arxiv: v1 [cond-mat.mes-hall] 20 Apr 2018

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1 Massive quality factors of disorder-induced cavity modes in photonic crystal waveguides through long-range correlations J. P. Vasco Department of Physics, Queen s University, Kingston, Ontario, Canada, K7L 3N6 and Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne EPFL, CH-1015 Lausanne, Switzerland arxiv: v1 [cond-mat.mes-hall] 20 Apr 2018 S. Hughes Department of Physics, Queen s University, Kingston, Ontario, Canada, K7L 3N6 We study the effects of long-range correlations on the disorder-induced cavity modes in disordered photonic crystal waveguides. We demonstrate that inter-hole correlations have negative contributions to the total out-of-plane radiative losses, leading to a pronounced enhancement of the quality factor, Q, and Q/V figures of merit in the long-range correlation regime. We propose a new way of creating massive quality cavity modes, in excess of 100 M, by exploiting long-range disorder. The rich physics behind phase changes, such as through the metal-insulator transition [1], has been widely studied in electronic systems where disorder plays an important role. Indeed, the possibility of controlling such phase transitions by including correlations in the perturbed periodic potential has motivated systematic studies on the effects of long-range correlations to either localize or delocalize the electronic wave function throughout the system [2, 3]. On the other hand, the interplay between order and disorder in photonics systems, specifically, dielectric photonic crystal slabs (PCS) waveguides, has been mainly focused during the last two decades on optimizing the performance of photonic devices where effects of disorder are assumed to be detrimental [4 6]. Despite this, there is now a growing interest of employing high-quality disordered-induced localized modes on PCS waveguides, e.g., into the Anderson localization regime, to study important phenomena in cavity-qed [7], random lasing [8] and optical sensing [9], where extrinsic disorder is intentionally introduced to enhance localization, in addition to a small quantity of intrinsic disorder coming from unavoidable imperfections during the fabrication process. Nevertheless, only the effects of short-range (intra-hole) correlations has been investigated in these PCS devices with non-trivial results [10, 11], and the effects of long-range correlations have only been addressed in simple one-dimensional systems, including dielectric PCs [12], metallic PCS [13] and microwave waveguides [14], whose results suggest a rich underlying physics which has hitherto remained unexplored in higher dimensions. In fact, due to the different motivations to exploit disorder effects in photonics and electronics, a systematic study on the effects of long-range correlations on disordered PCS is now highly desired. In this Letter, we close this gap, and report results on the effects of inter-hole correlations on disorderedinduced localized modes in disordered PCS waveguides. Surprisingly, we find that long-range correlations induce a negative contribution to the total radiation losses of the cavity-like modes localized along the disordered waveguide, leading to a massive enhancements of the quality factor, Q, and Q/V (with V the effective mode volume) figures of merit commonly studied in PC cavity physics. We then introduce an original way of creating high quality modes by taking advantage of the Anderson localization in long-length LN cavities, by exploiting a longrange correlated disordered dielectric profile in the design. Our results show, for first time to our knowledge, the non-trivial effects of long-range correlations in PCS systems and offer promising advantages for engineered disorder over exhausting (and intractable) optimization procedures to design ultra-high Q photonic devices. Theoretically, we investigate the disordered PCS waveguides using the Bloch mode expansion method (BME) [15], in particular, we focus on the W1 system (one row of holes removed in a triangular lattice) whose physical properties are well known. The BME approach uses the magnetic field of the disordered mode H β (r), which is expanded in the Bloch mode basis of the nondisorderedwaveguide,i.e., H kn (r), wherekandnarethe wave vector and band index, respectively, of the Bloch mode inside the projected Brillouin zone of the W1 system. The corresponding expansion