UB7-NOXT Sandard ecifier Module 3~ ecifier Bridge + Brake Uni + NT M = I = 7 D SM = I 3~ ecifier Brake hopper ES = I = 8 E(sa) =.8 Par number UB7-NOXT Backside: isolaed NT ~ 7~ 9~ eaures / dvanages: pplicaions: Package: --Pack Package wih DB ceramic base plae Improved emperaure and power cycling Planar passivaed chips ery low forward volage drop ery low leakage curren NT 3~ ecifier wih brake uni for drive inverers Isolaion olage: 3 ~ Indusry sandard ouline ohs complian Soldering pins for PB mouning Heigh: 7 mm Base plae: DB ceramic educed weigh dvanced power cycling Terms and ondiions of Usage The daa conained in his produc daa shee is exclusively inended for echnically rained saff. The user will have o evaluae he suiabiliy of he produc for he inended applicaion and he compleeness of he produc daa wih respec o his applicaion. The specificaions of our componens may no be considered as an assurance of componen characerisics. The informaion in he valid applicaion- and assembly noes mus be considered. Should you require produc informaion in excess of he daa given in his produc daa shee or which concerns he specific applicaion of your produc, please conac your local sales office. Due o echnical requiremens our produc may conain dangerous subsances. or informaion on he ypes in quesion please conac your local sales office. Should you inend o use he produc in aviaion, in healh or life endangering or life suppor applicaions, please noify. or any such applicaion we urgenly recommend - o perform join risk and qualiy assessmens; - he conclusion of qualiy agreemens; - o esablish join measures of an ongoing produc survey, and ha we may make delivery dependen on he realizaion of any such measures. IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d
UB7-NOXT ecifier Symbol SM M I I Definiion = = T = aings yp. max. 3 forward volage drop I =. T = hermal resisance juncion o case. K/W D max. non-repeiive reverse blocking volage reverse curren I = ondiions hreshold volage T =.79 for power loss calculaion only r slope resisance 7.7 mω hj hh max. repeiive reverse blocking volage bridge oupu curren hermal resisance case o heasink = 7 = 7 recangular d = ⅓ P o oal power dissipaion W T SM max. forward surge curren = ms; ( Hz), sine T = = 8,3 ms; ( Hz), sine = = ms; ( Hz), sine = 8,3 ms; ( Hz), sine J juncion capaciance = ; f = MHz 9 T = I² value for fusing = ms; ( Hz), sine T = = 8,3 ms; ( Hz), sine = ms; ( Hz), sine = 8,3 ms; ( Hz), sine T = T = = = = min..3..38..37 7 Uni µ m K/W k²s k²s k²s k²s p.8.7.3. IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d
UB7-NOXT Brake IGBT Symbol ES GES GEM 8 Definiion collecor emier volage collecor curren ondiions T max. P o oal power dissipaion T = 9 W E(sa) collecor emier sauraion volage = 3 ; GE = T =.8. GE(h) gae emier hreshold volage I = m; = ES collecor emier leakage curren = ; = I GES BSO max. D gae volage max. ransien gae emier volage min. aings yp. 8 Uni. urn-on delay ime 7 ns reverse bias safe operaing area GE E E ES GE gae emier leakage curren = ± GE T = 8 T T...9 ± ±3. m. m QG(on) oal gae charge E = ; GE = ; = 3 n E E d(on) r d(off) f on off M SSO S curren rise ime urn-off delay ime curren fall ime urn-on energy per pulse urn-off energy per pulse shor circui safe operaing area shor circui duraion inducive load = ; I = 3 E = ± ; = 7 Ω GE = ± ; = 7 Ω GE EK = EK = = 9 ; = ± E G G GE T ns ns ns 3.8 mj. mj I shor circui curren S G = 7 Ω; non-repeiive hj hh hermal resisance juncion o case hermal resisance case o heasink T.. n µs K/W K/W Brake Diode M max. repeiive reverse volage forward curren 8 T = 8 forward volage I = I reverse curren = M Q I rr M rr reverse recovery charge max. reverse recovery curren reverse recovery ime = -di /d = I = /µs T T T 3.97.3. m. m. µ 8 3 ns hj hermal resisance juncion o case. K/W hh hermal resisance case o heasink. K/W IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d
UB7-NOXT Package aings Symbol Definiion ondiions min. yp. max. Uni I MS MS curren per erminal T virual juncion emperaure - T op operaion emperaure - Weigh M D dspp/pp dspb/pb --Pack T sg sorage emperaure - ISOL mouning orque creepage disance on surface sriking disance hrough air isolaion volage = second = minue erminal o erminal erminal o backside / Hz, MS; I ISOL m.. 3 3 37. g Nm mm mm Dae ode Prod. Index Par Number (Typ) Lo No.: yyww Daa Marix: Typ (-9), D+Prod.Index (-), KT# (-3) leer (33), lfd.# (33-3) Ordering Sandard Ordering Number Marking on Produc Delivery Mode Quaniy ode No. UB7-NOXT UB7-NOXT Bliser 73 Similar Par Package olage class UB7-NOXT --Pack Temperaure Sensor NT Symbol Definiion ondiions min. yp. max. resisance T =.3. B / emperaure coefficien 3 Equivalen ircuis for Simulaion * on die level T = I ecifier Brake IGBT max hreshold volage.79 max slope resisance *.. Brake Diode. 3.7 Uni kω K mω 7 3 [ ] T [ ] Typ. NT resisance vs. emperaure IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d
UB7-NOXT Oulines --Pack, ±,8 ±, +, ± Ø, 3, ±, 3, max., (see ) x * = = * *7 * *7 *, 3 3 7 ±, 8,3 ±, 3 3,,7 ±,3,7 ±,3 Ø, Ø,, *, * 7 8 9 Ø,, * *7 * *7 *,7 ±,3,7 ±,3 Marking on produc ufdruck der Typenbezeichnung * Ø,8 ±, emarks / Bemerkungen:. Nominal disance mouning screws on hea sink: mm / Nennabsand Befesigungsschrauben auf Kühlkörper: mm. General olerance / llgemeinoleranz : DIN ISO 78 -T-c 3. Surface reamen of pins: in plaed (Sn) in ho dip / Oberflächenbehandlung der Pins: verzinn (Sn) im Tauchbad. Deail X: EJOT PT self-apping screws (dimension K) o be recommended for mouning on PB selbsschneidende Schraube (Größe K) empfohlen für die PB-Monage Take care on he maximum screw lengh according o board hickness and he maximum hole deph of mm Bei der Wahl der Schraubenlänge die PB-Dicke und die maximale Lochiefe von mm beachen ecommended mouning orque:. Nm / Empfohlenes Drehmomen:. Nm +, NT ~ 7~ 9~ IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d
UB7-NOXT ecifier Hz.8 x M = 8 [] SM [] 3 T = I [ s] T = T = T = 8 T = T =...8.... [] -3 - - [s] [ms] ig. orward curren vs. volage drop per diode ig. Surge overload curren vs. ime per diode ig. 3 I vs. ime per diode P o [W] 3 D =...33.7.8 hj :. KW.8 KW KW KW KW 8 KW 8 I ()M [] D =...33.7.8 8 8 8 3 I dm [] 7 7 T [ ] 7 T [ ] ig. Power dissipaion vs. forward curren and ambien emperaure per diode ig. Max. forward curren vs. case emperaure per diode.. Z hj.8. [K/W]... [ms] ig. Transien hermal impedance juncion o case vs. ime per diode onsans for Z hj calculaion: i h (K/W) i (s).7..3. 3.3..3..8.8 IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d
UB7-NOXT Brake IGBT 7 GE = 7 GE = 7 9 3 7 T = [] 3 T [] 3 9 [] 3 T T T = 3 E [] ig. Typ. oupu characerisics 3 E [] ig. Typ. oupu characerisics 7 8 9 3 GE [] ig. 3 Typ. ranfer characerisics GE [] = 3 E = 8 E [mj] G = 7 E = GE = ± T E on E off E [mj] = 3 E = GE = ± T E on E off 8 Q G [n] ig. Typ. urn-on gae charge 8 [] ig. Typ. swiching energy versus collecor curren 3 8 G [ ] ig. Typ. swiching energy versus gae resisance. Z hj [K/W]...... [s] ig. 7 Typ. ransien hermal impedance IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d
UB7-NOXT Brake Diode 3 3 [] T = Q rr 3.... [μ].. T = 8 = 3 = = 7. I M [] 3 T = 8 = 3 = = 7.. 3 8 [] di /d [/μs] di /d [/μs] ig. orward curren versus ig. Typ. reverse recov. charge Q r versus di /d ig. 3 Typ. peak reverse curren I M versus di /d.. 8 T = 8 T = = 8. 8.8 K f.. I M rr [ns] = 3 = = 7. [] fr [µs]. Q r. 8 T [ ] ig. Dynamic parameers Q r, I M versus T 8 di /d [/μs] ig. Typ. recovery ime rr versus di /d. 8 -di /d [/μs] ig. Typ. peak forward volage and fr versus di /d fr Z hj. [K/W]....... [s] ig. 7 Transien hermal impedance juncion o case IXYS all righs reserved Daa according o IE 77and per semiconducor unless oherwise specified d