arxiv: v1 [cond-mat.mes-hall] 16 Nov 2011

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1 EXPLORING THE PARAMETER SPACE OF DISC SHAPED SILVER NANOPARTICLES FOR THIN FILM SILICON PHOTOVOLTAICS arxiv:.379v [cond-mat.mes-hall] 6 Nov 2 BRUNO FIGEYS, OUNSI EL DAIF IMEC VZW, LEUVEN, BELGIUM Abstract. We numerically simulate, using finite-difference time-domain, optical properties of silver nano discs deposited on front surface of silicon solar cells. We explore effect of each of parameters of such a system, in order to draw some general design rules for subsequent fabrication of such structures.. Introduction Placed on interface of two media with a high and a low refractive index, metallic nanoparticles scatter a higher fraction of light into high refractive index medium. In addition, scattered light has a broad distribution of angles, increasing lights path length through this medium. These are two effects that make silver nanoparticles promising for solar cells. In particular increase in path length enables an increase in absorption when active region of solar cell is small. However introduction of metal particles will also introduce additional ohmic losses. The overall transmission of solar incident light into high refractive index material, may refore be smaller than in case of an optimised antireflective coating 2. It has been reported as well that for particles placed at sun-facing side of cell, inside high index material incoming light interferes with light scattered by nanoparticles. For light energies above plasmon resonance, where electrons show a phase lag compared to exciting light, this means that destructive (Fano) interferences occur, leading to an absorption suppression. Consequently, as solar power is maximum in green part of spectrum, plasmon resonance should be designed at higher energies, corresponding to blue wavelengths. Both fraction of scattered light into solar cell as well as increase in path length can be maximised by positioning particle as close as possible to high refractive index material. Because of this we consider in this work a silica (SiO 2 ) optical spacer of 2nm, and to ensure transmission rivals that of an antireflective coating, a cladding of nm of SiO 2 on top of particles is considered. The ideal density of particles depends on inter-particle coupling. For too small inter-particle distances, large inter-particle coupling occurs, leading to a higher reflectivity and losses. For simulations periodicity is set to 3nm, except when effect of this inter-particle This work is adapted from a Masters sis done at Katholieke Universiteit Leuven[3] 2 a single layer of 8 of silicon nitride is often used in silicon photovoltaics

2 2 BRUNO FIGEYS, OUNSI EL DAIF IMEC VZW, LEUVEN, BELGIUM distance is specifically studied. The particle size also plays a crucial role: particle resonance will red shift as diameter of particle increases. We performed numerical simulations using Lumerical[4], a finite-difference time-domain (FDTD) simulation software package. A plane wave source was simulated at air side of an air/silicon interface with a SiO 2 interface layer, including a silver disc. The top and bottom boundary condition were perfectly matched layers. Only a quarter particle was simulated, vertical boundary conditions were refore chosen symmetric for boundaries parallel to polarization of incoming wave and anti-symmetric for boundaries perpendicular to polarization. This way a particle array is simulated and simulation time reduced. Using transmitted power above and below particle array and 4nm into silicon, absorbed power in particle array, absorbed power in silicon and total transmitted and reflected power can be calculated. The absorbed power in silicon is a measurement of scattering in different angles. Indeed, when path length is increased it will cause an increase in absorption in this thin region. The dielectric functions for Ag as well as for Si were based on experimental values found in Palik s reference book[5]. This article describes trends of dipolar surface plasmon resonance observed for changing parameters, such as particle diameter or spacer thickness. We considered as benchmark structures two different structures: a bare silicon layer without anything at surface, and a silicon layer with 8nm of silicon nitride (Si 3 N 4 ) as an antireflection coating, which is usually used in solar cells.

