MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking on product) MIX3WBTED D D3 D5 7 D7 T D 7 T3 D3 9 T5 D5 NTC 3 5 5 4 D D4 D 4 T7 D D4 D T 3 T4 T 9 E 773 3 4 Pin configuration see outlines. Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for µsec. - very low gate charge - low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting Temperature see included IXYS reserves the right to change limits, test conditio and dimeio. 9c IXYS ll rights reserved -
MIX3WBTED Ouput Inverter T - T Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage = 5 C GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 5 collector current T C = 5 C T C = C ± ±3 43 3 P tot total power dissipation T C = 5 C 5 W CE(sat) collector emitter saturation voltage = 5 ; GE = 5 = 5 C... GE(th) gate emitter threshold voltage = m; GE = CE = 5 C 5.4..5 ES collector emitter leakage current CE = CES ; GE = = 5 C...5 m m I GES gate emitter leakage current GE = ± 5 n Q G(on) total gate charge CE = ; GE = 5 ; = 5 7 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load CE = ; = 5 GE = ±5 ; R G = 39 W RBSO reverse bias safe operating area GE = ±5 ; R G = 39 W; CEK = 75 SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current 7 4 5.5 3. CE = 9 ; GE = ±5 ; R G = 39 W; non-repetitive µs thermal resistance junction to case (per IGBT).4 K/W Output Inverter D - D Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 5 C I F5 I F forward current T C = 5 C T C = C F forward voltage I F = 3 ; GE = = 5 C Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = di F /dt = - /µs I F = 3 ; GE =.95.95 3.5 3 35.9 44 3. µc thermal resistance junction to case (per diode). K/W T C = 5 C unless otherwise stated IXYS reserves the right to change limits, test conditio and dimeio. 9c IXYS ll rights reserved -
MIX3WBTED Brake T7 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage = 5 C GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 5 collector current T C = 5 C T C = C P tot total power dissipation T C = 5 C W CE(sat) collector emitter saturation voltage = 9 ; GE = 5 = 5 C.. ± ±3 7. GE(th) gate emitter threshold voltage =.3 m; GE = CE = 5 C 5.4..5 ES collector emitter leakage current CE = CES ; GE = = 5 C.. m m I GES gate emitter leakage current GE = ± 5 n Q G(on) total gate charge CE = ; GE = 5 ; = nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load CE = ; = GE = ±5 ; R G = W RBSO reverse bias safe operating area GE = ±5 ; R G = W; CEK = 3 SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current 7 4 5.. CE = 9 ; GE = ±5 ; R G = W; non-repetitive 4 µs thermal resistance junction to case (per IGBT). K/W Brake Chopper D7 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage = 5 C I F5 I F forward current T C = 5 C T C = C F forward voltage I F = 5 ; GE = = 5 C I R reverse current R = RRM = 5 C.5 Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = di F /dt = /µs I F = 5 ; GE =.95.95..5 m m µc thermal resistance junction to case (per diode) 3.4 K/W T C = 5 C unless otherwise stated. 35. IXYS reserves the right to change limits, test conditio and dimeio. 9c IXYS ll rights reserved 3 -
