PHDE GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT fieldeffect power transistor in a plastic envelope suitable for surface V DS Drainsource voltage 6 V mounting featuring high avalanche I D Drain current (DC) A energy capability, stable blocking P tot Total power dissipation W voltage, fast switching and high R DS(ON) Drainsource onstate resistance. Ω thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING SOT48 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d gate drain source tab drain g s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 4) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I D Continuous drain current T mb = C; V GS = V A T mb = C; V GS = V 9 A I DM Pulsed drain current T mb = C 48 A P D Total dissipation T mb = C W P D / T mb Linear derating factor T mb > C. W/K V GS Gatesource voltage ± V E AS Single pulse avalanche V DD V; starting T j = C; R GS = Ω; mj energy V GS = V I AS Peak avalanche current V DD V; starting T j = C; R GS = Ω; 6 A V GS = V T j, T stg Operating junction and 7 C storage temperature range THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th jmb Thermal resistance junction to K/W mounting base R th ja Thermal resistance junction to pcb mounted, minimum K/W ambient footprint September 997 Rev.
PHDE ELECTRICAL CHARACTERISTICS T j = C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drainsource breakdown voltage V GS = V; I D =. ma 6 V V (BR)DSS / Drainsource breakdown V DS = V GS ; I D =. ma.8 V/K T j voltage temperature coefficient R DS(ON) Drainsource on resistance V GS = V; I D = 6 A.. Ω V GS(TO) Gate threshold voltage V DS = V GS ; I D =. ma.. 4. V g fs Forward transconductance V DS = V; I D = 6 A.4 4. S I DSS Drainsource leakage current V DS = 6 V; V GS = V. µa V DS = 48 V; V GS = V; T j = C µa I GSS Gatesource leakage current V GS = ± V; V DS = V na Q g(tot) Total gate charge I D = A; V DD = 48 V; V GS = V nc Q gs Gatesource charge nc Q gd Gatedrain (Miller) charge.6 7 nc t d(on) Turnon delay time V DD = V; I D = A; 8 ns t r Turnon rise time R G = 4 Ω; R D =.7 Ω ns t d(off) Turnoff delay time ns t f Turnoff fall time ns L d Internal drain inductance Measured from tab to centre of die. nh L s Internal source inductance Measured from source lead solder 7. nh point to source bond pad C iss Input capacitance V GS = V; V DS = V; f = MHz pf C oss C rss Output capacitance Feedback capacitance 8 48 pf pf SOURCEDRAIN DIODE RATINGS AND CHARACTERISTICS T j = C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current T mb = C A (body diode) I SM Pulsed source current (body diode) T mb = C 48 A V SD Diode forward voltage I S = A; V GS = V. V t rr Reverse recovery time I S = A; V GS = V; 8 ns di/dt = A/µs Q rr Reverse recovery charge. µc September 997 Rev.
PHDE 9 8 7 6 4 PD% Normalised Power Derating 4 6 8 4 6 8 Tmb / C Fig.. Normalised power dissipation. PD% = P D /P D C = f(t mb ) Zth jmb, Transient Thermal Impedance (K/W)....... PD t D = p T us us us ms ms.s s s tp, pulse widtht (s) Fig.4. Transient thermal impedance. Z th jmb = f(t); parameter D = t p /T t p T t 9 8 7 6 4 ID% Normalised Current Derating 4 6 8 4 6 8 Tmb / C Fig.. Normalised continuous drain current. ID% = I D /I D C = f(t mb ); conditions: V GS V V PHPE VGS = 4. V VDS, DrainSource voltage (Volts) Fig.. Typical output characteristics. I D = f(v DS ); parameter V GS 7 V 6. V 6 V. V V RDS(ON) = VDS/ID tp = us us PHPE.4. RDS(on), DrainSource on resistance (Ohms). V 6 V 6. V 7 V PHPE DC ms ms ms.. V VGS = V. VDS, Drainsource voltage (Volts) Fig.. Safe operating area. T mb = C I D & I DM = f(v DS ); I DM single pulse; parameter t p Fig.6. Typical onstate resistance. R DS(ON) = f(i D ); parameter V GS September 997 Rev.
PHDE VDS = V PHPE 4 VGS(TO) / V max. Tj = 7 C typ. min. 4 6 8 VGS, Gatesource voltage (Volts) Fig.7. Typical transfer characteristics. I D = f(v GS ); parameter T j 6 6 4 8 Tj / C Fig.. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D =. ma; V DS = V GS 4 gfs, Transconductance (S) VDD = V Tj = 7 C PHPE E E E ID / A SUBTHRESHOLD CONDUCTION % typ 98 % E4 E Fig.8. Typical transconductance. g fs = f(i D ); parameter T j E6 4 VGS / V Fig.. Subthreshold drain current. I D = f(v GS) ; conditions: T j = C; V DS = V GS. a Normalised RDS(ON) = f(tj) Ciss, Coss, Crss, Junction capacitances (pf) PHPE. Ciss Coss. Crss. 6 6 4 8 Tj / C Fig.9. Normalised drainsource onstate resistance. a = R DS(ON) /R DS(ON) C = f(t j ); I D = A; V GS = V VDS, Drainsource voltage (Volts) Fig.. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = MHz September 997 4 Rev.
PHDE VGS, GateSource voltage (Volts) ID = A VDS = V PHPE 48 V IF, Sourcedrain diode current (Amps) VGS = V PHPE Tj = 7 C Qg, Gate charge (nc) Fig.. Typical turnon gatecharge characteristics. V GS = f(q G ); parameter V DS.. VSDS, Sourcedrain voltage (Volts) Fig.6. SourceDrain diode characteristic. I F = f(v SDS ); parameter T j Switching times (ns) VDD = V VGS = V RD =.7 Ohms ID = A tr td(off) tf td(on) 4 6 8 RG, Gate resistance (Ohms) Fig.4. Typical switching times. t d(on), t r, t d(off), t f = f(r G ) PHPE 9 8 7 6 4 EAS, Normalised unclamped inductive energy (%) 4 6 8 4 6 8 Starting Tj ( C) Fig.7. Normalised unclamped inductive energy. E AS % = f(t j ).. Normalised Drainsource breakdown voltage V(BR)DSS @ Tj V(BR)DSS @ C L + VDD..9 VGS VDS T.U.T. ID/.9 RGS R shunt.8 Tj, Junction temperature (C) Fig.. Normalised drainsource breakdown voltage. V (BR)DSS /V (BR)DSS C = f(t j ) Fig.8. Unclamped inductive test circuit. E AS =. LI D V (BR)DSS /(V (BR)DSS V DD ) September 997 Rev.
PHDE MECHANICAL DATA Dimensions in mm : Net Mass:.4 g seating plane 6.7 max tab..8 max.9 max.4 6. max.4 max 4 min 4.6. min..8 (x).8 max (x).. Fig.9. SOT48 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 7. 7.... 4.7 Fig.. SOT48 : soldering pattern for surface mounting. Notes. Observe the general handling precautions for electrostaticdischarge sensitive devices (ESDs) to prevent damage to MOS gate oxide.. Epoxy meets UL94 V at /8". September 997 6 Rev.
PHDE DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 4). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 997 7 Rev.