MIXWBTMH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 2 = 28 2 = 28 I FSM = 27 CE(sat) = 1.8 CE(sat) = 1.8 Part name (Marking on product) MIXWBTMH P P1 D8 D D12 D7 T1 T3 T D1 D3 D L1 L2 L3 D9 D11 D13 NTC1 NTC2 T7 G1 G3 G B U W T2 T4 T6 D2 D4 D6 GB G2 G4 G6 E 72873 Pin configuration see outlines. N NB EU E EW Features: High level of integration - only one power semiconductor module required for the whole drive Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for µsec. - very low gate charge - square RBSO @ 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) Temperature see included SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Pumps, Fa Washing machines ir-conditioning system Inverter and power supplies Package: "Mini" package ssembly height is 17 mm Iulated base plate Pi suitable for wave soldering and PCB mounting ssembly clips available - IXKU - screw clamp - IXRB -6 click clamp UL registered E72873 IXYS reserves the right to change limits, test conditio and dimeio. 13b IXYS ll rights reserved 1-8
MIXWBTMH Ouput Inverter T1 - T6 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 2 C GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 2 collector current T C = 2 C 8 T C = 8 C P tot total power dissipation T C = 2 C W CE(sat) collector emitter saturation voltage = 16 ; GE = 1 T J = 2 C T J 1.8 2.1 ± ±3 28 2.1 GE(th) gate emitter threshold voltage =.6 m; GE = CE T J = 2 C. 6. ES collector emitter leakage current CE = CES ; GE = T J = 2 C T J.1.1 m m I GES gate emitter leakage current GE = ± n Q G(on) total gate charge CE = 6 ; GE = 1 ; = 1 48 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T J CE = 6 ; = 1 GE = ±1 ; R G = 6 W RBSO reverse bias safe operating area GE = ±1 ; R G = 6 W; CEK = T J I SC short circuit safe operating area CE = 9 ; GE = ±1 ; T J (SCSO) R G = 6 W; t p = µs; non-repetitive thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 7 4 2 1. 1.7 4 6.42 1.26 Output Inverter D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage T J = 2 C I F2 I F8 forward current T C = 2 C T C = 8 C F forward voltage I F = ; GE = T J = 2 C T J Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case thermal resistance case to heatsink R = 6 di F /dt = -4 /µs T J I F = ; GE = (per diode) 1.9 1.9 3 3.7. 33 22 2.2 µc 1. IXYS reserves the right to change limits, test conditio and dimeio. 13b IXYS ll rights reserved 2-8
MIXWBTMH Brake T7 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 2 C GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 2 collector current T C = 2 C 8 T C = 8 C P tot total power dissipation T C = 2 C W CE(sat) collector emitter saturation voltage = 16 ; GE = 1 T J = 2 C T J 1.8 2.1 ± ±3 28 2.1 GE(th) gate emitter threshold voltage =.6 m; GE = CE T J = 2 C. 6. ES collector emitter leakage current CE = CES ; GE = T J = 2 C T J.1.1.1 m m I GES gate emitter leakage current GE = ± n Q G(on) total gate charge CE = 6 ; GE = 1 ; = 1 48 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T J CE = 6 ; = 1 GE = ±1 ; R G = 6 W RBSO reverse bias safe operating area GE = ±1 ; R G = 6 W; CEK = T J I SC short circuit safe operating area CE = 9 ; GE = ±1 ; T J (SCSO) R G = 6 W; t p = µs; non-repetitive thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 7 4 2 1. 1.7 4 6.42 1.26 Brake Chopper D7 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage T J = 1 C I F2 I F8 forward current T C = 2 C T C = 8 C F forward voltage I F = ; GE = T J = 2 C T J I R reverse current R = RRM T J = 2 C T J Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case thermal resistance case to heatsink R = 6 di F /dt = /µs T J I F = ; GE = (per diode) 1.9 1.9.1.1.6 6 3.1 1.1 12 8 2.2.1 m m µc 3.4 IXYS reserves the right to change limits, test conditio and dimeio. 13b IXYS ll rights reserved 3-8
