DATA SHEET. BAS40 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Apr 28. Product specification Supersedes data of 1997 Oct 24

Size: px
Start display at page:

Download "DATA SHEET. BAS40 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Apr 28. Product specification Supersedes data of 1997 Oct 24"

Transcription

1 DISCRETE SEMICONDUCTORS DT SHEET age MD088 MD07 Supersedes data of 997 Oct pr 8

2 FETURES Low forward voltage Guard ring protected Small plastic SMD package Low diode capacitance. PPLICTIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION PINNING SOT (see Fig.a) PIN BS40 (see Fig.b) BS40-04 (see Fig.c) DESCRIPTION BS40-05 (see Fig.d) BS40-06 (see Fig.e) a a a k n.c. k a k k k,a k,k a,a handbook, columns handbook, columns Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The diodes BS40, BS40-04, BS40-05 and BS40-06 are encapsulated in a SOT small plastic SMD package. The BS40-07 is encapsulated in a SOT4B small plastic SMD package Top view MGC48 a. Simplified outline SOT. handbook, columns MGC485 c. BS40-04 handbook, columns MGC484 d. BS handbook, columns MRKING TYPE NUMBER BS40 BS40-04 BS40-05 BS40-06 BS40-07 Note MRKING CODE () p MGC48 n.c. b. BS40 single diode. e. BS Fig. Simplified outline (SOT) and symbols. MGC486. = p: Made in Hong Kong. = t: Made in Malaysia. handbook, halfpage 4 4 PINNING SOT4B (see Fig.) PIN BS40-07 DESCRIPTION Top view MM94 k k a 4 a Fig. Simplified outline (SOT4B) BS40-07 and symbol. 999 pr 8

3 LIMITING VLUES In accordance with the bsolute Maximum Rating System (IEC 4). SYMBOL PRMETER CONDITIONS MIN. MX. UNIT Per diode V R continuous reverse voltage 40 V I F continuous forward current 0 m I FRM repetitive peak forward current t p s;δ m I FSM non-repetitive peak forward current t p < 0 ms 00 m T stg storage temperature C T j junction temperature 50 C T amb operating ambient temperature C ELECTRICL CHRCTERISTICS T amb =5 C unless otherwise specified. SYMBOL PRMETER CONDITIONS MX. UNIT Per diode V F forward voltage see Fig. I F =m 80 mv I F =0m 500 mv I F =40m V I R reverse current V R = 0 V; note ; see Fig.4 µ V R = 40 V; note ; see Fig.4 0 µ C d diode capacitance f = MHz; V R = 0 ; see Fig.6 5 pf Note. Pulse test: t p = 00 µs; δ = 0.0. THERML CHRCTERISTICS SYMBOL PRMETER CONDITIONS VLUE UNIT R th j-a thermal resistance from junction to ambient note 500 K/W Note. Refer to SOT or SOT4B standard mounting conditions. 999 pr 8

4 GRPHICL DT handbook, 0halfpage I F (m) 0 MLC6-0 handbook, halfpage I R (µ) 0 () MLC6 0 () () () (4) () 0 0 () V F (V) () T amb = 50 C. () T amb =85 C. () T amb =5 C. (4) T amb = 40 C. 0 0 () T amb = 50 C. () T amb =85 C. () T amb =5 C VR (V) Fig. Forward current as a function of forward voltage; typical values. Fig.4 Reverse current as a function of reverse voltage; typical values. 0 handbook, halfpage r diff (Ω) MLC64 5 handbook, halfpage C d (pf) 4 MLC I (m) 0 F V R (V) f = 0 khz. f = MHz T amb =5 C. Fig.5 Differential forward resistance as a function of forward current; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 999 pr 8 4

5 PCKGE OUTLINES Plastic surface mounted package; leads SOT D B E X H E v M Q c e bp w M B Lp e detail X 0 mm scale DIMENSIONS (mm are the original dimensions) UNIT max.. mm b p c D E e e H E L p Q v w OUTLINE VERSION REFERENCES IEC JEDEC EIJ EUROPEN PROJECTION ISSUE DTE SOT pr 8 5

