TLCW5100. Ultrabright White LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors
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1 Ultrabright White LED, 5 mm Untinted Non-Diffused Description The series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted plastic case utilize the highly developed ultrabright InGaN technologies. The lens and the viewing angle is optimized to achieve best performance of light output and visibility. Features Untinted non diffused lens e2 Pb Pb-free Utilizing ultrabright InGaN technology High luminous intensity Luminous intensity and color categorized for each packing unit ESD-withstand voltage: 1 kv for InGaN Lead-free device Applications Interior and exterior lighting Outdoor LED panels Instrumentation and front panel indicators Replaces incandescent lamps Light guide design Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology White, I V = 4 mcd (typ.) 9 InGaN / TAG on SiC Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Reverse voltage V R 5 V DC forward current T amb 6 C I F 3 ma Surge forward current t p 1 µs I FSM.1 A Power dissipation T amb 6 C P V 135 mw Junction temperature T j C Operating temperature range T amb - 4 to + C Storage temperature range T stg - 4 to + C Soldering temperature t 5 s T sd 26 C Thermal resistance junction/ ambient R thja 3 K/W 1
2 Optical and Electrical Characteristics T amb = 25 C, unless otherwise specified White Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity I F = 3 ma I V 4 mcd Chromaticity coordinate x acc. I F = 3 ma x.33 to CIE 1931 Chromaticity coordinate y acc. I F = 3 ma y.33 to CIE 1931 Angle of half intensity I F = 3 ma ϕ ± 9 deg Forward voltage I F = 3 ma V F V Reverse voltage I R = 1 µa V R 5 V Temperature coefficient I F = 3 ma TC VF - 4 mv/k of V F Temperature coefficient of I V I F = 3 ma TC IV -.5 % / K Chromaticity Coordinate Classification Group X Y min max min max 3a Y = 1.4x Y = 1.4x b Y = 1.4x Y = 1.4x c Y = 1.4x Y = 1.4x d Y = 1.4x Y = 1.4x a Y = 1.4x Y = 1.4x b Y = 1.4x Y = 1.4x c Y = 1.4x Y = 1.4x d Y = 1.4x Y = 1.4x a Y = 1.4x Y = 1.4x b Y = 1.4x Y = 1.4x c Y = 1.4x Y = 1.4x d Y = 1.4x Y = 1.4x tolerance ±.5 2
3 Typical Characteristics (T amb = 25 C unless otherwise specified) P V Power Dissipation (mw) T amb Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature I F - Forward Current ( ma ) V F - Forward Voltage (V) Figure 4. Forward Current vs. Forward Voltage I - Forward Current ( ma ) F T amb Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature I V rel - Relative Luminous Intensity λ - Wavelength ( nm ) Figure 5. Relative Intensity vs. Wavelength I V rel - Relative Luminous Flux White I F - Forward Current ( ma ) Figure 3. Relative Luminous Flux vs. Forward Current I Relative Luminous Intensity Vrel T amb Ambient Temperature ( C ) Figure 6. Relative Luminous Intensity vs. Amb. Temperature 3
4 V Change of Forward Voltage (mv) F ma 3 ma 2 ma T amb Ambient Temperature ( C ) S rel - Relative Sensitivity Figure 7. Change of Forward Voltage vs. Ambient Temperature Figure 1. Relative Radiant Sensitivity vs. Angular Displacement f - Chromaticity coordinate shift (x,y).345 White.34 X Y I F - Forward Current ( ma ) Figure 8. Chromaticity Coordinate Shift vs. Forward Current Y and Y Coordinates b.38 5a.36 4b 5d.34 4a 3b 5c.32 3a 4d.3 4c.28 3d 3c X Coordinates Figure 9. Coordinates of Colorgroups 4
5 Package Dimensions in mm
6 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 ()
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