DATA SHEET. BLF1043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17.
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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 Supersedes data of 2000 Feb Feb 23
2 FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance Designed for broadband operation (HF to 1 GHz). PINNING - SOT538A PIN 1 drain 2 gate 3 source DESCRIPTION APPLICATIONS Communication transmitter applications in the UHF frequency range. 1 3 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. 2 Top view MBK905 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at T h =25 C in a common source test circuit. MODE OF OPERATION f (MHz) V DS (V) P L (W) G p (db) η D (%) d im (dbc) CW, class-ab (2-tone) f 1 = 960; f 2 = (PEP) >16 >35 30 CW, class-ab (1-tone) >16 >45 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B Feb 23 2
3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage 75 V V GS gate-source voltage ±15 V I D drain current (DC) 2.2 A P tot total power dissipation T mb 25 C tbf W T stg storage temperature C T j junction temperature 200 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base T mb =25 C; note K/W R th mb-h thermal resistance from mounting base to heatsink 0.4 K/W Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = 0; I D = 0.2 ma 75 V V GSth gate-source threshold voltage V DS = 10 V; I D =20mA 4 5 V I DSS drain-source leakage current V GS = 0; V DS =26V 0.15 µa I DSX on-state drain current V GS =V GSth +9V; V DS =10V 3 A I GSS gate leakage current V GS = ±15 V; V DS =0 1 µa g fs forward transconductance V DS = 10 V; I D = 0.75 A 0.5 S R DSon drain-source on-state resistance V GS = 10 V; I D = 0.75 A 1.2 Ω C is input capacitance V GS = 0; V DS = 26 V; f = 1 MHz 11 pf C os output capacitance V GS = 0; V DS = 26 V; f = 1 MHz 9 pf C rs feedback capacitance V GS = 0; V DS = 26 V; f = 1 MHz 0.6 pf 2000 Feb 23 3
4 APPLICATION INFORMATION RF performance in a common source class-ab circuit. T h =25 C; R th mb-h = 0.4 K/W unless otherwise specified. MODE OF OPERATION Ruggedness in class-ab operation f (MHz) V DS (V) I DQ (ma) The is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V DS = 26 V; f = 960 MHz at rated load power. P L (W) G p (db) η D (%) d im (dbc) CW, class-ab (2-tone) f 1 = 960; f 2 = (PEP) >16 >35 30 CW, class-ab (1-tone) >16 >45 30 handbook, G halfpage p (db) 25 MGS η D (%) 50 η D G p f (MHz) Class-AB operation; V DS = 26 V; I DQ = 80mA; P L = 10 W (PEP). Fig.2 Power gain and efficiency as functions of frequency, typical values Feb 23 4
5 4 Z i (Ω) 0 r i MGS Z L (Ω) MGS R L 4 x i 5 X L f (MHz) f (MHz) V DS = 26 V; I DQ = 80 ma; P L = 10 W (PEP); T h 25 C. Impedance measured at reference planes (see Fig.5). V DS = 26 V; I DQ = 80 ma; P L = 10 W (PEP); T h 25 C. Impedance measured at reference planes (see Fig.5). Fig.3 Input impedance as a function of frequency (series components); typical values. Fig.4 Load impedance as a function of frequency (series components); typical values. drain gate Z L Z IN MGS998 reference planes MGT002 Fig.5 Measuring reference planes SOT538A. Fig.6 Definition of transistor impedance Feb 23 5
6 PACKAGE OUTLINE Ceramic surface mounted package; 2 leads D SOT538A Package under development Philips Semiconductors reserves the right to make changes without notice. A D 1 D 2 3 B c 1 L H E 2 E 1 E 2 b w 1 M B M α Q mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 D 2 E E 1 E 2 H L Q w 1 α mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT538A Feb 23 6
7 DEFINITIONS Data Sheet Status This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Feb 23 7
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