6 Plastic surface mounted package; 4 leads SOT4B D B E X y v M H E e b p w M B 4 Q c b Lp e detail X 0 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm. 0.9 max 0. b p b c D.0.8 E.4. e.9 e.7 H E.5. L p Q v 0. w y OUTLINE VERSION REFERENCES IEC JEDEC EIJ EUROPEN PROJECTION ISSUE DTE SOT4B pr 8 6

7 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 4). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT PPLICTIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 999 pr 8 7

8 a worldwide company rgentina: see South merica ustralia: 4 Waterloo Road, NORTH RYDE, NSW, Tel , Fax ustria: Computerstr. 6, -0 WIEN, P.O. Box, Tel , Fax Belarus: Hotel Minsk Business Center, Bld., r., Volodarski Str. 6, 0050 MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South merica Bulgaria: Philips Bulgaria Ltd., Energoproject, 5th floor, 5 James Bourchier Blvd., 407 SOFI, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel , Fax China/Hong Kong: 50 Hong Kong Industrial Technology Centre, 7 Tat Chee venue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South merica Czech Republic: see ustria Denmark: Sydhavnsgade, 780 COPENHGEN V, Tel , Fax Finland: Sinikalliontie, FIN-060 ESPOO, Tel , Fax France: 5 Rue Carnot, BP7, 956 SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D-0097 HMBURG, Tel , Fax Hungary: see ustria India: Philips INDI Ltd, Band Box Building, nd floor, 54-D, Dr. nnie Besant Road, Worli, MUMBI , Tel , Fax Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-00, JKRT 50, Tel ext. 50, Fax Ireland: Newstead, Clonskeagh, DUBLIN 4, Tel , Fax Israel: RPC Electronics, 7 Kehilat Saloniki St, PO Box 805, TEL VIV 680, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre, 04 MILNO, Tel , Fax Japan: Philips Bldg -7, Kohnan -chome, Minato-ku, TOKYO , Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, 4600 PETLING JY, SELNGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 00, EL PSO, TEXS 79905, Tel , Fax Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: Wagener Place, C.P.O. Box 04, UCKLND, Tel , Fax Norway: Box, Manglerud 06, OSLO, Tel , Fax Pakistan: see Singapore Philippines: Philippines Inc., 06 Valero St. Salcedo Village, P.O. Box 08 MCC, MKTI, Metro MNIL, Tel , Fax Poland: Ul. Lukiska 0, PL 04- WRSZW, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 5, 9048 MOSCOW, Tel , Fax Singapore: Lorong, Toa Payoh, SINGPORE 976, Tel , Fax Slovakia: see ustria Slovenia: see Italy South frica: S.. PHILIPS Pty Ltd., 95-5 Main Road Martindale, 09 JOHNNESBURG, P.O. Box 740 Johannesburg 000, Tel , Fax South merica: l. Vicente Pinzon, 7, 6th floor, SÃO PULO, SP, Brazil, Tel , Fax Spain: Balmes, BRCELON, Tel , Fax Sweden: Kottbygatan 7, kalla, S-6485 STOCKHOLM, Tel , Fax Switzerland: llmendstrasse 40, CH-807 ZÜRICH, Tel Fax Taiwan:, 6F, No. 96, Chien Kuo N. Rd., Sec., TIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THILND) Ltd., 09/ Sanpavuth-Bangna Road Prakanong, BNGKOK 060, Tel , Fax Turkey: Talatpasa Cad. No. 5, GÜLTEPE/ISTNBUL, Tel , Fax Ukraine: PHILIPS UKRINE, 4 Patrice Lumumba str., Building B, Floor 7, 504 KIEV, Tel , Fax United Kingdom: Ltd., 76 Bath Road, Hayes, MIDDLESEX UB 5BX, Tel , Fax United States: 8 East rques venue, SUNNYVLE, C , Tel , Fax Uruguay: see South merica Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 000 BEOGRD, Tel , Fax For all other countries apply to:, International Marketing & Sales Communications, Building BE-p, P.O. Box 8, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V. 999 SC6 ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 500/00/04/pp8 Date of release: 999 pr 8 Document order number:

