or c c 2... c N c 2 c c 2N c N c N2... c NN V V 2 V N I I 2 =. I N, (6) where L s the Laplacan (nodal conductance matrx) wth elements c,..., c NN, V s a column vector of node potentals, and I s a column vector of ndependent current sources [8]. To compute the resstance between two arbtrary nodes α and β of the network, an external source has to be connected to these nodes. Let the current flowng from the source be I and the potentals at the two nodes V α and V β. Then the desred resstance s determned by the Ohm s law R αβ = V α V β. (7) I Now, the computaton s reduced to solvng (5) for V α and V β wth the current gven by I = I(δ α δ β ). (8)

5 Non-symmetrc fnte networks: the two-pont resstance 5 An mportant property of the L matrx s N c j = I. (9) V j = = From ths equaton follows, that snce the KCL requres the sum on the rght sde to be zero, the sum of conductances n each column of L s equal to zero. Another mportant property s gven by (0): V j N = c j = 0. (0) Snce V j s a nonzero voltage source, the sum must be equal to zero. Therefore, the sum of conductances n each row of L s equal to zero. As long as the network conssts of resstances only, the Laplacan remans symmetrc, snce for a resstve element of a conductance c connected between the nodes and j, the nodal conductance matrx L R can be expressed as follows: L R = ( j ) c c. () j c c If ths matrx s added to the Laplacan of the network, the symmetry of the Laplacan s mantaned. On the other hand, f a VCCS s present n the network, the Laplacan can become non-symmetrcal n cases when the nput termnals are connected to dfferent nodes as the output ones. In general, the nodal conductance matrx L V CCS of a VCCS, as depcted n fgure, can be wrtten as L V CCS = j j k k j j k g g 0 0. (2) k g g 0 0 Fgure : Voltage controlled current source Snce most of the real lfe crcuts contan actve elements that are represented by VCCSs, an extenson of the approach publshed n [2] to non-symmetrcal Laplacans s of great mportance.

6 Non-symmetrc fnte networks: the two-pont resstance 6 3. The two-pont resstance theorem In varous applcatons based on matrx theory, a dagonalzaton of a square matrx s needed. A real N N matrx A s dagonalzable, f there exsts an nvertble matrx P such that P AP = D, where D s a dagonal matrx. Here, column vectors of P are rght-hand egenvectors of A and row vectors of P are left-hand egenvectors. When the matrx A s symmetrc, the egenvectors can be chosen to form an orthonormal bass of R N. In ths case, P s an orthogonal matrx and P equals the transpose of P. The dagonal elements of D are egenvalues of both A as D. When a dagonalzable matrx A s non-symmetrc, the orthogonalty of egenvectors fals. Nevertheless, snce nether the orthogonalty of rght egenvectors nor that of left ones s necessary n our approach, ths problem can be overpassed. What we need, s the mutual orthogonalty of the left and rght egenvectors. Then, f Φ and Ψ denote matrces of left and rght-hand egenvectors of a square matrx A, the matrx ΦAΨ s dagonal. Its dagonal elements are not necessarlly the egenvalues of A. We state our man result as a theorem. In ts proof, we use a smlar method as n the proof of Theorem n [2]. From Krchhoff s law we know that at least one egenvalue of Laplacan matrx L s zero. We consder ths egenvalue smple and put λ = 0. The assocated left and rght-hand egenvectors are ϕ = (,,..., ) = ψ. The condton of orthogonalty of left and rght-hand egenvectors (ϕ ψ j = 0) ( j) can be fulflled for arbtrary dagonalzable matrx that satsfes any other condton of the followng theorem. Theorem. Consder a resstance network wth N nodes defned by a dagonalzable Laplacan matrx L not necessarly symmetrc. Suppose that L has N real egenvalues λ (ncludng the multplcty) wth left and rght-hand egenvectors ϕ = (ϕ,..., ϕ N ) and ψ = (ψ,..., ψ N ), where ϕ and ψ j are orthogonal f and only f j. Denote λ the zero egenvalue. Then the resstance between nodes α and β s gven by R αβ = λ ϕ ψ (ϕ α ϕ β )(ψ α ψ β ). Proof. Snce one of egenvalues of L s zero, ntroducng of ɛl to the Laplacan L wll be helpful. Thus we wll manpulate the Laplacan L(ɛ) = L + ɛl. The egenvalues of L(ɛ) are ɛ, λ 2 + ɛ,..., λ N + ɛ and for a sutable value of ɛ, no one of them equals zero. The left and rght-hand egenvectors are those of L. Smlarly as n [2], we wll compute the nverse functon G(ɛ) of L(ɛ). Naturally, L(ɛ) s not symmetrc, because L s not. Non-symmetrc matrces L and L(ɛ) are dagonalzable as follows: ΦLΨ = Λ and ΦL(ɛ)Ψ = Λ(ɛ), (3) where Φ s the matrx of left-hand egenvectors (rows) and Ψ that of rght-hand egenvectors (columns) of L and L(ɛ). Fnally, Λ(ɛ) s a dagonal matrx whose dagonal elements are (λ + ɛ)ϕ ψ j.

