Quad SPST CMOS Analog Switches

Similar documents
Quad SPST CMOS Analog Switches

DG417/418/419. Precision CMOS Analog Switches. Features Benefits Applications. Description. Functional Block Diagram and Pin Configuration

Quad SPST CMOS Analog Switches

Quad SPST CMOS Analog Switches

Precision CMOS Analog Switches

Low-Power, High-Speed CMOS Analog Switches

Low-Power, High-Speed CMOS Analog Switches

Quad SPST CMOS Analog Switches

Low-Voltage Single SPDT Analog Switch

Improved, Dual, High-Speed Analog Switches

FEATURES APPLICATIONS

DG411CY. Pin Configurations/Functional Diagrams/Truth Tables IN2 DG412 IN3 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT

N-Channel 80-V (D-S) MOSFET

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

Low-Voltage Single SPDT Analog Switch

P-Channel 60-V (D-S) MOSFET

IN1 IN2 DG412 GND IN3 IN4 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Precision Monolithic Low-Voltage CMOS Analog Switches

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Monolithic N-Channel JFET Dual

DG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS

Monolithic N-Channel JFET Dual

Improved Quad CMOS Analog Switches

Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers

Matched N-Channel JFET Pairs

3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers

Precision, Quad, SPDT, CMOS Analog Switch

PART TOP VIEW. Maxim Integrated Products 1

P-Channel 30-V (D-S) MOSFET

N-Channel 20-V (D-S) Fast Switching MOSFET

P-Channel 30-V (D-S) MOSFET

Precision, Quad, SPST Analog Switches

16, Low Parasitic Capacitance and Leakage, +12 V / +5 V / +3 V / ± 5 V Quad SPST Switches

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET

1 pc Charge Injection, 100 pa Leakage, CMOS 5 V/+5 V/+3 V Quad SPST Switches ADG611/ADG612/ADG613

N-Channel 30 V (D-S) MOSFET

PS391/PS392/PS393. Precision, Quad, SPST, Analog Switches. Description

N-Channel 60 V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

FEATURES BENEFITS APPLICATIONS

P-Channel 150-V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET

P-Channel 2.5 V (G-S) MOSFET

N-Channel 30-V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

N-Channel 250 V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET

Monolithic N-Channel JFET Dual

Battery Disconnect Switch

Low Capacitance, Low Charge Injection, ±15 V/+12 V icmos Quad SPST Switches ADG1212-EP

N-Channel 30-V (D-S) MOSFET

ON OFF PART. Pin Configurations/Functional Diagrams/Truth Tables 5 V+ LOGIC

P-Channel 20 V (D-S) MOSFET

Complementary MOSFET Half-Bridge (N- and P-Channel)

P-Channel 30-V (D-S) MOSFET

High-Voltage Schottky Rectifier

Current Sensing MOSFET, N-Channel 30-V (D-S)

N-Channel 8 V (D-S) MOSFET

N-Channel and P-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET

TEMD5020. Silicon PIN Photodiode. Vishay Semiconductors

N-Channel 100 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET

Precision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers

P-Channel 30-V (D-S) MOSFET

Improved, SPST/SPDT Analog Switches

Matched N-Channel JFET Pairs

Monolithic N-Channel JFET Dual

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

P-Channel 30-V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

Precision, Quad, SPST Analog Switches

N-Channel 20-, 30-, 40-V (D-S) MOSFETs

N-Channel 30-V (D-S) MOSFET

DG3157. High-Speed, Low R ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) DESCRIPTION FEATURES

N-Channel 30 V (D-S) MOSFET

8-Channel, Dual 4-Channel, Triple 2-Channel Multiplexers

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409

Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A

N-Channel 150 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

Transcription:

Quad PT MO Analog witches Low On-Resistance: Low Leakage: 8 pa Low Power onsumption:.2 mw Fast witching Action t ON : 1 ns Low harge Injection Q: 1 p G21A/G22 Upgrades TTL/MO-ompatible Logic ingle upply apability Less ignal Errors and istortion Reduced Power upply Requirements Faster Throughput Improved Reliability Reduced Pedestal Errors implifies Retrofit imple Interfacing Audio witching Battery Powered ystems ata Acquisition Hi-Rel ystems ample-and-hold ircuits ommunication ystems Automatic Test Equipment Medical Instruments The G441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally closed function. The G442 has a normally open function. ombining low on-resistance (, typ.) with high speed (t ON 1 ns, typ.), the G441/442 are ideally suited for upgrading G21A/22 sockets. harge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high voltage ratings and superior switching performance, the G441/442 are built on s high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. Key 1 1 N 2 2 3 2 1 2 19 1 1 16 2 1 4 18 2 1 2 1 2 1 3 14 2 N GN 6 7 L G441 Top View 17 16 1 N N 4 ual-in-line and OI 13 G441 GN 12 N Top View 4 8 9 1 11 12 13 14 3 4 6 11 3 4 4 N 3 3 4 7 1 3 4 8 9 3 Logic G441 G442 1 ON ON Logic.8 V Logic 1 2.4 V ocument Number: 73-2147 Rev. H, 11-Mar-2 1