MIX3WBTED Input Rectifier Bridge D - D Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage = 5 C I F average forward current sine T C = C I DM max. average DC output current rect.; d = / 3 T C = C I FSM max. forward surge current t = ms; sine 5 Hz = 5 C I t I t value for fusing t = ms; sine 5 Hz = 5 C P tot total power dissipation T C = 5 C W F forward voltage I F = 5 = 5 C I R reverse current R = RRM = 5 C..34.34 37 5 3 5 39 s s.7. m m thermal resistance junction to case (per diode). K/W Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 5 resistance T C = 5 C 4.75 5. B 5/5 3375 5.5 kw K Module Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature -4-4 5 5 5 C C C ISOL isolation voltage I ISOL < m; 5/ Hz 5 ~ CTI comparative tracking index - M d mounting torque (M5) 3 Nm d S d creep distance on surface strike distance through air mm mm R pin-chip resistance pin to chip 5 R thch thermal resistance case to heatsink with heatsink compound. K/W Weight g Equivalent Circuits for Simulation I Symbol Definitio Conditio min. typ. max. Unit R R rectifier diode D - D3 = 5 C. 9 IGBT T - T = 5 C. R 55 free wheeling diode D - D = 5 C. R 7 IGBT T7 = 5 C. R 53 free wheeling diode D7 = 5 C.5 R 7 T C = 5 C unless otherwise stated IXYS reserves the right to change limits, test conditio and dimeio. 9c IXYS ll rights reserved 4 -
MIX3WBTED Circuit Diagram D D3 D5 D7 D D3 D5 T T3 T5 NTC 7 5 7 9 3 5 4 D D4 D 4 T7 D D4 D T T4 3 T 9 3 4 Outline Drawing Dimeio in mm ( mm =.394 ) Product Marking XXXXXXXXXX yywwx Logo UL Part name Date Code D Data Matrix: FOSS-ID digits Batch # digits Location Part number M = Module I = IGBT X = XPT = Standard 3 = Current Rating [] WB = -Pack + 3~ Rectifier Bridge & Brake Unit = Reverse oltage [] T = NTC ED = E-Pack Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX3WB TED MIX3WBTED Box 59 9 IXYS reserves the right to change limits, test conditio and dimeio. 9c IXYS ll rights reserved 5 -
MIX3WBTED Inverter T - T 5 4 GE = 5 5 4 GE = 5 7 9 3 [] 3 = 5 C [] 3 9 3 [] CE Fig. Typ. output characteristics 3 4 5 CE [] Fig. Typ. output characteristics 5 4 5 = 5 CE = [] 3 GE [] 5 = 5 C 5 7 9 3 GE [] Fig. 3 Typ. tranfer characteristics 4 Q G [nc] Fig. 4 Typ. turn-on gate charge E 5 4 [] 3 R G = 39 Ω CE = GE = ±5 3 4 5 [] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditio and dimeio. E on E off.5 E. [].5. 4 4 R G [Ω ] Fig. Typ. switching energy vs. gate resistance 9c IXYS ll rights reserved - 4. 3.5 3...5 E off E on = 5 CE = GE = ±5
MIX3WBTED Inverter D - D 5 7 R = 4 5 I F [] 3 = 5 C Q rr [µc] 4 3 3 5..5..5..5 3. Fig. 7 Typ. Forward current versus F 3 4 5 7 9 F [] di F /dt [/µs] Fig. Typ. reverse recov.charge Q rr vs. di/dt 7 7 R = R = 5 3 5 I RR [] 4 3 5 t rr [] 4 3 3 5 3 4 5 7 9 di F /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 3 4 5 7 9 di F /dt [/µs] Fig. Typ. recovery time t rr versus di/dt E rec... R = 3 Z thjc Diode IGBT []..4 5. 3 4 5 7 9 di F /dt [/µs] Fig. Typ. recovery energy E rec versus di/dt IXYS reserves the right to change limits, test conditio and dimeio. 4...94..... 9c IXYS ll rights reserved 7 - [K/W]. IGBT t p [s] FRD R i t i R i t i..5.343.5.4.3.7.3 3.3.3.3475.3 Fig. Typ. traient thermal impedance
MIX3WBTED Brake T7 & D7 GE = 5 = 5 C I F [] [] 4 4 = 5 C 3 CE [] Fig. 3 Typ. output characteristics..5..5..5 3. F [] Fig. 4 Typ. forward characteristics diode Z thjc IGBT R [K/W] [Ω] Inverter-IGBT Inverter-FRD R i t i R i t i.44..5..45.3.5.3 3.7.3.494.3 4.47..45..... t P [s] Fig. 5 Typ. traient thermal impedance 5 5 75 5 5 T C [ C] Fig. Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditio and dimeio. 9c IXYS ll rights reserved -