Efficient light emission from LEDs, OLEDs, and nanolasers via surface-plasmon resonance
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1 (Fifth Lecture) Techno Forum on Micro-optics and Nano-optics Technologies Efficient light emission from LEDs, OLEDs, and nanolasers via surface-plasmon resonance 송석호, 한양대학교물리학과, silver grating Key notes 1. How does the surface plamon resonance enhance the internal quantum efficiency of light source? 2. Understand the Fermi-Golden rule and Purcell enhancement factor in spontaneous emission 3. What are the practical difficulties in realizing SP-enhanced LEDs? 4. Summary of the five lectures
2 Remind! The next chip-scale technology λ limit e limit Three light-design regimes WAVE DESIGN ( d ~ λ ) Light extraction LED RAY DESIGN ( d > λ ) Internal QE PHOTON DESIGN ( d < λ )
3 Power conversion efficiency of III-Nitride LEDs Example: λ=530nm, I=350mA PCE ~ 12%
4 External efficiency of LEDs η η external extraction R nr R = ηextrac tion R+ Rnr :extraction efficiency :nonradiative-recombination rate R:spontaneous-emission rate η extraction ( n f / n g ) = = 4% θ s, p 0 2 c [ 1 R( θ )] θ sin dθ 2 for GaN(2.5) - air(1.0) i(10)
5 Wave Design for efficient extraction of the guided light -. Geometric optics η external R = ηextraction R + Rnr -. Random scattering in surface textured structure APL 63, 2174 (1993)
6 Photon Design for increasing the emission rate η external R = ηextraction R + Rnr What determines spontaneous emission rate of radiating source? E i E f Energy of EM field ω ( n + 1/2) Number of photon Vacuum fluctuation ti (Stimulated emission) (Spontaneous emission) electron SE Rate : Fermi s Golden Rule R = ( ) τω ( ) = 2 f p ε E i ρ ω 0 Photon DOS (density of states) Dipole moment Electric field strength of radiation source of half photon (vacuum fluctuation) Microoptics Lab Hanyang University emd Lab. 6
7 Photon Design for increasing the emission rate 1 1 R = = f p E i τω ( ) 2ε 0 2 ρ( ω) E, ρ increase η external R = ηextraction R + Rnr Ag p-gan Quantum Well n-gan Atoms in microcavity High Q Narrow Δν F p ~ 1 5 Low volume filling factor Photonic crystal cavity Moderate Q Wider Δν F p (Quantum wells) ~ 3 F p (Quantum dots) ~ Off-resonant and complicated fabrication Surface plasmon coupling Low Q Narrow Δν F p ~ lossy and off-resonant photonic/website/surf-plasmon-ohps-f.ppt Department of Physics, University of North Texas, Denton, Texas 76203
8 Photonic-crystal approach 1 1 R = = f p E i τ ( ω ) 2ε 0 2 ρ( ω) E, ρ increase η external η R = extraction R + R nr Baba LumiLed Limited by surface recombination Good scheme!!! 100 um device size achievable. Several layer of PC for extraction. Good internal quantum efficiency i Needed (>90%). Multiple pass limits device size (~10um). Small volume needed. Not so good for lighting. Surface recombination limited Surface recombination limited. Noda
9 Photonic-crystal assisted LEDs 1 1 R = = f p E i τω ( ) 2 ε 0 2 ρ( ω) Very small increase in E, ρ! Look like a result of wave design rather than photon design!
10 Surface-plasmon approach η = int R p R p + R nr η ' int = R p R p + R sp + R + R sp nr Surface Plasmons
11 The SP approach was started for organic LEDs ITO glass (anode) Organic molecules Cathode & Mirror SPP quenching (~40%) Conventional Structures: Strongly coupled to SPPs Main issue: SPP Radiation coupling Metallic mirror Metallic thin film SPP2 SPP1 SPP band gap ( Λ ~ π / ) k SPP Direct coupling ( Λ > π / k SPP ) SPP cross-coupling ( Λ = π /[ k k ]) SPP1 SPP2
12 Effect of SPP band gap on PL Angle resolved PL of dye molecule (DCM) 1 st and 2 nd order diffraction of SPPs Tracing 1 st order peaks shows SPP band gap.
