DISCRETE SEMICONDUCTORS DATA SHEET. BFT93W PNP 4 GHz wideband transistor. Product specification Supersedes data of November 1992

Transcription

1 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data o November 199 March 1994

2 FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. APPLICATIONS It is intended as a general purpose transistor or wideband applications up to GHz. DESCRIPTION Silicon PNP transistor in a plastic, SOT33 (S-mini) package. The uses the same crystal as the SOT3 version, BFT93. PINNING PIN 1 base emitter 3 collector DESCRIPTION handbook, columns 3 1 Top view MBC87 Marking code: X1. Fig.1 SOT33. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter 15 V V CEO collector-emitter voltage open base 1 V I C collector current (DC) 5 ma P tot total power dissipation up to T s =93 C; note 1 3 mw h FE DC current gain I C = 3 ma; V CE = 5 V 5 C re eedback capacitance I C =; V CE = 5 V; =1MHz 1 pf T transition requency I C = 3 ma; V CE = 5 V; 4 GHz = 5 MHz maximum unilateral power gain I C = 3 ma; V CE = 5 V; 15.5 db = 5 MHz; T amb =5 C F noise igure I C = 1 ma; V CE = 5 V;.4 db = 5 MHz T j junction temperature 15 C Note 1. T s is the temperature at the soldering point o the collector pin. March 1994

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 15 V V CEO collector-emitter voltage open base 1 V V EBO emitter-base voltage open collector V I C collector current (DC) 5 ma P tot total power dissipation up to T s =93 C; note 1 3 mw T stg storage temperature C T j junction temperature 15 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance rom junction to soldering point up to T s =93 C; note 1 19 K/W Note to the Limiting values and Thermal characteristics 1. T s is the temperature at the soldering point o the collector pin. CHARACTERISTICS T j =5 C (unless otherwise speciied). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-o current I E =; V CB = 5 V 5 na h FE DC current gain I C = 3 ma; V CE = 5 V 5 T transition requency I C = 3 ma; V CE = 5 V; 4 GHz =5MHz; T amb =5 C C c collector capacitance I E =i e =; V CB = 5 V; 1. pf =1MHz C e emitter capacitance I C =i c =; V EB =.5 V; 1.4 pf =1MHz C re eedback capacitance I C =; V CE = 5 V; 1 pf =1MHz maximum unilateral power I C = 3 ma; V CE = 5 V; 15.5 db gain; note 1 =5MHz; T amb =5 C I C = 3 ma; V CE = 5 V; 1 db =1GHz; T amb =5 C F noise igure s = opt ; I C = 1 ma;.4 db V CE = 5 V; =5MHz s = opt ; I C = 1 ma; V CE = 5 V; =1GHz 3 db Note 1. is the maximum unilateral power gain, assuming s 1 is zero. = 1 s 1 log s 11 1 s db. March

4 4 MLB44 6 MLB45 Ptot (mw) 3 h FE T ( o s C) I C (ma) V CE = 5 V; T j =5 C. Fig. Power derating as a unction o the soldering point temperature. Fig.3 DC current gain as a unction o collector current, typical values. C re (pf) 1.6 MLB46 6 T (GHz) V = CE 1 V MLB V V CB (V) 1 1 I C (ma) 1 I C =; =1MHz. =5MHz; T amb =5 C. Fig.4 Feedback capacitance as a unction o collector-base voltage, typical values. Fig.5 Transition requency as a unction o collector current, typical values. March

5 3 MLB48 3 MLB49 gain gain MSG MSG I C (ma) I C (ma) V CE = 5 V; =5MHz. V CE = 5 V; =1GHz. Fig.6 Gain as a unction o collector current, typical values. Fig.7 Gain as a unction o collector current, typical values. 5 gain 4 MLB43 5 gain 4 MLB431 3 MSG 3 MSG 1 1 G max G max V CE = 5 V; I C = 1 ma. V CE = 5 V; I C = 3 ma. Fig.8 Gain as a unction o requency, typical values. Fig.9 Gain as a unction o requency, typical values. March

6 9 o o.5 45 o GHz o o. 4 MHz o.5 45 o 1 9 o MLB V CE = 1 V; I C = 3 ma. Fig.1 Common emitter input relection coeicient (s 11 ), typical values. 9 o 135 o 45 o 4 MHz 18 o GHz o 135 o 45 o 9 o MLB435 V CE = 1 V; I C = 3 ma. Fig.11 Common emitter orward transmission coeicient (s 1 ), typical values. March