3 This was a short overview of most important and determining options that have to be chosen. It is thus clear that simulations need to be set up with care in order to save time. 2.2 Simulation structure EXPLORING THE PARAMETER SPACE OF DISC SHAPED SILVER NANOPARTICLES FOR THIN FILM SILICON PHOTOVOLTAIC Figure 2.3a shows structure that is used in simulations. It consists of a layer of silicon (red), with on top2. ofsimulation it a layer silicon structure oxide (dark grey). In this layer of silicon oxide re is a silver disk (light grey). The particle is at a certain distance Figure from shows silicon layer, structure thin that layer is between used in silicon simulations. and It particle consists is what of a layer will of silicon be (brown), called with spacer. on top The of rest it a of layer silicon of silicon oxide oxide is called (dark grey). capping. In this This layer is a of very silicon oxidesimple re structure, is a silver but disc it(light has agrey). lot of The parameters particlethat is atcan a certain be changed. distance In fromfollowing silicon layer, alineas thin a few layer words between will be saidsilicon aboutand each of this particle substructures. is spacer, whereas layer above particle is capping. (b) (a) Figure 2.3: The figure shows a simplified schematic solar cell with nanoparticles embedded Figurein. ansimplified oxide. The drawing black box of arepresents solar cell with part nanoparticles that is simulated, embedded this is onlyinone an oxide. particle. (b) The black box represents part that is simulated. The main elements used in present work are following: Silicon substrate: The silicon layer is active layer of solar cell, where light absorption should be enhanced. The electrical properties of solar cell are not Silicon substrate The silicon layer is layer in pn-diode would be and thus simulated with Lumerical, refore only number of absorbed photons is calculated. The silicon layer considered has been taken thin ( 3 4nm) to reduce where light has to be absorbed. The electrical properties of solar cell are not simulated with Lumerical, refore only number of absorbed photons could be calculation time. calculated, but not IV-curve for example. This layer has been taken really thin, most Spacer: often The 3nm, spacer to reduce between simulation silicon and time. Therefore particle is it necessary is not really for usefull several to purposes. speak about absorption of light, because it would n only be for 3nm. () In order to prevent material contamination in silicon, as a barrier between silver and silicon of metal into silicon. 24 (2) The optical spacer allows blue-shifting surface plasmon resonance (SPR) wavelength. Previous works[] indicate that it is better to stick to silicon oxide for particles on frontside. Particle: The particle, a disc, has two parameters that can be tuned: its radius and thickness. Silver has been used for its low ohmic losses as well as for its smaller detrimental effect on silicon properties, in case of contamination (compared e.g. to (c)

4 4 BRUNO FIGEYS, OUNSI EL DAIF IMEC VZW, LEUVEN, BELGIUM copper or gold). The reason for this comes from mid bandgap energy levels copper and gold impurities generate in silicon band structure, as can be seen on figure 2. These mid bandgap energy levels degrade carrier relaxation time strongly due to an increased Shockley-Read-Hall recombination. Each recombination of an electron-hole pair represents a photon that has been absorbed in silicon and that has not been converted into current. It thus reduces IQE. Figure 2. Representation of energy levels of impurities in silicon bandgap. Capping: The capping which is top part of dielectric has also been chosen to be silicon oxide. This layer acts as an antireflection coating, complimentary to platonic effect for off-resonance wavelengths. Experimentally it can also improves stability of nanoparticles by preventing ir oxidation in air. 3. Simulation setup The simulation structure was made as small as possible, as simulation time can increase rapidly due to small mesh size necessary around silver nanodiscs: in order to account for plasmon resonance, which is mainly characterized by an enhancement electromagnetic field around particle. It has refore been chosen to do simulations only for one particle instead of an array. For faster simulations it has been chosen to use periodic structures on sidewalls, using symmetric and anti-symmetric boundary conditions, as described higher in introductory part.

5 EXPLORING THE PARAMETER SPACE OF DISC SHAPED SILVER NANOPARTICLES FOR THIN FILM SILICON PHOTOVOLTAIC 4. Diameter of nanodisc As can be seen in figures 3 SPR red-shifts with an increasing disc diameter. This implies that Fano resonance characteristic also red-shifts, as can be seen in figure 4. The coupling of light into silicon shows a minimum around 625nm and 925nm for nm and 2nm diameter respectively. Considering solar spectrum this is a detrimental spectrum as an important amount of light would be reflected at a wavelength where solar spectrum is maximum. The bottom figure shows absorption of light in particle by ohmic losses. This is around % for nm diameter particles but increase up to 2% for 5nm diameters. D=5nm D=nm D=2nm 2 Ex 2 5 Diameter in nm 5 Figure 2.9: Influence of particle diameter on SPR Figure 3. Influence of particle diameter on SPR 3