13 Modification of Spontaneous Emission Rate of Eu 3+ Main emission of Eu 3+ (614nm) SPP quenching τ ( spacer thickness ) TRPL at 614nm
14 Self-driven dipole (CPS) modeling d p Metal interface 2 2 d d 2 e p + b0 p + ω0 p = E 2 dt dt m ω p = p e, E = E e i( ib/ 2) t i( ω ib/ 2) t 0 r 0 2 unknowns and 2 equations r 2 e b / b0 = 1 + Im{ E0 } mω p b b bb0 e Δ ω 8ω 4ω 2mω p Re{ E0 } 14
15 Dipole Decay Calculation Test : Metal Mirror Cavity pated pow wer dissi perpendicular dipole parallel dipole kx / k1 J. A. E. Wasey and W. L. Barnes, J. Mod. Opt. 47, ,
16 CPS Model Calculation for Spontaneous Emission Rates of an OLED Emission Spectrum No guided mode TM 0 TM 0 +TE 0 TM 0 +TE 0 +TM 1 70nm 100nm 200nm 390nm ra adiation rat te (R 0 ) total emission rate air emission emission to substrate guided modes emission to active layer guided modes active layer thickness (nm) dipole ( h = h + h ) cover (medium c) h c active material h (medium a) s a s c substrate (medium s)
17 Comparison with an experiment iency (% %) ratio (%) PL Effic Film Thickness (nm) power P air +P sub +1.0P guided P air +P sub +0.4P guided P air +P sub +0.8P guided P air +P sub +0.2P guided P air +P sub +0.6P guided P air +P sub +0.0P guided active layer thickness (μm) (measured) (calculated) 17
18 SPP Enhanced Spontaneous Emission of Eu 3+ Ion SE rate 90% SPP coupling 25 times SE rate Dipole-SPP coupling fraction Maximum internal efficiency
19 Role of Preferred Orientation of the Dipole Source Adv. Mater Angle integrated EL
20 Enhanced PL by Coupled SPP
21 Cross-Coupled vs Coupled SPP (1) (2) (3) (4)
22 SPP Enhanced PL of InGaAs QW Most cited paper Un-processed (a) Half-processed (b) Fully-processed (c) 480nm period (2 nd order coupling) (d) 250nm period (1 st order coupling) (160nm gap)
23 1 st Result of SPP enhanced PL from InGaN QW Nature Materials, VOL 3, p , R = = f p E i ρ ( ω ) τ ( ω ) 2ε 0 E, ρ increase η external R = η extraction R + Rnr Nature Materials, VOL 3, p , 2004
24 1 st Result of SPP enhanced PL from InGaN QW Nature Materials, VOL 3, p , x100nm 2 133nm wide, 400nm period grating (no enhancement for 200nm wide, 600nm period grating) x2 x28 x Average internal quantum efficiency e cy estimation
25 TRPL of SPP enhanced InGaN QW emission
26 How does the surface-plasmon resonance contribute to emission rate? R = ( ) τω ( ) = 2 f p i ρ ω ε E 0 Field enhancement near the source layer High DOS due to decrease in group velocity emd Lab. Microoptics Lab Hanyang University 26
27 R = ( ) = f p i ρ ω τω ( ) 2 ε E 0 Field enhancement near the source layer High DOS due to decrease in group velocity Requirements for enhancing SE rate B -. slow group velocity -. tight confinement of mode -. low ohmic loss A -. large field enhancement fast group velocity, low loss slow group velocity, high loss A B Q.W. Q.W.
28 Purcell factor defining enhancement of the spontaneous emission F p R + R R = 1+ R R original additional additional original original For a cavity mode: F p Rcav 3 Q( λc / n) = = 2 R 4π V free 3 mode_ volume For a SP mode : F p R SP 1 λ k SP / k = 1+ = 1+ R 2 π L υ / c 0 SP 0 υ SP ( ( ωε ) dz ( z) dω E SP =, L = ω 2 dk E at dipole 2 We need a slow and confined mode!
29 Factors influencing Purcell Enhancement F p (ω) GaN ~ ζ Ag ~ z Single Quantum Well GaN Variation with Ag thickness Variation with GaN thickness
30 Purcell enhancement factor: A numerical factor (F-1) estimation cover Cover = 1.0 Cover = 1.5 Cover = 2.0 Need a very thin p-gan layer!!
31 Improvement I-L curve F p 2.68at10 K = 1.75at 300 K No improvement I-V curve the enhanced F p can be attributed to an increase in the spontaneous emission rate due to SP-QW coupling.
