arxiv: v2 [cond-mat.str-el] 21 Oct 2017
|
|
- Stephanie Morris
- 5 years ago
- Views:
Transcription
1 Photo-spin voltaic effect and photo-magnetoresistance in proximized platinum D. Li and A. Ruotolo Department of Physics and Materials Science, Centre for Functional Photonics, arxiv: v2 [cond-mat.str-el] 21 Oct 2017 City University of Hong Kong, Kowloon, Hong Kong SAR, China (Dated: September 8, 2018) Abstract Spin orbit coupling in heavy metals allows conversion of unpolarized light into an open-circuit voltage. We experimentally prove that this photo-spin voltaic effect is due to photo-excitation of carriers in the proximized layer and can exist for light in the visible range. While carrying out the experiment, we discovered that, in closed-circuit conditions, the anisotropic magnetoresistance of the proximized metal is a function of the light intensity. We name this effect photomagnetoresistance. A magneto-transport model is presented that describes the change of magnetoresistance as a function of the light intensity. 1
2 Photovoltaic conversion is the result of two concurrent physical processes: photogeneration and separation of carriers. In semiconductors, generation relies on the absorption of a photon with energy larger than the band-gap to transfer an electron from the valence band to the conduction band or a hole from the conduction band to the valence band. Separation of charges with different sign relies on the built-in electric field at a pn interface junction. In spintronics, carriers are discriminated based on their spin angular momentum, rather than their charge. While separation between electrons with spin-up and spin-down can readily be achieved by using inverse spin-hall effect [1], photo-generation of electrons with different populations of spins remains challenging. The spin-galvanic effect can be used to generate an imbalance of spins via absorption of circularly polarized light [2]. Yet, it still makes use of semiconductors and the generated voltage is usually so small to require lock-in techniques to be detected [3]. The recently discovered photo-spin-voltaic effect is unique in that it uses unpolarized light to obtain photo-voltaic conversion in metals [4]. It relies on the excitation of polarized carriers in the proximized layer of a metal with large spin orbit coupling (SOC) in contact with a ferromagnetic insulator, with the separation taking place because of inverse spin-hall effect. In this pioneering experiment conversion was achieved by using infrared light. Moreover, the effect was interpreted based on density functional theory calculations for optical absorption and spin diffusion analysis but no direct experimental evidence was given to support this interpretation. We here show that photo-spin voltaic effect can exist in the visible range. Moreover, we provide a direct experimental evidence of the physical origin of the effect by measuring the anisotropic magnetoresistance (MR) in the same configuration under different light intensities. Our experiment supports the original interpretation of the effect. From a different prospective, we demonstrate that MR in a proximized metal is light-dependent. An analytical model is presented that describes this effect. The system we studied was an yttrium ion garnet Y 3 Fe 5 O 12 /platinum (YIG/Pt) bilayer. A 5-µm thick, single-crystal < 111 >YIG, grown by liquid phase epitaxy on < 111 > gadolinium gallium garnet (GGG) wafer, was purchased. The wafer was diced in samples of size 1 cm 0.5 cm. In order to avoid any possible magnetic contamination or diffusion of Pt into the YIG, pulsed laser deposition at room temperature was used to deposit 3 nm of Pt. The resistivity of the Pt layer was measured to be ρ Pt = Ωm, which 2
3 is the expected resistivity for a ultra-thin Pt film of the same thickness [5]. The dye was wire-bonded to a chip holder and placed in between the poles of an electromagnet. The schematic of the experimental setup is shown in Fig. 1. The magnetic field is always applied along a fixed y-direction and the angle of the light illumination is set along the z-direction. The sample holder can be rotated in the x y plane in such a way that the voltage signal is measured with a nano-voltmeter between the two bonded contacts at an angle θ. The nanovoltmeter was set to operate with a low-pass filter with frequency cut-off f C = 18 Hz to reduce the noise to less than ± 0.05 µv. At first, an infrared laser with diffuser (beam diameter of 1 cm 2 ), as well as an halogen lamp and a long-pass infrared filter, were used to illuminate the sample. The system did not respond to the optical excitation. Rather, infrared light resulted in an increase of the sample temperature and transitory appearance of slow thermal effects associate with a temperature gradient, such as the spin-seebeck effect and Nernst effects [6 9]. All the measurements shown in the following were taken by using an optical fiber illuminator with an as-measured wavelength spectrum covering the entire visible range from λ = 400 nm (violet) to λ = 700 nm (red) (see supplementary materials). In the following, the light intensity is the power at the sample obtained by removing all the filters from the sensor of the power meter and multiplying by the ratio between the sample area and sensor area. We could reproduce all the results reported in Ref. [4], but in our case the system responded to excitation in the visible, rather than infrared, range. In brief, if the YIG was magnetized along the y-axis, an open-circuit voltage of the order of µv was detected along the x-axis (see Fig. 1) when light was shed along the z-axis. The change of voltage was far too sharp for the effect to be thermal. Besides, the voltage magnitude did not change with the temperature, for temperatures as low as 10 K (see supplementary materials). The voltage magnitude was found to be a linear function of the light intensity and to flip its sign if the magnetization was reversed. No signal could be detected if the magnetization was aligned along the x-axis. This means that for an arbitrary angle θ, the x-component of the magnetization vector will not contribute. As a consequence, the voltage magnitude changes with the sine of the angle θ, because so does the component of the magnetization along the y-axis. This behavior is a clear signature that inverse spin-hall effect is the electro-motive force that separates the spin-polarized charges [10]. The open question is why an imbalance of spin exists in the first place, since Pt is a paramagnet and YIG is an insulator. Since the 3
