V = IR or R = V I. R = ρ l A

Similar documents
Introduction to Engineering Materials ENGR2000. Dr.Coates

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors:

Lecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1

Diamond. Covalent Insulators and Semiconductors. Silicon, Germanium, Gray Tin. Chem 462 September 24, 2004

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

Semiconductors. Semiconductors also can collect and generate photons, so they are important in optoelectronic or photonic applications.

Review of Semiconductor Fundamentals

Electrical Properties

ELECTRONIC I Lecture 1 Introduction to semiconductor. By Asst. Prof Dr. Jassim K. Hmood

ECE 250 Electronic Devices 1. Electronic Device Modeling

SEMICONDUCTORS. Conductivity lies between conductors and insulators. The flow of charge in a metal results from the

EE301 Electronics I , Fall

Lecture 7: Extrinsic semiconductors - Fermi level

DO PHYSICS ONLINE ELECTRIC CURRENT FROM IDEAS TO IMPLEMENTATION ATOMS TO TRANSISTORS ELECTRICAL PROPERTIES OF SOLIDS

Charge Carriers in Semiconductor

ISSUES TO ADDRESS...

Atoms? All matters on earth made of atoms (made up of elements or combination of elements).

Hall effect in germanium

12/10/09. Chapter 18: Electrical Properties. View of an Integrated Circuit. Electrical Conduction ISSUES TO ADDRESS...

So why is sodium a metal? Tungsten Half-filled 5d band & half-filled 6s band. Insulators. Interaction of metals with light?

First-Hand Investigation: Modeling of Semiconductors

Electrical Resistance

Mat E 272 Lecture 25: Electrical properties of materials

Crystal Properties. MS415 Lec. 2. High performance, high current. ZnO. GaN

CLASS 12th. Semiconductors

Chapter 4: Bonding in Solids and Electronic Properties. Free electron theory

n i exp E g 2kT lnn i E g 2kT

EECS143 Microfabrication Technology

Ch. 2: Energy Bands And Charge Carriers In Semiconductors

Lecture 3b. Bonding Model and Dopants. Reading: (Cont d) Notes and Anderson 2 sections

The Periodic Table III IV V

Electronics The basics of semiconductor physics

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV

Chemistry Instrumental Analysis Lecture 8. Chem 4631

Chap. 1 (Introduction), Chap. 2 (Components and Circuits)

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices

EXTRINSIC SEMICONDUCTOR

EECS130 Integrated Circuit Devices

Semiconductor Device Physics

ELEMENTARY BAND THEORY

Chapter 1 Overview of Semiconductor Materials and Physics

Semiconductor Physics

Carriers Concentration, Current & Hall Effect in Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Electronic Devices & Circuits

Lecture 17: Semiconductors - continued (Kittel Ch. 8)

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Microscopic Ohm s Law

Introduction to Semiconductor Devices

per unit cell Motif: Re at (0, 0, 0); 3O at ( 1 / 2, 0), (0, 0, 1 / 2 ) Re: 6 (octahedral coordination) O: 2 (linear coordination) ReO 6

LN 3 IDLE MIND SOLUTIONS

Introduction to Semiconductor Devices

Electrons in materials. (where are they, what is their energy)

EE495/695 Introduction to Semiconductors I. Y. Baghzouz ECE Department UNLV

EE 346: Semiconductor Devices. 02/08/2017 Tewodros A. Zewde 1

ADVANCED UNDERGRADUATE LABORATORY EXPERIMENT 20. Semiconductor Resistance, Band Gap, and Hall Effect

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Lecture 2 Electrons and Holes in Semiconductors

Basic Semiconductor Physics

Minimal Update of Solid State Physics

R measurements (resistivity, magnetoresistance, Hall). Makariy A. Tanatar

Ga and P Atoms to Covalent Solid GaP

ECE 142: Electronic Circuits Lecture 3: Semiconductors

Electronic PRINCIPLES

Resistance Learning Outcomes

Electro - Principles I

EE 446/646 Photovoltaic Devices I. Y. Baghzouz

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:

ELECTRONIC DEVICES AND CIRCUITS SUMMARY

CLASS 1 & 2 REVISION ON SEMICONDUCTOR PHYSICS. Reference: Electronic Devices by Floyd

Resistance Learning Outcomes. Resistance Learning Outcomes. Resistance

Chapter 2. Electronics I - Semiconductors

Electrical material properties

HALL. Semiconductor Resistance, Band Gap, and Hall Effect

Chem 241. Lecture 23. UMass Amherst Biochemistry... Teaching Initiative

Semiconductor physics I. The Crystal Structure of Solids

Electrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000

Chem 241. Lecture 24. UMass Amherst Biochemistry... Teaching Initiative

Chem 241. Lecture 21. UMass Amherst Biochemistry... Teaching Initiative

Chapter 1 Semiconductor basics

KATIHAL FİZİĞİ MNT-510

Lecture 2. Unit Cells and Miller Indexes. Reading: (Cont d) Anderson 2 1.8,

ENERGY BANDS AND GAPS IN SEMICONDUCTOR. Muhammad Hafeez Javed

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation

V, I, R measurements: how to generate and measure quantities and then how to get data (resistivity, magnetoresistance, Hall). Makariy A.

CH676 Physical Chemistry: Principles and Applications. CH676 Physical Chemistry: Principles and Applications

The electronic structure of solids. Charge transport in solids

CHAPTER 2: ENERGY BANDS & CARRIER CONCENTRATION IN THERMAL EQUILIBRIUM. M.N.A. Halif & S.N. Sabki

Basic cell design. Si cell

Lecture Number - 01 Metals, Semiconductors and Insulators

MTLE-6120: Advanced Electronic Properties of Materials. Intrinsic and extrinsic semiconductors. Reading: Kasap:

Micron School of Materials Science and Engineering. Problem Set 9 Solutions

Solid State Device Fundamentals

Electrons, Holes, and Defect ionization

FREQUENTLY ASKED QUESTIONS February 21, 2017

Chapter 12: Electrical Properties. RA l

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)

Due to the quantum nature of electrons, one energy state can be occupied only by one electron.

Physical Structure of Matter. Hall effect in p-germanium Solid-state Physics, Plasma Physics. What you need:

Transcription:

Metals and Semiconductors Ram Seshadri MRL 2031, x6129, seshadri@mrl.ucsb.edu Electrical resistance and Ohm s Law: If an electric current I (units of A, Ampère) flows through a conductor with resistance R, then the potential difference across the ends of the conductor V (unit V, Volts) is given by Ohm s law: V = IR or R = V I and the units of resistance are Ω, Ohms. The resistance of a material is directly proportional to its length l and inversely proportional to the cross-sectional area A. The proportionality constant is called the resistivity or the specific resistance ρ, and R = ρ l A The unit of ρ are Ωm though Ωcm is also commonly used. ρ is an important material-dependent property that is usually a function of temperature. The value of ρ at room temperature is indicative of whether something is a metal (ρ is of the order of 10 6 Ω-m or less) an insulator (ρ is of the order of 10 6 Ω-m or more). Materials that are somewhere in-between are called semiconductors. The electrical conductivity σ is the inverse of the electrical resistivity ρ. σ = 1 ρ The unit Ω 1 has a name. It is called S, emen. Measuring the resistance: Usually, the four-probe technique is employed as depicted below. V A l A The resistance is measured using R = V/I and the resistivity is then obtained from a knowledge of A and l. Energy bands: We have already introduced the 2 molecule and the notion that electrons are shared between atoms. These electrons form bonding and antibonding energy levels. In a crystal, with typically Avogadro number of atoms, the energy levels are smeared out into what are known as bands. In the simplest picture, in a covalent solid such as (diamond) or, Avogadro number of bonding levels form the valence band, which is filled with electrons, and Avogadro number of antibonding levels form the conduction band which is empty. 1

solid 2 molecule σ 1s σ1s conduction band gap valence Energy When, in a materials such as (diamond) or, an electric field is applied, if an electron goes from the left to the right in the material, this is compensated by an electron that goes from the right to the left. There is therefore almost no electrical conduction, and the electrical resistance is very high. This is a characteristic of a materials where the valence band is completely filled. The only current that is carried in the material is by electrons that are energetically promoted from the valence band to the empty conduction band. Such promotion is called thermal activation and this (in insulators) decreases the resistivity. In insulators and semiconductors, the resistivity often varies with temperature in the following manner: ρ(t ) = ρ 0 exp( E g 2k B T ) where ρ 0 is a constant pre-factor, and E g is the electronic band gap the energy separation between the top of the valence band and the bottom of the conduction band as probed by electrical transport studies. 1 A plot of log ρ vs. 1/T gives a slope which is equal to E g /(2k B ). E g for semiconductors is = 1.11 ev, Ge = 0.67 ev, GaAs = 1.42 ev and ds = 2.40 ev. Insulators, semiconductors and metals The schematic band structures of these is shown the next figure. Metals have free electrons. This means that instead of having all bonding states filled and all antibonding states empty, they can have partially filled valence or conduction bands. insulator semiconductor metal metal Energy Metals are formed when there is not a simple integral relation between the number of bonds and the number of valence electrons. For example, Al has 3 valence electrons, shared, in its fcc structure, with twelve neighbors. It is difficult to make a clear separation between bonding and antibonding levels. on the other hand, has four valence electrons and four near-neighbors (in the diamond structure). Each has a bond with its neighbor with 2 electrons, and an antibond which is correspondingly empty. So Al is a very good metal and is a very good semiconductor. arbon (diamond) is similar to in its bonding and is one of the best insulators. In 1 Other techniques, such as spectroscopy often yield different values, so it is best to specify how the band gap is measured. 2

general, compounds formed from atoms with half-filled or fully filled levels will be insulating or semiconducting, whereas compounds formed from atoms that have some free electrons will be metallic. Anything with a stable electronic configuration (noble gas, d 0, d 10, etc.) usually forms an insulator. Bonding and Energy Levels in Molecules: onsider : 2 2 antibonding bonding 4 : antibonding 4 bonding Bonds in molecules to bands in solids: onsider ethene (ethylene) 2 4 : onsider only π bonding and antibonding levels 3

energy n licon: 4 sp 3 bonds: Bands and band gaps: conduction band energy band gap valence band Electron mobility Metals have free electrons and these are usually knocking around in in a random fashion, much like atoms in a gas. When an electric field is applied, however, the electrons start transporting a current. In other words, there is a net flow of electrons, depending on the direction of the electric field. The drift velocity v d describes the average velocity of the electrons in the direction of the electric field E. The mobility µ e of the electron is then obtained from The conductivity σ can then be expressed v d = µ e E σ = n e µ e where n is the number of electrons participating in the electrical transport process, and e is the magnitude of the electronic charge. 4

Examples of metals: A number of elements in the periodic table are referred to as metals. owever, when discussing properties, materials with free electrons that are good conductors of electricity are also referred to as metals. Examples of metals that are also compounds are: TiO, ReO 3, BaMoO 3, TiS 2, PbO 2 etc. Electrical resistivity of metals: Different processes in a metal can scatter electrons as they travel, increasing the electrical resistivity. The resistivity can be written as sum corresponding to the different processes: ρ total = ρ t + ρ i + ρ d where the subscripts on the RS correspond to temperature, impurities, and deformations respectively. This is called Matthiessen s rule. Electrons and holes, and the all effect Depending on whether the conduction arises from a few electrons in the conduction band or some electrons having been removed at the top of the valence band, the nature of charge carriers varies. In the former case, the carriers are negatively charged. In the latter case, the carriers effectively have positive charge it is useful to the think of the the few electrons removed from the top of the valence band as having left behind positively charged holes. Electrons are indicated with n and holes with p. ole vs. electron conduction can be distinguished by the all experiment where the resistance of a conductor is measured in the presence and absence of a magnetic field. + + + + + + + + + + E y - - - - - - - - - - - - - E x, j x Doping of semiconductors and intrinsic and extrinsic behavior: Intrinsic semiconduction is when the electrical properties are dictated by the pure material. Extrinsic semiconduction is when small amounts of impurities or dopants (usually deliberately introduced) completely dominate the electrical transport properties. The conductivity of an intrinsic semiconductor can be expressed In an intrinsic semiconductor, p = n and σ = n e µ e + p e µ h σ = n e (µ e + µ h ) = p e (µ e + µ h ) 5