7 Non-symmetrc fnte networks: the two-pont resstance 7 Both Φ and Ψ are nvertble, because {ϕ,..., ϕ N } as well as {ψ,..., ψ N } defne a bass of R N. From (3) we obtan Hence Ψ L (ɛ)φ = Λ (ɛ). (4) G(ɛ) = ΨΛ (ɛ)φ. (5) Really, G(ɛ) s an nverse matrx of L(ɛ), because as well as G(ɛ)L(ɛ) = (ΨΛ (ɛ)φ)(φ Λ(ɛ)Ψ ) = I, L(ɛ)G(ɛ) = (Φ Λ(ɛ)Ψ )(ΨΛ (ɛ)φ) = I. From (5) t follows that elements of the matrx G(ɛ) are G αβ (ɛ) = ( ψ α = (λ + ɛ)ϕ ψ ) ϕ β = Nɛ + N ψ α ϕ β (λ + ɛ)ϕ ψ. (6) So, the functon G(ɛ) s explctly expressed. Now, return to the equaton L(ɛ) V (ɛ) = I and multply t from the left by G(ɛ). We obtan V (ɛ) = G(ɛ) I. Coordnates of the vector V (ɛ) are V (ɛ) = G j (ɛ)i j for =, 2,..., N. (7) j= Denote n (6) g αβ (ɛ) = ψ α ϕ β (λ + ɛ)ϕ ψ. (8) The substtuton of G j (ɛ) = (Nɛ) + g j (ɛ) n (7) yelds ( ) V (ɛ) = Nɛ + g j(ɛ) I j = I j + Nɛ j= j= g j (ɛ)i j. (9) Snce N I j = 0, we have V (ɛ) = N g j (ɛ)i j and we can put ɛ = 0.Ths gves = V = = g j I j, (20) = where V and g j replace V (0) and g j (0). We use (20) n R αβ = I (V α V β ) whch s (7) j= R αβ = I ( N g αj I j j= j= ) g βj I j = j= (g αj g βj ) I j I. (2)

8 Non-symmetrc fnte networks: the two-pont resstance 8 Due to (8) we obtan R αβ = (g αj g βj )(δ jα δ jβ ). (22) j= The last expresson can be smplfed as R αβ = (g αα g βα )( 0) + (g αβ g ββ )(0 ). (23) We ntroduce (8) wth ɛ = 0 and (23) becomes R αβ = ψ α ϕ α λ ϕ ψ ψ β ϕ α λ ϕ ψ + A smple rearrangement of the last relaton returns (2). ψ β ϕ β λ ϕ ψ ψ α ϕ β λ ϕ ψ. (24) 4. Examples In the followng examples, the proposed resstance calculaton approach s demonstrated on smple networks (crcuts). The calculatons were conducted usng GNU Octave language. The crcut analyss results were obtaned from Cadence IC desgn envronment. Example (smple egenvalues). R 2 VCCS R R2 R G 4 R 3 Fgure 2: A network of 4 nodes wth VCCS Consder the network depcted n fgure 2. For ths network, the nodal conductance matrx, whch s the Laplacan L, s the followng non-symmetrc matrx, where c = /R and c 2 = /R 2 : 2c c 0 c L = c + G 2c + c 2 c c 2 G 0 c 2c c c G c 2 c 2c + c 2 + G The egenvalues are λ = 0, λ 2 = 2c, λ 3 = 4c, λ 4 = 2c + 2c 2 + G. Snce the egenvectors are not requred to have the norm, we take those wth the least complcated entres. The left and rght-hand egenvectors are