DATA SHEET. BAS70 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Jun 01. Product specification Supersedes data of 1996 Oct 01

DATA SHEET. BAS70 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Jun 01. Product specification Supersedes data of 1996 Oct 01 DISCRETE SEMICONDUCTORS DT SHEET age MD088 MD07 BS70 series Supersedes data of 996 Oct 0 999 Jun 0 BS70 series FETURES Low forward current High breakdown voltage Guard ring protected Small plastic SMD

More information

DATA SHEET. BCV62 PNP general purpose double transistor DISCRETE SEMICONDUCTORS Apr 08. Product specification Supersedes data of 1997 Jun 18

DATA SHEET. BCV62 PNP general purpose double transistor DISCRETE SEMICONDUCTORS Apr 08. Product specification Supersedes data of 1997 Jun 18 DISCRETE SEMICONDUCTORS DT SHEET M3D071 PNP general purpose double transistor Supersedes data of 1997 Jun 18 1999 pr 08 FETURES Low current (max. 100 m) Low voltage (max. 30 V) Matched pair. PPLICTIONS

More information

DATA SHEET. BAS40 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 28.

DATA SHEET. BAS40 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 28. DISCRETE SEMICONDUCTORS DT SHEET age MD088 MD07 BS40 series Supersedes data of 999 pr 8 00 Oct 0 BS40 series FETURES Low forward voltage Guard ring protected Small plastic SMD packages Low diode capacitance.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BF1107; BF1107W N-channel single gate MOS-FETs. Product specification Supersedes data of 1998 Jun 22.

DISCRETE SEMICONDUCTORS DATA SHEET. BF1107; BF1107W N-channel single gate MOS-FETs. Product specification Supersedes data of 1998 Jun 22. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1998 Jun 22 1999 May 14 FETURES Currentless RF switch. PPLICTIONS Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver

More information

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D049. 1PS76SB70 Schottky barrier diode. Product specification 1998 Jul 16

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D049. 1PS76SB70 Schottky barrier diode. Product specification 1998 Jul 16 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1998 Jul 16 FEATURES Low forward voltage Guard ring protected Very small plastic SMD package Low diode capacitance. DESCRIPTION Planar encapsulated

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D173. PRF949 UHF wideband transistor. Preliminary specification 1999 Oct 29

DISCRETE SEMICONDUCTORS DATA SHEET M3D173. PRF949 UHF wideband transistor. Preliminary specification 1999 Oct 29 DISCRETE SEMICONDUCTORS DT SHEET M3D173 1999 Oct 29 FETURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PINNING SOT416 (SC75) PIN DESCRIPTION 1 base

More information

DATA SHEET. BB149 UHF variable capacitance diode DISCRETE SEMICONDUCTORS Sep 15. Product specification Supersedes data of 1996 May 03.

DATA SHEET. BB149 UHF variable capacitance diode DISCRETE SEMICONDUCTORS Sep 15. Product specification Supersedes data of 1996 May 03. DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D049 Supersedes data of 1996 May 03 1998 Sep 15 FEATURES Excellent linearity Excellent matching to 1% DMA Very small plastic SMD package C28: 2.1 pf; ratio 9

More information

DATA SHEET. BD131 NPN power transistor DISCRETE SEMICONDUCTORS Apr 12. Product specification Supersedes data of 1997 Mar 04.

DATA SHEET. BD131 NPN power transistor DISCRETE SEMICONDUCTORS Apr 12. Product specification Supersedes data of 1997 Mar 04. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 Supersedes data of 1997 Mar 04 1999 Apr 12 FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications.

