CVDD materials, sensors and FEE Early Diamond-on-Iridium (DoI) samples Comparison to pc- and sccvdd Summary and Conclusions

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1 Helmholtz Zentrum für Schwerionenforschung HadronPhysics2 Elèni Berdermann, GSI Darmstadt for the NoRHDia and the CARAT Collaborations CVDD materials, sensors and FEE Early Diamond-on-Iridium (DoI) samples Comparison to pc- and sccvdd Summary and Conclusions HadronPhysics

2 CONTRIBUTING PARTICIPANTS NoRHDia & CARAT GSI Detector Laboratory M. Pomorski*, M. Ciobanu M. Traeger, MD. S. Rahman* E. Be Accelerator HF group P. Moritz Target Laboratory S. R. Dunst*, M. Schreck ESRF Grenoble J. Morse, M. Salomé HADES, FOPI, AP, HITRAP, FRS; CBM, R3B, SPARC, SFRS University of Heidelberg R. Lovrincic*, A. Pucci A. Huebner, B. Lommel, et al. Users University of Augsburg University of Karlsruhe S. Mueller, W. de Boer DESY Zeuthen C. Grah, W. Lange, W. Lohmann

3 R&D STATUS STANDARD MATERIALS The world leading diamond industry is Element Six Ltd. (E6), UK Poly-crystalline CVDD = up to 120 mm d = 100 µm 600 µ m CCE 50%-60% single-crystal CVDD d = µm ~ 5 x 5 mm2 CCE = 100% The exclusive world distributor is Diamond Detectors Ltd. (DDL), UK Customized and 'on stock sccvdd detectors: ready for use! CARAT01/CARAT01Talks/Moore.ppt

4 R&D STATUS ADVANCED MATERIALS 1. pccvdd Diamond Materials GmbH, Freiburg, DE Diamond membranes e.g.: Quadrant Beam Monitors for PETRA III high quality pcvdd on silicon ring free diameter: 10mm thickness < 10µm metallization (20µm gap) CARAT01/CARAT01Talks/Woerner.pdf INFN and University of Florence, Italy Silicon-on-diamond devices e.g.: towards Monolithic Diamond Detectors CARAT01/CARAT01Talks/Sciortino.pdf

5 R&D STATUS ADVANCED MATERIALS 2. Homoepitaxial sccvdd Common R&D project: RD42 + E6 + DDL 'Large area plates' up to (10x10)mm² Common R&D project: NoRHDia + E6 + DDL 'Thin plates' down to 40 µ Improved surface quality sc8bp-s1, 100µm m rms roughness < 1nm AFM CROSS-POLARIZER LIGHT IMAGE (a) Improved bulk quality isolated 'threading dislocations' Q1 Q4 IBP Q2 Q3

6 R&D STATUS ADVANCED MATERIALS 3. Heteroepitaxial 'sccvdd Dia-on-Ir (DoI)* ORIGINAL STRUCTURE 1) IRIDIUM ELECTRODE (growth side polished) 3) INTERMEDIATE IRIDIUM ELECTRODES top-electrode top-electrode el-x.. ground University of Augsburg 2) FREESTANDING* (both sides polished) el-3 el-2 el-1 /CARAT01/CARAT01Talks/ Schreck.pdf MSU East Lansing 1) 2) standard DoI* *DoI 549a, d = 230 µm 3rd/A_Stolz_1.pdf 3) thin HI sensors*; stacked start detectors *DoI 724b, d = 12 µm

7 ED T LESTATUS R&D P M CO SPECTROSCOPY DETECTORS Using spectroscopy amplifiers for silicon sensors UNILAC ENERGIES SIS ENERGIES sccvdd: no PHD E/E 1.3 % Z/Z 1 sccvdd similar to silicon silicon: 5.5% PHD E/E > 3 % Z/Z > 1 sccvdd superior to silicon E. Berdermann et al., Proc. 20th DIAMOND 2009, Diam. and Relat. Mater. 2010