9 Non-symmetrc fnte networks: the two-pont resstance 9 Φ T = ϕ ϕ 2 ϕ 3 ϕ 4 G(c 2c 2 G) 0 (c c 2 )(2c 2 + G) c G 0 (2c 2 + G)( c + c 2 + G) Ψ = ψ ψ 2 ψ 3 ψ 4 2c 2 G 2c + 2c 2 + G 0 G 2c 2c 2 3G 2c 2 + G 2c + 2c 2 + G 0 G 2c 2c 2 + G Usng (2), the resstance between two arbtrary nodes of the network can now be calculated. Below, examples of resstance calculaton follow. R 3 = (ϕ λ 2 ϕ 2 ϕ 23 )(ψ 2 ψ 23 ) + (ϕ 2ψ 2 λ 3 ϕ 3 ϕ 33 )(ψ 3 ψ 33 ) + 3ψ 3 + (ϕ λ 4 ϕ 4 ϕ 43 )(ψ 4 ψ 43 ) = R, 4ψ 4 R 24 = (ϕ λ 2 ϕ 22 ϕ 24 )(ψ 22 ψ 24 ) + (ϕ 2ψ 2 λ 3 ϕ 32 ϕ 34 )(ψ 32 ψ 34 ) + 3ψ 3 + λ 4 ϕ 4ψ 4 (ϕ 42 ϕ 44 )(ψ 42 ψ 44 ) = 2R R 2 2R + 2R 2 + GR R 2. Set the values of parameters R = 200Ω, R 2 = 4000Ω, G = 0.03S. All the possble twonode resstances consttute an N N upper trangular matrx where N s the network node count. The matrces of calculated resstance R c and resstance from crcut analyss R a are shown below. One can observe that R c = R a E E E + 0 R c = E E E E E E + 0 R a = E E E Example 2 (multple egenvalues). Consder the network depcted n fgure 3. Let c = /R. For ths network, the followng non-symmetrcal nodal conductance matrx, whch s the Laplacan L, can be created:

10 Non-symmetrc fnte networks: the two-pont resstance 0 Fgure 3: A network of 4 nodes wth VCCS 3c c c c L = c 3c c c c + G c 3c c G c G c c 3c + G The egenvalues are λ = 0, λ 2 = 4c, λ 3 = 4c, λ 4 = 4c + G. Note the multple egenvalue λ 2 = λ 3 = 4c. Left and rght-hand egenvectors ϕ and ψ of ths matrx are as follows: Φ T = ϕ ϕ 2 ϕ 3 ϕ Ψ = ψ ψ 2 ψ 3 ψ As can be observed, the left and rght-hand egenvectors are ndependent of c and G. An example calculaton of the frst row of the resstance matrx R c s gven below. We can use substtuton c = /R for ths calculaton. λ 2 ϕ 2ψ 2 = R 6, λ 3 ϕ 3ψ 3 = R 8, λ 4 ϕ 4ψ 4 = R 4 + GR, R 2 = R 6 ( + )( ) + R R ( + )( + ) + ( 0)(0 0) GR = 0 + R = R 2, R 3 = R 6 ( )( + 3) + R R ( 0)( + ) + ( 0)(0 ) GR = R 2 + R 4 R ( ) GR = R 4, 4 + GR R 4 = R 6 ( )( ) + R R ( 0)( ) + ( + )(0 + ) GR = R 4 + GR.

11 Non-symmetrc fnte networks: the two-pont resstance Now, set the values of parameters R = Ω and G = 2S. The values of resstances are R 2 = /2, R 3 = 7/2 and R 4 = /3. The complete resultng matrces of calculated resstance R c and resstance from crcut analyss R a are shown below. One can observe that R c = R a. 0 /2 7/2 /3 R c = 0 0 /2 5/ / E E E 0 R a = E E E Example 3 (operatonal amplfer). The crcut depcted n fgure 4 represents a typcal topology of an operatonal amplfer that s one of the most frequently used analog buldng block. Fgure 4: Crcut schematc of an operatonal amplfer Ths partcular crcut has been desgned for a standard 0.35µm mxed-sgnal CMOS process. Parameters of the devces obtaned from a typcal.op (operatng pont) analyss are shown n table. Table : Devce parameters of the operatonal amplfer gm[s] gds[s] Ron[Ω] M E E 03 - M E E 03 - M E E 06 - M E E 06 - M E E 06 - M E E 06 - R E + 04 These parameters are used to create an electrcal model of the crcut, where only