More information

DATA SHEET. BAT120 series Schottky barrier double diodes DISCRETE SEMICONDUCTORS Jan 21

DATA SHEET. BAT120 series Schottky barrier double diodes DISCRETE SEMICONDUCTORS Jan 21 DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 File under Discrete Semiconductors, SC01 1998 Jan 21 FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time

More information

DATA SHEET. BC807W PNP general purpose transistor DISCRETE SEMICONDUCTORS May 18. Product specification Supersedes data of 1997 Jun 09

DATA SHEET. BC807W PNP general purpose transistor DISCRETE SEMICONDUCTORS May 18. Product specification Supersedes data of 1997 Jun 09 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 Supersedes data of 1997 Jun 09 1999 May 18 FEATURES PINNING High current (max. 500 ma) Low voltage (max. 45 V). APPLICATIONS General purpose switching

More information

DATA SHEET. BC849; BC850 NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 08. Product specification Supersedes data of 1998 Aug 06

DATA SHEET. BC849; BC850 NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 08. Product specification Supersedes data of 1998 Aug 06 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1998 Aug 06 1999 Apr 08 FEATURES Low current (max. 100 ma) Low voltage (max. 45 V). APPLICATIONS General purpose switching and

More information

DATA SHEET. BCW60 series NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 22. Product specification Supersedes data of 1997 Mar 10

DATA SHEET. BCW60 series NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 22. Product specification Supersedes data of 1997 Mar 10 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1997 Mar 10 1999 Apr 22 FEATURES Low current (max. 100 ma) Low voltage (max. 32 V). APPLICATIONS General purpose switching and

More information

DATA SHEET. 2N1613 NPN medium power transistor DISCRETE SEMICONDUCTORS Apr 11

DATA SHEET. 2N1613 NPN medium power transistor DISCRETE SEMICONDUCTORS Apr 11 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 FEATURES Low current (max. 500 ma) Low voltage (max. 50 V).

More information

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jun 02 1999 Apr 27 FEATURES High current (max. 600 ma) Low voltage (max. 60 V). APPLICATIONS Switching and linear amplification.

More information

DATA SHEET. PDTC114ET NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1998 Nov 26

DATA SHEET. PDTC114ET NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1998 Nov 26 DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 Supersedes data of 998 Nov 26 999 Apr 5 FEATURES Built-in bias resistors R and R2 (typ. 0 kω each) Simplification of circuit design Reduces number of

More information

DATA SHEET. BSR15; BSR16 PNP switching transistors DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1997 May 14

DATA SHEET. BSR15; BSR16 PNP switching transistors DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1997 May 14 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1997 May 14 1999 Apr 15 FEATURES PINNING High current (max. 600 ma) Low voltage (max. 60 V). APPLICATIONS Medium power switching.

More information

DATA SHEET. PZT3906 PNP switching transistor DISCRETE SEMICONDUCTORS Apr 14. Product specification Supersedes data of 1997 May 27

DATA SHEET. PZT3906 PNP switching transistor DISCRETE SEMICONDUCTORS Apr 14. Product specification Supersedes data of 1997 May 27 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 Supersedes data of 1997 May 27 1999 Apr 14 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V). APPLICATIONS High-speed switching. PINNING

More information

DATA SHEET. PUMD3 NPN/PNP resistor-equipped transistors DISCRETE SEMICONDUCTORS Apr 13. Product specification Supersedes data of 1998 Nov 26

DATA SHEET. PUMD3 NPN/PNP resistor-equipped transistors DISCRETE SEMICONDUCTORS Apr 13. Product specification Supersedes data of 1998 Nov 26 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 NPN/PNP resistor-equipped transistors Supersedes data of 1998 Nov 26 1999 Apr 13 FEATURES Transistors with different polarity and built-in bias

More information

DATA SHEET. BD132 PNP power transistor DISCRETE SEMICONDUCTORS Mar 04

DATA SHEET. BD132 PNP power transistor DISCRETE SEMICONDUCTORS Mar 04 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 FEATURES High current (max. 3 A) Low voltage (max. 45 V).

More information

DATA SHEET. 2N4036 PNP switching transistor DISCRETE SEMICONDUCTORS Jun 19

DATA SHEET. 2N4036 PNP switching transistor DISCRETE SEMICONDUCTORS Jun 19 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 FEATURES High current (max. 1 A) Low voltage (max. 65 V).