Temp Range Package Part Number 4 to 8 to 12 16-Pin Plastic IP 16-Pin Narrow OI 16-Pin erip L-2 G441J G442J G441Y G442Y G441AK G441AK/883 962-92411MEA G442AK G442AK/883 962-92412MEA 962-92411M2A 962-92412M2A to..................................................... 44 V GN to................................................... 2 V igital Inputs a V, V.......................... () 2 V to () +2 V or 3 ma, whichever occurs first ontinuous urrent (Any Terminal)............................ 3 ma urrent, or (Pulsed 1 ms, 1% duty cycle).................. 1 ma torage Temperature (AK uffix).................. 6 to 1 (J, Y uffix).............. 6 to 12 Power issipation (Package)b 16-Pin Plastic IP c......................................... 4 mw 16-Pin erip d............................................ 9 mw 16-Pin Narrow Body OI d.................................. 9 mw L-2 d................................................. 12 mw Notes: a. ignals on X, X, or X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to P Board. c. erate 6 mw/ above 7 d. erate 12 mw/ above 2 V Reg X Level hift/ rive GN FIGURE 1. 2 ocument Number: 73-2147 Rev. H, 11-Mar-2

Test onditions Unless Otherwise pecified A uffix to 12 uffix 4 to 8 Parameter ymbol = 1 V, = 1 V, V = 2.4 V,.8 V f Temp b Typ c Min d Max d Min d Max d Unit Analog witch Analog ignal Range e V ANALOG 1 1 1 1 V rain-ource On-Resistance r (on) I = 1 ma, V = 8. V = 13. V, = 13. V On-Resistance Match Between hannels e r = 1 ma, V = 1 V (on) = 1 V, = 1 I V 8 1 4 8 1 4 witch Off Leakage urrent I (off) I (off) = 16., = 16. V V = 1. V, V = 1. V.1. 2.1. 2. 2. 2.... na hannel On Leakage urrent I (on) = 16. V, = 16. V V = V = 1. V.8. 4. 4. 1. 1 igital ontrol Input urrent V Low I IL V under test =.8 V, All Other = 2.4 V.1 Input urrent V High I IH V under test = 2.4 V, All Other =.8 V.1 na ynamic haracteristics Turn-On Time t ON 1 2 2 R G441 L = 1 k, L = 3 pf 9 12 12 ns V Turn-Off Time t = 1 V, ee Figure 2 G442 11 21 21 harge Injection e Off Isolation e rosstalke (hannel-to-hannel) Q OIRR X TALK L = 1 nf, V = V V gen = V, R gen = 6 R L =, L = pf f = 1 MHz 1 1 p ource Off apacitance e (off) 4 rain Off apacitance e (off) f = 1 MHz 4 pf hannel On apacitance e (on) V ANALOG = V 16 Power upplies Positive upply urrent I+ 1 1 1 db Negative upply urrent I = 16. V, = 16. V V = or V. 1 1 1 A Ground urrent I GN 1 1 1 ocument Number: 73-2147 Rev. H, 11-Mar-2 3

Test onditions Otherwise Unless pecified A uffix to 12 uffix 4 to 8 Parameter Analog witch ymbol = 12 V, = V, V = 2.4 V,.8 V f Temp b Typ c Min d Max d Min d Max d Unit Analog ignal Range e V ANALOG 12 12 V rain-ource On-Resistance r (on) I = 1 ma, V = 3 V, 8 V = 1.8 V 1 16 2 16 2 ynamic haracteristics Turn-On Time t ON RL R L = 1 k, L = 3 pf 3 4 4 Turn-Off Time t V = 8 V, ee Figure 2 6 2 2 harge Injection Q L = 1 nf V gen = 6 V, R gen = 2 p Power upplies Positive upply urrent I+ 1 1 1 ns Negative upply urrent I = 13.2 V, = V V = or V Ground urrent I GN.1 1 1 1 1 1 1 1 A Notes: a. Refer to PROE OPTION FLOWHART. b. = 2, = as determined by the operating temperature suffix. c. Typical values are for EIGN AI ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V = input voltage to perform proper function. 4 ocument Number: 73-2147 Rev. H, 11-Mar-2

