NTDN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Smaller Package than MTBN6VL Lower R DS(on), V DS(on), and Total ate Charge Lower and Tighter V SD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge PbFree Packages are Available Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit tosource Voltage V DSS 6 toate Voltage (R S = M ) V DR 6 atetosource Voltage Continuous NonRepetitive (t p ms) Current Continuous @ T A = 5 C Continuous @ T A = C Single Pulse (t p s) Total Power Dissipation @ T A = 5 C Derate above 5 C Total Power Dissipation @ T A = 5 C (Note ) Total Power Dissipation @ T A = 5 C (Note ) V S V S I D I D I DM 9 P D 9.75.65.88.5 Operating and Storage Temperature Range T J, T stg 55 to +75 Single Pulse tosource Avalanche Energy Starting T J = 5 C (Note ) (V DD = 5, V S = 5, L =. mh, I L(pk) = 5 A, V DS = 6, R = 5 ) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note ) JunctiontoAmbient (Note ) Maximum Lead Temperature for Soldering Purposes, /8 in from case for seconds Adc Apk W W/ C W W C E AS mj R JC R JA R JA.6 5 C/W T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. When surface mounted to FR board using.5 in pad size.. When surface mounted to FR board using minimum recommended pad size.. Repetitive rating; pulse width limited by maximum junction temperature. Y WW N6L V DSS R DS(ON) TYP I D MAX 6 V.7 m A NChannel D CASE 69C (Surface Mount) STYLE CASE 69D (Straight Lead) STYLE MARKIN DIARAMS & PIN ASSINMENTS ate ate YWW N N6L YWW N N6L = Year = Work Week = Device Code = PbFree Package Source Source ORDERIN INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. S Semiconductor Components Industries, LLC, 7 June, 7 Rev. 5 Publication Order Number: NTDN6L/D
NTDN6L ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS tosource Breakdown Voltage (Note ) V (BR)DSS (V S =, I D = 5 Adc) Temperature Coefficient (Positive) 6 7 6 mv/ C Zero ate Voltage Current (V DS = 6, V S = ) (V DS = 6, V S =, T J = 5 C) I DSS atebody Leakage Current (V S = ±, V DS = ) I SS ± nadc ON CHARACTERISTICS (Note ) ate Threshold Voltage (Note ) (V DS = V S, I D = 5 Adc) Threshold Temperature Coefficient (Negative) Static tosource OnResistance (Note ) (V S = 5, I D = 6 Adc) Static tosource OnResistance (Note ) (V S = 5, I D = Adc) (V S = 5, I D = Adc) (V S = 5, I D = 6 Adc, T J = 5 C) V S(th)..7.8.. R DS(on).7 8 V DS(on) Forward Transconductance (Note ) (V DS = 6, I D = 6 Adc) g FS 7 mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 7 pf Output Capacitance (V DS = 5, V S =, f =. MHz) C oss 8 Transfer Capacitance C rss 87 8 SWITCHIN CHARACTERISTICS (Note 5) TurnOn Delay Time t d(on).8 ns Rise Time (V DD =, I D = Adc, t r 5 V S = 5, TurnOf f Delay Time R = 9. ) (Note ) t d(off) 7 8 Fall Time t f 8 6 ate Charge Q T 5 nc (V DS = 8, I D = Adc, V S = 5 ) (Note ) Q.5 Q SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I S = Adc, V S = ) (Note ) (I S = Adc, V S = ) (Note ) (I S = Adc, V S =, T J = 5 C) V SD.89.95.7. Reverse Recovery Time (I S = Adc, V S =, di S /dt = A/ s) (Note ).8.78.6.67 Adc mv/ C m t rr 56 ns t a t b 5 Reverse Recovery Stored Charge Q RR.9 C. Pulse Test: Pulse Width s, Duty Cycle %. 5. Switching characteristics are independent of operating junction temperatures. ORDERIN INFORMATION Device Package Shipping NTDN6L 75 Units / Rail NTDN6L 75 Units / Rail (PbFree) NTDN6L (Straight Lead) 75 Units / Rail NTDN6L (Straight Lead) 75 Units / Rail (PbFree) NTDN6LT 5 Units / Tape & Reel NTDN6LT (PbFree) 5 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
