STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low V CE(sat) Trench IGBT technology 1μs short circuit capability V CE(sat) with positive temperature coefficient Maximum junction temperature 175 o C Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic 216 STARPOWER Semiconductor Ltd. 1/22/216 1/13 SXA
Absolute Maximum Ratings T C =25 o C unless otherwise noted IGBT-inverter Symbol Description Value Unit V CES Collector-Emitter Voltage 12 V V GES Gate-Emitter Voltage ±2 V I C Collector Current @ T C =25 o C 72 @ T C =1 o C 4 A I CM Pulsed Collector Current t p =1ms 8 A P D Maximum Power Dissipation @ T j =175 o C 28 W Diode-inverter Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 12 V I F Diode Continuous Forward Current 4 A I FM Diode Maximum Forward Current t p =1ms 8 A Diode-rectifier Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 16 V I O Average Output Current 5Hz/6Hz,sine wave 4 A I FSM Surge Forward Current V R =V,t p =1ms,T j =45 o C 6 A I 2 t I 2 t-value,v R =V,t p =1ms,T j =45 o C 18 A 2 s IGBT-brake Symbol Description Value Unit V CES Collector-Emitter Voltage 12 V V GES Gate-Emitter Voltage ±2 V I C Collector Current @ T C =25 o C 3 @ T C =1 o C 15 A I CM Pulsed Collector Current t p =1ms 3 A P D Maximum Power Dissipation @ T j =175 o C 145 W Diode-brake Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 12 V I F Diode Continuous Forward Current 15 A I FM Diode Maximum Forward Current t p =1ms 3 A Module Symbol Description Values Unit T jmax Maximum Junction Temperature(inverter,brake) 175 Maximum Junction Temperature (rectifier) 15 o C T jop Operating Junction Temperature -4 to +15 o C T STG Storage Temperature Range -4 to +125 o C V ISO Isolation Voltage RMS,f=5Hz,t=1min 25 V 216 STARPOWER Semiconductor Ltd. 1/22/216 2/13 SXA
IGBT-inverter Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I C =4A,V GE =15V, 1.7 2.15 V CE(sat) Collector to Emitter Saturation Voltage I C =4A,V GE =15V, T j =125 o C 1.95 V I C =4A,V GE =15V, T j =15 o C 2. V GE(th) Gate-Emitter Threshold Voltage I C =1.mA,V CE =V GE, 5.2 6. 6.8 V I CES Collector Cut-Off Current V CE =V CES,V GE =V, 1. ma I GES Gate-Emitter Leakage Current V GE =V GES,V CE =V, 1 na R Gint Internal Gate Resistance Ω t d(on) Turn-On Delay Time 145 ns t r Rise Time 28 ns t d(off) Turn-Off Delay Time 194 ns V CC =6V,I C =4A, t f Fall Time 295 ns R G =12Ω,V GE =±15V, Turn-On Switching E T j =25 o on C 1.89 mj E off Turn-Off Switching 2.31 mj t d(on) Turn-On Delay Time 146 ns t r Rise Time 3 ns t d(off) Turn-Off Delay Time 28 ns V CC =6V,I C =4A, t f Fall Time 466 ns R G =12Ω,V GE =±15V, Turn-On Switching E T j =125 o on C 2.31 mj E off Turn-Off Switching 3.51 mj t d(on) Turn-On Delay Time 148 ns t r Rise Time 32 ns t d(off) Turn-Off Delay Time 212 ns V CC =6V,I C =4A, t f Fall Time 48 ns R G =12Ω,V GE =±15V, Turn-On Switching E T j =15 o on C 2.45 mj E off Turn-Off Switching 3.69 mj I SC SC Data t P 1μs,V GE =15V, T j =15 o C,V CC =9V, V CEM 12V 16 A 216 STARPOWER Semiconductor Ltd. 1/22/216 3/13 SXA