4 same behavior is observed when YIG is replaced by other magnetic insulators [4, 11], one can speculate that it must come from the ferromagnetically proximized layer in the Pt. Providing an experimental evidence to this assumption was the original motivation of our work. If the Pt is thinner than the light penetration depth, then spin-polarized carriers in the proximized layer can be excited to produce a pure spin-current along the z-axis [11]. Light penetration depth is wavelength-dependent: δ = ρλ/πµc, where ρ is the resisitivity of the metal, c is the speed of light in vacuum and µ is the magnetic permeability. In our case, δ = 2.6 nm (resp. 3.5 nm) for λ = 400 nm (resp. 700 nm). Therefore visible light can reach the proximized layer if the thickness of the Pt film is 3 nm. If we compare our results with those in Ref. [4], we conclude that the experiment must be extremely sensitive to thickness and resistivity of Pt. A systematic study of the effect as a function of the Pt thickness requires an accurate control of the film thickness. Besides, for different thicknesses, the system would respond at different wavelengths, and a wavelength-dependent study is at the moment not at reach, given the weak magnitude of the voltage elicited. We can point out here that there is no physical reason why the effect should only exist for infra-red light. Rather, provided that the light can reach the interface, lower wavelengths correspond to higher photon energies and, therefore, higher photo-excitation efficiency. In the proximized layer, an exchange interaction exists between conduction electrons that decays with the distance from the interface. If the light changes spin-population distribution in open-circuit conditions, it should also change the magneto-transport characteristics of the Pt in closed-circuit conditions. Proximized Pt is known to show MR [12 14]. Therefore we measured the MR of the films under different light illumination. We indeed found the anisotropic MR to be light-dependent. Fig. 2 shows the MR of the sample in dark and bright condition with light intensity i = 0.4 W. The sample geometry is the same as that used in open-circuit conditions but a current was injected along the x-axis. The magnetic field was swept along the y-axis. The magnetoresistance ratio was found to be independent on the injected current. A maximum current of 200 µa was injected. This, together with the large size of the sample, excludes contribution from spin-hall megnetoresistance (SMR) [14]. For the following, it is important to understand that the total resistance of the samples was R 2 kω, therefore the R in Fig. 2 corresponds to a magnetoresistance R/R of less than 0.01%, far smaller than the anisotropic MR of a ferromagnetic metal. This means 4
5 that the average magnetic moment induced in the Pt by the proximity with the YIG is much smaller than the magnetic moment of common ferromagnetic metals. By using x-ray magnetic circular dichroism, an average induced magnetic moment of 0.05 µ B (with µ B Bohr magneton) at room temperature has been estimated in a Pt (1.5 nm) film proximized by YIG [13]. In Fig. 3 we plot the maximum change of resistance ( R m ) as a function of the light intensity. R m was found to increase with light intensity. In particular, for low values of the light intensity, R m does not change significantly. A significant increase exists for intermediate intensities, after which R m approaches a limit value. The change of resistance cannot be simply ascribed to the additional photo-induced voltage because the latter is linearly proportional to the light intensity. In the following, a magneto-transport model is presented that well describes the effect. The model is based on the assumption that Pt is proximized in a similar fashion as a normal metal would be in contact with a superconductor [15], with the order parameter being, in this case, the magnetic order (see Fig. 4). The order parameter is in principle suppressed in the ferromagnet over a certain coherence length near the interface. Yet, YIG is known not to experience a significant reduction of the magnetic moment near the surface (dead layer effect [16]), or interface with metals [17]. Therefore, a constant magnetic moment m Y IG can be assumed in the ferromagnet. Instead, the order parameter decays exponentially in the normal metal. The decay constant is the coherence length ξ. Since the anisotropic magnetoresistance is directly dependant on the induced magnetic moment, light must change the magnetic profile, i.e. m and ξ must be a function of i. Under these assumption, the induced magnetic moment in the Pt can be written as: m(z, i) = m(0, i)e z ξ(i) = m0 (i)e z ξ(i) (1) where z is the distance from the interface (z > 0) and i is the light intensity. Unpolarized light cannot polarize charges, which can be expressed as: where the constant k is the area under the curve in Fig. 4. t By replacing eq. 1 in eq. 2, one finds: 0 m(z, i)dz = k i (2) 5