r (on) vs. V and Power upply Voltage r (on) vs. V and Temperature 1 8 ) r(on) rain-ource On-Resistance ( 8 6 4 2 V 8 V 1 V 12 V 1 V 2 V ) r(on) rain-ource On-Resistance ( 7 6 4 3 2 1 4 = 1 V = 1 V 12 8 2 2 1 1 1 1 2 1 1 1 1 V rain Voltage (V) V rain Voltage (V) r (on) vs. V and Unipolar Power upply Voltage r (on) vs. V and Temperature (ingle 12-V upply) 3 14 = V ) r(on) rain-ource On-Resistance ( 2 2 1 1 = V 8 V 1 V 12 V 1 V 2 V ) r(on) rain-ource On-Resistance ( 12 1 8 6 4 2 4 12 8 2 = 12 V = V 4 8 12 16 2 2 4 6 8 1 12 V rain Voltage (V) V rain Voltage (V) 14 rosstalk and Off Isolation vs. Frequency harge Injection vs. ource Voltage 12 rosstalk 4 L = 1 nf 1 3 ( db) 8 6 Q (p) 2 1 = 1 V = 1 V Off Isolation 4 2 = 1 V = 1 V Ref. 1 dbm 1 2 = 12 V = V 3 1 1 k 1 k 1 k 1 M 1 M 1 1 f Frequency (Hz) V ource Voltage (V) ocument Number: 73-2147 Rev. H, 11-Mar-2

2.4 witching Threshold vs. upply Voltage 2 ource/rain Leakage urrents I (off), I (off) 1.6 2 (V) V.8 (pa) I, I 4 6 I (on) 8 = 1 V = 1 V For I (off), V = V 1 1 2 1 1 1 1 1, Positive and Negative upplies (V) V or V rain or ource Voltage (V) 1 ource/rain Leakage urrents (ingle 12-V upply) Operating Voltage I (off), I (off) 44 4 V MO ompatible (pa) I, I 1 2 3 4 I (on) + I (on) = 12 V = V For I, V = For I, V = 2 4 6 8 1 12 (V) 3 2 1 3 ÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ TTL ompatible V ÇÇÇÇÇÇ =.8 V, 2.4 V ÇÇÇÇÇÇ 1 2 3 MO ompatible 4 V or V rain or ource Voltage (V) Negative upply (V) 16 witching Time vs. Power upply Voltage witching Time vs. Power upply Voltage 14 t ON 4 = V 12 t ON t (ns) 1 8 6 t t (ns) 3 2 4 1 t 2 1 12 14 16 18 2 22 upply Voltage (V) 8 1 12 14 16 18 2 22 V ource Voltage (V) 6 ocument Number: 73-2147 Rev. H, 11-Mar-2

1 V 3 V GN R L1 k L 3 pf Logic Input witch Input 3 V V V % % t t r <2 ns t f <2 ns 8% 8% 1 V witch Output V t ON L (includes fixture and stray capacitance) Note: Logic input waveform is inverted for G442. FIGURE 2. witching Time V O R g 3 V GN 1 V L 1 nf FIGURE 3. harge Injection X (G441) X (G442) ON ON Q = x L V R g = V, 2.4 V N 1 1 2 1 2 = 1 mf tantalum in parallel with.1 mf ceramic V R g = V, 2.4 V R L V, 2.4 V 2 R L GN GN 1 V 1 V X TALK Isolation = 2 log = RF bypass FIGURE 4. rosstalk V V Off Isolation = 2 log FIGURE. Off Isolation V, 2.4 V Meter HP4192A Impedance Analyzer or Equivalent GN 1 V FIGURE 6. ource/rain apacitances ocument Number: 73-2147 Rev. H, 11-Mar-2 7

+24 V R L G442 I = 3A 1 VN3L, M GN 1 k V + 1/4 G442 H + UT = Load Off 1 = Load On 1 V H = ample L = Hold FIGURE 7. Power MOFET river FIGURE 8. Open Loop ample-and-hold V + UT Gain error is determined only by the resistor tolerance. Op amp offset and MRR will limit accuracy of circuit. GA 1 A V = 1 R 1 9 k GA 2 A V = 1 GA 3 A V = 2 R 2 k R 3 4 k With W 4 losed UT V = R 1 + R 2 + R 3 + R 4 R 4 = 1 GA 4 A V = 1 G441 or G442 GN R 4 1 k 1 V FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier 8 ocument Number: 73-2147 Rev. H, 11-Mar-2

Notice Legal isclaimer Notice Vishay pecifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. ocument Number: 91 Revision: 8-Apr- 1