NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are Available Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (T C = 5 C unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS DraintoGate Voltage (R GS = M ) V DGR GatetoSource Voltage Continuous Nonrepetitive (t p ms) Drain Current Continuous @ T A = 5 C Continuous @ T A = C Single Pulse (t p s) Total Power Dissipation @ T A = 5 C (Note ) Total Power Dissipation @ T A = 5 C (Note ) Derate above 5 C V GS ± ± I D I D I DM.. 9. P D... Operating and Storage Temperature Range T J, T stg 55 to 75 Vpk Adc Apk W W W/ C C G. A, V R DS(on) = m SOT CASE 8E STYLE NChannel D S MARKING DIAGRAM & PIN ASSIGNMENT Drain Gate AWW 55 Drain Source A = Assembly Location WW = Work Week 55 = Specific Device Code = PbFree Package (Note: Microdot may be in either location) Single Pulse DraintoSource Avalanche Energy Starting T J = 5 C (V DD = 5, V GS =, I L (pk) = 7. Apk, L =. mh, V DS = ) Thermal Resistance JunctiontoAmbient (Note ) JunctiontoAmbient (Note ) Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds E AS 7 mj R JA 7. R JA C/W T L C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. When surface mounted to an FR board using pad size, oz. (Cu. Area.7 sq in).. When surface mounted to an FR board using minimum recommended pad size,. oz. (Cu. Area.7 sq in). ORDERING INFORMATION Device Package Shipping NTF55T SOT /Tape & Reel NTF55TG NTF55T SOT /Tape & Reel NTF55TG SOT (PbFree) SOT (PbFree) /Tape & Reel /Tape & Reel NTF55TLF SOT /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, February, Rev. Publication Order Number: NTF55/D
NTF55 ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note ) (V GS =, I D = 5 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V DS =, V GS = ) (V DS =, V GS =, T J = 5 C) GateBody Leakage Current (V GS = ±, V DS = ) V (BR)DSS I DSS 8. mv/ C Adc I GSS ± nadc ON CHARACTERISTICS (Note ) Gate Threshold Voltage (Note ) (V DS = V GS, I D = 5 Adc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note ) (V GS =, I D =.5 Adc) V GS(th).... R DS(on) 88 mv/ C m Static DraintoSource OnResistance (Note ) (V GS =, I D =. Adc) (V GS =, I D =.5 Adc, T J = 5 C) DS(on).7.. Forward Transconductance (Note ) (V DS = 8., I D =.7 Adc) g fs. Mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 55 pf Output Capacitance (V DS = 5, V GS = V, f =. MHz) C oss 5 5 Transfer Capacitance C rss 55 SWITCHING CHARACTERISTICS (Note ) TurnOn Delay Time t d(on) 9. ns Rise Time (V DD =, I D =. Adc, t r V GS =, TurnOff Delay Time R G = 9. ) (Note ) t d(off) 5 Fall Time t f Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage Reverse Recovery Time (V DS = 8, I D =. Adc, V GS = ) (Note ) (I S =. Adc, V GS = ) (I S =. Adc, V GS =, T J = 5 C) (Note ) (I S =. Adc, V GS =, di S /dt = A/ s) (Note ) Q T. nc Q.9 Q. V SD.89.7. t rr ns t a t b 8. Reverse Recovery Stored Charge Q RR. C. Pulse Test: Pulse Width s, Duty Cycle.%.. Switching characteristics are independent of operating junction temperatures.
NTF55 5 V GS = V V GS = 8 V V GS = V V GS = 5 V V GS =.5 V V GS = V 5 V DS V T J = 5 C T J = C T J = 55 C.5.5 5 5.5 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( ) R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED).. V GS = V.. T J = C...8.....8....8 5 I D =.5 A V GS = V T J = 5 C T J = 55 C Figure. OnResistance versus GatetoSource Voltage. 5 5 5 5 75 5 T J, JUNCTION TEMPERATURE ( C) 5 Figure 5. OnResistance Variation with Temperature 75 R DS(on), DRAINTOSOURCE RESISTANCE ( ) I DSS, LEAKAGE (na)...8... V GS = 5 V T J = 5 C 5 Figure. OnResistance versus Drain Current and Gate Voltage V GS = V T J = C T J = 55 C 5 T J = 5 C T J = 5 C T J = C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure. DraintoSource Leakage Current versus Voltage
NTF55 C, CAPACITANCE (pf) t, TIME (ns) 8 7 5 5 V GS V DS 5 5 5 V DS = V C iss C rss GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation V DS = V I D = A V GS = V t d(off) V GS = V C rss t f C iss C oss t r t d(on) T J = 5 C V GS, GATETOSOURCE VOLTAGE (VOLTS) I S, SOURCE CURRENT (AMPS) 8 I D = A T J = 5 C 8 Q V GS Q g, TOTAL GATE CHARGE (nc) Figure 8. GatetoSource and DraintoSource Voltage versus Total Charge V GS = V T J = 5 C Q Q T.5.58...7.7.78.8.8 R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation versus Gate Resistance V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage versus Current.9 I D, DRAIN CURRENT (AMPS) V GS = V SINGLE PULSE T C = 5 C ms ms. R DS(on) LIMIT s THERMAL LIMIT PACKAGE LIMIT dc.. 5 5 75 5 5 75 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) T J, STARTING JUNCTION TEMPERATURE ( C) Figure. Maximum Rated Forward Biased Safe Operating Area E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) 8 7 5 I D = 7 A Figure. Maximum Avalanche Energy versus Starting Junction Temperature
NTF55 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE (NORMALIZED).. x inch oz. Cu Pad ( x inch FR)...... t, TIME (s) Figure. Thermal Response 5
NTF55 PACKAGE DIMENSIONS D b SOT (TO) CASE 8E ISSUE L NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH..8 () H E e A e b E A L C MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5..75...8 A...... b..75.89...5 b.9...5.. c..9.5.9.. D..5.7.9.5. E..5.7..8.5 e....87.9.9 e.85.9.5..7. L.5.75...9.78 H E.7 7. 7...7.87 STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN SOLDERING FOOTPRINT*.8.5..79..9..9..8..79.5.59 SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Phoenix, Arizona 858 USA Phone: 88977 or 88 Toll Free USA/Canada Fax: 889779 or 887 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: 857785 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTF55/D