coefficients are then determined by solving Maxwell s equations, which are conveniently written as a simple linear eigenvalue problem for isotropic, non-magnetic, transparent and linear photonic systems. To compute the states H kn (r), we apply the guided mode expansion method (GME) in which the PCS modes are expanded in the guided mode basis of the effective homogeneous slab [16]. We consider Si material parameters, with refractive index n = 3.46, hole radii R = 0.25 and slab thickness d = 0.55a, where R and d are written in terms of the lattice parameter a of the underlying hexagonal lattice of holes. The modes H kn (r) are accurately computed in a supercell of dimensions a 5 3a with one guided TE mode and a momentum cutoff a G max = 19, determining a basis of 243 plane waves or, equivalently, 243 reciprocal lattice vectors G. The Bloch mode expansion is then carried out utilizing the complete set of bands (243) in a disordered

2 2 FIG. 1. (a) Average Q (red curve) and standard deviation δq (blue curve) of the cavity mode quality factors induced by disorder (in log-scale) as a function of the correlation length l c. The maximum Q found in the distribution is represented by the green curve. (b) Corresponding effective mode volumes from (a), with the minimum found in the distribution represented by the green curve. (c) Corresponding enhancement factor Q/V from (a) and (b) with the maximum Q/V found in the distribution represented by the green curve. 20 independent statistical realizations of the disordered system were considered for each l c with σ c = 0.005a supercell of dimensions 100a 5 3a and, consequently, 100 k points along the 1D projected Brillouin zone of the non-disordered PCS waveguide. The radiative decay γ β of the disordered mode is numerically estimated via the photonic golden rule [15, 16], where the total transition probability from the mode H β (r) to a radiative mode H rad (r) is computed and weighted with the corresponding electromagnetic density of radiative states. The mode quality factor is then Q β = ω β /(2γ β ), with ω β representing the resonant frequency of the β-th mode. Disorder is introduced in the system by considering random fluctuations of the hole radii with Gaussian probability, and fluctuations from different holes are assumed to be exponentially correlated: R(ρ h ) R(ρ h ) = σ 2 c e ρ h ρ h lc, (1) where σ c is the standard deviation of the Gaussian fluctuations, R(r h ) is the radius fluctuation of the hole positioned at ρ h = (x,y) h and l c is the correlation length. Figure 1(a) shows the statistical behavior of the averaged Q β in log-scale as a function of the correlation length for σ c = 0.005a. In order to avoid finite-size effects induced by the supercell, we only consider the cavity modes whose localization length is smaller than 25a to compute the average, Q (red curve), and standard deviation, δq (blue curve); we employ the inverse participation number to estimate the localization length of the disordered cavity-like modes [17]. Furthermore, 20 independent statistical realizations of the disordered system are considered to compute the first and second moments of the Q distributions, which accurately describes the statistics of the radiation losses in the same geometry [18]. The mean quality factor increases rapidly for increasing l c and starts to saturate around l c = 100a, yielding a Q improvement of two orders of magnitude with respect to the non-correlated case (l c 0); the same behavior is also seen in the standard deviation δq and Q max (green curve), where the latter is the largest quality factor found in the statistical ensemble (right-tail of the quality factor distribution). The corresponding effective mode volumes, computed by means of the well know expression V β 1/(ǫ(r 0 ) E β (r 0 ) 2 ) (where r 0 is taken at the electric field peak), are shown in Fig. 1(b). A slow increasing of V is seen as l c increases, leading to a maximum of 20% change with respect to the non-correlated case l c 0. These mode volumes are similar to typical Andersonlike cavity modes in PCS waveguides where the localizations lengths are much smaller than the total waveguide length [17], thus suggesting the Anderson localization phenomenon as the main mechanism acting here for cavity light confinement. The minimum volume in the V distribution, V min (green curve), follows the same trend of V, while the standard deviation δv remains approximately constant around (λ/n) 