More information

DATA SHEET. PMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS Apr 27. Product specification Supersedes data of 1997 May 20

DATA SHEET. PMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS Apr 27. Product specification Supersedes data of 1997 May 20 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1997 May 20 1999 Apr 27 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V). APPLICATIONS Telephony and professional communication

More information

DATA SHEET. BFR53 NPN 2 GHz wideband transistor DISCRETE SEMICONDUCTORS Oct 28

DATA SHEET. BFR53 NPN 2 GHz wideband transistor DISCRETE SEMICONDUCTORS Oct 28 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 28 FEATURES PINNING Very low intermodulation distortion Very high power gain. APPLICATIONS

More information

DATA SHEET. BC546; BC547 NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1997 Mar 04

DATA SHEET. BC546; BC547 NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1997 Mar 04 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 04 1999 Apr 15 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and

More information

DATA SHEET. BSP15; BSP16 PNP high-voltage transistors DISCRETE SEMICONDUCTORS Apr 09

DATA SHEET. BSP15; BSP16 PNP high-voltage transistors DISCRETE SEMICONDUCTORS Apr 09 DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 FEATURES High voltage (max. 350 V). APPLICATIONS Switching

More information

DATA SHEET. BF419 NPN high-voltage transistor DISCRETE SEMICONDUCTORS Apr 09

DATA SHEET. BF419 NPN high-voltage transistor DISCRETE SEMICONDUCTORS Apr 09 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 FEATURES Low current (max. 100 ma) High voltage (max. 250

More information

DATA SHEET. KMZ10A Magnetic field sensor DISCRETE SEMICONDUCTORS Mar 24

DATA SHEET. KMZ10A Magnetic field sensor DISCRETE SEMICONDUCTORS Mar 24 DISCRETE SEMICONDUCTORS DATA SHEET M3D329 Supersedes data of 1996 Nov 8 File under Discrete Semiconductors, SC17 1998 Mar 2 DESCRIPTION The is an extremely sensitive magnetic field sensor, employing the

More information

DATA SHEET. BC807; BC808 PNP general purpose transistors DISCRETE SEMICONDUCTORS Feb 28

DATA SHEET. BC807; BC808 PNP general purpose transistors DISCRETE SEMICONDUCTORS Feb 28 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Feb 28 FEATURES High current (max. 500 ma) Low voltage (max. 45

More information

DATA SHEET. 2N4401 NPN switching transistor DISCRETE SEMICONDUCTORS May 07

DATA SHEET. 2N4401 NPN switching transistor DISCRETE SEMICONDUCTORS May 07 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 07 FEATURES High current (max. 600 ma) Low voltage (max. 40

More information

DATA SHEET. 2N2219; 2N2219A NPN switching transistors DISCRETE SEMICONDUCTORS Sep 03

DATA SHEET. 2N2219; 2N2219A NPN switching transistors DISCRETE SEMICONDUCTORS Sep 03 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 1997 Sep 03 FEATURES High current (max. 800 ma) Low voltage (max. 40 V).

More information

DATA SHEET. BS108 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS

DATA SHEET. BS108 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary

More information

DATA SHEET. BFQ256; BFQ256A PNP video transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BFQ256; BFQ256A PNP video transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1997 Oct 02 FEATURES High breakdown voltages Low output capacitance High gain bandwidth Good

More information

DATA SHEET. BSR17A NPN switching transistor DISCRETE SEMICONDUCTORS Jun 02

DATA SHEET. BSR17A NPN switching transistor DISCRETE SEMICONDUCTORS Jun 02 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V).

More information

DATA SHEET. BFR30; BFR31 N-channel field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BFR30; BFR31 N-channel field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET BFR3; BFR31 Supersedes data of April 1991 File under Discrete Semiconductors, SC7 1997 Dec 5 BFR3; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect

More information

DATA SHEET. BC556; BC557; BC558 PNP general purpose transistors DISCRETE SEMICONDUCTORS Mar 27

DATA SHEET. BC556; BC557; BC558 PNP general purpose transistors DISCRETE SEMICONDUCTORS Mar 27 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 FEATURES PINNING Low current (max. 100 ma) Low voltage (max.