6 6 BRUNO FIGEYS, OUNSI EL DAIF IMEC VZW, LEUVEN, BELGIUM D=5nm D=nm D=2nm 2 Ex 2 5 Diameter in nm Figure 2.9: Influence of particle diameter on SPR Figure 4. Influence of particle diameter on reflectivity, coupling into silicon and absorption in particle Thickness of nanodisc Figure 5 shows that for thicker particles, i.e. towards cylinders, SPR blue-shifts. The same figure also shows that a certain saturation is reached for a thickness of 55nm. The same trend is naturally to be seen in reflectivity graph in figure 6. 3

7 EXPLORING THE PARAMETER SPACE 2.5. OFExploring DISC SHAPED SILVER parameter NANOPARTICLES space of disk FOR shaped THIN FILM particles SILICON PHOTOVOLTAIC E 2 x t part =5nm t part =35nm t part =55nm Particle thickness in nm Figure 2.: Influence of particle thickness on SPR Figure 5. Influence of particle thickness on SPR. 6. Thickness of spacer Thickness of spacer Figures 7 and 8 show that for a thinner spacer resonance red-shifts. This is same trend Figures as for an2.3 increasing and 2.4 refractive show that indexfor ofa thinner medium. spacer This suggests resonance that red-shifts. by bringingthis is dipolar same oscillator trendcloser as fortoan increasing surface refractive average refractive index of index medium. is increased, Thisleading suggest that to a red-shift. by bringing dipolar oscillator closer to surface average refractive index Theis resonance increasedseems which to would go towards leadato limit a red-shift. for large spacer Although thicknesses. this is This verylimit unscientific is it is SPR for a rule particle of thumb in an which oxideseems environment to workwithout quite well. influence An or of example, silicon indicated by making with particle blue thinner, line. A second center observation of particle is that is closer Fano-modulation to silicon, around average curve dielectric without environment particle is stronger increasesfor and a larger resonance spacer. This red-shifts. is a confirmation of proposed increase in scattering cross section due to a larger effective electric field furr away from substrate as has been proposed in paper of K. Catchpole and A. Polman [2]. The resonance seems to go towards a limit for large spacer thicknesses. This limit is most probably 7. SPR Periodicity for particle of particles in an oxide environment without influence of silicon indicated with blue line. A second observation is that Large periodicities don t influence resonance wavelength, whereas for small periodicities, high densities, it red-shifts. This is visible in figure 9, for P = 3 to 5nm all Fano-modulation around curve without particle is stronger for a larger spacer. This is a confirmation of proposed increase in scattering cross section due to a curves cross at same point around 7nm. For P = 2nm resonance is red-shifted a bit. larger Figuree9 ective shows electric Fanofield resonance furr consisting away from of a successive substrate decrease as hasand been increase proposed in with respect paper to of K. curve Catchpole of structure and A. without Polman any [5]. particle. For smaller periodicities,

8 2. Simulations 8 BRUNO FIGEYS, OUNSI EL DAIF IMEC VZW, LEUVEN, BELGIUM.8 Reflection.6.4 Coupling t part =5nm t part =35nm t part =55nm 8nm nitride without particle Absorption in particle Figure 2.2: Influence of particle thickness on reflectivity, coupling into silicon and Figure 6. Influence of particle thickness on reflectivity, coupling into silicon and absorption in absorption in particle. particle. thus higher density of particles, this Fano-modulation becomes larger and larger. This indicates that for too large periodicities effect of coupling light into silicon decreases because 34 of a too low density of particles. The scattering cross section is thus too small and a lot of light is transmitted without being scattered. The absorption of particle is