7 9 o 135 o 45 o 3 GHz 18 o MHz o 135 o 45 o 9 o MLB436 V CE = 1 V; I C = 3 ma. Fig.1 Common emitter reverse transmission coeicient (s 1 ), typical values. 9 o o.5 45 o o o. 3 GHz 4 MHz o.5 45 o 1 MLB o V CE = 1 V; I C = 3 ma. Fig.13 Common emitter output relection coeicient (s ), typical values. March

8 6 MLB43 6 MLB433 F 4 1 GHz F 4 I = C 3 ma ma 5 MHz 1 ma 5 ma 1 1 I C (ma) V CE = 5 V. V CE = 5 V. Fig.14 Minimum noise igure as a unction o collector current, typical values. Fig.15 Minimum noise igure as a unction o requency, typical values. March

9 9 o o.5 45 o.8.6. F min =.4 db Γopt o F = 3 db o. F = 4 db 5 F = 5 db 135 o.5 45 o V CE = 5 V; I C = 1 ma; = 5 MHz; Z o = o MLB Fig.16 Common emitter noise igure circles, typical values. 9 o o.5 45 o.8.6. F min =.9 db o. Γ opt o. F = 3.5 db. F = 4 db 5 F = 5 db 135 o.5 45 o V CE = 5 V; I C = 1 ma; = 1 GHz; Z o = o MLB Fig.17 Common emitter noise igure circles, typical values. March

10 SPICE parameters or the crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS aa BF NF 1. 4 VAF 19.1 V 5 IKF ma 6 ISE 9.94 A 7 NE BR NR m 1 VAR V 11 IKR 6.74 ma 1 ISC 3.4 A 13 NC RB IRB 1. A 16 RBM RE. m 18 RC (1) XTB. (1) EG 1.11 EV 1 (1) XTI 3. CJE 1.57 pf 3 VJE 6. mv 4 MJE 38. m 5 TF ps 6 XTF.9 7 VTF.989 V 8 ITF ma 9 PTF. deg 3 CJC pf 31 VJC mv 3 MJC 81.3 m 33 XCJC 1. m 34 TR 3. ns 35 (1) CJS. F SEQUENCE No. PARAMETER VALUE UNIT 36 (1) VJS 75. mv 37 (1) MJS. 38 FC m Note 1. These parameters have not been extracted, the deault values are shown. handbook, halpage B L1 Cbe L B QL B = 5; QL E = 5; QL B,E () = QL B,E (/Fc); Fc = scaling requency = 1 GHz. Fig.18 Package equivalent circuit SOT33. List o components (see Fig.18). B' C cb MBC964 DESIGNATION VALUE UNIT C be F C cb 1 F C ce 1 F L1.34 nh L.1 nh L3.34 nh L B.6 nh L E.6 nh E' E C' L E L3 L Cce C March

11 Table 1 Common emitter scattering parameters: V CE = 5 V; I C = 5 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table Noise data: V CE = 5 V; I C = 5 ma. F min (ratio) opt (deg) R n March

12 Table 3 Common emitter scattering parameters: V CE = 5 V; I C = 1 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 4 Noise data: V CE = 5 V; I C = 1 ma. F min (ratio) opt (deg) R n March

13 Table 5 Common emitter scattering parameters: V CE = 5 V; I C = ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 6 Noise data: V CE = 5 V; I C = ma. F min (ratio) opt (deg) R n March

14 Table 7 Common emitter scattering parameters: V CE = 5 V; I C = 3 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 8 Noise data: V CE = 5 V; I C = 3 ma. F min (ratio) opt (deg) R n March

15 Table 9 Common emitter scattering parameters: V CE = 1 V; I C = 5 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 1 Noise data: V CE = 1 V; I C = 5 ma. F min (ratio) opt (deg) R n March

16 Table 11 Common emitter scattering parameters: V CE = 1 V; I C = 1 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 1 Noise data: V CE = 1 V; I C = 1 ma. F min (ratio) opt (deg) R n March

17 Table 13 Common emitter scattering parameters: V CE = 1 V; I C = ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 14 Noise data: V CE = 1 V; I C = ma. F min (ratio) opt (deg) R n March

