SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package Ordering Code Tape and Reel Information SOT89 Q6742-S468 - Marking KC Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =25 C T =7 C Pulsed drain current I D puls -.76 T =25 C I D -.9 -. Reverse diode dv/dt dv/dt 6 kv/µs I S =-.9, V DS =-2V, di/dt=-2/µs, T jmax =5 C Gate source voltage V GS ±2 V Power dissipation P tot W T =25 C Operating and storage temperature T j, T stg -55... +5 C IEC climatic category; DIN IEC 68-55/5/56 Page 22-7-25
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R thjs - - K/W (Pin 2) Thermal resistance, junction - ambient, leaded R thj - - 25 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS -25 - - V V GS =, I D =-25µ Gate threshold voltage, V GS = V DS V GS(th) - -.5-2 I D =-3µ Zero gate voltage drain current V DS =-25V, V GS =, T j =25 C V DS =-25V, V GS =, T j =5 C I DSS µ - - -. - -.2 - Gate-source leakage current I GSS - - - n V GS =-2V, V DS = Drain-source on-state resistance R DS(on) - 2 Ω V GS =-2.8V, I D =-.25 Drain-source on-state resistance R DS(on) - 8.3 5 V GS =-4.5V, I D =-. Drain-source on-state resistance R DS(on) - 7.7 2 V GS =-V, I D =-.9 Page 2 22-7-25
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS 2* I D *R DS(on)max,.9.38 - S I D =-. Input capacitance C iss V GS =, V DS =-25V, - 83 4 pf Output capacitance C oss f=mhz - 3 6 Reverse transfer capacitance C rss - 6 8 Turn-on delay time t d(on) V DD =-25V, V GS =-V, - 4.7 7 ns Rise time t r I D =-.9, R G =2Ω - 5.2 8 Turn-off delay time t d(off) - 72 8 Fall time t f - 5 75 Gate Charge Characteristics Gate to source charge Q gs V DD =-2V, I D =-.9 - -.2 -.25 nc Gate to drain charge Q gd - -.9-2.4 Gate charge total Q g V DD =-2V, I D =-.9, - -4.9-6. V GS = to -V Gate plateau voltage V (plateau) V DD =-2V, I D =-.9 - -2.63 - V Reverse Diode Inverse diode continuous forward current I S T =25 C - - -.9 Inv. diode direct current, pulsed I SM - - -.76 Inverse diode forward voltage V SD V GS =, I F =-.9 - -.78 -. V Reverse recovery time t rr V R =-25V, I F =l S, - 46 57 ns Reverse recovery charge Q rr di F /dt=/µs - 72 9 nc Page 3 22-7-25
Power dissipation P tot = f (T ). W 2 Drain current I D = f (T ) parameter: V GS V -.2.9.8 -.6 -.4 Ptot.7 ID -.2.6.5.4 -. -.8.3 -.6.2 -.4. -.2 2 4 6 8 2 C 6 T 2 4 6 8 2 C 6 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C - 4 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T 3 K/W 2 - t p = 24.µs ID - - R DS(on) = V DS / I D ms ms ZthJ - D =.5.2-2 - -2..5.2 DC -3 single pulse. -3 - - - - - - 2 V - 3 V DS Page 4-4 -7-6 -5-4 -3-2 s t p 22-7-25
5 Typ. output characteristic I D = f (V DS ) parameter: T j =25 C, -V GS 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: V GS ; T j =25 C, -V GS -ID.7.5.4.3.2 V 6V 4.6V 4V 3.6V 3.4V 3.2V 2.8V 2.6V 2.4V RDS(on) 5 Ω 2.5 9 7.5 6 4.5 3 2.4V 2.6V 2.8V 3.2V V 6V 4.6V 4V 3.6V 3.4V..5 2 3 4 5 6 7 8 V -V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS 2 x I D x R DS(on)max parameter: T j = 25 C.7..2.3.4.5.7 -I D 8 Typ. forward transconductance g fs = f(i D ) parameter: T j =25 C.8 S.5.6 -ID.4 gfs.5.4.3.3.2.2...5.5 2 2.5 V 3.5 -V GS..2.3.4.5.7 -I D Page 5 22-7-25
9 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = -.9, V GS = - V Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS 32 2.2 Ω V 98% RDS(on) 24 2 - VGS(th).8.6 typ..4 6 98%.2 2 2% 8 typ.8 4.6-6 -2 2 6 C 8 T j.4-6 -2 2 6 C 6 T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz, T j = 25 C 2 Forward character. of reverse diode I F = f (V SD ) parameter: T j 3 - pf C iss 2 - - C IF C oss -2 - T j = 25 C typ T j = 5 C typ C rss 6 2 8 24 V 36 -V DS Page 6-3 - T j = 25 C (98%) T j = 5 C (98%) -.4 -.8 -.2 -.6-2 -2.4 V -3 V SD 22-7-25
3 Typ. gate charge V GS = f (Q Gate ) parameter: I D = -.9 pulsed, T j = 25 C -6 V 4 Drain-source breakdown voltage V (BR)DSS = f (T j ) -3 V VGS -2 - -8-6 -4-2 2% 5% 8% 2 3 4 5 6 nc 7.5 Q G V(BR)DSS -285-28 -275-27 -265-26 -255-25 -245-24 -235-23 -225-6 -2 2 6 C 8 T j Page 7 22-7-25
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