ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 6A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-AC (B-PUK) Major Ratings and Characteristics Parameters ST333C..L Units I T(AV) 6 A @ T hs 55 C I T(RMS) 230 A @ T hs 25 C I TSM @ 50Hz 0 A @ 60Hz A I 2 t @ 50Hz 605 KA2 s @ 60Hz 553 KA 2 s V DRM /V RRM to 0 V t q range 0 to 30 µs T J - to 25 C
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak voltage @ T J V V ma 04 ST333C..L 50 08 0 900 Current Carrying Capability Frequency I TM I TM I TM Units o el o el µs 50Hz 430 250 23 9 630 56 Hz 670 70 230 0 34 5030 0Hz 0 8 90 0 750 A Hz 530 90 990 990 0 Recovery voltage Vr 50 50 50 50 50 50 Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 55 55 55 C Equivalent values for RC circuit 0Ω / 0.47µF 0Ω / 0.47µF 0Ω / 0.47µF On-state Conduction I T(AV) Max. average on-state current 6 (305) A conduction, half sine wave @ Heatsink temperature 55 (75) C double side (single side) cooled I T(RMS) Max. RMS on-state current 230 DC @ 25 C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 0 t = 0ms No voltage non-repetitive surge current A t = 8.3ms reapplied 9250 t = 0ms % V RRM 9700 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 605 t = 0ms No voltage Initial T J max 553 t = 8.3ms reapplied 428 KA 2 s t = 0ms % V RRM 39 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 6050 KA 2 s t = 0. to 0ms, no voltage reapplied 2
On-state Conduction V TM Max. peak on-state voltage.96 I TM = 80A, T J max, t p = 0ms sine wave pulse V T(TO) Low level value of threshold 0.9 voltage V (6.7% x π x I T(AV) < I < π x I T(AV) ), T J V T(TO)2 High level value of threshold voltage 0.93 (I > π x I T(AV) ), T J r Low level value of forward t 0.58 slope resistance mω (6.7% x π x I T(AV) < I < π x I T(AV) ), T J r t2 High level value of forward slope resistance 0.58 (I > π x I T(AV) ), T J I H Maximum holding current 600 ma T J = 25 C, I T > 30A I L Typical latching current 0 T J = 25 C, V A = 2V, Ra = 6Ω, I G = A Switching di/dt Max. non-repetitive rate of rise T J max, V DRM = rated V 0 A/µs DRM of turned-on current I TM = 2 x di/dt T J = 25 C, V DM = rated V DRM, I TM = 50A DC, t p = µs t Typical delay time. d Resistive load, Gate pulse: 0V, 5Ω source µs Min Max T J max, I TM = 550A, commutating di/dt = A/µs t q Max. turn-off time 0 30 V R = 50V, t p = µs, dv/dt: see table in device code Blocking dv/dt Maximum critical rate of rise of T J linear to % V DRM, higher value V/µs off-state voltage available on request I RRM Max. peak reverse and off-state 50 ma T I DRM leakage current J max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 60 P G(AV) Maximum average gate power 0 W T J, f = 50Hz, d% = 50 I GM Max. peak positive gate current 0 A T J max, t p 5ms +V GM Maximum peak positive gate voltage -V GM V T J max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD Max. DC gate current not to trigger ma ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T J = 25 C, V A = 2V, Ra = 6Ω T J max, rated V DRM applied 3
Thermal and Mechanical Specification T J Max. operating temperature range - to 25 T stg Max. storage temperature range - to 50 C R thj-hs Max. thermal resistance, 0. DC operation single side cooled K/W junction to heatsink 0.05 DC operation double side cooled R thc-hs Max. thermal resistance, 0.0 K/W DC operation single side cooled case to heatsink 0.005 DC operation double side cooled F Mounting force, ± 0% 90 N (0) (Kg) wt Approximate weight 250 g Case style TO - AC (B-PUK) See Outline Table R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 0.02 0.00 0.008 0.008 0.04 0.05 0.04 0.04 0.08 0.08 0.09 0.09 K/W T J 0.026 0.027 0.027 0.028 0.045 0.046 0.046 0.046 Ordering Information Table Device Code ST 33 3 C 08 L H K 2 3 4 5 6 7 8 9 0 - Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-AC (B-PUK) 7 - Reapplied dv/dt code (for t q test condition) 8 -t q code dv/dt - t q combinations available dv/dt (V/µs) 50 0 CN DN EN -- -- 9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 CM DM EM FM * -- = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) t (µs) q 5 CL DL EL FL * HL 8 CP DP EP FP HP 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) CK DK EK FK HK 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 25 -- -- -- FJ HJ 30 -- -- -- -- HH 0 - Critical dv/dt: *Standard part number. None = V/µsec (Standard value) All other types available only on request. L = 0V/µsec (Special selection) 4