More information

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS Mar 27

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS Mar 27 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V).

More information

PSMN K. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

PSMN K. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor Rev. 6 January 2 Product specification. Description SiliconMX products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96- (SO8) package. Product

More information

DATA SHEET. BSS89 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Apr 24

DATA SHEET. BSS89 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Apr 24 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b 1998 Apr 24 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown.

More information

DATA SHEET. PHP1025 P-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS

DATA SHEET. PHP1025 P-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC13b 1998 Feb 18 FEATURES Very low R DSon at low threshold High-speed switching No secondary breakdown Direct interface to C-MOS,

More information

DATA SHEET. BSS84 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Jun 18

DATA SHEET. BSS84 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Jun 18 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1995 Apr 7 File under Discrete Semiconductors, SC13b 1997 Jun 18 FEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching

More information

DATA SHEET. BS107 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS

DATA SHEET. BS107 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary

More information

DATA SHEET. PHN1013 N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS Jun 20

DATA SHEET. PHN1013 N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS Jun 20 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC13b 1997 Jun 20 FEATURES Very low on-state resistance. APPLICATIONS DC to DC converters General purpose switching applications.

More information

DATA SHEET. BFQ540 NPN wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1998 Aug May 23.

DATA SHEET. BFQ540 NPN wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1998 Aug May 23. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1998 Aug 27 2000 May 23 FEATURES High gain High output voltage Low noise Gold metallization ensures excellent reliability Low

More information

DATA SHEET. BST76A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Jun 20

DATA SHEET. BST76A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Jun 20 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 20 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D088. MMBT3904 NPN switching transistor. Product specification 2000 Apr 11

DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D088. MMBT3904 NPN switching transistor. Product specification 2000 Apr 11 DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 2000 Apr 11 FEATURES PINNING Low current (max. 100 ma) Low voltage (max. 40 V). APPLICATIONS Telephony and professional communication equipment. PIN

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BST72A N-channel vertical D-MOS transistor. Product specification File under Discrete Semiconductors, SC13b

DISCRETE SEMICONDUCTORS DATA SHEET. BST72A N-channel vertical D-MOS transistor. Product specification File under Discrete Semiconductors, SC13b DISCRETE SEMICONDUCTORS DATA SHEET N-channel vertical D-MOS transistor File under Discrete Semiconductors, SC3b April 995 DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant

More information

DATA SHEET. BSP225 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS

DATA SHEET. BSP225 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET P-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 FEATURES Low R DS(on) Direct interface to C-MOS, TTL, etc. High-speed switching

More information

BSH Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

BSH Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor M3D88 Rev. 25 August 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level

More information

DATA SHEET. BCY78; BCY79 PNP switching transistors DISCRETE SEMICONDUCTORS Jun 18

DATA SHEET. BCY78; BCY79 PNP switching transistors DISCRETE SEMICONDUCTORS Jun 18 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 18 FEATURES Low current (max. 100 ma) Low voltage (max. 45 V). APPLICATIONS

More information

DATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25

DATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input

More information

DATA SHEET. BUT18F; BUT18AF Silicon diffused power transistors DISCRETE SEMICONDUCTORS Jun 11

DATA SHEET. BUT18F; BUT18AF Silicon diffused power transistors DISCRETE SEMICONDUCTORS Jun 11 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1997 Aug 13 1999 Jun 11 DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated

More information

DATA SHEET. BUX84; BUX85 Silicon diffused power transistors DISCRETE SEMICONDUCTORS Aug 13

DATA SHEET. BUX84; BUX85 Silicon diffused power transistors DISCRETE SEMICONDUCTORS Aug 13 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of February 996 File under Discrete Semiconductors, SC06 997 Aug 3 DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB

More information

DATA SHEET. PUMD3 NPN/PNP resistor-equipped transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 13.