8 C ED HIR&D T LE P OM STATUS TIMING DETECTORS Various new amplifiers developed and tested at GSI * 120* May 2006 FEE-1 LCBB* E. Berdermann, M. Ciobanu et al., Proc. IEEE NSS (2009) Orlando

9 Li, 2.5AGeV TEST BEAM OCTOBER Thin Plate Diamonds W. Koenig, HADES Li (Z=3) in 50µm and 100µm compared to p in 500µm: 6 L i6 - B e a m Ω E 9* larger Qind. 10 (5)* less D ia m o n d 4kΩ primary signal shorter CD, 10(5)* larger Segm ent + State of the art SiGe:C transistor BFR705L3RH; S/N improved by nearly 50%; Risetime decr. by 10% Detector +Amp. Booster Amp. Discrimi nator 40 m CAMAC TDC QDC

10 Li, 2.5AGeV TEST BEAM OCTOBER Final Results σ = 46ps time difference for 100µ / 50µ diamonds σ = 52ps Counts Counts time difference for two 100µ diamonds W. Koenig, HADES ,8-0,6-0,4-0,2 0 0,2 0,4 0,6 0,8 1 0 Time-Difference [ns] Time resolution: One diamond: σ Corrected for digital resolution: σ = 33ps = 21ps (Two pulser measurements extrapolated to infinite pulseheight: 25 ps) unusually strong walk correction for diamond detectors -2-1,5-1 -0,5 0 0,5 Time-Difference [ns] 1 1,5 Time resolution: 50µ diamond: σ = 40ps Corrected for digital resolution: σ = 31ps Different slope for low charge tail (reduced field in non-metalized area?) 2

11 R E V R&D G NE INSTATUS D EN RADIATION HARDNESS (CCD) NoRHDia Results: p26 MeV, n20 MeV 0x lower than predicted by NIEL; Main defects: neutral vacancies (V0) Z-axis: CCD RD42: M. Pomorski, PhD Thesis Agreement with RD42 data Average MIP signal in 400µm diamond after ~ 2 x 1016 p/cm² 2500 e

12 R&D STATUS RADIATION HARDNESS an h (Timing) t r!! e h Higor CCD f TCT with 241Am-α-particles 1/τ = β pr.rate *Φ Equal β proe,h for p and n irradiation. M. Pomorski, PhD Thesis

13 EARLY DoI SAMPLES Compared to pc- and sccvdd Crystal Structure Birefringence Images (a) Q1 Q4 Q2 Q3 Dia-on-Iridium Dia-on-Dia Dia-on-Silicon quasi single-crystal single-crystal poly-crystal

14 EARLY DoI SAMPLES Compared to pc- and sccvdd Dark Current Characteristics Dia-on-Diamond Dia-on-Silicon Dia-on-Iridium DoI: lowest dark conductivity! Is dark current vanishing by trap compensation??

15 TCT WITH 241Am-α-particles: timing & CCE DoI sensors show narrowest FWHM < 300ps and comparable amplitudes to homoepitaxial diamond.

16 EARLY DoI SAMPLES Compared to pc- and sccvdd Charge-Collection Efficiency (CCE) DoI549a 230µm CCE DoI724b 12µm ED [V/µm] Stopped ions cause strong polarization!

17 EARLY DoI SAMPLES Compared to pc- and sccvdd Homogeneity of the Signal Response CCE 43% δe/e 18% Am, 5.5MeV Am, 5.5MeV COUNT S COUNT S DoI CVDD; 12µm quardant sensor CCESC = 1 CCEDoI 0.1 CCEPC 0.2 δe/esc 0.5% δe/edoi 38% δe/epc 50%

18 SUMMARY AND CONCLUSIONS HI Timing detectors, pc-& sccvd-dd: MIP t- sensors (sccvdd): 21ps!! Radiation Hardness, pc- & sccvdd: ready, excellent σ i 25ps last result with thin sensors MIP signal after 2x1016 p,n/cm2 = 2500e; timing maintained (!) DoI (preliminary) Unexpectedly high breakdown field Dislocations must be reduced! Timing results promising; extraordinary high rate capability!