6 t 0 ] m(z, i)dz = m 0 (i)ξ(i) [1 e t ξ(i) = k i (3) Let us notice that m(0, i) = m 0 (i) depends also on the light penetration depth, and therefore on film thickness and wavelength. Yet, in our case, the thickness and the light spectrum are kept constant throughout the experiment. The resistivity of the proximized Pt can be written as [18]: ρ(z, i) = ρ 0 + ρ m (z, i) cos 2 θ (4) where θ is the angle between the directions of the current and magnetization. The maximum change of resistivity ρ m depends on the magnetic order, i.e. it is a monotonic function of the magnetic moment, ρ m = g(m), and satisfies the conditions: δg/δm > 0 (it increases with magnetic moment) & g(m = 0) = 0 (non-magnetic metals do not show anisotropic magnetoresistance). If the induced average magnetic moment < m(z, i) > is small as compared to that of a ferromagnetic metal, which is certainly the case for Pt, one can assume, as a first approximation, a liner relationship between ρ m and m, ρ m = g(m) αm with α the constant of proportionality: ρ m (z, i) = αm(z, i) = αm 0 (i)e z ξ(i) (5) A layer of length l, width w and infinitesimal thickness dz will offer a maximum change of resistance d R m : d R m (z, i) = ρ m (z, i) l 1 w dz = αm 0(i)e The current is conducted in parallel in the Pt layers of infinitesimal thickness dz, therefore the total change of conductance G m (i) must be the sum of the changes of conductance in the layers of infinitesimal thickness dz: d G m (z, i) = 1 d R m (z, i) = z e ξ(i) αm 0 (i) z ξ(i) l w 1 dz (6) w dz (7) l G m (i) = t 0 e z ξ(i) w αm 0 (i) l dz = ξ(i) w ] [e t ξ(i) 1 αm 0 (i) l The maximum change of resistance as a function of the light intensity is therefore: (8) 6
7 R m (i) = αm [ ] 0(i) l 1 ξ(i) w e t ξ(i) 1 By normalizing to the maximum change of resistance in the dark: ] R m (i) R m (0) = αm 0(i) ξ(0) [e t ξ(0) 1 ξ(i) αm 0 (0) e t ξ(i) 1 (9) (10) and using the condition in eq. 3: R m (i) R m (0) = ξ2 (0) cosh(t/ξ(0)) 1 ξ 2 (i) cosh(t/ξ(i)) 1 (11) Indeed, the function y(ω) = (1/ω 2 )(1/(cosh(1/ω) 1)), plotted in Fig. 5, is qualitatively in good agreement with the trend in our experimental data in Fig. 3. A quantitative fit required an heuristic determination of the function ξ = ξ(i). Polynomial and logarithmic functions resulted in a poor fit. The experimental data were instead well-fitted by assuming ξ(i) = ξ(0) + κe ι/i. The best fit in Fig. 3, was achieved with ξ(0) = 0.49 nm, κ = 10.0 nm and ι = 1.08 W. The inset in Fig. 5 shows the function ξ = ξ(i) for the same values of the parameters. Assuming an average moment in dark conditions < m(z, 0) >= 0.05 µ B [13] and using eq. 3, we estimated a moment at the interface m 0 (0) = 0.15 µ B. For the maximum value of the intensity in our experiment, ξ reaches the thickness of the film, after which our model will no longer be valid. Clearly the simple model we have presented here is very limited in the conditions and could not be applicable for ultra-thin films (thickness < 1 nm). Yet, it is very effective in fitting our data because, according to eq. 3, with ξ increasing with intensity, the magnetic moment decreases much faster. The model is meant to inspire further theoretical studies on the ferromagnetic proximity effect. In conclusion, we were able to experimentally prove that photo-spin voltaic effect is due to excitation of polarized carriers in the proximized layer of the metallic film. We also proved that the effect is observable when the light source is in the visible spectrum. In closedcircuit conditions, the proximized metal offers an anisotropic magnetoresistance that is light dependent. This photo-magnetoresistive effect could be well described by a simple magnetotransport model. By fitting the experimental data with the derived model we were able to estimate the the thickness of the proximized layer. An increase of the moment induced in the proximized layer, for instance by using < 100 >YIG [19], and the use of materials with 7
8 stronger spin-orbit coupling, such as topological insulators, could lead to optically-tunable magnetic sensors. SUPPLEMENTARY MATERIAL See supplementary materials for the measured spectrum of the light source used in the experiment and for the measurements of spin-voltaic effect at low temperature. ACKNOWLEDGMENT This study was funded by the Science, Technology and Innovation Commission of Shenzhen Municipality (Project no. JCYJ ) and by the City University of Hong Kong (Project no. CityU ). [1] E. Saitoh, M. Ueda, H. Miyajima, and G. Tatara, App. Phys. Lett. 88, (2006). [2] S. D. Ganichev, E. L. Ivchenko, V. V. Bel kov, S. A. Tarasenko, M. Sollinger, D. Weiss, W. Wegscheider, and W. Prettl, Nature 417 (2002). [3] K. Ando, M. Morikawa, T. Trypiniotis, Y. Fujikawa, C. H. W. Barnes, and E. Saitoh, App. Phys. Lett. 96, (2010). [4] D. Ellsworth, L. Lu, J. Lan, H. Chang, P. Li, Z. Wang, J. Hu, B. Johnson, Y. Bian, J. Xiao, R. Wu, and M. Wu, Nat. Phys. 12, 861 (2016). [5] M. Avrekh, O. Monteiro, and I. Brown, Appl. Surf. Sci. 158, 217 (2000). [6] K. Uchida, S. Takahashi, K. Harii, J. Ieda, W. Koshibae, K. Ando, S. Maekawa, and E. Saitoh, Nature 455, 778 (2008). [7] K. Uchida, M. Ishida, T. Kikkawa, A. Kirihara, T. Murakami, and E. Saitoh, J. Phys.: Cond. Mat. 26, (2014). [8] S. Y. Huang, W. G. Wang, S. F. Lee, J. Kwo, and C. L. Chien, Phys. Rev. Lett. 107, (2011). [9] A. D. Avery, M. R. Pufall, and B. L. Zink, Phys. Rev. Lett. 109, (2012). 8
9 [10] A. Hoffmann, IEEE Trans. Magn. 49, 5172 (2013). [11] P. Li, D. Ellsworth, H. Chang, P. Janantha, D. Richardson, F. Shah, P. Phillips, T. Vijayasarathy, and M. Wu, App. Phys. Lett. 105, (2014). [12] S. Y. Huang, X. Fan, D. Qu, Y. P. Chen, W. G. Wang, J. Wu, T. Y. Chen, J. Q. Xiao, and C. L. Chien, Phys. Rev. Lett. 109, (2012). [13] Y. M. Lu, Y. Choi, C. M. Ortega, X. M. Cheng, J. W. Cai, S. Y. Huang, L. Sun, and C. L. Chien, Phys. Rev. Lett. 110, (2013). [14] H. Nakayama, M. Althammer, Y.-T. Chen, K. Uchida, Y. Kajiwara, D. Kikuchi, T. Ohtani, S. Geprägs, M. Opel, S. Takahashi, R. Gross, G. E. W. Bauer, S. T. B. Goennenwein, and E. Saitoh, Phys. Rev. Lett. 110, (2013). [15] P. G. De Gennes, Rev. Mod. Phys. 36, 225 (1964). [16] A. Ruotolo, A. Oropallo, F. M. Granozio, G. P. Pepe, P. Perna, and U. S. di Uccio, App. Phys. Lett. 88, (2006). [17] M. Niyaifar, H. Mohammadpour, M. Dorafshani, and A. Hasanpour, J. Magn. Magn. Mater. 409, 104 (2016). [18] A. Fert and L. Piraux, J. Magn. Magn. Mater. 200, 338 (1999). [19] X. Liang, Y. Zhu, B. Peng, L. Deng, J. Xie, H. Lu, M. Wu, and L. Bi, ACS App. Mater. Inter. 8, 8175 (2016). 9
10 FIG. 1. Photo-spin voltaic effect under visible light illumination. The inset shows the measurement configuration. 10