DATA SHEET. PUMD3 NPN/PNP resistor-equipped transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 13. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 NPN/PNP resistor-equipped transistors Supersedes data of 1999 Apr 13 2001 Feb 16 FEATURES Transistors with different polarity and built-in bias

More information

DATA SHEET. BLF2043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17.

DATA SHEET. BLF2043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 Supersedes data of 2000 Feb 17 2000 Feb 23 FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19.

DISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19. DISCRETE SEMICONDUCTORS DATA SHEET M3D07 Supersedes data of 996 Mar 9 200 Sep 05 FEATURES Low forward voltage Guard ring protected Small plastic SMD package. APPLICATIONS Ultra high-speed switching Voltage

More information

DATA SHEET. BLF1043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17.

DATA SHEET. BLF1043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 Supersedes data of 2000 Feb 17 2000 Feb 23 FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DATA SHEET. BUW11F; BUW11AF Silicon diffused power transistors DISCRETE SEMICONDUCTORS Aug 14

DATA SHEET. BUW11F; BUW11AF Silicon diffused power transistors DISCRETE SEMICONDUCTORS Aug 14 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a

More information

DATA SHEET. BYD17 series General purpose controlled avalanche rectifiers DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1996 Sep 26

DATA SHEET. BYD17 series General purpose controlled avalanche rectifiers DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1996 Sep 26 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D2 Supersedes data of 996 Sep 26 999 Nov FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed

More information

DATA SHEET. UZZ9000 Sensor Conditioning Electronics DISCRETE SEMICONDUCTORS May 18

DATA SHEET. UZZ9000 Sensor Conditioning Electronics DISCRETE SEMICONDUCTORS May 18 查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 Dec 03 File under Discrete Semiconductors, SC17 1998 May 18 FEATURES One chip angle sensor output signal conditioning

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2001 Jun 11 2004 Jan 13 FETURES High current (max. 1 ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery

More information

DATA SHEET. PBSS4350D 50 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jan Jul 13.

DATA SHEET. PBSS4350D 50 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jan Jul 13. DISCRETE SEMICONDUCTORS DATA SHEET age M3D32 PBSS435D 5 V low V CEsat NPN transistor Supersedes data of 21 Jan 26 21 Jul 13 FEATURES Low collector-emitter saturation voltage High current capability Improved

More information

DATA SHEET. BSS87 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 June 23

DATA SHEET. BSS87 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 June 23 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1997 June 23 2001 May 18 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon.

More information

DATA SHEET. BST84 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS

DATA SHEET. BST84 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS 查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 DISCRETE SEMICONDUCTORS DATA SHEET N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 DESCRIPTION N-channel vertical in SOT89 envelope

More information

DATA SHEET. BYD37 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS

DATA SHEET. BYD37 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 Supersedes data of 1996 Jun 5 1999 Nov 16 FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed

More information

DATA SHEET. BF909WR N-channel dual-gate MOS-FET DISCRETE SEMICONDUCTORS Sep 05

DATA SHEET. BF909WR N-channel dual-gate MOS-FET DISCRETE SEMICONDUCTORS Sep 05 DISCRETE SEMICONDUCTORS DATA SHEET BF99WR Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC7 1997 Sep 5 BF99WR FEATURES Specially designed for use at 5 supply voltage Short channel

More information

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MD088 Supersedes data of October 199 1996 Mar 19 FEATURES Low forward voltage Guard ring protected Very small SMD package. APPLICATIONS Ultra high-speed

More information

PHT4NQ10LT. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

PHT4NQ10LT. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor MD87 Rev. September Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT.. Features TrenchMOS technology Fast switching Low on-state resistance

More information

DATA SHEET. 74AHC08; 74AHCT08 Quad 2-input AND gate INTEGRATED CIRCUITS

DATA SHEET. 74AHC08; 74AHCT08 Quad 2-input AND gate INTEGRATED CIRCUITS INTEGRTED CIRCUITS DT SHEET Supersedes data of 1998 Dec 18 File under Integrated Circuits, IC06 1999 Sep 24 FETURES ESD protection: HBM EI/JESD22-114- exceeds 2000 V MM EI/JESD22-115- exceeds 200 V CDM