3 as l c changes. The very small variations of V with respect to Q allows us to conclude, through Fig. 1(c), that the enhancement factor Q/V is mainly determined by the Q distributions; thus, somewhat surprisingly, the factor Q/V can be increased up to two orders of magnitude by introducing long-range correlations in the disordered waveguide. To help explain the results of Fig. 1, we compute the average of the radiative decay from the photonic golden rule [15, 16]. We first assume that the disordered modes are dominated by the Bloch mode in the band-edge of the non-disordered waveguide H wg (r), which is a good approximation in the weak-disorder regime. This assumption allow us to estimate the average γ from the fluctuations of the dielectric profile only: γ = π rad S.cell ρ rad (z) η(r)η (r ) Ξ(r)Ξ (r )drdr, (2) where ω is the frequency of the non-disordered waveguide mode at the band-edge, ρ rad (z) is the radiative den-

3 3 sity of states of the effective homogeneous system [16], η(r) = 1/ǫ(r) with ǫ(r) representing the disordered dielectric function, and Ξ(r) = [ H rad (r)] [ H wg(r)] is the projection of the approximated disordered state on the radiative one. This approach is formally equivalent to the Green function formalism, using the second-order Born approximation, to compute the out-of-plane power loss in disordered PCS waveguides [5, 19]. The integrals in Eq. (2) have to be computed over all the supercell (S.cell) volume with z ranging from to, however, since fluctuations occur solely where disorder is present, we focus on the region within the slab (z ranging from d/2 to d/2) in which the dielectric profile η(r) depends on the in-plane coordinates ρ = (x,y) only and ρ rad does not depend on z. Therefore, we expand η(ρ) in a set of two-dimensional plane waves η(ρ) = G η(g)e ig ρ, (3) where G is the reciprocal lattice vector of the disordered supercell. In the weak-disorder regime, i.e., R/R 1, the first order approximation to η(g) is given by with η(g) η 0 (G)+α(G) h η 0 (G) = 1 δ G,0 + 2πR2 (ǫ s ǫ R ) J 1 ( G R) ǫ s ǫ s ǫ R A S.cell G R(h)e ig ρ h, (4) e ig ρ h, α(g) = 2πR(ǫ s ǫ R ) ǫ s ǫ R A S.cell J 0 ( G R). (5) Here,ǫ s andǫ R arethedielectricconstantsoftheslaband holes, respectively, A S.cell is the area of the supercell and J m represents the Bessel function of m order. In Eq. (4), the first term corresponds to the Fourier coefficient of the non-disorder profile, while the second term is the Fourier coefficient of the random fluctuations. By using Eqs. (1), (3) and (4) in Eq. (2), and considering that R = 0 and R 2 = σ 2 c,wefindthattheaverageoftheradiation losses can be written as where γ non-corr = π γ = γ non-corr + γ corr, (6) h γ corr = πσ2 c GG [η 0 (G)η 0 (G )+α(g)α(g )σ 2 c e i(g G ) ρ h ]I rad (G,G ), (7) [α(g)α(g ) GG h h e h ρ h ρ h lc e ig ρ h e ig ρ h ]I rad (G,G ), (8) I rad (G,G ) = ρ rad e ig ρ e ig ρ rad Ξ(r)Ξ (r )drdr. (9) In Eqs. (6), (7) and (8), γ non-corr represents the contribution of disorder to the total averaged out-of-plane losses with no correlations, while the term γ corr represents the contributions coming from the inter-hole correlations only. Since γ < γ non-corr, or equivalently Q > Q non-corr = Q (l c 0), from the results of Fig. 1, we conclude that inter-hole correlations add negative contributions to the total radiative losses. This fact, conjointly with Eq. (6), are the main results of this Letter. Specifically, in the regime of long-range correlations, the correlation function exp( ρ h ρ h /l c ) tends to its maximum value 1, thus maximizing the negative contributions to γ and correspondingly maximizing the average quality factor of the disorder-induced cavities modes. Thesaturationof Q around100ainfig.1(a)isthenunderstood as follows: for correlations lengths larger than the largest inter-hole separation (which is around the waveguide length L) the correlation function starts to saturate to its maximum value. This fact also shows that the particular shape of the correlation function is not so important when the system falls into the strong inter-hole correlation regime, i.e., when l c > L. The green curve in Fig. 1(a) represents an efficient design to support ultra-high Q cavity modes when longrange correlations are considered; in fact, it has been recently shown that, in the strong localization regime, disorder-induced cavity modes in waveguides can be safely bounded with mirrors with negligible effects on the resonant frequencies and