11 FIG. 2. Magnetoresistance for different light illumination. 11
12 R m / R m (0) i (W) FIG. 3. Maximum change of resistance as a function of light intensity. The line is the best fit with Eq
13 FIG. 4. Schematic representation of magnetic proximity effect in YIG/Pt biayers. 13
14 FIG. 5. Calculated trend for magnetoresistance vs light intensity. Inset shows the spin depth as a function of light intensity that gives the best fit of the experimental data. 14
Heat-driven spin transport in a ferromagnetic metal. and Jing Shi Department of Physics & Astronomy, University of California, Riverside, CA
Heat-driven spin transport in a ferromagnetic metal Yadong Xu 1, Bowen Yang 1, Chi Tang 1, Zilong Jiang 1, Michael Schneider 2, Renu Whig 2, and Jing Shi 1 1. Department of Physics & Astronomy, University
More information4.5 YIG thickness dependence of the spin-pumping effect in YIG/Pt heterostructures
4.5 YIG thickness dependence of the spin-pumping effect in YIG/Pt heterostructures V. Lauer, M. B. Jungßeisch, A. V. Chumak, and B. Hillebrands In collaboration with: A. Kehlberger and M. Kläui, Institute
More informationarxiv: v1 [cond-mat.mtrl-sci] 2 Dec 2015
Non-equilibrium thermodynamics of the longitudinal spin Seebeck effect Vittorio Basso, Elena Ferraro, Alessandro Magni, Alessandro Sola, Michaela Kuepferling and Massimo Pasquale arxiv:1512.00639v1 [cond-mat.mtrl-sci]
More informationObservation of the intrinsic inverse spin Hall effect in Ni 80 Fe 20. Yuichiro Ando, Teruya Shinjo and Masashi Shiraishi * #
Observation of the intrinsic inverse spin Hall effect in Ni 80 Fe 20 Ayaka Tsukahara #, Yuta Kitamura #, Eiji Shikoh, Yuichiro Ando, Teruya Shinjo and Masashi Shiraishi * # Graduate School of Engineering
More informationSpin Current and Spin Seebeck Effect
at Rome, Italy (September 18, 2013) Spin Current and Spin Seebeck Effect Sadamichi Maekawa Advanced Science Research Center (ASRC), Japan Atomic Energy Agency (JAEA) at Tokai and CREST-JST. Co-workers:
More informationObservation of the intrinsic inverse spin Hall effect from ferromagnet
Observation of the intrinsic inverse spin Hall effect from ferromagnet Ayaka Tsukahara #, Yuta Kitamura #, Eiji Shikoh, Yuichiro Ando, Teruya Shinjo and Masashi Shiraishi * # Graduate School of Engineering
More informationElectrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface
Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface Weiwei Lin 1, * and C. L. Chien 1, Department of Physics and Astronomy, Johns Hopkins University, Baltimore,
More informationOptical studies of current-induced magnetization
Optical studies of current-induced magnetization Virginia (Gina) Lorenz Department of Physics, University of Illinois at Urbana-Champaign PHYS403, December 5, 2017 The scaling of electronics John Bardeen,
More information0.002 ( ) R xy
a b z 0.002 x H y R xy () 0.000-0.002 0 90 180 270 360 (degree) Supplementary Figure 1. Planar Hall effect resistance as a function of the angle of an in-plane field. a, Schematic of the planar Hall resistance
More informationMagnon, Spinon and Phonon in spin caloritronics
Magnon, Spinon and Phonon in spin caloritronics Institute of materials research, Tohoku University, Japan WPI-AIMR Tohoku Univ., ASRC JAEA, ERATO - SQR, JST, Japan Eiji SATIOH Contents 1. Introduction
More informationTRANSVERSE SPIN TRANSPORT IN GRAPHENE
International Journal of Modern Physics B Vol. 23, Nos. 12 & 13 (2009) 2641 2646 World Scientific Publishing Company TRANSVERSE SPIN TRANSPORT IN GRAPHENE TARIQ M. G. MOHIUDDIN, A. A. ZHUKOV, D. C. ELIAS,
More informationmagnetic anisotropy University of California, Riverside, CA 92521, USA
Anomalous Hall hysteresis in Tm 3 Fe 5 O 12 /Pt with strain-induced perpendicular magnetic anisotropy Chi Tang 1, Pathikumar Sellappan 2, Yawen Liu 1, Yadong Xu 1, Javier E. Garay 2, and Jing Shi 1 1 Department
More informationUniversity of Groningen
University of Groningen Exchange magnetic field torues in YIG/Pt bilayers observed by the spin-hall magnetoresistance Vlietstra,.; Shan, J.; Castel, V.; Ben Youssef, J.; Bauer, G. E. W.; van Wees, Bart
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2014.16 Electrical detection of charge current-induced spin polarization due to spin-momentum locking in Bi 2 Se 3 by C.H. Li, O.M.J. van t Erve, J.T. Robinson,
More informationCurrent-driven Magnetization Reversal in a Ferromagnetic Semiconductor. (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction D. Chiba 1, 2*, Y. Sato 1, T. Kita 2, 1, F. Matsukura 1, 2, and H. Ohno 1, 2 1 Laboratory
More informationSpin Funneling for Enhanced Spin Injection into Ferromagnets: Supplementary Information
Spin Funneling for Enhanced Spin Injection into Ferromagnets: Supplementary Information Shehrin Sayed, Vinh Q. Diep, Kerem Yunus Camsari, and Supriyo Datta School of Electrical and Computer Engineering,
More informationAdvanced Lab Course. Tunneling Magneto Resistance
Advanced Lab Course Tunneling Magneto Resistance M06 As of: 015-04-01 Aim: Measurement of tunneling magnetoresistance for different sample sizes and recording the TMR in dependency on the voltage. Content
More informationSpin Peltier Effect: Controlling Heat Through Electron Spins
Physics Focus Bulletin Spin Peltier Effect: Controlling Heat Through Electron Spins Ken-ichi Uchida National Institute for Materials Science Interaction between spin and heat currents is actively studied
More informationLong distance transport of magnon spin information in a magnetic insulator at room temperature
Long distance transport of magnon spin information in a magnetic insulator at room temperature L.J. Cornelissen 1 *, J.Liu 1, R.A. Duine 2, J. Ben Youssef 3 & B. J. van Wees 1 1 Zernike Institute for Advanced
More informationMagneto-Seebeck effect in spin-valve with in-plane thermal gradient
Magneto-Seebeck effect in spin-valve with in-plane thermal gradient S. Jain 1, a), D. D. Lam 2, b), A. Bose 1, c), H. Sharma 3, d), V. R. Palkar 1, e), C. V. Tomy 3, f), Y. Suzuki 2, g) 1, h) and A. A.