9 The thickness of capping has no influence on resonance wavelength. However figure 2.7 shows that thickness of this layer of oxide for se large periodicities is important. The Fano-modulation can be seen as superimposed on ARC e ect of oxide layer. The figures represented are for same simulations as in figures 2.5 and 2.6. EXPLORING THE PARAMETER SPACE OF DISC SHAPED SILVER NANOPARTICLES FOR THIN FILM SILICON PHOTOVOLTAIC spacer=nm spacer=nm spacer=2nm spacer=3nm 5 4 E 2 x 3 2 Spacer in nm Figure 2.3: Influence of spacer thickness on SPR. The vertical line respresent Figure 7. Influence of spacer thickness on SPR. The vertical line represent SPR in SPR silicon in oxide siliconwithout oxide without influence influence of of silicon. silicon. same, but as density of particles increases for smaller P, absorption in particles per surface area of solar cell increases rapidly. 35

10 2. Simulations BRUNO FIGEYS, OUNSI EL DAIF IMEC VZW, LEUVEN, BELGIUM.8 Reflection.6.4 Coupling spacer=nm spacer=nm spacer=2nm spacer=3nm 8nm nitride without particle Figure 2.4: 8. Influence of of spacer thickness on on reflectivity, reflectivity, coupling coupling into silicon. into silicon. 8. Thickness of capping 2.6 Tuning for best coupling The thickness of capping has no influence on resonance wavelength. However figurea good shows light trapping that structure thickness minimizes of this layer totalof reflection oxide for of energy. se This largeshould periodicities is important. be weighted The with Fano-modulation spectral irradiance can be seen of asun superimposed as it is not possible on toarc reduce effect of oxidereflection layer. The for figures whole represented spectrum ofare electromagnetic for samewaves. simulations The spectral as inirradiance figures 9 and. of sun is shown in figure.7 on page 6: it reaches a maximum around 5nm, aim is thus to reflect as little light as possible around this wavelength, without References losing to much of longer wavelength light. Remember that silicon has a bandgap [] F. of J..2eV: Beck, A. light Polman, withand a wavelength K. R. Catchpole. longer Tunable than.light micron trapping will thus for solar not be cells absorbed using localized in surface plasmons. silicon. J. Appl. Phys., 5(), JUN 29. [2] K. R. Catchpole and A. Polman. Design principles for particle plasmon enhanced solar cells. APPLIED PHYSICS Taking into LETTERS, account93(9), previous NOVrequirements 28. SPR should not be too much redshifted. Figeys. Master This can sis. be understood Katholieke Universiteit using figure Leuven, For a diameter of nm and [3] B. [4] Lumerical. 2nm re Lumerical is a dip fdtd insolutions. coupling URL: ofhttp:// light into silicon at 65nm and atlast 9nm checked on respectively. This is fano modulation dip, that occurs due to destructive inter- 36

11 2.6. Tuning for best coupling EXPLORING THE PARAMETER SPACE OF DISC SHAPED SILVER NANOPARTICLES FOR THIN FILM SILICON PHOTOVOLTAIC.8 Reflection.6.4 Coupling P=2nm P=3nm P=4nm P=5nm 8nm nitride without particle Absorption in particle Figure Figure 2.5: 9. Influence Influence of ofperiodicity periodicity of particles of particles on reflectivity, on reflectivity, coupling into coupling into silicon and absorption in particle. Capping is silicon and absorption in particle. Capping is 5nm. 5nm. [5] E. Palik and G. Ghosh. Handbook of optical constants of solids. Number vol. 3 in Academic Press handbook series. Academic Press,

12 2 BRUNO FIGEYS, OUNSI EL DAIF IMEC VZW, LEUVEN, BELGIUM.8 Reflection (a) Reflection P=2nm P=3nm P=4nm P=5nm 8nm nitride without particle (b) Figure Figure 2.6:. Influence Influence of of periodicity periodicity of of particles particles on reflectivity, on reflectivity, coupling into andsilicon absorption and absorption in in particle. particle. Same Same as as figure 92.5 but with but with thickness of coupling into silicon capping thickness of of (a) capping nmof and(b) (a) nm5nm. and(b) 5nm. 38

13 2.6. Tuning for best coupling EXPLORING THE PARAMETER SPACE OF DISC SHAPED SILVER NANOPARTICLES FOR THIN FILM SILICON PHOTOVOLTAIC.8 Coupling (a) Coupling (b) Coupling.6 P=2nm P=3nm.4 P=4nm P=5nm.2 8nm nitride without particle