12 Non-symmetrc fnte networks: the two-pont resstance 2 resstances and voltage-controlled current sources (VCCS) are used. MOS transstor s modeled by a VCCS, whch s represented by a transconductance gm and a resstor of value /gds connected between ts output termnals, as depcted n fgure 5. Fgure 5: Smplfed electrcal model of a MOS transstor Usng the parameters from table, the followng non-symmetrcal nodal admttance matrx L of ths crcut can be created for the nternal nodes: 5.44E E E E E E E E E E 03 L = 0.000E E E E E E E E E E E E 06.94E E E 03 The node V dd s excluded from ths matrx, snce when assumng the mpedance between two nodes, all the voltage and current sources have to be substtuted by ther equvalent crcuts. Snce no parastc resstance s taken nto account, a voltage source s substtuted by a short, whle a current source s represented by an open. In our case, t means that the node V dd becomes shorted to node gnd. The order of network nodes assumed for ths matrx s n, n2, n3, n4, gnd. For the nodal admttance matrx, whch s the Laplacan L, the egenvalues obtaned are λ = 0, λ 2 =.67872E 04, λ 3 = E 03, λ 4 = E 03, λ 5 = E 03. The correspondng left and rght-hand egenvectors (n columns) of the matrx L are as follows:

13 Non-symmetrc fnte networks: the two-pont resstance 3 ϕ ϕ 2 ϕ 3 ϕ 4 ϕ Φ T = ψ ψ 2 ψ 3 ψ 4 ψ Ψ = The resultng matrces of the numercally calculated resstance R c and the resstance from the crcut analyss R a are shown below. One can observe that R c = R a E E E E E E E + 02 R c = E E E E E E E E E E + 02 R a = E E E

14 Non-symmetrc fnte networks: the two-pont resstance 4 5. Concluson A formula for resstance computaton between two arbtrary nodes of a network wth non-symmetrc Laplacan matrx L has been formulated and proved n ths paper. The calculaton s based on egenvalues and egenvectors of the Laplacan matrx. The applcaton of the formula s demonstrated on three examples of networks (crcuts): two resstve brdges and an operatonal amplfer. The calculated results are compared to results from a crcut smulator. In electrc crcut theory, resstor networks are a specal case of mpedance networks. In general, these are defned by a complex Laplacan matrx L. Our numercal results ndcate, that Theorem formulated n ths paper holds also for systems wth complex Laplacan matrx. Therefore, (2) should be applcable to computaton of the complex mpedance as well. References [] Owadat M Q, Hjjaw R S and Khalfeh J M 200 Intersttal sngle resstor n a network of resstors applcaton of the lattce Greens functon J. Phys. A: Math. Theor [2] Wu F Y 2004 Theory of resstor networks: the two-pont resstance Journal of Physcs A: Mathematcal and General [3] Klby J S 2000 Nobel Lecture: Turnng Potental nto Realty: The Inventon of the Integrated Crcut avalable onlne: przes/physcs/laureates/2000/klbylecture.html. [4] Brenkuš J, Stopjaková V and Gyepes G 203 Numercal method for DC fault analyss smplfcaton and smulaton tme reducton 6th IEEE Workshop on Desgn and Dagnostcs of Electronc Crcuts and Systems [5] Tsatouhas Y, Mosads Y, Hanotaks Th, Nkolos D and Arapoyann A 2002 A new technque for IDDQ testng n nanometer technologes Integraton, the VLSI Journal 3/ [6] Beresnsk M J, Borejko T, Pleskacz W A and Stopjaková V 2008 Bult-In Current Montor for IDDQ Testng n CMOS 90 nm Technology th IEEE Workshop on Desgn and Dagnostcs of Electronc Crcuts and Systems -4. [7] Krchhoff G 847 Über de Auflösung der Glechungen, auf welche man be der Untersuchung der lnearen Vertelung galvanscher Ströme geführt wrd Ann. Phys. Chem [8] Vlach J and Snghal K 994 Computer Methods for Crcut Analyss and Desgn Van Nostrand Renhold. [9] Meyer C D 200 Matrx Analyss and Appled Lnear Algebra Book and Solutons Manual SIAM: Socety for Industral and Appled Mathematcs.