P- 95032 SMPS MOSFET ppications High Frequency C-C Isoated Converters with Synchronous Rectification for Teecom and Industria use High Frequency Buck Converters for Computer Processor Power Lead-Free IRF7457PbF HEXFET Power MOSFET V SS R S(on) max I 20V 7.0mΩ 5 Benefits Utra-Low R S(on) Very Low Gate Impedance Fuy Characterized vaanche Votage and Current S S S G 8 2 7 3 6 4 5 Top View SO-8 bsoute Maximum Ratings Symbo Parameter Max. Units V S rain-source Votage 20 V V GS Gate-to-Source Votage ± 20 V I @ T = 25 C Continuous rain Current, V GS @ V 5 I @ T = 70 C Continuous rain Current, V GS @ V 2 I M Pused rain Current 20 P @T = 25 C Maximum Power issipationƒ 2.5 W P @T = 70 C Maximum Power issipationƒ.6 W Linear erating Factor 0.02 W/ C T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Symbo Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient 50 C/W Notes through are on page 8 www.irf.com /2/04
Static @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.023 V/ C Reference to 25 C, I = m 5.5 7.0 V GS = V, I = 5 ƒ R S(on) Static rain-to-source On-Resistance mω 8.0.5 V GS = 4.5V, I = 2 ƒ V GS(th) Gate Threshod Votage.0 3.0 V V S = V GS, I = 250µ 20 V µ S = 6V, V GS = 0V I SS rain-to-source Leakage Current 0 V S = 6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 V GS = 6V n Gate-to-Source Reverse Leakage -200 V GS = -6V ynamic @ T J = 25 C (uness otherwise specified) Symbo Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 30 S V S = 6V, I = 2 Q g Tota Gate Charge 28 42 I = 2 Q gs Gate-to-Source Charge 7 nc V S = V Q gd Gate-to-rain ("Mier") Charge 5 V GS = 4.5V, ƒ Q oss Output Gate Charge 25 38 V GS = 0V, V S = V t d(on) Turn-On eay Time 4 V = V, t r Rise Time 6 I = 2 ns t d(off) Turn-Off eay Time 6 R G =.8Ω t f Fa Time 7.5 V GS = 4.5V ƒ C iss Input Capacitance 30 V GS = 0V C oss Output Capacitance 600 V S = V C rss Reverse Transfer Capacitance 270 pf ƒ =.0MHz vaanche Characteristics Parameter Typ. Max. Units E S Singe Puse vaanche Energy 265 mj I R vaanche Current 5 iode Characteristics Symbo Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.5 (Body iode) showing the G I SM Pused Source Current integra reverse 20 (Body iode) p-n junction diode. S 0.8.3 V T J = 25 C, I S = 2, V GS = 0V ƒ V S iode Forward Votage 0.67 T J = 25 C, I S = 2, V GS = 0V t rr Reverse Recovery Time 50 75 ns T J = 25 C, I F = 2, V R = 5V Q rr Reverse Recovery Charge 70 5 nc di/dt = 0/µs ƒ t rr Reverse Recovery Time 50 75 ns T J = 25 C, I F = 2, V R =5V Q rr Reverse Recovery Charge 74 nc di/dt = 0/µs ƒ 2 www.irf.com
I, rain-to-source Current () 00 0 VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM2.7V 2.7V I, rain-to-source Current () 00 0 VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 2.7V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 00 0 T J = 50 C T J = 25 C V S= 5V 20µs PULSE WITH 0. 2.5 3.0 3.5 4.0 4.5 V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0 I = 5.5.0 0.5 V GS= V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 5000 4000 3000 2000 00 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTE V GS, Gate-to-Source Votage (V) 8 6 4 2 I = 2 V S = V C rss 0 0 V S, rain-to-source Votage (V) 0 0 20 30 40 50 60 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V 0. 0.2 0.8.4 2.0 2.6 V S,Source-to-rain Votage (V) I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) us 0us ms ms TC = 25 C TJ = 50 C Singe Puse 0. 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Fig 8. Maximum Safe Operating rea Forward Votage 4 www.irf.com
6 V S R I, rain Current () 3 6 3 Fig a. Switching Time Test Circuit V S 90% R G V GS V Puse Width µs uty Factor 0. %.U.T. + - V 0 25 50 75 0 25 50 T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Therma Response (Z thj ) 0. = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T 0.0 0.0000 0.000 0.00 0.0 0. 0 t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient www.irf.com 5
R S ( on ), rain-to-source On Resistance ( Ω ) IRF7457PbF 0.030 0.020 0.025 R S(on), rain-to -Source On Resistance (Ω) 0.08 0.020 VGS = 4.5V 0.06 0.05 0.0 0.04 0.02 0.0 I = 5 0.005 0.000 VGS = V 0 20 40 60 80 0 20 I, rain Current ( ) 0.008 0.006 3.0 3.5 4.0 4.5 5.0 5.5 V GS, Gate -to -Source Votage (V) Fig 2. On-Resistance Vs. rain Current Fig 4. On-Resistance Vs. Gate Votage Current Reguator Same Type as.u.t. 2V I S V GS.2µF 50KΩ 3m.3µF.U.T. I G I Current Samping Resistors + V - S V GS Fig 3a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)SS R G V S 20V V G tp Q GS L.U.T I S 0.0Ω Q G Q G Charge 5V RIVER + - V E S, Singe Puse vaanche Energy (mj) 700 600 500 400 300 200 0 TOP BOTTOM I 5.4 9.6 2 0 25 50 75 0 25 50 Starting T, Junction Temperature ( J C) Fig 4a&b. Uncamped Inductive Test circuit Fig 4c. Maximum vaanche Energy and Waveforms Vs. rain Current 6 www.irf.com
SO-8 Package Outine imensions are shown in miimeters (inches) E 6 6X 5 8 7 6 5 2 3 4 e B H 0.25 [.0] INCHES IM MIN MX.0532.0040.0688.0098 b.03.020 MILLIMETERS MIN MX.35.75 0. 0.25 0.33 0.5 c.0075.0098 0.9 0.25 E.89.497.968.574 4.80 3.80 5.00 4.00 e.050 BSIC.27 BSIC e.025 BSIC 0.635 BSIC H.2284.2440 5.80 6.20 K.0099.096 0.25 0.50 L.06.050 0.40.27 y 0 8 0 8 e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOT ES:. IMENSIONING & TOLERNCING PER SME Y4.5M-994. 2. CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS -02. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBS TRTE. 6.46 [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information (Lead-Free) EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 TE COE (YWW) P = ES IGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF T HE YER WW = WEE K = S S EMB LY S ITE COE LOT COE PRT NUMBER www.irf.com 7
SO-8 Tape and Ree TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 3.7mH R G = 25Ω, I S = 2. ƒ Puse width 300µs; duty cyce 2%. When mounted on inch square copper board, t< sec ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for saes contact information. /04 8 www.irf.com