MMG8K12U6HN 12 8 IGBT Module June 215 ersion 1 RoHS Compliant PRODUCT FETURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) CE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses 5K Ω Gate Protected Resistance Iide PPLICTIONS High frequency switching application Medical applicatio Motion/servo control UPS systems BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues CES Collector Emitter oltage T J = 12 GES Gate Emitter oltage ±2 I C DC Collector Current T C = 15 T C =75 8 I CM Repetitive Peak Collector Current tp=1ms 16 P tot Power Dissipation Per IGBT 395 W BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues RRM Repetitive Reverse oltage T J = 12 I F() verage Forward Current T C = 8 I FRM Repetitive Peak Forward Current tp=1ms 16 I 2 t, t=1ms, R = 512 2 S MacMic Science & Technology Co., Ltd. dd:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.:+86-519-8516378 Fax:+86-519-85162291 Post Code:21322 Website:www.macmicst.com 1
MMG8K12U6HN ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. GE(th) Gate Emitter Threshold oltage CE = GE, I C =32m 5.4 6. 6.5 CE(sat) Collector Emitter Saturation oltage I C =8, GE =15, T J = 2.1 2.5 I C =8, GE =15, 2.5 I CES Collector Leakage Current CE =12, GE =, T J = 1 CE =12, GE =, 1 I GES Gate Leakage Current CE =, GE =±15, T J = -4 4 R gint Integrated Gate Resistor 1 Q g Gate Charge CE =6, I C =8, GE =15 3.8 C ies Input Capacitance 5 CE =25, GE =, f =1MHz C res Reverse Trafer Capacitance 2.8 T J = 25 t d(on) Turn on Delay Time CC =6,I C =8 R G =1.Ω, GE =±15, t r Rise Time t d(off) Turn off Delay Time CC =6,I C =8 R G =1.Ω, GE =±15, t f Fall Time E on E off I SC Turn on Energy Turn off Energy Short Circuit Current CC =6,I C =8 R G =1.Ω, GE =±15, tpsc 1µS, GE =15, CC =6 32 T J =15 34 T J = 9 95 T J =15 1 T J = 55 65 T J =15 7 T J = 6 8 T J =15 9 65 T J =15 7 5 T J =15 55 m m n Ω µc nf nf 32 R thjc Junction to Case Thermal Resistance ( Per IGBT).38 K /W ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. F Forward oltage I F =8, GE =, T J = 2.25 2.6 I F =8, GE =, 2.25 t rr Reverse Recovery Time I F =8, R =6 45 I RRM Max. Reverse Recovery Current di F /dt=-8/μs 72 Q RR Reverse Recovery Charge 95 E rec Reverse Recovery Energy 4 R thjcd Junction to Case Thermal Resistance ( Per Diode).65 µc K /W 2
MMG8K12U6HN MODULE CHRCTERISTICS Symbol Parameter/Test Conditio alues T Jmax Max. Junction Temperature 175 T Jop Operating Temperature -4~15 T stg Storage Temperature -4~125 isol Isolation Breakdown oltage C, 5Hz(R.M.S), t=1minute 3 to heatsink Recommended(M6) 3~5 Torque to terminal Recommended(M6) 2.5~5 to terminal Recommended(M4).7~1.1 Weight 33 g 16 12 1 16 12 ge=17 ge=15 ge=13 ge=1 8 8 ge=8 4 4 1 2 3 4 CE () Figure 1. Typical Output Characteristics 1 2 3 4 5 CE () Figure 2. Typical Output Characteristics 16 12 8 4 CE =2 1 E on E off () 5 4 3 2 1 CE =6 I C =8 GE =±15 Eon Eoff 6 7 8 9 1 11 12 13 2 4 6 8 1 GE () Rg(Ω) Figure 3. Typical Trafer Characteristics Figure 4. Switching Energy vs Gate Resistor 3
MMG8K12U6HN E on E off () 15 125 1 75 5 CE =6 R g =1.Ω GE =±15 Eon Eoff 18 15 12 9 6 R g =1.Ω GE =±15 25 3 4 8 12 16 2 4 6 8 1 12 14 CE () Figure 5. Switching Energy vs Collector Current Figure 6. Reverse Biased Safe Operating rea 12 1 9 75 8 6 DC 6 45 DC 4 3 2 15 25 5 75 1 125 15 175 T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter 25 5 75 1 125 15 175 T C ( ) Figure 8. Forward current vs Case temperature 16 12 8 4 1 E REC () 6 5 4 3 2 1 CE =6 I F =8 1 2 3 F () 1 2 3 4 5 Rg(Ω) Figure 9. Diode Forward Characteristics Figure 1. Switching Energy vs Gate Resistor 4
MMG8K12U6HN 7 1 E REC () 6 5 4 3 2 1 CE =6 R g =1.Ω Z thjc (K/W).1.1 IGBT DIODE 2 4 6 8 1 12.1.1.1.1 1 1 Rectangular Pulse Duration (s) Figure 11. Switching Energy vs Forward Current Figure 12. Traient Thermal Impedance of and Dimeio in (mm) Figure 13. Package Outline 5