Power MOSFET. IRF9530SPbF IRF9530STRLPbF a IRF9530STRRPbF a SiHF9530S-E3 SiHF9530STL-E3 a SiHF9530STR-E3 a T C = 25 C.

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1 IRF930, ihf930 Power MOFET PRODUCT UMMRY (V) 100 R D(on) ( ) V G = 10 V 0.30 Q g (Max.) (nc) 38 Q gs (nc) 6.8 Q gd (nc) 1 Configuration ingle G D PK (TO63) D Note a. ee device orientation. G D PChannel MOFET FETURE Halogenfree ccording to IEC 6191 Definition urface Mount vailable in Tape and Reel Dynamic dv/dt Rating Repetitive valanche Rated PChannel 17 C Operating Temperature Fast witching Compliant to RoH Directive 00/9/EC DECRIPTION Third generation Power MOFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The D PK (TO63) is a surface mount power package capable of accommodating die sizes up to HEX. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D PK (TO63) is suitable for high current applications because of its low internal connection resistance and can dissipate up to.0 W in a typical surface mount application. ORDERING INFORMTION Package D PK (TO63) D PK (TO63) D PK (TO63) Lead (Pb)free and Halogenfree ihf930ge3 ihf930trlge3 a ihf930trrge3 a Lead (Pb)free IRF930PbF IRF930TRLPbF a IRF930TRRPbF a ihf930e3 ihf930tle3 a ihf930tre3 a BOLUTE MXIMUM RTING (T C = C, unless otherwise noted) PRMETER YMBOL LIMIT UNIT Drainource Voltage 100 Gateource Voltage V G ± 0 V Continuous Drain Current V G at 10 V T C = C 1 I D T C = 100 C 8. Pulsed Drain Current a I DM 8 Linear Derating Factor 0.9 Linear Derating Factor (PCB Mount) e 0.0 W/ C ingle Pulse valanche Energy b E 00 mj valanche Current a I R 1 Repetiitive valanche Energy a E R 8.8 mj Maximum Power Dissipation T C = C 88 P D Maximum Power Dissipation (PCB Mount) e T = C 3.7 W Peak Diode Recovery dv/dt c dv/dt. V/ns Operating Junction and torage Temperature Range T J, T stg to + 17 oldering Recommendations (Peak Temperature) for 10 s 300 d C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = V, starting T J = C, L =. mh, R g =, I = 1 (see fig. 1). c. I D 1, di/dt 10 /μs, V DD, T J 17 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR or G10 material). * Pb containing terminations are not RoH compliant, exemptions may apply Document Number: Rev. C, 30May11 1

2 IRF930, ihf930 THERML REITNCE RTING PRMETER YMBOL TYP. MX. UNIT Maximum Junctiontombient R thj 6 Maximum Junctiontombient (PCB Mount) a R thj 0 Maximum JunctiontoCase (Drain) R thjc 1.7 Note a. When mounted on 1" square PCB (FR or G10 material). C/W PECIFICTION (T J = C, unless otherwise noted) PRMETER YMBOL TET CONDITION MIN. TYP. MX. UNIT tatic Drainource Breakdown Voltage V G = 0, I D = 0 μ 100 V Temperature Coefficient /T J Reference to C, I D = 1 m 0.10 V/ C Gateource Threshold Voltage V G(th) = V G, I D = 0 μ.0.0 V Gateource Leakage I G V G = ± 0 V ± 100 n = 100 V, V G = 0 V 100 Zero Gate Voltage Drain Current I D = 80 V, V G = 0 V, T J = 10 C 00 μ Drainource Ontate Resistance R D(on) V G = 10 V I D = 7. b 0.30 Forward Transconductance g fs = 0 V, I D = 7. b 3.7 Dynamic Input Capacitance C iss V G = 0 V, 860 Output Capacitance C oss = V, 30 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 93 Total Gate Charge Q g 38 Gateource Charge Q gs I V G = 10 V D = 1, = 80 V, see fig. 6 and 13 b 6.8 nc GateDrain Charge Q gd 1 TurnOn Delay Time t d(on) 1 Rise Time t r V DD = 0 V, I D = 1, TurnOff Delay Time t d(off) R G = 1, R D = 3.9, see fig. 10 b 31 ns Fall Time t f 39 D Between lead, Internal Drain Inductance L D. 6 mm (0.") from package and center of nh G Internal ource Inductance L die contact 7. Drainource Body Diode Characteristics Continuous ourcedrain Diode Current I MOFET symbol D 1 showing the integral reverse Pulsed Diode Forward Current a G I M p n junction diode 8 Body Diode Voltage V D T J = C, I = 1, V G = 0 V b 6.3 V Body Diode Reverse t rr 10 0 ns Recovery Time T J = C, I F = 1, di/dt = 100 /μs b Body Diode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle %. Document Number: Rev. C, 30May11

