dvanced Technical Information MI15WDTMH Converter - Inverter Module NT IGBT Single hase Rectifier Three hase Inverter RRM = 1 CES = I DM5 = 5 I C5 = 3 I FSM = 55 CE(sat) =.1 art name (Marking on product) MI15WDTMH 1 D D1 T1 T3 T5 D1 D3 D5 NTC1 G1 G3 G5 L1 L D9 D11 NTC U W T T T D D D G G G E 773 in configuration see outlines. N EU E EW Features: High level of integration - only one power semiconductor module required for the whole drive Inverter with NT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current Epitaxial free wheeling diodes with hiperfast soft reverse recovery Temperature see included pplication: C motor drives umps, Fa Washing machines ir-conditioning system Inverter and power supplies ackage: "Mini" package ssembly height is 17 mm Iulated base plate i suitable for wave soldering and CB mounting ssembly clips available - IXKU 5-55 screw clamp - IXRB 5-5 click clamp UL registered E773 IXYS reserves the right to change limits, test conditio and dimeio. 7531a 7 IXYS ll rights reserved - 7
dvanced Technical Information MI15WDTMH Ouput Inverter T1 - T Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 15 C GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C5 collector current T C = 5 C I C T C = C tot total power dissipation T C = 5 C W CE(sat) collector emitter saturation voltage I C = 15 ; GE = 15 T J = 5 C T J = 15 C.1.3 ± ±3 3 1.5 GE(th) gate emitter threshold voltage I C =. ; GE = CE T J = 5 C.5 5.5.5 I CES collector emitter leakage current CE = CES ; GE = T J = 5 C T J = 15 C 1.. m m I GES gate emitter leakage current GE = ± 15 n C ies input capacitance CE = 5 ; GE = ; f = 1 MHz 7 pf Q G(on) total gate charge CE = 3 ; GE = 15 ; I C = 15 57 nc t d(on) t r t d(off) t f E on E off t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T J = 5 C CE = 3 ; I C = 15 GE = ±15 ; R G = W inductive load T J = 15 C CE = 3 ; I C = 15 GE = ±15 ; R G = W RBSO reverse bias safe operating area GE = ±15 ; R G = W; I C = 3 T J = 15 C CEK < CES -L S d I /dt I SC short circuit safe operating area CE = 3 ; GE = ±15 ; T J = 15 C 5 (SCSO) R G = W; t p = 1 µs; non-repetitive R thjc R thch thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 5 155 95.35.7 5 1 1.55..55 1. K/W K/W Output Inverter D1 - D IXYS reserves the right to change limits, test conditio and dimeio. Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage T J = 15 C I F5 I F forward current T C = 5 C T C = C F forward voltage I F = 15 ; GE = T J = 5 C T J = 15 C Q rr reverse recovery charge I RM max. reverse recovery current R = 3 di t rr reverse recovery time F /dt = -3 /µs I E rec reverse recovery energy F = 15 ; GE = T J = 15 C R thjc thermal resistance junction to case (per diode) R thch thermal resistance case to heatsink 7531a 7 IXYS ll rights reserved - 7 1. 1.3.5 11.5 115 5.55 T C = 5 C unless otherwise stated 37.1 µc µj 1. K/W K/W
dvanced Technical Information MI15WDTMH Input Rectifier Bridge D - D11 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage T J = 5 C 1 I F I DM average forward current max. average DC output current sine 1 T C = C rect.; d = ½ T C = C I FSM max. forward surge current t = 1 ms; sine 5 Hz T J = 5 C T J = 15 C I t I t value for fusing t = 1 ms; sine 5 Hz T J = 5 C T J = 15 C tot total power dissipation T C = 5 C 1 W F forward voltage I F = 3 T J = 5 C T J = 15 C I R reverse current R = RRM T J = 5 C T J = 15 C.3 R thjc thermal resistance junction to case (per diode) R thch thermal resistance case to heatsink (per diode). 1. 1.3 39 55 tbd 17 tbd s s 1.5.3 m m 1. K/W K/W Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 5 resistance T C = 5 C.75 5. B 5/5 3375 5.5 kw K Module Symbol Definitio Conditio min. typ. max. Unit T J T JM T stg operating temperature max. virtual junction temperature storage temperature - - 15 15 15 C C C ISOL isolation voltage I ISOL < 1 m; 5/ Hz 5 ~ CTI comparative tracking index - F C mounting force N d S d creep distance on surface strike distance through air Weight 35 g Equivalent Circuits for Simulation 1.7 1 mm mm I Symbol Definitio Conditio min. typ. max. Unit R R rectifier diode D - D11 T J = 15 C.9 IGBT T1 - T T J = 15 C 1.15 R 77 free wheeling diode D1 - D T J = 15 C 1.5 R 3 T C = 5 C unless otherwise stated mw mw mw IXYS reserves the right to change limits, test conditio and dimeio. 7531a 7 IXYS ll rights reserved 3-7
dvanced Technical Information MI15WDTMH Circuit Diagram 1 D D1 T1 T3 T5 D1 D3 D5 NTC1 G1 G3 G5 L1 L D9 D11 NTC U W T T T D D D G G G N EU E EW Outline Drawing Dimeio in mm (1 mm =.39 ),5 ±,5 7 ±,35 Ø 55,9,,5,5 ±,35 1,51 7,9,37,13,3 35,5 31,75,,5 5,, 3, 39, 5, 1 G1 U ( : ),,,35 31,75, 19,5 17,7 1,1 EW E EU G G G NTC1 G3 3, in positio with tolerance Ø. N L1 L1 L L NTC,, N G5 W roduct Marking art number M = Module I = IGBT = IGBT (NT) = Gen 1 / std 15 = Current Rating [] WD = -ack + 1~ Rectifier Bridge = Reverse oltage [] T = NTC MH = Miniack Ordering art Name Marking on roduct Delivering Mode Base Qty Ordering Code Standard MI 15 WD TMH MI15WDTMH Box 59 IXYS reserves the right to change limits, test conditio and dimeio. 7531a 7 IXYS ll rights reserved - 7
dvanced Technical Information MI15WDTMH 3 5 C 15 C 3 ge= 19 ge= 17 ge= 15 ge= 13 ge= 11 ge= 9 1 1 Ic [] 1 1 Ic [] 1 1 1 1 1 1... 1. 1.... 3. 3. ce [] Typical output characteristics, GE = 15..5 1. 1.5..5 3. 3.5. ce [] Typical output characteristics (15 C) 3 5 C 15 C 3 5 C 15 C 1 1 Ic [] 1 1 If [] 1 1 1 1 1 1 5 7 9 1 11 1 13 1 ge [] Typical trafer characteristics..... 1. 1. 1. 1. 1... f [] Typical forward characteristics of freewheeling diode IXYS reserves the right to change limits, test conditio and dimeio. 7531a 7 IXYS ll rights reserved 5-7
dvanced Technical Information MI15WDTMH ge [[] 1 17 1 15 1 13 1 11 1 9 7 5 3 1 Ic = 15 ce = 3 5 1 15 5 3 35 5 5 55 5 7 Qg [nc] Typical turn on gate charge E [] 1. 1. 1. 1. 1.... Eon Eoff Erec ce = 3 ge = +/-15 Rg = W Tvj = 15 C 1 1 1 1 1 3 Ic, If [] Typical switching energy versus collector current 1. 1.3 1. Eon Eoff Erec 1 11.5 11 Irr trr 33 W If = 15 ce = 3 ge = +/-15 Tvj = 15 C W 1 175 17 1.1 1.9 Ic, If = 15 ce = 3 ge = +/-15 Tvj = 15 C 1.5 1 9.5 15 1 155. 9 15 E [].7. Irr [].5 15 W 15 1 trr [].5 7.5 135. 7 13.3.5 15..1 5.5 33 W W 1 115 5 75 1 15 15 175 5 5 75 3 35 35 Rg [W ] Typical switching energy versus gate resistance 5 11 1 15 5 3 35 dif/dt [/µs] Typical turn-off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditio and dimeio. 7531a 7 IXYS ll rights reserved - 7
dvanced Technical Information MI15WDTMH.7 1.5..55.5.5 1 Qrr [µc]..35.3 Rnom [ W ].5..15.1.5 5 1 15 5 3 35 If [] ce = 3 ge = +/-15 Rg = W Tvj = 15 C Typical turn-off characteristics of free wheeling diode 1 1 5 5 75 1 15 15 T [ C] Typical thermistor resistance versus temperature IXYS reserves the right to change limits, test conditio and dimeio. 7531a 7 IXYS ll rights reserved 7-7