More informationNonlocal electrical detection of spin accumulation. generated by Anomalous Hall effects in mesoscopic. Ni 81 Fe 19 films
Nonlocal electrical detection of spin accumulation generated by Anomalous Hall effects in mesoscopic Ni 81 Fe 19 films Chuan Qin, Shuhan Chen, * Yunjiao Cai, Fatih Kandaz, and Yi Ji Department of Physics
More informationJoule Heating Induced Spin Seebeck Effect
Bachelor Thesis Joule Heating Induced Spin Seebeck Effect Erich Dobler Date: 23 August 213 Contents 1 Introduction 1 2 The Spin Seebeck Effect 2 2.1 Spin Currents.................................. 2 2.2
More informationarxiv: v1 [cond-mat.mtrl-sci] 24 Dec 2016
Concomitant enhancement of longitudinal spin Seebeck effect with thermal conductivity Ryo Iguchi, 1, Ken-ichi Uchida, 1, 2, 3, 4 Shunsuke Daimon, 1, 5 1, 4, 5, 6 and Eiji Saitoh 1 Institute for Materials
More informationMAGNETORESISTIVITY OF COBALT-PTFE GRANULAR COMPOSITE FILM PRODUCED BY PULSED LASER DEPOSITION TECHNIQUE
Magnetoresistivity Rev.Adv.Mater.Sci. of 15(2007) cobalt-ptfe 215-219 granular composite film produced by pulsed laser... 215 MAGNETORESISTIVITY OF COBALT-PTFE GRANULAR COMPOSITE FILM PRODUCED BY PULSED
More informationTemperature dependence of spin diffusion length in silicon by Hanle-type spin. precession
Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession T. Sasaki 1,a), T. Oikawa 1, T. Suzuki 2, M. Shiraishi 3, Y. Suzuki 3, and K. Noguchi 1 SQ Research Center, TDK
More informationTHE UNIVERSITY OF NEW SOUTH WALES SCHOOL OF PHYSICS FINAL EXAMINATION JUNE/JULY PHYS3080 Solid State Physics
THE UNIVERSITY OF NEW SOUTH WALES SCHOOL OF PHYSICS FINAL EXAMINATION JUNE/JULY 006 PHYS3080 Solid State Physics Time Allowed hours Total number of questions - 5 Answer ALL questions All questions are
More informationA spin Esaki diode. Makoto Kohda, Yuzo Ohno, Koji Takamura, Fumihiro Matsukura, and Hideo Ohno. Abstract
A spin Esaki diode Makoto Kohda, Yuzo Ohno, Koji Takamura, Fumihiro Matsukura, and Hideo Ohno Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University,
More informationarxiv: v3 [cond-mat.mes-hall] 10 Nov 2018
Longitudinal spin Seebeck coefficient: heat flux vs. temperature difference method A. Sola 1,*, P. Bougiatioti 2, M. Kuepferling 1, D. Meier 2, G. Reiss 2, M. Pasquale 1, T. Kuschel 2,3, and V. Basso 1
More informationMagnetoresistance due to Domain Walls in Micron Scale Fe Wires. with Stripe Domains arxiv:cond-mat/ v1 [cond-mat.mes-hall] 9 Mar 1998.
Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains arxiv:cond-mat/9803101v1 [cond-mat.mes-hall] 9 Mar 1998 A. D. Kent a, U. Ruediger a, J. Yu a, S. Zhang a, P. M. Levy a
More informationFerromagnetism and Anomalous Hall Effect in Graphene
Ferromagnetism and Anomalous Hall Effect in Graphene Jing Shi Department of Physics & Astronomy, University of California, Riverside Graphene/YIG Introduction Outline Proximity induced ferromagnetism Quantized
More informationProgress In Electromagnetics Research B, Vol. 1, , 2008
Progress In Electromagnetics Research B Vol. 1 09 18 008 DIFFRACTION EFFICIENCY ENHANCEMENT OF GUIDED OPTICAL WAVES BY MAGNETOSTATIC FORWARD VOLUME WAVES IN THE YTTRIUM-IRON-GARNET WAVEGUIDE COATED WITH
More informationVisualization of Anomalous Ettingshausen Effect in a Ferromagnetic Film: Direct Evidence of Different Symmetry from Spin Peltier Effect
Visualization of Anomalous Ettingshausen Effect in a Ferromagnetic Film: Direct Evidence of Different Symmetry from Spin Peltier Effect T. Seki, 1,2,* R. Iguchi, 3 K. Takanashi, 1,2 and K. Uchida 2,3,4,
More informationPhoto-spin-voltaic effect
DOI: 1.138/NPHYS3738 Photo-spin-voltaic effect David Ellsworth 1, Lei Lu 1, Jin Lan,3, Houchen Chang 1, Peng Li 1, Zhe Wang 3, Jun Hu, Bryan Johnson 1, Yuqi Bian 1, Jiang Xiao 3,, Ruqian Wu,3, and Mingzhong
More informationEfficient spin transport in a paramagnetic insulator
Efficient spin transport in a paramagnetic insulator Koichi Oyanagi 1, Saburo Takahashi 1,2,3, Ludo J. Cornelissen 4, Juan Shan 4, Shunsuke Daimon 1,2,5, Takashi Kikkawa 1,2, Gerrit E. W. Bauer 1,2,3,4,
More informationSUPPLEMENTARY INFORMATION
Supplementary Information: Photocurrent generation in semiconducting and metallic carbon nanotubes Maria Barkelid 1*, Val Zwiller 1 1 Kavli Institute of Nanoscience, Delft University of Technology, Delft,
More informationAll-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes.