quality factors [18]. Here, we take advantage of such phenomena, and long-range correlations, to obtain ultra-high Q LN PCS cavities without any exhaustive optimization procedure; our disorder simulations easily find the massive Q designs. We show, in Fig. 2, three different cases from the green curves in Figs. 1(a) and 1(c) where the highest values of Q and/or Q/V are obtained. In particular, we choose the highest Q at l c = 60a [Fig. 2(a)], the highest Q/V at l c = 60a [Fig. 2(b)], and the highest Q and Q/V at l c = 100a [Fig. 2(c)]. In these log-scale plots, the horizontal black line, Q W1 corr., represents the Q value of the disorder-induced cavity mode in the W1 system for each case, while the red line, Q corr. cav., is the Q factor of the LN cavity mode, as a function of the cavity length, built on the corresponding disorder realization of the long-range correlated W 1 system, i.e., we design a LN cavity around the W1 disordered mode by adding mirrors (symmetrically distributed with respect to the mode electric field peak) on the specific disordered correlated geometry. Eventually, for long cavity lengths, the disordered mode becomes insensitive to the cavity boundary condition, and both LN cavity mode and W1 disorder-induced localized mode become equivalent [18]. We also superimpose in Figs. 2(a)-2(c) the fundamental mode quality factor of the non-optimized LN with no disorder, Q σc=0 cav., in order to evidence the Q enhancement when long-range correlations are considered. We

4 4 FIG. 2. (a) Quality factors (log-scale) of the LN cavity, Qcorr. cav. (red curve), designed throughout the disordered long-range correlated waveguide realization, which determines the highest disorder-induced mode quality factor, QW 1 corr. (horizontal c =0 black curve), at lc = 60a as a function of the cavity length. The non-optimized and non-disordered fundamental mode Qσcav. is shown in green as a function of the cavity length. The long-range correlated L35 case is highlighted as Design 1. (b) same as (a) for the highest Q/V at lc = 60a. The long-range correlated L35 case is highlighted as Design 2. (c) Same as (a) for the highest Q and Q/V at lc = 100a. The long-range correlated L35 case is highlighted as Design 3. (d) Intensity profile of the disordered-induced localized mode in the W 1 long-range correlated system in (b). (e) Intensity profile of the Design 2 in (b). obtain a Q improvement of one order of magnitude for the longest cavities, with respect to the non-optimized and non-disordered case, by strategically adding interhole long-range correlations in the system, again without any exhaustive optimization procedure. Indeed, a numerical optimization of this geometry would be unfeasible, and these procedures are usually highly parameterconstrained and would miss such a design. The intensity profiles of the disordered modes in the center of the slab ( D(ρ, z = 0) 2 = ǫ(ρ)2 E(ρ, z = 0) 2 ) are shown in Figs. 2(d) and 2(e) for the W 1 case and L35 cavity case, respectively, from Fig. 2(b). Here, one clearly sees the equivalence between the disordered modes in both waveguide and long-length cavity systems. We next investigate the effects of fabrication imperfections on the three highlighted designs of the L35 cavity in Figs. 2(a)-2(c). Fabrication-induced or intrinsic disorder is considered here by adding non-correlated Gaussian fluctuations in the hole radii of the long-range correlated design, in particular, we adopt the state-of-the-art disorder magnitude, relevant to Si fabrication techniques, which is σi = a [20], i.e., around 10 times smaller than σc. As in the case of correlated disorder, we consider 20 statistical realizations to compute the statistical distributions of Q and V induced by intrinsic imperfections. Results are summarized in Table I where the averaged value over the intrinsic disorder realizations is represented by hiσi. Given the ultra-high Q of the correlated designs, the relative quality factor decreasing in these cavities, with respect to the no intrinsic disorder case, is larger than in the non-optimized case (with no correlations); nevertheless, we obtain hqiσi and hq/v iσi values which are still up to 3 and 7 times larger, respectively, when the long-range correlated design is considered as the optimum one. Furthermore, these averaged values in the correlated systems are even larger than the ones obtained in the pure non-disordered and non-optimized case, evidencing again, the