NTDN6L 6 5 V S = V V S = 5 V V S = 6 V V S = 8 V V S =.5 V V S = V V S =.5 V V S = V 6 V DS > = V 5 T J = 5 C T J = C T J = 55 C.8..6..8..6 5 V DS, DRAINTOSOURCE VOLTAE (VOLTS) V S, ATET OSOURCE VOLTAE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( )..8...6..8.. V S = 5 V T J = C T J = 5 C T J = 55 C 5 6 Figure. OnResistance vs. Current R DS(on), DRAINTOSOURCE RESISTANCE ( )..8...6..8. V S = V T J = C T J = 5 C T J = 55 C. 5 6 Figure. OnResistance vs. Current R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED).8.6...8 I D = 6 A V S = 5 V.6 5 5 5 5 75 5 T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation with Temperature 5 75 I DSS, LEAKAE (na) V S = V T J = 5 C T J = 5 C T J = C 5 6 V DS, DRAINTOSOURCE VOLTAE (VOLTS) Figure 6. tosource Leakage Current vs. Voltage
NTDN6L C, CAPACITANCE (pf) t, TIME (ns) 6 V DS = V V S = V T J = 5 C 6 Q T 5 V C S iss 8 Q Q C rss 6 C iss 8 C oss I D = A C rss T J = 5 C 5 V S V DS 5 5 5 8 6 ATET OSOURCE OR DRAINTOSOURCE VOLTAE Q g, TOTAL ATE CHARE (nc) (VOLTS) Figure 7. Capacitance Variation Figure 8. atetosource and tosource Voltage vs. Total Charge t d(on).6.6.68.7.76.8.8.88.9.96 V DS = V I D = A V S = 5 V t r t f t d(off) R, ATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. ate Resistance V V S 5 V SINLE PULSE T C = 5 C dc ms ms ms s Figure. Maximum Rated Forward Biased Safe Operating Area V S, ATET OSOURCE VOLTAE (VOLTS) I S, SOURCE CURRENT (AMPS) E AS, SINLE PULSE DRAINTOSOURCE AVALANCHE ENERY (mj) 8 6 8 5 5 5 V S = V T J = 5 C V SD, SOURCETODRAIN VOLTAE (VOLTS) Figure. Diode Forward Voltage vs. Current I D = A R DS(on) Limit Thermal Limit 5 Package Limit.. 5 5 75 5 5 75 V DS, DRAINTOSOURCE VOLTAE (VOLTS) T J, STARTIN JUNCTION TEMPERATURE ( C) Figure. Maximum Avalanche Energy vs. Starting Junction Temperature
NTDN6L r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED). Normalized to R JC at Steady State...... t, TIME (s) Figure. Thermal Response r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED). Normalized to R JA at Steady State, square Cu Pad, Cu Area.7 in, x inch FR board...... t, TIME (s) Figure. Thermal Response 5
NTDN6L PACKAE DIMENSIONS CASE 69C ISSUE O B C T SEATIN PLANE NOTES:. DIMENSIONIN AND TOLERANCIN PER ANSI Y.5M, 98.. CONTROLLIN DIMENSION: INCH. V S F R L A K D PL J H. (.5) M T E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A.5.5 5.97 6. B.5.65 6.5 6.7 C.86.9.9.8 D.7.5.69.88 E.8..6.58 F.7.5.9..8 BSC.58 BSC H...87. J.8..6.58 K...6.89 L.9 BSC.9 BSC R.8.5.57 5.5 S.5..6. U..5 V.5.5.89.7 Z.55.9 STYLE : PIN. ATE. DRAIN. SOURCE. DRAIN SOLDERIN FOOTPRINT* 6...58...8 5.8.8.6.6 6.7. SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6
NTDN6L PACKAE DIMENSIONS CASE 69D ISSUE B V B R C E NOTES:. DIMENSIONIN AND TOLERANCIN PER ANSI Y.5M, 98.. CONTROLLIN DIMENSION: INCH. S T SEATIN PLANE F A K D PL J. (.5) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A.5.5 5.97 6.5 B.5.65 6.5 6.7 C.86.9.9.8 D.7.5.69.88 E.8..6.58 F.7.5.9..9 BSC.9 BSC H...87. J.8..6.58 K.5.8 8.89 9.65 R.8.5.5 5.5 S.5..6. V.5.5.89.7 Z.55.9 STYLE : PIN. ATE. DRAIN. SOURCE. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERIN INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: 67575 or 886 Toll Free USA/Canada Fax: 67576 or 8867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 857785 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTDN6L/D