Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold: V (typ.) Low Input apacitance: pf Fast Switching Speed: ns (typ.) Low Input and Output Leakage ESD Protected: V Miniature Package ompliant to RoHS Directive /9/E S G S-89 6 D G Marking ode: E BENEFITS Low Offset Voltage Low-Voltage Operation High-Speed ircuits Low Error Voltage Small Board Area D S Top View Ordering Information: Si6X-T-GE (Lead (Pb)-free and Halogen-free) APPLIATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays ABSOLUTE MAXIMUM RATINGS (T A =, unless otherwise noted) Parameter Symbol s Steady State Unit Drain-Source Voltage V DS 6 V Gate-Source Voltage V GS ± ontinuous Drain urrent (T J = ) a T A = I D T A = 8 ma Pulsed Drain urrent b I DM - 6 ontinuous Source urrent (Diode onduction) a I S 8 Maximum Power Dissipation a T A = 8 P D T A = 8 mw Operating Junction and Storage Temperature Range T J, T stg - to Gate-Source ESD Rating (HBM, Method ) ESD V Notes: a. Surface mounted on FR board. b. Pulse width limited by maximum junction temperature. Document Number: 7 S--Rev. D, -Oct-
Si6X SPEIFIATIONS (T J =, unless otherwise noted) Parameter Symbol Test onditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = µa 6 V Gate Threshold Voltage V GS(th) V DS = V GS, I D =. ma. V DS = V, V GS = ± V ± Gate-Body Leakage I GSS na V DS = V, V GS = ± V ± V DS = 6 V, V GS = V µa Zero Gate Voltage Drain urrent I DSS V DS = 6 V, V GS = V, T J = 8 On-State Drain urrent a I D(on) Notes: a. Pulse test; pulse width µs, duty cycle %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. V DS = V, V GS =. V V DS = 7. V, V GS = V 8 Drain-Source On-Resistance a R DS(on) V GS = V, I D = ma. V GS =. V, I D = ma. V GS = V, I D = ma, T J =. Forward Transconductance a g fs V DS = V, I D = ma ms Diode Forward Voltage a V SD V GS = V, I S = ma. V Dynamic b Total Gate harge Q g 6 Gate-Source harge Q gs V DS = V, I D = ma, V GS =. V p Gate-Drain harge Q gd Input apacitance iss V DS = V, V GS = V, Output apacitance oss 6 f = MHz Reverse Transfer apacitance rss pf Switching b, c Turn-On Time t (on) V DD = V, R L = Turn-Off Time t (off) I D = ma, V GEN = V, R g = ma ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 7 S--Rev. D, -Oct-
Si6X TYPIAL HARATERISTIS (, unless otherwise noted). V GS = V thru 7 V 6 V T J = - I D - Drain urrent (A).8.6.. V V I D - Drain urrent (ma) 9 6 V. V DS - Drain-to-Source Voltage (V) Output haracteristics 6 V GS - Gate-to-Source Voltage (V) Transfer haracteristics. - On-Resistance (Ω) R DS(on)...... V GS =. V V GS = V - apacitance (pf) V GS = V f = MHz oss iss.. 6 8 I D - Drain urrent (ma) On-Resistance vs. Drain urrent 7 rss V DS - Drain-to-Source Voltage (V) apacitance. - Gate-to-Source Voltage (V) 6 V DS = V I D = ma (Normalized) - On-Resistance R DS(on).6..8 V GS = V at ma V GS =. V at ma V GS........6 Q g - Total Gate harge (n) Gate harge. - - 7 T J - Junction Temperature ( ) On-Resistance vs. Junction Temperature Document Number: 7 S--Rev. D, -Oct-
Si6X TYPIAL HARATERISTIS (, unless otherwise noted) V GS = V - Source urrent (A) I S T J = T J = T J = - - On-Resistance (Ω) R DS(on) I D = ma I D = ma..6.9.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. Variance (V) V GS(th). - -. -. I D = µa -.6 -.8 - - 7 T J - Junction Temperature ( ) Threshold Voltage Variance Over Temperature Normalized Effective Transient Thermal Impedance. Duty ycle =..... t t t. Duty ycle, D = t. Per Unit Base = R thja = /W. T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted. - - - - 6 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7. Notes: P DM Document Number: 7 S--Rev. D, -Oct-
Package Information S-89 6-Leads (SOT-6F) E/ A D e x aaa D B 6 SETION B-B E/ 6 E E x aaa DETAIL A x bbb e B 6x b ddd M A B D L A L A A SEE DETAIL A Notes. Dimensions in millimeters.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed. mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed. mm per side.. Dimensions D and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. Datums A, B and D to be determined. mm from the lead tip.. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between.8 mm and. mm from the lead tip. DIM. MILLIMETERS MIN. NOM. MAX. A.6.8.6 A.. b... c...8 D..6.7 E..6.7 E... e... e.9.. L... L... -9-Rev., -Aug- DWG: 88 Revision: -Aug- Document Number: 76 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOUMENT IS SUBJET TO HANGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN AND THIS DOUMENT ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT /doc?9
Application Note 86 REOMMENDED MINIMUM PADS FOR S-89: 6-Lead. (.).69 (.7). (.798).9 (.78). (.). (.). (.) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLIATION NOTE Document Number: 76 Revision: -Jan-8
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