32 Why SP-LED hasn t been successful yet? Practical Barriers (especially for InGaN/GaN devices) Thin p-gan leads to abrupt occurrence of leakage current under a certain thickness SP propagation length in blue wavelength along the Ag/GaN interface is extremely short Nanopatterning becomes a huge burden at short wavelength Damageless p GaN patterning has been impossible Damageless p-gan patterning has been impossible SQW devices are prone to leakage current due to carrier overflow Silver is a nasty material with poor adhesion to GaN and tends to agglomerate at an elevated temperature
33 SP propagation length Nanopatterning of SPs [nm m] Propagat tion Length 1 PL SPs = 2 k k 3 2 ω ε mε d ε m = c ε m ε + d 2( ε m 2 ) Surface Plasmon on the Ag/GaN Interface Wavelength of Photon [nm] Green LEDs might be possible. Freq quency (2π πc/μm) Λ = λsp, 2λsp, 3λsp, 530nm λsp~140 nm 460nm λsp~70 nm SP-dispersion dspeso on Ag/GaN In-plane Wavevector (2π /μm) 2 nd order gratings (Λ~280nm) might be readily fabricated by Holo litho at Green.
34 Schematic structure Photon Sapphire n-gan Exciton generation Radiation InGaN MQW p-gan Metal (Ag-based) e-h Surface plasmon excitation Silicon submount Λ D h
35 High output directionality by grating with non-even fill-factor 1 st order grating, fill factor=0.1 1 st order grating, fill factor=0.5 2 nd order grating, fill factor=0.1 2 nd order grating, fill factor=0.7
36 Extraction efficiency of a metal grating Data sampling at λ = 530 nm / w = 5 nm η int 1+ ηext γ sp = 1 + γ γ nr sp 1+ ext sp η γ FDTD ηint = 1+ γ sp η ext 1 1 η ext η = FDTD int (1 + γ ) 1 γ sp sp γ nr η η γ int ext sp : nonradiative re-comb. rate : internal quantum eff. : extraction efficiency of metal grating : re-comb. rate to surface plasmon Max ~ 80% (at 140 nm / 40 nm)
37 단일원기둥구조계산 Two-dimensional silver-grating (2 nd order) Λ = 250nm Grating depth = 50nm Gap to QW = 30 nm Normaliz zed LT / In nternal QE 1.2 Normalized LifeTime Internal Quantum Efficiency Upward Emitted Power Upward em mitted pow wer (a.u.) Diameter (nm) 169 nm
38 Optimum gap distance between metal and QW Upward enhanc cement λ = 530 nm d = 20 nm Distance [nm] coupling to lossy surface wave coupling to surface plasmons 6nm is a theoretical limit given by self-driven dipole (CPS) modeling [W. L. Barens and P. T. Worthing, Optics Communications 162, 16 (1999)]
39 Grating on p-gan Substrate mount Aperture Little damage to p-gan Enlarged surface area for low contact resistance Rotation o stage Linear stage X Z Y θ Mirro r L-Shape mount
40 EL Measurement Power(a arb.) Higher output power up to 70 % ref 250A_3 250B_2 250C_2 270A_4 270B_2 270C_3 290A_ B_ Current(A)
41 Sample images
42 An Optimistic Estimation for SP-enhanced LEDs At green (530 nm) with a 1 st order grating MQW 5nm 10 nm grating de epth FDTD calculation l 20 nm 2.3 times more Photons generated 60 nm 140 nm 100 nm grating period 180 nm Good directionality Surface plasmon ed Ph hotons escap % 34.1% within 20 o after escape 1/(2n 2 ) = 8 % Wavelength (nm) (Bare-chip LED with 8 % extraction) (82 % / 8 %) x 2.3 ~ 24 times Brighter ( Optimized LED with 50 % extraction) (82 % / 50 %) x 2.3 ~ 4 times Brighter
43 Nanocavity lasers
44 Nanocavity lasers
45 Key notes Final comments 1. How does the surface plamon resonance enhance the internal quantum efficiency of light source? 2. Understand the Fermi-Golden rule and Purcell enhancement factor in spontaneous emission 3. What are the practical difficulties in realizing SP-enhanced LEDs? 4. Summary of the five lectures External Efficiencies Conventional LED SP LED η ' = R p η = Ep R nr + R p ER + E R p p SP SP R + R + R nr p SP An Optimistic Estimation for SP-enhanced LEDs At green (530 nm) with a 1 st order grating MQW 5 nm 10 nm grating depth FDTD calculation 20 nm 2.3 times more Photons generation 60 nm 140 nm 100 nm grating period 180 nm
46 Final comments Summary of the five lectures (06/23) Introduction: Micro- and nano-optics based on diffraction effect for next generation technologies (06/30) Guided-mode resonance (GMR) effect for filtering devices in LCD display panels (07/07) Surface-plasmons: A basic (07/14) Surface-plasmon waveguides for biosensor applications (07/21) Efficient light emission from LED, OLED, and nanolasers by surface-plasmon resonance R 0 T 0 GMR grating Micros D cor e metal strip SPP mode cladding core metal slab cladding
47 Final comments Summary of the five lectures Now, let s get back to Macros with Nanos and Micros.
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