All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes. M. Ehlert 1, C. Song 1,2, M. Ciorga 1,*, M. Utz 1, D. Schuh 1, D. Bougeard 1, and D. Weiss 1 1 Institute of Experimental
More informationSpintronics at Nanoscale
Colloquium@NTHU Sep 22, 2004 Spintronics at Nanoscale Hsiu-Hau Lin Nat l Tsing-Hua Univ & Nat l Center for Theoretical Sciences What I have been doing Spintronics: Green s function theory for diluted magnetic
More informationSelf-induced inverse spin Hall effect in permalloy at room temperature
Self-induced inverse spin Hall effect in permalloy at room temperature Ayaka Tsukahara #,1, Yuichiro Ando #,1,2, Yuta Kitamura #,1, Hiroyuki Emoto 1, Eiji Shikoh 1,$, Michael P. Delmo 1,&, Teruya Shinjo
More information4.7 Detection of magnon spin transport by spin pumping and inverse spin Hall effect
4.7 Detection of magnon spin transport by spin pumping and inverse spin Hall effect M. B. Jungßeisch, A. V. Chumak, A. A. Serga, R. Neb, and B. Hillebrands In collaboration with: D. A. Bozhko, Faculty
More informationMaterial Science II. d Electron systems
Material Science II. d Electron systems 1. Electronic structure of transition-metal ions (May 23) 2. Crystal structure and band structure (June 13) 3. Mott s (June 20) 4. Metal- transition (June 27) 5.
More informationFocused-ion-beam milling based nanostencil mask fabrication for spin transfer torque studies. Güntherodt
Focused-ion-beam milling based nanostencil mask fabrication for spin transfer torque studies B. Özyilmaz a, G. Richter, N. Müsgens, M. Fraune, M. Hawraneck, B. Beschoten b, and G. Güntherodt Physikalisches
More informationTheoretical Study on Graphene Silicon Heterojunction Solar Cell
Copyright 2015 American Scientific Publishers All rights reserved Printed in the United States of America Journal of Nanoelectronics and Optoelectronics Vol. 10, 1 5, 2015 Theoretical Study on Graphene
More informationPlanar Hall Effect in Magnetite (100) Films
Planar Hall Effect in Magnetite (100) Films Xuesong Jin, Rafael Ramos*, Y. Zhou, C. McEvoy and I.V. Shvets SFI Nanoscience Laboratories, School of Physics, Trinity College Dublin, Dublin 2, Ireland 1 Abstract.
More informationRoom-Temperature Electron Spin Transport in a Highly Doped Si Channel. AIT, Akita Research Institute of Advanced Technology, Akita , Japan
Room-Temperature Electron Spin Transport in a Highly Doped Si Channel Toshio Suzuki*, Tomoyuki Sasaki 1, Tohru Oikawa 1, Masashi Shiraishi, Yoshishige Suzuki, and Kiyoshi Noguchi 1 AIT, Akita Research
More informationSpatiotemporal magnetic imaging at the nanometer and picosecond scales
AFOSR Nanoelectronics Review, Oct. 24, 2016 Spatiotemporal magnetic imaging at the nanometer and picosecond scales Gregory D. Fuchs School of Applied & Engineering Physics, Cornell University T M V TRANE
More informationSupplementary Figure 1 Schematics of an optical pulse in a nonlinear medium. A Gaussian optical pulse propagates along z-axis in a nonlinear medium
Supplementary Figure 1 Schematics of an optical pulse in a nonlinear medium. A Gaussian optical pulse propagates along z-axis in a nonlinear medium with thickness L. Supplementary Figure Measurement of
More informationHidden Interfaces and High-Temperature Magnetism in Intrinsic Topological Insulator - Ferromagnetic Insulator Heterostructures
Hidden Interfaces and High-Temperature Magnetism in Intrinsic Topological Insulator - Ferromagnetic Insulator Heterostructures Valeria Lauter Quantum Condensed Matter Division, Oak Ridge National Laboratory,
More informationEE 446/646 Photovoltaic Devices I. Y. Baghzouz
EE 446/646 Photovoltaic Devices I Y. Baghzouz What is Photovoltaics? First used in about 1890, the word has two parts: photo, derived from the Greek word for light, volt, relating to electricity pioneer
More informationDepartment of Electrical Engineering and Information Systems, Tanaka-Ohya lab.
Observation of the room-temperature local ferromagnetism and its nanoscale expansion in the ferromagnetic semiconductor Ge 1 xfe x Yuki K. Wakabayashi 1 and Yukio Takahashi 2 1 Department of Electrical
More informationMaking the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials
Making the Invisible Visible: Probing Antiferromagnetic Order in Novel Materials Elke Arenholz Lawrence Berkeley National Laboratory Antiferromagnetic contrast in X-ray absorption Ni in NiO Neel Temperature
More informationMesoscopic Spintronics
Mesoscopic Spintronics Taro WAKAMURA (Université Paris-Sud) Lecture 2 Today s Topics 2.1 Anomalous Hall effect and spin Hall effect 2.2 Spin Hall effect measurements 2.3 Interface effects Anomalous Hall
More informationGraphene photodetectors with ultra-broadband and high responsivity at room temperature
SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2014.31 Graphene photodetectors with ultra-broadband and high responsivity at room temperature Chang-Hua Liu 1, You-Chia Chang 2, Ted Norris 1.2* and Zhaohui
More informationSupplementary figures
Supplementary figures Supplementary Figure 1. A, Schematic of a Au/SRO113/SRO214 junction. A 15-nm thick SRO113 layer was etched along with 30-nm thick SRO214 substrate layer. To isolate the top Au electrodes
More informationSupplementary material for High responsivity mid-infrared graphene detectors with antenna-enhanced photo-carrier generation and collection
Supplementary material for High responsivity mid-infrared graphene detectors with antenna-enhanced photo-carrier generation and collection Yu Yao 1, Raji Shankar 1, Patrick Rauter 1, Yi Song 2, Jing Kong
More informationSpin-Hall-Active Platinum Thin Films Grown Via. Atomic Layer Deposition
Spin-Hall-Active Platinum Thin Films Grown Via arxiv:1801.04041v1 [cond-mat.mes-hall] 12 Jan 2018 Atomic Layer Deposition Richard Schlitz,,, Akinwumi Abimbola Amusan, Michaela Lammel,, Stefanie Schlicht,
More informationMesoscopic Spintronics
Mesoscopic Spintronics Taro WAKAMURA (Université Paris-Sud) Lecture 5 Today s Topics 5.1 Spincaloritronics 5.2 Domain walls and skyrmions Spin Caloritronics Basics of thermoelectric effects The gradient
More informationarxiv: v1 [cond-mat.mes-hall] 26 Feb 2018
Spin Seebeck effect and ballistic transport of quasi-acoustic magnons in room-temperature yttrium iron garnet films arxiv:1802.09593v1 [cond-mat.mes-hall] 26 Feb 2018 Timo Noack 1, Halyna Yu. Musiienko-Shmarova
More informationSimple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures
Presented at ISCS21 June 4, 21 Session # FrP3 Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures Hideo
More informationSemiconductor Physics and Devices
The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation
More informationCover Page. The handle holds various files of this Leiden University dissertation
Cover Page The handle http://hdl.handle.net/1887/24306 holds various files of this Leiden University dissertation Author: Verhagen, T.G.A. Title: Magnetism and magnetization dynamics in thin film ferromagnets
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm
More information(002)(110) (004)(220) (222) (112) (211) (202) (200) * * 2θ (degree)
Supplementary Figures. (002)(110) Tetragonal I4/mcm Intensity (a.u) (004)(220) 10 (112) (211) (202) 20 Supplementary Figure 1. X-ray diffraction (XRD) pattern of the sample. The XRD characterization indicates
More informationAnisotropic magnetothermoelectric power of ferromagnetic thin films
Chapter 6 Anisotropic magnetothermoelectric power of ferromagnetic thin films We discuss measurements of the magnetothermoelectric power (MTEP) in metallic ferromagnetic films of Ni 80 Fe 20 (Permalloy;
More informationX-Ray Spectro-Microscopy Joachim Stöhr Stanford Synchrotron Radiation Laboratory
X-Ray Spectro-Microscopy Joachim Stöhr Stanford Synchrotron Radiation Laboratory X-Rays have come a long way Application to Magnetic Systems 1 µm 1895 1993 2003 http://www-ssrl.slac.stanford.edu/stohr/index.htm
More informationInvestigation of Magnetoresistance Tuned by Interface States of YIG/Pt Heterostructures
Technische Universität München Fakultät für Physik Walther-Meiÿner- Institut für Tieftemperaturforschung Master's Thesis Abschlussarbeit im Masterstudiengang Physik Investigation of Magnetoresistance Tuned
More informationPhotovoltaic Enhancement Due to Surface-Plasmon Assisted Visible-Light. Absorption at the Inartificial Surface of Lead Zirconate-Titanate Film
Photovoltaic Enhancement Due to Surface-Plasmon Assisted Visible-Light Absorption at the Inartificial Surface of Lead Zirconate-Titanate Film Fengang Zheng, a,b, * Peng Zhang, a Xiaofeng Wang, a Wen Huang,
More informationTrajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator
Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator J. G. Checkelsky, 1, R. Yoshimi, 1 A. Tsukazaki, 2 K. S. Takahashi, 3 Y. Kozuka, 1 J. Falson,
More informationCurrent-induced switching in a magnetic insulator
In the format provided by the authors and unedited. DOI: 10.1038/NMAT4812 Current-induced switching in a magnetic insulator Can Onur Avci, Andy Quindeau, Chi-Feng Pai 1, Maxwell Mann, Lucas Caretta, Astera
More informationMesoscopic Spintronics
Mesoscopic Spintronics Taro WAKAMURA (Université Paris-Sud) Lecture 1 Today s Topics 1.1 History of Spintronics 1.2 Fudamentals in Spintronics Spin-dependent transport GMR and TMR effect Spin injection
More informationMagnetic recording technology
Magnetic recording technology The grain (particle) can be described as a single macrospin μ = Σ i μ i 1 0 1 0 1 W~500nm 1 bit = 300 grains All spins in the grain are ferromagnetically aligned B~50nm Exchange
More informationPHYSICS nd TERM Outline Notes (continued)
PHYSICS 2800 2 nd TERM Outline Notes (continued) Section 6. Optical Properties (see also textbook, chapter 15) This section will be concerned with how electromagnetic radiation (visible light, in particular)
More informationRecent developments in spintronic
Recent developments in spintronic Tomas Jungwirth nstitute of Physics ASCR, Prague University of Nottingham in collaboration with Hitachi Cambridge, University of Texas, Texas A&M University - Spintronics
More informationSupplementary material: Nature Nanotechnology NNANO D
Supplementary material: Nature Nanotechnology NNANO-06070281D Coercivities of the Co and Ni layers in the nanowire spin valves In the tri-layered structures used in this work, it is unfortunately not possible
More informationLecture 12. Semiconductor Detectors - Photodetectors
Lecture 12 Semiconductor Detectors - Photodetectors Principle of the pn junction photodiode Absorption coefficient and photodiode materials Properties of semiconductor detectors The pin photodiodes Avalanche
More informationElectric power transfer in spin pumping experiments
Electric power transfer in spin pumping experiments K. Rogdakis 1, N. Alfert 1, A. Srivastava 2, J.W.A. Robinson 2, M. G. Blamire 2, L. F. Cohen 3, and H. Kurebayashi 1,a) 1 London Centre for Nanotechnology,
More informationPhysics of Semiconductors (Problems for report)
Physics of Semiconductors (Problems for report) Shingo Katsumoto Institute for Solid State Physics, University of Tokyo July, 0 Choose two from the following eight problems and solve them. I. Fundamentals
More informationChannel Optical Waveguides with Spatial Longitudinal Modulation of Their Parameters Induced in Photorefractive Lithium Niobate Samples
Russian Forum of Young Scientists Volume 2018 Conference Paper Channel Optical Waveguides with Spatial Longitudinal Modulation of Their Parameters Induced in Photorefractive Lithium Niobate Samples A D
More informationUNIT - IV SEMICONDUCTORS AND MAGNETIC MATERIALS
1. What is intrinsic If a semiconductor is sufficiently pure, then it is known as intrinsic semiconductor. ex:: pure Ge, pure Si 2. Mention the expression for intrinsic carrier concentration of intrinsic
More informationOptical and Photonic Glasses. Lecture 30. Femtosecond Laser Irradiation and Acoustooptic. Professor Rui Almeida
Optical and Photonic Glasses : Femtosecond Laser Irradiation and Acoustooptic Effects Professor Rui Almeida International Materials Institute For New Functionality in Glass Lehigh University Femto second
More informationControlled enhancement of spin current emission by three-magnon splitting
Controlled enhancement of spin current emission by three-magnon splitting Hidekazu Kurebayashi* 1, Oleksandr Dzyapko 2, Vlad E. Demidov 2, Dong Fang 1, Andrew J. Ferguson 1 and Sergej O. Demokritov 2 1
More informationSupplementary Figure 1. Supplementary Figure 1 Characterization of another locally gated PN junction based on boron
Supplementary Figure 1 Supplementary Figure 1 Characterization of another locally gated PN junction based on boron nitride and few-layer black phosphorus (device S1). (a) Optical micrograph of device S1.
