Tishreen University Journal for Research and Scientific Studies - Basic Sciences Series Vol. ( ) No. ( )

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1 Tishreen University Journal for Researh and Sientifi Studies - Basi Sienes Series Vol. No. 7 m () s 2 m 1 m V ()

2 Tishreen University Journal for Researh and Sientifi Studies - Basi Sienes Series Vol. No. The Study of Photoeletrial Properties of Amorphous Hydrogenated Silion and Possibility of Using it in Eletrophotography Layers Dr. Hasan Abdulkarim Souleman (Reeived / /. Aepted / / ) ABSTRACT In this researh, we studied the effet of the pressure of a mixture of Argon- Hydrogen gas on the eletrial properties and photo-properties of thin films (thikness 7 m ) prepared from amorphous hydrogenated silion () and the forms of the inorporation of hydrogen to it. Also, we studied the influene of inreasing the thikness of layers on the density of loalized states in energy gap. Then, we determined the ritial value of the gas mixture pressure, whih is onsistent with maximum value of the ratio of the photoondutivity to dark ondutivity, the ritial hange of dark ondutivity parameters and, IR-absorption spetrum data of these layers. Also, we alulated Urbah's energy of thin films and onluded the impossibility of using them in single strutured eletrophotography layers, beause they don't have the required enough dark speifi resistane. Finally, we were able to get the disharge urve in the darkness ase of the triple strutured eletrophotography layers, where the initial disharge potential inreased by V and the disharge time overreahed s for this urve, when the thikness of amorphous arbide silion () layers inreased from 1 m to 2 m. * Assoiate Professor, Physis Department, Faulty of Sienes, Tishreen University, Lattakia, Syria. ٣٠

3 Tishreen University Journal. Bas Sienes Series Key words: eletrophotography layers - thin films - amorphous hydrogenated silion (silion arbide)-speifi resistane-pressure of the gas mixture- the dark ondutivity the photoondutivity. () Eletrophotography Thin Films Amorphous Hydrogenated Silion Interfae Photoondutors Layers m Si 11, Se C 20 m Spear Le-Comber 9.m 7.m Y (a-siy:h) Ge C Multilayer Strutures 12 m

4 0.5 kv () 20 m 7 m Amorphous Hydrogenated Carbide (a-siс:h) N E Distribution of Loalized in Energy Gap Density of States Ar / H 7 /1 2 Mono-rystalline Silion 3 m / h W s 2.8W / m 2 High Frequeny Sputtering 15m Speifi Disharge Power A Temperature Substrate T S 400 C ٣٢

5 Tishreen University Journal. Bas Sienes Series A 20 m 3 P 4 mm. Hg 7 m W m W 1 m a- 12.m Si:H Deposition Speed (r) W r ph / d W W r W Morphology ph / d P W P Atomi Struture Relaxation 400C W 500W 0 Perkin-Elmer P W P Exponential Fator of Dark Condutivity Infrared Spetrosopy Speord I 400C d Ativation Energy P P m P P (a-siс:h) NE

6 I Walter's Convolution 20 / I2000 NE Constant h N E Equation Photourrent E gh E de h h N. h gh E E Urbah Absorption Edge N(E), ev.m 20 ln h exp h / W s 2.8W / m 2 400C E-E, ev P 3 4 mm. Hg k 20m 1 k 2000m SiH 2 1 SiH k 2000m Partial mm. Hg k 20m I 1 20/ I2000 Hydrogen Pressure ٣٤

7 Tishreen University Journal. Bas Sienes Series SiH NE % 4 3 mm.hg 1 3 mm.hg SiH 2 SiH mm. Hg NE W s 2.8W / m, mev 2 400C P 3 4 mm. Hg P P 4 NE 1 m 3 mm. Hg ph / d Opti Investigation Data P 3 4 mm. Hg op E g Px, mm.hg 3 2 mm. Hg SiH SiH Dangling Bonds Column Struture (Si-Si) Columns

8 Texture Meyer-Neldel Rule 1,. 0 4 m exp / kt 0 T d 0 exp / T kt k ev ev, max / ph d max m ,max 5. m 1. m 1 1 a m s Generation and Transport Layers ph / d I 20/ I V Si:H ٣٦

9 Tishreen University Journal. Bas Sienes Series Bloking and 2 m 1 m Passivity Layers o. A NE, mev E op g, ev Px, mm.hg Px, mm.hg op E g NE 3, 1 N E ev. m E E v NE A o. E E, ev A 0.11 A 0.44 A m 20 m

10 t U A O 2 3 U, V A V 2 m s A A O / a Si : H / a SiC : H / 2 3 U 1 m Urem A A O / a Si : H / a SiC : H / 2 2 t, s Remained U rem V V Potential Amorphous Selenium (a-se) ٣٨

11 Tishreen University Journal. Bas Sienes Series a- P 3 4 mm. Hg 20 m 7 m Si:H 0 / ph d max SiH SiH 3.5 max I 20/ I2000 ph / d mev 11. m 2 m 1 m s s A A O / a Si : H / a SiC : H / 2 3

12 - PARK, H.R.; OH, D.S., Change in Bulk Defet Density of Hydrogenated Amorphous Silion by Bias Stress in Thin Film Transistor Strutures, App. Phys. Let., Vol., N.,,. - SOULEMAN, H.; ZEIN EDDINE, A., Study of Eletrial Properties of a Triple Juntion Solar Cell Type GaAs/GaInP/Ge, Tishreen University Journal for Studies and Sientifi Researh, Basi Siene Series, Vol., Nº.,, P.. - LECOMBER, L.; SPEAR, Y., The Spetrosopy of Loalized States, The Phys. of Hydrogenated Amorphous Silion, Pt. II, Ed. JOANNOPOULOS, J.D.; LUCOVSKY, G., Berlin, Springer-Verlag,. () - AIDA, M. S.; RAHMANE, S., Measurement Of The Striking Fore Of Ar Ions On The Substrate During Sputter Deposition Of Thin Films, Thin Solid Films, N,, -. - VANECEK, M.; ABRAHAM, A.; STIKA, O., Gap States Density In Dedued From Subgap Optial Absorption Measurement On Shottky Solar Cells, Phys. Stat. Solid (a), Vol.,,. - БАЛАГУРОВ, Л. А.; КАРПОВА, Н. И.; ОМЕЛЬЯНВСКИЙ, Э. М.; ПИНСКЕР, Т. Н.; СТАРИКОВ, М. Н., Энергетический Спектор Глубогих Состояний в Щели Подвижности, ФТП,, Т., В.,. - CONWAY, N.M.J.; LLIE, A.; ROBERTSON, J.; MILNE, W.I., Redution in Defet Density By Annealing In Hydrogenated Tetrahedral Amorphous Carbon, App. Phys. Let., Vol., N.,, -. - MEREY, W.; NELDEL, R., A Relation Between The Energy Constant G And The Quantity Constant a In The Condutivity-Temperature Formula On Oxide Semiondutors, Z. Teh. phys., V.,,. ٤٠

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