Outline Table 0.7 (0.03) MIN. 34 (.34) DIA. MAX. TWO PLACES 27 (.06) MAX. PIN RECEPTACLE AMP. 60598-0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 5 8.5 (2.3 ) D IA. M AX. 4.7 (0.8) ± 5 2 HOLES DIA. 3.5 (0.4) x 2.5 (0.) DEEP CREPAGE DISTANCE 36.33 (.430) MIN. STRIKE DISTANCE 7.43 (0.686) MIN. 36.5 (.44) Case Style TO-AC (B-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) Maximum Allowable Heatsink Temperature ( C) 30 (Single Side Cooled) 0 R th J-hs (DC) = 0. K/W 90 Conduction Angle 70 60 50 30 0 300 Average On-state Current (A) M aximum Allowable Heatsink Tem perature ( C ) 30 ST3 33C..L Se rie s (Single Side Cooled) 0 R thj-h s(d C) = 0. K/W 90 Cond uction Period 70 60 50 30 DC 0 300 600 700 0 A ve rag e O n -state C urre nt (A ) Fig. - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5
Maximum Allow able Heatsink Temperature ( C ) 30 ST 333C..L Series (Double Side Cooled) 0 R thj-hs (D C ) = 0.05 K/W 90 Cond uction Angle 70 60 50 30 0 300 600 700 0 Average On-state Current (A) Maxim um Allowable Heatsink Temperature ( C) 30 (Double Side C ooled) 0 R th J-hs (D C) = 0.05 K/W 90 Conduction Period 70 60 50 30 DC 0 600 0 0 Average O n-state C urrent (A) Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 2 0 0 600 RMS Limit 0 0 600 Conduction Angle T J = 25 C 0 0 600 0 0 Maximum Average On-state Power Loss (W) 2 0 600 0 DC RMS Limit Conduction Period ST 333C..L Series T = 25 C J 0 0 600 0 0 600 Average On-state Current (A) Average On-state Current (A) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 00 9 9000 8 00 7 7000 6 6000 5 At An y Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 25 C @ 60 Hz 0.0083 s @ 0.0 s 4 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 0 0 00 9000 00 7000 6000 M axim um N on Repe titive Surg e C urre nt Ve rsus Pulse Train D uration. Co ntro l Of C on duction May Not Be Main tained. In it ia l T J = 2 5 C No Voltage Reapplied Rate d V RRM Reapplied ST3 33C..L Se rie s 0 0.0 0. Pulse Train Duration (s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6
Instanta neous On-state Current (A) 00 0 T J = 25 C T J = 25 C 0 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transien t Therm al Im pedan ce Z th J-hs (K/ W) 0. 0.0 Ste ady State Value R thj-hs = 0. K/W (Single Side Cooled) R th J-hs = 0.05 K/W (Double Side Cooled) (DC O peration ) 0.00 0.00 0.0 0. 0 Square W ave Pulse D uration (s) Fig. 0 - Thermal Impedance Z thj-hs Characteristics Maximum Reverse Recovery Charge - Qrr (µc) 3 300 2 260 2 2 60 I TM = 0 A A 300 A A A T = 25 C J 0 30 50 60 70 90 Rate Of Fall Of On-state Current - di/dt (A/µs) M axim um Reve rse Rec ov ery C urre nt - Irr (A ) 60 60 I TM = 0 A A 300 A A A T = 25 C J 0 30 50 60 70 90 Rate Of Fall Of Forw ard Current - di/dt (A/µs) Fig. - Reverse Recovered Charge Characteristics Fig. 2 - Reverse Recovery Current Characteristics E4 Peak O n-state Current (A) E3 0 50 H z R s = 0 ohm s V D = % VDRM ST333C..L Se ries Sinuso idal pulse T = C C 0 E2 E E2 E3 E4 E4E E E2 E3 E4 R s = 0 ohms V D = % VDR M ST333C..L Se ries Sinusoidal pulse T = 55 C C Fig. 3 - Frequency Characteristics 7
Peak O n-state C urrent (A) E4 E3 R s = 0 ohm s V D = % VDRM 0 0 ST333C..L Se ries Trapezoidal pulse T C = C di/dt = 50A/µs R s = 0 ohms V D = % V DRM 0 0 E2 E E2 E3 E4 E4E E E2 E3 E4 Pulse Base w idth (µs) Tra pezoida l pulse T C = 55 C di/dt = 50A/µs Fig. 4 - Frequency Characteristics Pe ak O n -state C urren t (A ) E4 Snub ber circuit R s = 0 oh m s C s = 0.47 µ F V D = % V DRM 0 E3 0 0 0 ST333C..L Se ries Trap ezoid al pulse Tra pezoidal p ulse T C = C T C = 55 C di/d t = A/µs di/dt = A/µs E2 E E2 E3 E4 E4E E E2 E3 E4 R s = 0 ohm s V D = % V DRM Fig. 5 - Frequency Characteristics Pe ak O n-state Curre nt (A ) E5 E4 E3 E2 0 5 3 2 0.5 0.3 0.2 ST333C..L Serie s Sinusoidal pulse 2 0 jo ule s per p ulse Rectangular pulse di/dt = 50A/µs jo ules per pulse 0 3 5 2 E E E2 E3 E4 E4E E E2 E3 E4 Pulse Base w idth (µs) Pulse Base w idth (µs) Fig. 6 - Maximum On-state Energy Power Loss Characteristics 8 0.2 0.3 0.5
Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a) Recommended load line for rated di/dt : V, 0ohms; tr<= µs b) Recommended load line for <=30% rated di/dt : 0V, 0ohms tr<= µs VGD Tj=25 C (b) Tj=25 C IGD Device: Frequency Limited by PG(AV) 0. 0.00 0.0 0. 0 Tj=- C (a) Instantaneous Gate Current (A) () PGM = 0W, = ms (2) PGM = W, = 0ms (3) PGM = W, = 5ms (4) PGM = 60W, = 3.3ms () (2) (3) (4) Fig. 7 - Gate Characteristics 9