Diode-inverter Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I Diode Forward F =4A,V GE =V, 2. 2.45 V F I V Voltage F =4A,V GE =V,T j =125 o C 1.9 I F =4A,V GE =V,T j =15 o C 1.88 Q r Recovered Charge 1.8 μc Peak Reverse V R =6V,I F =4A, I RM 4 A Recovery Current -di/dt=11a/μs,v GE =-15V Reverse Recovery E rec.93 mj Energy Q r Recovered Charge 2.9 μc Peak Reverse V R =6V,I F =4A, I RM 47 A Recovery Current -di/dt=11a/μs,v GE =-15V Reverse Recovery T j =125 o C E rec 2.19 mj Energy Q r Recovered Charge 3.2 μc Peak Reverse V R =6V,I F =4A, I RM 49 A Recovery Current -di/dt=11a/μs,v GE =-15V Reverse Recovery T j =15 o C E rec 2.56 mj Energy Diode-rectifier Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit V F Diode Forward Voltage I F =4A,V GE =V,T j =15 o C 1.6 V I R Reverse Current T j =15 o C,V R =16V 3. ma 216 STARPOWER Semiconductor Ltd. 1/22/216 4/13 SXA
IGBT-brake Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I C =15A,V GE =15V, 1.7 2.15 V CE(sat) Collector to Emitter Saturation Voltage I C =15A,V GE =15V, T j =125 o C 1.95 V I C =15A,V GE =15V, T j =15 o C 2. V GE(th) Gate-Emitter Threshold Voltage I C =.38mA,V CE =V GE, 5.2 6. 6.8 V I CES Collector Cut-Off Current V CE =V CES,V GE =V, 1. ma I GES Gate-Emitter Leakage Current V GE =V GES,V CE =V, 4 na R Gint Internal Gate Resistance Ω t d(on) Turn-On Delay Time 59 ns t r Rise Time 63 ns t d(off) Turn-Off Delay Time 21 ns V CC =6V,I C =15A, t f Fall Time 149 ns R G =39Ω,V GE =±15V, Turn-On Switching E T j =25 o on C 1.39 mj E off Turn-Off Switching.85 mj t d(on) Turn-On Delay Time 59 ns t r Rise Time 7 ns t d(off) Turn-Off Delay Time 283 ns V CC =6V,I C =15A, t f Fall Time 196 ns R G =39Ω,V GE =±15V, Turn-On Switching E T j =125 o on C 1.87 mj E off Turn-Off Switching 1.24 mj t d(on) Turn-On Delay Time 59 ns t r Rise Time 7 ns t d(off) Turn-Off Delay Time 288 ns V CC =6V,I C =15A, t f Fall Time 221 ns R G =39Ω,V GE =±15V, Turn-On Switching E T j =15 o on C 2.9 mj E off Turn-Off Switching 1.39 mj I SC SC Data t P 1μs,V GE =15V, T j =15 o C,V CC =9V, V CEM 12V 6 A 216 STARPOWER Semiconductor Ltd. 1/22/216 5/13 SXA
Diode-brake Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I Diode Forward F =15A,V GE =V, 2.5 2.5 V F I V Voltage F =15A,V GE =V,T j =125 o C 2.2 I F =15A,V GE =V,T j =15 o C 2.25 Q r Recovered Charge.7 μc Peak Reverse V R =6V,I F =15A, I RM 11 A Recovery Current -di/dt=26a/μs,v GE =-15V Reverse Recovery E rec.54 mj Energy Q r Recovered Charge 2.4 μc Peak Reverse V R =6V,I F =15A, I RM 13 A Recovery Current -di/dt=26a/μs,v GE =-15V Reverse Recovery T j =125 o C E rec 1. mj Energy Q r Recovered Charge 2.6 μc Peak Reverse V R =6V,I F =15A, I RM 13 A Recovery Current -di/dt=26a/μs,v GE =-15V Reverse Recovery T j =15 o C E rec 1.12 mj Energy NTC Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R 25 Rated Resistance 5. kω R/R Deviation of R 1 T C =1 o C,R 1 =493.3Ω -5 5 % P 25 Power Dissipation 2. mw B 25/5 B-value R 2 =R 25 exp[b 25/5 (1/T 2-1/(298.15K))] 3375 K B 25/8 B-value R 2 =R 25 exp[b 25/8 (1/T 2-1/(298.15K))] 3411 K B 25/1 B-value R 2 =R 25 exp[b 25/1 (1/T 2-1/(298.15K))] 3433 K 216 STARPOWER Semiconductor Ltd. 1/22/216 6/13 SXA
Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit L CE Stray Inductance 6 nh R CC +EE 4. Module Lead Resistance,Terminal to Chip R AA +CC 3. mω R thjc R thch Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake) Junction-to-Case (per Diode-brake) Case-to-Heatsink (per IGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per IGBT-brake) Case-to-Heatsink (per Diode-brake) Case-to-Heatsink (per Module).267.533.456.513.878.2.535 1.68.914 1.29 1.76 M Mounting Torque, Screw:M5 3. 6. N.m G Weight of Module 2 g K/W K/W 216 STARPOWER Semiconductor Ltd. 1/22/216 7/13 SXA
8 8 7 V GE =15V 7 V CE =2V 6 6 5 5 I C [A] 4 I C [A] 4 3 3 2 2 1 Tj=25 Tj=125 Tj=15.5 1 1.5 2 2.5 3 3.5 V CE [V] 1 Tj=25 Tj=125 Tj=15 5 6 7 8 9 1 11 12 13 V GE [V] Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics E [mj] 7 6 5 4 3 Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj=15 V CC =6V R G =12Ω V GE =±15V E [mj] 12 1 8 6 Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj=15 2 4 1 2 V CC =6V I C =4A V GE =±15V 1 2 3 4 5 6 7 8 I C [A] 2 4 6 8 1 12 R G [Ω] Fig 3. IGBT-inverter Switching vs. I C Fig 4. IGBT-inverter Switching vs. R G 216 STARPOWER Semiconductor Ltd. 1/22/216 8/13 SXA
9 8 Module 1 IGBT 7 6 I C [A] 5 4 3 Z thjc [K/W].1 2 1 R G =12Ω V GE =±15V T j =15 o C 2 4 6 8 1 12 14 V CE [V] i: 1 2 3 4 r i [K/W]:.322.1766.1711.1551 τ i [s]:.1.2.5.1.1.1.1.1 1 1 t [s] Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance 8 7 Tj=25 Tj=125 Tj=15 4 3.5 Erec Tj=125 Erec Tj=15 6 3 5 2.5 I F [A] 4 E [mj] 2 3 1.5 2 1 1.5 V CC =6V R G =12Ω V GE =-15V.5 1 1.5 2 2.5 3 V F [V] 1 2 3 4 5 6 7 8 I F [A] Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching vs. I F 216 STARPOWER Semiconductor Ltd. 1/22/216 9/13 SXA
3 2.5 Erec Tj=125 Erec Tj=15 1 2 1 Diode E [mj] 1.5 Z thjc [K/W] 1.1.5 V CC =6V I F =4A V GE =-15V 2 4 6 8 1 12 R G [Ω] i: 1 2 3 4 r i [K/W]:.641.3525.3417.397 τ i [s]:.1.2.5.1.1.1.1.1 1 1 t [s] Fig 9. Diode-inverter Switching vs. R G 8 Fig 1. Diode-inverter Transient Thermal Impedance 3 Tj=25 Tj=15 25 V GE =15V 6 2 I F [A] 4 I C [A] 15 2.5.7.9 1.1 1.3 1.5 V F [V] 1 5 Tj=25 Tj=125 Tj=15.5 1 1.5 2 2.5 3 3.5 V CE [V] Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics 216 STARPOWER Semiconductor Ltd. 1/22/216 1/13 SXA
3 25 Tj=25 Tj=125 Tj=15 1 2 1 I F [A] 15 R [kω] 1 1 5.5 1 1.5 2 2.5 3 V F [V].1 3 6 9 12 15 T C [ o C] Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic 216 STARPOWER Semiconductor Ltd. 1/22/216 11/13 SXA
Circuit Schematic Package Dimensions Dimensions in Millimeters 216 STARPOWER Semiconductor Ltd. 1/22/216 12/13 SXA
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