potential benefits of engineered disorder to improve cavity figures of merit as Q and Q/V. Finally, we compare in Table II our best (but likely not optimized yet) long-range correlated cavity design (design 2 in Table I) with ultra-high Q cavities embedded in Si PCS. It is important to stress that our correlated cavities have been naturally obtained from the statistics without applying any demanding optimization method, thus demonstrating the very non-trivial role of hole-hole long-range correlations, as well as their benefits on improving the device performance. In summary, we have systematically investigated the effects of inter-hole correlations on the disorderedinduced localized modes emerging in disordered PCS waveguides. We have demonstrated that such hole-hole correlations induce negative contributions to the total averaged out-of-plane losses of these cavity-like states, thus enhancing the corresponding averaged quality factor up to two orders of magnitude with respect to the

5 5 TABLE I. Optical properties of the optimized long-range correlated fundamental modes in the L35 cavity and the non-optimized one with no correlations. The magnitude of non-correlated intrinsic disorder considered is σ = a. Q Q σi V (λ/n) 3 V σi (λ/n) 3 Q/V (λ/n) 3 Q/V σi (λ/n) 3 Fundamental L35 long-range correlated modes Design Design Design Non-optimized L35 fundamental cavity mode with no correlations TABLE II. State-of-the-art super-high Q cavities in Si. The numerical values are presented in units of Cavity Q Q σi Q/V σi (n/λ) 3a Method L4/3 [21] b 31.8 b Genetic algorithms L17 [20] Leaky components Design long-range correlations a We assume V σi = V b Extrapolated for σ i = a one obtained with non-correlated disorder. We then proposed a new way of creating ultra-high Q and Q/V cavities where the long-range correlated disordered design is taken as the optimum one without carrying out any exhaustive optimization procedure. These results are especially relevant for designing high-quality PC devices with engineered disorder and certainly open a wide range of new possibilities to explore the non-trivial effects of longrange correlations in PCS platforms. This work was funded by the Natural Sciences and Engineering Research Council of Canada, and Queens University, Canada. We gratefully acknowledge Nishan Mann for useful discussions. This research was enabled in part by computational support provided by the Centre for Advanced Computing( and Compute Canada ( juan.vasco@epfl.ch shughes@queensu.ca [1] M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 1039 (1998). [2] F. A. B. F. de Moura and M. L. Lyra, Phys. Rev. Lett. 81, 3735 (1998). [3] C. Pedro, B.-G. Pedro, I. P. Ch., and S. H. Eugene, Nature 418, 955 (2002). [4] D. Gerace and L. C. Andreani, Opt. Lett. 29, 1897 (2004). [5] S. Hughes, L. Ramunno, J. F. Young, and J. E. Sipe, Phys. Rev. Lett. 94, (2005). [6] E. Kuramochi, M. Notomi, S. Hughes, A. Shinya, T. Watanabe, and L. Ramunno, Phys. Rev. B 72, (R) (2005). [7] L. Sapienza, H. Thyrrestrup, S. Stobbe, P. D. Garcia, S. Smolka, and P. Lodahl, Science 327, 1352 (2010). [8] J. Liu, P. D. García, S. Ek, N. Gregersen, T. Suhr, M. Schubert, J. Mørk, S. Stobbe, and P. Lodahl, Nat. Nan. 9, 285 (2014). [9] O. J. Trojak, T. Crane, and L. Sapienza, Appl. Phys. Lett. 111, (2017). [10] M. Minkov and V. Savona, Opt. Lett. 37, 3108 (2012). [11] N. Mann, M. Patterson, and S. Hughes, Phys. Rev. B 91, (2015). [12] S. F. Liew and H. Cao, J. Opt. 12, (2010). [13] D. Nau, A. Schönhardt, C. Bauer, A. Christ, T. Zentgraf, J. Kuhl, M. W. Klein, and H. Giessen, Phys. Rev. Lett. 98, (2007). [14] U. Kuhl, F. M. Izrailev, and A. A. Krokhin, Phys. Rev. Lett. 100, (2008). [15] V. Savona, Phys. Rev. B 83, (2011). [16] L. C. Andreani and D. Gerace, Phys. Rev. B 73, (2006). [17] J. P. Vasco and S. Hughes, Phys. Rev. B 95, (2017). [18] J. P.VascoandS.Hughes, ACSPhoton. Article ASAP. [19] M. Patterson, S. Hughes, S. Combrié, N.-V.-Q. Tran, A. De Rossi, R. Gabet, and Y. Jaouën, Phys. Rev. Lett. 102, (2009). [20] T. Asano, Y. Ochi, Y. Takahashi, K. Kishimoto, and S. Noda, Opt. Express 25, 1769 (2017). [21] M. Minkov, V. Savona, and D. Gerace, Appl. Phys. Lett. 111, (2017).

Controlling Anderson localization in disordered photonic crystal waveguides

Controlling Anderson localization in disordered photonic crystal waveguides P. D. García, S. Smolka, S. Stobbe, and P. Lodahl DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark,