Six-Pack XPT IGBT MIXA30W1200TMH. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TMH

MIX3W12TMH Six-Pack XPT IGBT S = 12 25 = 43 (sat) = 1.8 Part name (Marking on product) MIX3W12TMH E 72873 Pin configuration see outlines. Features: High level of integration - only one power semiconductor module required for the whole drive Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for µsec. - very low gate charge - square RBSO @ 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low (sat) Temperature see included SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Pumps, Fa Washing machines ir-conditioning system Inverter and power supplies Package: "Mini" package ssembly height is 17 mm Iulated base plate Pi suitable for wave soldering and PCB mounting ssembly clips available - IXKU 5-55 screw clamp - IXRB 5-56 click clamp UL registered E72873 212b 2 IXYS ll rights reserved 1-6

MIX3W12TMH Ouput Inverter T1 - T6 Symbol Definitio Conditio min. typ. max. Unit S collector emitter voltage = 25 C 12 S M max. DC gate voltage max. traient collector gate voltage continuous traient 25 collector current T C = 25 C 8 T C = 8 C P tot total power dissipation T C = 25 C 15 W (sat) collector emitter saturation voltage = 25 ; = 15 = 25 C 1.8 2.1 ±2 ±3 43 3 2.1 (th) gate emitter threshold voltage = 1 m; = = 25 C 5.4 5.9 6.5 ES collector emitter leakage current = S ; = = 25 C.2.3.15 m m I GES gate emitter leakage current = ±2 5 n Q G(on) total gate charge = 6 ; = 15 ; = 25 76 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load = 6 ; = 25 = ±15 ; R G = 39 W RBSO reverse bias safe operating area = ±15 ; R G = 39 W; K = 12 I SC short circuit safe operating area = 9 ; = ±15 ; (SCSO) R G = 39 W; t p = µs; non-repetitive R thjc R thch thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 7 4 25 2.5 3. mj mj 75.24.84 K/W K/W Output Inverter D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RM max. repetitve reverse voltage = 25 C 12 I F25 I F8 forward current T C = 25 C T C = 8 C F forward voltage I F = 3 ; = = 25 C Q rr I RM t rr E rec R thjc R thch reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case thermal resistance case to heatsink = 6 /dt = -6 /µs I F = 3 ; = (per diode) 1.95 1.95 3.5 3 35.9.4 44 29 2.2 µc mj 1.2 K/W K/W 212b 2 IXYS ll rights reserved 2-6

MIX3W12TMH Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 25 resistance T C = 25 C 4.75 5. B 25/5 3375 5.25 kw K R [Ω] 25 5 75 125 15 T C [ C] Typ. NTC resistance vs. temperature Module Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature -4-4 125 15 125 C C C ISOL isolation voltage I ISOL < 1 m; 5/6 Hz 25 ~ CTI comparative tracking index - F C mounting force 4 8 N d S d creep distance on surface strike distance through air Weight 35 g 12.7 12 mm mm T C = 25 C unless otherwise stated 212b 2 IXYS ll rights reserved 3-6

MIX3W12TMH Circuit Diagram Outline Drawing Dimeio in mm (1 mm =.394 ) Part number M = Module I = IGBT X = XPT = standard 3 = Current Rating W = 6-Pack 12 = Reverse oltage T = NTC MH = MiniPack2 Ordering Part Number Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX 3 W 12 TMH MIX3W12TMH Box 2 47414 212b 2 IXYS ll rights reserved 4-6

MIX3W12TMH IGBT T1 - T6 5 4 = 15 5 4 = 15 17 19 13 11 3 2 = 25 C 3 2 9 1 2 3 Fig. 1 Typ. output characteristics 1 2 3 4 5 Fig. 2 Typ. output characteristics 5 4 2 15 = 25 = 6 3 2 5 E 6 5 4 [mj] 3 = 25 C 5 6 7 8 9 11 12 13 2 1 Fig. 3 Typ. tranfer characteristics R G = 39 Ω = 6 = ±15 2 3 4 5 E on E off Fig. 5 Typ. switching energy vs. collector current 4. 3.5 3. 2.5 E 2. [mj] 1.5 1..5 2 4 6 8 E off Q G [nc] Fig. 4 Typ. turn-on gate charge E on = 25 = 6 = ±15. 2 4 6 8 12 14 16 R G [Ω ] Fig. 6 Typ. switching energy vs. gate resistance 212b 2 IXYS ll rights reserved 5-6

MIX3W12TMH Diode D1 - D6 6 5 7 6 = 6 4 5 6 I F 3 2 = 25 C Q rr [µc] 4 3 2 3 15..5 1. 1.5 2. 2.5 3. F Fig. 7 Typ. Forward current versus F 1 3 4 5 6 7 8 9 1 /dt [/µs] Fig. 8 Typ. reverse recov.charge Q rr vs. di/dt 7 7 6 = 6 6 6 = 6 5 3 5 I RR 4 3 2 15 t rr [] 4 3 2 6 3 15 3 4 5 6 7 8 9 1 /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 3 4 5 6 7 8 9 1 /dt [/µs] Fig. Typ. recovery time t rr versus di/dt E rec 2. 1.6 1.2 = 6 6 3 Z thjc 1 Diode IGBT [mj].8.4 15. 3 4 5 6 7 8 9 1 /dt [/µs] Fig.11 Typ. recovery energy E rec versus di/dt [K/W].1 IGBT 4.16.8.2941.8.1.1.1.1 1 t p [s] FRD R i t i R i t i 1.18.25.3413.25 2.14.3.2171.3 3.36.3.3475.3 Fig. 12 Typ. traient thermal impedance 212b 2 IXYS ll rights reserved 6-6