STARPOWER SEMICONDUCTOR Rectifier TD180PBS160C5S 1600/180A in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications such as SMPS. Features Low forward voltage drop Small temperature coefficient High surge capacity Low inductance Isolated copper baseplate using DBC technology Typical Applications Active rectifier Half controlled bridge Power supply Equivalent Circuit Schematic 2014 STARPOWER Semiconductor Ltd. 10/18/2014 1/7 Preliminary
Absolute Maximum Ratings T C =25 o C unless otherwise noted Diode-rectifier RRM Repetitive Peak Reverse oltage 1600 I O Average Output T C =80 o C 180 A Surge Forward R =0,t p =10ms, 1800 A I FSM I 2 t I 2 t-value R =0,t p =10ms, R =0,t p =10ms,T j =150 o C Thyristor-rectifier R =0,t p =10ms,T j =150 o C 1560 16200 12168 RRM Repetitive Peak Reverse oltage 1600 I T On-state T C =80 o C 180 A Surge Forward R =0,t p =10ms, 2500 A I TSM I 2 t (di/dt)cr (dv/dt)cr IGBT-brake R =0,t p =10ms,T j =150 o C I 2 t-value R =0,t p =10ms, R =0,t p =10ms,T j =150 o C Critical Rate of Rise of On-state f=50hz,i G =0.3A,di G /dt=0.3a/μs,t j =125 o C Critical Rate of Rise of On-State oltage D =0.67 RRM,T j =125 o C 2100 31250 22050 A 2 s A 2 s 150 A/μs 1000 /μs CES Collector-Emitter oltage 1200 GES Gate-Emitter oltage ±30 I C Collector @ T C =25 o C 200 @ T C =100 o C 100 A I CM Pulsed Collector t p =1ms 200 A P D Maximum Power Dissipation @ T j =175 o C 519 W Diode-brake RRM Repetitive Peak Reverse oltage 1200 I F Diode Continuous Forward 50 A I FM Diode Maximum Forward t p =1ms 100 A Module T jmax Maximum Junction Temperature(rectifier) 150 Maximum Junction Temperature(brake) 175 o C T jop Operating Junction Temperature -40 to +150 o C T STG Storage Temperature Range -40 to +125 o C ISO Isolation oltage RMS,f=50Hz,t=1min 4000 2014 STARPOWER Semiconductor Ltd. 10/18/2014 2/7 Preliminary
Rectifier Diode Characteristics T C =25 o C unless otherwise noted F Diode Forward T I oltage F =200A j =25 o C 1.25 T j =150 o C 1.20 (TO) Threshold oltage T j =150 o C 0.86 r T Forward Slope Resistance T j =150 o C 1.7 mω I R Diode Reverse T R = j =25 o C 0.1 RRM T j =150 o C 2.0 ma Thyristor Diode Characteristics T C =25 o C unless otherwise noted T Forward oltage I T =345A, 1.80 I R Diode Reverse T R = j =25 o C 0.10 RRM T j =125 o C 20.0 ma GT Gate Trigger D =12, 2.0 I GT Gate Trigger oltage D =12, 120 ma GD Gate Non-trigger D =0.67 RRM,T j =125 o C 0.25 I H Holding I T =1A, 250 ma I L Latching I G =1.2I GT, 300 ma 2014 STARPOWER Semiconductor Ltd. 10/18/2014 3/7 Preliminary
IGBT-brake Characteristics T C =25 o C unless otherwise noted I C =100A, GE =15, 1.70 2.15 CE(sat) Collector to Emitter Saturation oltage I C =100A, GE =15, T j =125 o C 1.95 I C =100A, GE =15, T j =150 o C 2.00 GE(th) Gate-Emitter Threshold oltage I C =4.0mA, CE = GE, 5.0 5.5 6.5 I CES Collector Cut-Off CE = CES, GE =0, 5.0 ma I GES Gate-Emitter Leakage GE = GES, CE =0, 400 na R Gint Internal Gate Resistance 2 Ω C ies Input Capacitance 9.90 nf CE =25,f=1MHz, Reverse Transfer C res GE =0 0.30 nf Capacitance Q G Gate Charge GE =15 0.60 μc t d(on) Turn-On Delay Time 280 ns t r Rise Time 54 ns t d(off) Turn-Off Delay Time 313 ns CC =600,I C =100A, t f Fall Time 232 ns R G =4.7Ω, GE =±15, Turn-On Switching E T j =25 o on C 3.50 mj E off Turn-Off Switching 7.35 mj t d(on) Turn-On Delay Time 281 ns t r Rise Time 56 ns t d(off) Turn-Off Delay Time 330 ns CC =600,I C =100A, t f Fall Time 379 ns R G =4.7Ω, GE =±15, Turn-On Switching E T j =125 o on C 5.15 mj E off Turn-Off Switching 11.3 mj t d(on) Turn-On Delay Time 285 ns t r Rise Time 56 ns t d(off) Turn-Off Delay Time 350 ns CC =600,I C =100A, t f Fall Time 390 ns R G =4.7Ω, GE =±15, Turn-On Switching E T j =150 o on C 5.60 mj E off Turn-Off Switching 13.0 mj I SC SC Data t P 10μs, GE =15, T j =150 o C, CC =900, CEM 1200 400 A 2014 STARPOWER Semiconductor Ltd. 10/18/2014 4/7 Preliminary
Diode-brake Characteristics T C =25 o C unless otherwise noted I Diode Forward C =50A, GE =0, 1.70 2.15 F I oltage C =50A, GE =0,T j =125 o C 1.65 I C =50A, GE =0,T j =150 o C 1.65 Q r Recovered Charge 3.0 μc Peak Reverse R =600,I F =50A, I RM 46 A Recovery -di/dt=1150a/μs, GE =-15 Reverse Recovery E rec 1.72 mj Energy Q r Recovered Charge 7.2 μc Peak Reverse R =600,I F =50A, I RM 56 A Recovery -di/dt=1150a/μs, GE =-15 Reverse Recovery T j =125 o C E rec 3.15 mj Energy Q r Recovered Charge 8.0 μc Peak Reverse R =600,I F =50A, I RM 59 A Recovery -di/dt=1150a/μs, GE =-15 Reverse Recovery T j =150 o C E rec 3.47 mj Energy Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit Junction-to-Case (per Diode-rectifier) 0.206 Junction-to-Case (per Thyristor-rectifier) 0.377 Junction-to-Case (per IGBT-brake) 0.289 K/W Junction-to-Case (per Diode-brake) 0.804 R thjc R thch Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per Thyristor-rectifier) Case-to-Heatsink (per IGBT-brake) Case-to-Heatsink (per Diode-brake) Case-to-Heatsink (per Diode-brake) 0.112 0.205 0.157 0.438 0.02 M Mounting Torque,Screw M5 3.0 6.0 N.m G Weight of Module 200 g K/W 2014 STARPOWER Semiconductor Ltd. 10/18/2014 5/7 Preliminary
Circuit Schematic 21 20 19 22,23,24,25 13,14 1,2,3 4,5,6 7,8,9 10,11,12 26,27,28,29 18 15,16,17 Package Dimensions Dimensions in Millimeters 25 25 18 17 29 1 12 13 2014 STARPOWER Semiconductor Ltd. 10/18/2014 6/7 Preliminary
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 2014 STARPOWER Semiconductor Ltd. 10/18/2014 7/7 Preliminary