FFSB1265A. Silicon Carbide Schottky Diode 650 V, 12 A

Transcription

1 FFSB165 Silicon Carbide Schottky Diode 65 V, 1 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175 C valanche Rated 7 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery pplications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits 1, 3 Cathode node D PK 3 (TO 63, 3 LED) CSE 418J MRKING DIGRM $Y&Z&3&K FFSB 165 $Y = On Semiconductor Logo &Z = ssembly Plant Code &3 = Numeric Date code &K = Lot Code FFSB165 = Specific Device Code ORDERING INFORMTION See detailed ordering and shipping information on page of this data sheet. Semiconductor Components Industries, LLC, 17 pril, 18 Rev. 1 1 Publication Order Number: FFSB165/D

2 FFSB165 BSOLUTE MXIMUM RTINGS (T J = 5 C unless otherwise noted) Symbol Parameter Value Unit V RRM Peak Repetitive Reverse Voltage 65 V E S Single Pulse valanche Energy (Note 1) 7 mj I F Continuous Rectified Forward T C < 143 C 1 Continuous Rectified Forward T C < 135 C 14 I F, Max Non-Repetitive Peak Forward Surge Current T C = 5 C, 1 s 94 T C = 15 C, 1 s 89 I F, SM Non Repetitive Forward Surge Current Half Sine Pulse, t p = 8.3 ms 7 I F, RM Repetitive Forward Surge Current Half Sine Pulse, t p = 8.3 ms 43 P tot Power Dissipation T C = 5 C 1 W T C = 15 C 17 W T J, T STG Operating and Storage Temperature Range 55 to +175 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERML CHRCTERISTICS Symbol Parameter Value Unit R θjc Thermal Resistance, Junction to Case, Max 1.5 C/W PCKGE MRKING ND ORDERING INFORMTION Part Number Top Marking Package Packing Method Reel Size Tape Width Shipping FFSB165 FFSB165 D PK Tape and Reel 33 mm 4 mm 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. ELECTRICL CHRCTERISTICS ON WFER (T C = 5 C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit V F Forward Voltage I F = 1, T C = 5 C V I F = 1, T C = 15 C 1.6. I F = 1, T C = 175 C I R Reverse Current V R = 65 V, T C = 5 C V R = 65 V, T C = 15 C 4 V R = 65 V, T C = 175 C 6 Q C Total Capacitive Charge V = 4 V 4 nc C Total Capacitance V R = 1 V, f = 1 khz 665 pf V R = V, f = 1 khz 74 V R = 4 V, f = 1 khz 54 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. E S of 7 mj is based on starting T J = 5 C, L =.5 mh, I S = 17, V = 5 V.

3 FFSB165 TYPICL CHRCTERISTICS (T J = 5 C unless otherwise noted) Forward Current, I F T J = 175 C T J = 15 C T J = 75 C T J = 5 C T J = 55 C Reverse Current, I R TJ = 75 C TJ = 5 C TJ = 175 C TJ = 15 C TJ = 55 C Forward Voltage, V F V Figure 1. Forward Characteristics Figure. Reverse Characteristics 1 1 Peak Forward Current, I F Capacitive Charge, Q C nc D =.1 D =. D =.3 D =.5 D =.7 D = Case Temperature, T C C Figure 3. Current Derating Capacitance, pf Power Dissipation, P TOT W Case Temperature, T C C Figure 4. Power Derating Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3

4 FFSB165 TYPICL CHRCTERISTICS (T J = 5 C unless otherwise noted) 1 Capacitive Energy, E C J Figure 7. Capacitance Stored Energy Normalized Effective Transient Thermal Resistance, r(t) DUTY CYCLE DESCENDING ORDER D =.5.1 SINGLE PULSE NOTES: Z JC(t) = r(t) x R R = 1.5 o JC JC C/W Peak T J = P DM x Z JC(t) + T C Duty Cycle, D = t 1 / t Rectangular Pulse Duration, t sec Figure 8. Junction to Case Transient Thermal Response Curve P DM t 1 t TEST CIRCUIT ND WVEFORMS L =.5 mh R <.1 V DD = 5 V EVL = 1/LI [V R(VL) / (V R(VL) V DD )] Q1 = IGBT (BV CES > DUT V R(VL) ) L R V VL Q1 CURRENT SENSE DUT + V DD V DD I V I L I L t t 1 t t Figure 9. Unclamped Inductive Switching Test Circuit & Waveform 4

5 MECHNICL CSE OUTLINE PCKGE DIMENSIONS D PK 3 (TO 63, 3 LED) CSE 418J ISSUE C DTE 3 OCT 18 SCLE 1:1 E E L1 H e TOP VIEW L D NOTE 3 c X b SIDE VIEW.1 M B M B SETING PLNE c DETIL C M D1 VIEW GUGE PLNE L3 L E1 DETIL C L1 1.1 M B H B M SETING PLNE NOTES: 1. DIMENSIONING ND TOLERNCING PER SME Y14.5M, CONTROLLING DIMENSION: INCHES. 3. CHMFER OPTIONL 4. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH. MOLD FLSH SHLL NOT EXCEED.5 PER SIDE. THESE DIMENSIONS RE MESURED T THE OUTERMOST EXTREMES OF THE PLS- TIC BODY T DTUM H. 5. THERML PD CONTOUR IS OPTIONL WITHIN DIMENSIONS E, L1, D1 ND E1. INCHES MILLIMETERS DIM MIN MX MIN MX b c c D D E E e.1 BSC.54 BSC H L L L L3.1 BSC.5 BSC M VIEW OPTIONL CONSTRUCTIONS RECOMMENDED SOLDERING FOOTPRINT*.436 XX XXXXXXXXX WLYWWG GENERIC MRKING DIGRMS* XXXXXXXXG YWW YWW XXXXXXXXG K XXXXXX XXYMW.366 IC Standard Rectifier SSG.653 X.63 X PITCH DIMENSIONS: INCHES *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. XXXXXX = Specific Device Code = ssembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb Free Package K = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ON5637E D PK 3 (TO 63, 3 LED) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. PGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 18

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