18 Table 15 Common emitter scattering parameters: V CE = 1 V; I C = 3 ma. s 11 s 1 s 1 s MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) Table 16 Noise data: V CE = 1 V; I C = 3 ma. F min (ratio) opt (deg) R n March

19 PACKAGE OUTLINE Plastic surace-mounted package; 3 leads SOT33 D B E A X y H E v M A 3 Q A 1 A1 c e1 bp w M B Lp e detail X 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max 1.1 mm.1.8 b p c D E e e 1 H E Lp Q v w OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT33 SC March

20 DATA SHEET STATUS DOCUMENT PRODUCT STATUS (1) STATUS () DEFINITION Objective data sheet Development This document contains data rom the objective speciication or product development. Preliminary data sheet Qualiication This document contains data rom the preliminary speciication. Product data sheet Production This document contains the product speciication. Notes 1. Please consult the most recently issued document beore initiating or completing a design.. The product status o device(s) described in this document may have changed since this document was published and may dier in case o multiple devices. The latest product status inormation is available on the Internet at URL DEFINITIONS The inormation and data provided in a Product data sheet shall deine the speciication o the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to oer unctions and qualities beyond those described in the Product data sheet. DISCLAIMERS Limited warranty and liability Inormation in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness o such inormation and shall have no liability or the consequences o use o such inormation. In no event shall NXP Semiconductors be liable or any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost proits, lost savings, business interruption, costs related to the removal or replacement o any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach o contract or any other legal theory. Notwithstanding any damages that customer might incur or any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer or the products described herein shall be limited in accordance with the Terms and conditions o commercial sale o NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to inormation published in this document, including without limitation speciications and product descriptions, at any time and without notice. This document supersedes and replaces all inormation supplied prior to the publication hereo. Suitability or use NXP Semiconductors products are not designed, authorized or warranted to be suitable or use in lie support, lie-critical or saety-critical systems or equipment, nor in applications where ailure or malunction o an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability or inclusion and/or use o NXP Semiconductors products in such equipment or applications and thereore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein or any o these products are or illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable or the speciied use without urther testing or modiication. Customers are responsible or the design and operation o their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability or any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and it or the customer s applications and products planned, as well as or the planned application and use o customer s third party customer(s). Customers should provide appropriate design and operating saeguards to minimize the risks associated with their applications and products. March 1994

21 NXP Semiconductors does not accept any liability related to any deault, damage, costs or problem which is based on any weakness or deault in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible or doing all necessary testing or the customer s applications and products using NXP Semiconductors products in order to avoid a deault o the applications and the products or o the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as deined in the Absolute Maximum Ratings System o IEC 6134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation o the device at these or any other conditions above those given in the Recommended operating conditions section (i present) or the Characteristics sections o this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly aect the quality and reliability o the device. Terms and conditions o commercial sale NXP Semiconductors products are sold subject to the general terms and conditions o commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions o the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase o NXP Semiconductors products by customer. No oer to sell or license Nothing in this document may be interpreted or construed as an oer to sell products that is open or acceptance or the grant, conveyance or implication o any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization rom national authorities. Quick reerence data The Quick reerence data is an extract o the product data given in the Limiting values and Characteristics sections o this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualiied products Unless this data sheet expressly states that this speciic NXP Semiconductors product is automotive qualiied, the product is not suitable or automotive use. It is neither qualiied nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability or inclusion and/or use o non-automotive qualiied products in automotive equipment or applications. In the event that customer uses the product or design-in and use in automotive applications to automotive speciications and standards, customer (a) shall use the product without NXP Semiconductors warranty o the product or such automotive applications, use and speciications, and (b) whenever customer uses the product or automotive applications beyond NXP Semiconductors speciications such use shall be solely at customer s own risk, and (c) customer ully indemniies NXP Semiconductors or any liability, damages or ailed product claims resulting rom customer design and use o the product or automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product speciications. March

22 provides High Perormance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interace, Security and Digital Processing expertise Customer notiication This data sheet was changed to relect the new company name NXP Semiconductors, including new legal deinitions and disclaimers. No changes were made to the technical content, except or package outline drawings which were updated to the latest version. Contact inormation For additional inormation please visit: For sales oices addresses send to: NXP B.V. 1 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent o the copyright owner. The inormation presented in this document does not orm part o any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher or any consequence o its use. Publication thereo does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/1/pp Date o release: March 1994