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DISCRETE SEMICONDUCTORS DATA SHEET. MX1011B700Y NPN microwave power transistor Feb 18. Product specification Supersedes data of November 1994

DISCRETE SEMICONDUCTORS DATA SHEET. MX1011B700Y NPN microwave power transistor Feb 18. Product specification Supersedes data of November 1994 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 1994 1997 Feb 18 FEATURES Suitable for short and medium pulse applications up to 100 µs/10% Internal input and output prematching networks

More information

DATA SHEET. PDTA114E series PNP resistor-equipped transistors; R1 = 10 kω, R2 = 10 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PDTA114E series PNP resistor-equipped transistors; R1 = 10 kω, R2 = 10 kω DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET PDT114E series Supersedes data of 1999 May 21 200 pr 10 PDT114E series FETURES uilt-in bias resistors Simplified circuit design Reduction of component count Reduced pick

More information

DATA SHEET. BGA2031/1 MMIC variable gain amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Mar 02.

DATA SHEET. BGA2031/1 MMIC variable gain amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Mar 02. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA231/1 Supersedes data of 2 Mar 2 21 Feb 5 BGA231/1 FEATURES High gain Excellent adjacent channel power rejection Small SMD package Low dissipation.

More information

DATA SHEET. 74HC1G125; 74HCT1G125 Bus buffer/line driver; 3-state INTEGRATED CIRCUITS Nov 10

DATA SHEET. 74HC1G125; 74HCT1G125 Bus buffer/line driver; 3-state INTEGRATED CIRCUITS Nov 10 INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC06 1998 Nov 10 FEATURES Wide operating voltage: 2.0 to 6.0 V Symmetrical output impedance High noise immunity Low power dissipation Balanced

More information

DATA SHEET. BYG90-40 series Schottky barrier rectifier diodes DISCRETE SEMICONDUCTORS May 06

DATA SHEET. BYG90-40 series Schottky barrier rectifier diodes DISCRETE SEMICONDUCTORS May 06 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 File under Discrete Semiconductors, SC01 1996 May 06 FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DT SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN transistor in a plastic SOT23 package. PPLICTIONS wide range of RF applications such as: Mixers

More information

BFG403W NPN 17 GHz wideband transistor

BFG403W NPN 17 GHz wideband transistor DISCRETE SEMICONDUCTORS BFG43W Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 BFG43W FEATURES Low current Very high power gain Low noise figure High transition frequency

More information

DATA SHEET. BSS110 P-channel enhancement mode vertical D-MOS transistor. Philips Semiconductors DISCRETE SEMICONDUCTORS.

DATA SHEET. BSS110 P-channel enhancement mode vertical D-MOS transistor. Philips Semiconductors DISCRETE SEMICONDUCTORS. DISCREE SEMICONDUCORS DAA SHEE BSS File under Discrete Semiconductors, SC7 995 Apr 7 Philips Semiconductors BSS FEAURES Low threshold voltage Direct interface to C-MOS, L, etc. High speed switching No

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS (TM) transistor

DISCRETE SEMICONDUCTORS DATA SHEET. PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS (TM) transistor DISCRETE SEMICONDUCTORS DATA SHEET N-channel logic level TrenchMOS (TM) transistor October 1999 FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLF544 UHF power MOS transistor Jan 21. Product specification Supersedes data of October 1992

DISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLF544 UHF power MOS transistor Jan 21. Product specification Supersedes data of October 1992 DISCRETE SEMICONDUCTORS DATA SHEET M3D76 Supersedes data of October 1992 1998 Jan 21 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability

More information

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27. DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification

More information

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14. DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities

More information

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability

More information

DATA SHEET. PMBFJ174 to 177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. PMBFJ174 to 177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors File under Discrete Semiconductors, SC07 pril 1995 DESCRIPTION Silicon symmetrical p-channel junction FETs in

More information

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and

More information

PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab

PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR3-35PT 4PT 45PT

More information

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current

More information

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum

More information

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13. DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability

More information

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced

More information

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information