3 IRF930, ihf930 TYPICL CHRCTERITIC ( C, unless otherwise noted) I D, Drain Current () 10 1 Top Bottom V G 1 V 10 V 8.0 V 7.0 V 6.0 V. V.0 V. V. V I D, Drain Current () 10 1 C 17 C µs Pulse Width T C = C µs Pulse Width = 0 V _01, Draintoource Voltage (V) 91077_03 V G, Gatetoource Voltage (V) Fig. 1 Typical Output Characteristics, T C = C Fig. 3 Typical Transfer Characteristics I D, Drain Current () 91077_ Top Bottom V G 1 V 10 V 8.0 V 7.0 V 6.0 V. V.0 V. V V 0 µs Pulse Width T C = 17 C, Draintoource Voltage (V) Fig. Typical Output Characteristics, T C = 17 C R D(on), Draintoource On Resistance (Normalized) 91077_ I D = 1 V G = 10 V T J, Junction Temperature ( C) Fig. Normalized OnResistance vs. Temperature Document Number: Rev. C, 30May11 3

4 IRF930, ihf930 Capacitance (pf) V G = 0 V, f = 1 MHz C iss = C gs + C gd, C ds horted C rss = C gd C oss = C ds + C gd C iss C oss C rss I D, Reverse Drain Current () C C V G = 0 V _0, Draintoource Voltage (V) 91076_07 V D, ourcetodrain Voltage (V) Fig. Typical Capacitance vs. Draintoource Voltage Fig. 7 Typical ourcedrain Diode Forward Voltage V G, Gatetoource Voltage (V) I D = 1 = 0 V = 0 V = 80 V For test circuit see figure I D, Drain Current () Operation in this area limited by R D(on) 1 T C = C T J = 17 C ingle Pulse 10 µs 100 µs 1 ms 10 ms _06 Q G, Total Gate Charge (nc) 91077_08, Draintoource Voltage (V) Fig. 6 Typical Gate Charge vs. Gatetoource Voltage Fig. 8 Maximum afe Operating rea Document Number: Rev. C, 30May11

5 IRF930, ihf930 R D R g V G D.U.T. I D, Drain Current () V Pulse width 1 µs Duty factor 0.1 % V + DD Fig. 10a witching Time Test Circuit V G 10 % t d(on) t r t d(off) t f 91077_ T C, Case Temperature ( C) Fig. 9 Maximum Drain Current vs. Case Temperature 90 % Fig. 10b witching Time Waveforms 10 Thermal Response (Z thjc ) D = ingle Pulse (Thermal Response) P DM t 1 t Notes: 1. Duty Factor, D = t 1 /t. Peak T j = P DM x Z thjc + T C 91077_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase Document Number: Rev. C, 30May11

6 IRF930, ihf930 Vary t p to obtain required I L I R g D.U.T. + V DD I V DD 10 V t p 0.01 Ω t p Fig. 1a Unclamped Inductive Test Circuit Fig. 1b Unclamped Inductive Waveforms E, ingle Pulse Energy (mj) 91077_1c Top Bottom V DD = V I D tarting T J, Junction Temperature ( C) 17 Fig. 1c Maximum valanche Energy vs. Drain Current Current regulator ame type as D.U.T. 10 V Q G 1 V 0. µf 0 kω 0.3 µf Q G Q GD D.U.T. + V G V G Charge Fig. 13a Basic Gate Charge Waveform 3 m Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors Document Number: Rev. C, 30May11

7 + IRF930, ihf930 Peak Diode Recovery dv/dt Test Circuit D.U.T. + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer + R g dv/dt controlled by R g I D controlled by duty factor D D.U.T. device under test + V DD Note Compliment NChannel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period V G = 10 V a D.U.T. l D waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Body diode forward drop Inductor current V DD Ripple % Note a. V G = V for logic level and 3 V drive devices Fig. 1 For PChannel I D maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: Rev. C, 30May11 7

8 Package Information TO63B (HIGH VOLTGE) (Datum ) 3 E L1 D H 1 C 3 C L B B Detail c B Gauge plane 0 to 8 L3 L L Detail Rotated 90 CW scale 8:1 H 1 B eating plane x b x e x b M M B Plating b1, b3 c ± 0.00 M B Base metal E D1 (c) c1 Lead tip (b, b) ection B B and C C cale: none E1 View MILLIMETER INCHE MILLIMETER INCHE DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E b E b e. BC BC b H b L c L c L c L3 0. BC BC D L ECN: 8110Rev., 1ep08 DWG: 970 Notes 1. Dimensioning and tolerancing per ME Y1.M199.. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.17 mm (0.00") per side. These dimensions are measured at the outmost extremes of the plastic body at datum.. Thermal PD contour optional within dimension E, L1, D1 and E1.. Dimension b1 and c1 apply to base metal only. 6. Datum and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO63B. Document Number: Revision: 1ep08 1

9 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT PECIFICTION ND DT RE UBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DEIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHCompliant fulfill the definitions and restrictions defined under Directive 011/6/EU of The European Parliament and of the Council of June 8, 011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) recast, unless otherwise specified as noncompliant. Please note that some Vishay documentation may still make reference to RoH Directive 00/9/EC. We confirm that all the products identified as being compliant to Directive 00/9/EC conform to Directive 011/6/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as HalogenFree follow HalogenFree requirements as per JEDEC J709 standards. Please note that some Vishay documentation may still make reference to the IEC 6191 definition. We confirm that all the products identified as being compliant to IEC 6191 conform to JEDEC J709 standards. Revision: 0Oct1 1 Document Number: 91000