MIXWBTMH Input Rectifier Bridge D8 - D11 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage T J = 2 C 16 I F I DM average forward current max. average DC output current sine 18 T C = 8 C rect.; d = 1 / 3 T C = 8 C I FSM max. forward surge current t = ms; sine Hz T J = 2 C T J I 2 t I 2 t value for fusing t = ms; sine Hz T J = 2 C T J P tot total power dissipation T C = 2 C 69 W F forward voltage I F = 3 T J = 2 C T J I R reverse current R = RRM T J = 2 C T J.3 thermal resistance junction to case (per diode) thermal resistance case to heatsink (per diode).6 1.27 1.24 24 69 27 24 36 29 2 s 2 s 1.6.1 m m 1.8 Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 2 resistance T C = 2 C 4.7. B 2/ 337.2 kw K Module Symbol Definitio Conditio min. typ. max. Unit T J T JM T stg operating temperature max. virtual junction temperature storage temperature -4-4 12 1 12 C C C ISOL isolation voltage I ISOL < 1 m; /6 Hz 2 ~ CTI comparative tracking index - F C mounting force 4 8 N d S d creep distance on surface strike distance through air Weight 3 g Equivalent Circuits for Simulation 12.7 12 mm mm I Symbol Definitio Conditio min. typ. max. Unit R rectifier diode D8 - D13 T J = 1 C.86 R 12.3 IGBT T1 - T6 T J = 1 C 1.1 R 86.3 free wheeling diode D1 - D6 T J = 1 C 1.19 R 4. IGBT T7 T J = 1 C 1.1 R 86.3 free wheeling diode D7 T J = 1 C 1.1 R 171 IXYS reserves the right to change limits, test conditio and dimeio. T C = 2 C unless otherwise stated 13b IXYS ll rights reserved 4-8
MIXWBTMH Circuit Diagram P P1 D8 D D12 D7 T1 T3 T D1 D3 D L1 L2 L3 D9 D11 D13 NTC1 NTC2 T7 G1 G3 G B U W T2 T4 T6 D2 D4 D6 GB G2 G4 G6 N NB EU E EW Outline Drawing Dimeio in mm (1 mm =.394 ), ±, 17 ±,3 12 Ø4 14,9 4,6 12, 8,1 ±,3 48,26 44,4 3,6 31,7 27,94 26,37 24,13,32 16,1 8,89 2,6 12,4 23 26,6 39,6 4,6 ( 2 : 1 ) 1,2 2,2,63 31,7 22,86 19, 17,78,16 8,89 6,3 2,4 P1 B P NB GB EW E EU G6 G4 G2 NTC1 G1 G3 U 3,6 Pin positio with tolerance Ø.4 L1 L2 L3 NTC2 1,8 1,4 N G W Product Marking Part number M = Module I = IGBT X = XPT = standard = Current Rating [] WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse oltage [] T = NTC MH = MiniPack2 Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX WB TMH MIXWBTMH Box 8616 IXYS reserves the right to change limits, test conditio and dimeio. 13b IXYS ll rights reserved - 8
MIXWBTMH IGBT T1 - T6 3 2 GE = 1 3 2 GE = 1 17 19 13 11 [] 1 T J = 2 C T J [] 1 T J 9 1 2 3 CE [] Fig. 1 Typ. output characteristics 1 2 3 4 CE [] Fig. 2 Typ. output characteristics 3 2 1 = 1 CE = 6 [] 1 T J T J = 2 C GE [] 6 7 8 9 11 12 13 GE [] Fig. 3 Typ. tranfer characteristics 3 4 6 Q G [nc] Fig. 4 Typ. turn-on gate charge 4 3 R G = 6 Ω CE = 6 GE = ±1 T J E on E off 2.8 2.4 = 1 CE = 6 GE = ±1 T J E 2 [] E 2. [] 1 1.6 E off E on 1 2 3 3 [] Fig. Typ. switching energy vs. collector current 1.2 4 6 8 1 14 16 R G [Ω] Fig. 6 Typ. switching energy vs. gate resistance IXYS reserves the right to change limits, test conditio and dimeio. 13b IXYS ll rights reserved 6-8
MIXWBTMH Diode D1 - D6 4 3 4 T J R = 6 4 I F [] Q rr [µc] 3 T J T J = 2 C 2.. 1. 1. 2. 2. 3. F [] Fig. 7 Typ. Forward current versus F 1 3 4 6 7 di F /dt [/µs] Fig. 8 Typ. reverse recov.charge Q rr vs. di/dt 3 7 I RR 3 2 T J R = 6 4 t rr 6 4 T J R = 6 [] 1 [] 3 4 3 4 6 7 di F /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 3 4 6 7 di F /dt [/µs] Fig. Typ. recovery time t rr versus di/dt 1.4 1.2 T J R = 6 Diode 1. 4 1 IGBT E rec.8 [].6.4.2 3 4 6 7 di F /dt [/µs] Fig. 11 Typ. recovery energy E rec versus di/dt Z thjc [].1 IGBT FRD R i t i R i t i 1.22.1.461.1 2.9.3.291.3 3.41.3.423.3.1 4.28.8.326.8.1.1.1 1 t p [s] Fig. 12 Typ. traient thermal impedance IXYS reserves the right to change limits, test conditio and dimeio. 13b IXYS ll rights reserved 7-8
MIXWBTMH NTC R [Ω] 2 7 12 1 T C [ C] Fig. 13 Typ. thermistor resistance vs. temperature IXYS reserves the right to change limits, test conditio and dimeio. 13b IXYS ll rights reserved 8-8