More informationUnit IV Semiconductors Engineering Physics
Introduction A semiconductor is a material that has a resistivity lies between that of a conductor and an insulator. The conductivity of a semiconductor material can be varied under an external electrical
More informationSpin Seebeck insulator
Spin Seebeck insulator K. Uchida 1, J. Xiao 2,3, H. Adachi 4,5, J. Ohe 4,5, S. Takahashi 1,5, J. Ieda 4,5, T. Ota 1, Y. Kajiwara 1, H. Umezawa 6, H. Kawai 6, G. E. W. Bauer 3, S. Maekawa 4,5 and E. Saitoh
More informationNano and micro Hall-effect sensors for room-temperature scanning hall probe microscopy
Microelectronic Engineering 73 74 (2004) 524 528 www.elsevier.com/locate/mee Nano and micro Hall-effect sensors for room-temperature scanning hall probe microscopy A. Sandhu a, *, A. Okamoto b, I. Shibasaki
More informationThe fast light of CsI(Na) crystals
CPC (HEP & NP), 2011, xx(x): 1-5 Chinese Physics C Vol. xx, No. X, Xxx, 2011 The fast light of CsI(Na) crystals Xilei Sun 1;1) Junguang Lu 1 Tao Hu 1 Li Zhou 1 Jun Cao 1 Yifang Wang 1 Liang Zhan 1 Boxiang
More informationSUPPLEMENTARY INFORMATION
DOI: 1.138/NNANO.211.214 Control over topological insulator photocurrents with light polarization J.W. McIver*, D. Hsieh*, H. Steinberg, P. Jarillo-Herrero and N. Gedik SI I. Materials and device fabrication
More informationElectronic Properties of Lead Telluride Quantum Wells
Electronic Properties of Lead Telluride Quantum Wells Liza Mulder Smith College 2013 NSF/REU Program Physics Department, University of Notre Dame Advisors: Profs. Jacek Furdyna, Malgorzata Dobrowolska,
More informationThe Electromagnetic Properties of Materials
The Electromagnetic Properties of Materials Electrical conduction Metals Semiconductors Insulators (dielectrics) Superconductors Magnetic materials Ferromagnetic materials Others Photonic Materials (optical)
More informationSUPPLEMENTARY INFORMATION
Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure Yabin Fan, 1,,* Pramey Upadhyaya, 1, Xufeng Kou, 1, Murong Lang, 1 So Takei, 2 Zhenxing
More informationCurrent-driven ferromagnetic resonance, mechanical torques and rotary motion in magnetic nanostructures
Current-driven ferromagnetic resonance, mechanical torques and rotary motion in magnetic nanostructures Alexey A. Kovalev Collaborators: errit E.W. Bauer Arne Brataas Jairo Sinova In the first part of
More informationSUPPLEMENTARY INFORMATION
Supporting online material SUPPLEMENTARY INFORMATION doi: 0.038/nPHYS8 A: Derivation of the measured initial degree of circular polarization. Under steady state conditions, prior to the emission of the
More informationEffect of Proton Irradiation on the Magnetic Properties of Antiferromagnet/ferromagnet Structures
Journal of Magnetics 21(2), 159-163 (2016) ISSN (Print) 1226-1750 ISSN (Online) 2233-6656 http://dx.doi.org/10.4283/jmag.2016.21.2.159 Effect of Proton Irradiation on the Magnetic Properties of Antiferromagnet/ferromagnet
More informationarxiv:cond-mat/ v1 [cond-mat.supr-con] 28 May 2003
arxiv:cond-mat/0305637v1 [cond-mat.supr-con] 28 May 2003 The superconducting state in a single CuO 2 layer: Experimental findings and scenario Rushan Han, Wei Guo School of Physics, Peking University,
More informationUnidirectional spin-wave heat conveyer
Unidirectional spin-wave heat conveyer Figure S1: Calculation of spin-wave modes and their dispersion relations excited in a 0.4 mm-thick and 4 mm-diameter Y 3 Fe 5 O 12 disk. a, Experimentally obtained
More informationSupplementary Figure 1. Magneto-transport characteristics of topological semimetal Cd 3 As 2 microribbon. (a) Measured resistance (R) as a function
Supplementary Figure 1. Magneto-transport characteristics of topological semimetal Cd 3 As 2 microribbon. (a) Measured resistance (R) as a function of temperature (T) at zero magnetic field. (b) Magnetoresistance
More informationLEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
More information(Co-PIs-Mark Brongersma, Yi Cui, Shanhui Fan) Stanford University. GCEP Research Symposium 2013 Stanford, CA October 9, 2013
High-efficiency thin film nano-structured multi-junction solar James S. cells Harris (PI) (Co-PIs-Mark Brongersma, Yi Cui, Shanhui Fan) Stanford University GCEP Research Symposium 2013 Stanford, CA October
More informationStepwise Solution Important Instructions to examiners:
(ISO/IEC - 700-005 Certified) WINTER 0 EXAMINATION Subject Code: 70 Model Answer (Applied Science- Physics) Page No: 0/5 No. Sub. Important Instructions to examiners: ) The answers should be examined by
More informationSUPPLEMENTARY INFORMATION
doi:10.1038/nature12036 We provide in the following additional experimental data and details on our demonstration of an electrically pumped exciton-polariton laser by supplementing optical and electrical
More informationThree-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical. Interconnects
Three-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical eptember 2011 Interconnects Leonid Tsybeskov Department of Electrical and Computer Engineering New Jersey Institute
More information