V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = 15 1 3 A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability Blocking Parameter Symbol Conditions Value Unit Repetetive peak reverse voltage V RRM f = 5 Hz, t p = 1ms, T j = -4...16 C 28 V Non - repetetive peak reverse voltage V RSM f = 5 Hz, t p = 1ms, T j = -4...16 C 3 V Max. (reverse) leakage current I RRM V RRM, Tj = 16 C 3 ma Mechanical data Mounting force F M 8 1 12 kn Acceleration a Device unclamped 5 m/s 2 Acceleration a Device clamped 1 m/s 2 Weight m.3 kg Housing thickness H F M = 1 kn, T a = 25 C 25.5 26.5 mm Surface creepage distance D S 33 mm Air strike distance D a 18 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
5SDD 11D28 On-state Max. average on-state current I F(AV)M 5 Hz, Half sine wave, T C = 85 C 1285 A Max. RMS on-state current I F(RMS) 219 A Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral I FSM t p = 1 ms, T j = 16 C, 15 1 3 A V R = V I 2 t 1.125 1 6 A 2 s I FSM t p = 8.3 ms, T j = 16 C, 16 1 3 A V R = V I 2 t 1.66 1 6 A 2 s On-state voltage V F I F = 15 A, T j = 16 C 1.3 V Threshold voltage V (T) T j = 16 C.933 V Slope resistance I T = 15...45 A.242 mω r T Switching Recovery charge Q rr di F /dt = -3 A/µs, V R = 1 V I FRM = 1 A, T j = 16 C 22 3 µas Doc. No. 5SYA1166- Okt. 3 page 2 of 6
5SDD 11D28 Thermal Operating junction temperature range T vj -4 16 C Storage temperature range T stg -4 175 C Thermal resistance junction to case Thermal resistance case to heatsink R th(j-c) R th(j-c)a R th(j-c)c R th(c-h) R th(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 32 K/kW 5 K/kW 88 K/kW 8 K/kW 16 K/kW Z Analytical function for transient thermal impedance: th(j-c) (t) = n i= 1 R th i (1- e -t/ τ i i 1 2 3 4 R th i (K/kW) 11.6 1.11 7.87 2.41 τ i (s).733.2185.588.42 ) Fig. 1 Transient thermal impedance junction-tocase. Doc. No. 5SYA1166- Okt. 3 page 3 of 6
5SDD 11D28 I F ( A ) 9 8 7 6 25 C 16 C I FSM ( ka ) 3 25 2 I FSM 25 C 16 C i 2 dt 25 C 3 2,5 2 i 2 dt (1 6 A 2 s) 5 4 15 16 C 1,5 3 1 1 2 1 5,5 1 2 3 V F ( V ) 1 1 t ( ms ) 1 Fig. 2 Max. on-state characteristics. Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, V R = V PT ( W ) 25 2 6 12 18 P T ( W ) 25 2 ψ = 3 6 9 12 18 27 15 15 1 1 5 5 4 8 12 16 5 1 15 Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 5 Hz Fig. 5 Forward power loss vs. average forward current, square waveform, f = 5 Hz Doc. No. 5SYA1166- Okt. 3 page 4 of 6
5SDD 11D28 TC ( C ) 17 16 15 TC ( C ) 17 16 15 14 14 13 13 12 12 11 11 1 1 9 8 9 8 27 7 6 6 12 18 4 8 12 16 7 6 18 ψ = 3 6 9 12 4 8 12 16 Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 5 Hz 1 Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 5 Hz 1 Qrr ( µc ) IrrM ( A ) 1 max 1 max min min 1 1 1 di F /dt ( A/µs ) 1 1 1 1 di F /dt ( A/µs ) 1 Fig. 8 Reverse recovery charge vs. di F /dt, I F = 1 A; T j = T jmax, limit values Fig. 9 Peak reverse recovery current vs. di F /dt, I F = 1 A; T j = T jmax, limit values Doc. No. 5SYA1166- Okt. 3 page 5 of 6
5SDD 11D28 Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr Titel 5SYA 22 5SYA 229 Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes 5SYA 236 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd Doc. No. 5SYA1166- Okt. 3 Semiconductors Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Telephone +41 ()58 586 1419 Fax +41 ()58 586 136 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors