pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized valanche Voltage and Current l 20V V GS Max. Gate Rating l 0% tested for Rg l Lead-Free 8 S S S G 2 3 4 7 6 5 HEXFET Power MOSFET V SS R S(on) max Qg 30V.9m:@V GS = V 6.2nC Top View SO-8 P - 968 escription The incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency C-C converters that power the latest generation of processors for notebook and Netcom applications. bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 30 V V GS Gate-to-Source Voltage ± 20 I @ T = 25 C Continuous rain Current, V GS @ V I @ T = 70 C Continuous rain Current, V GS @ V 9. I M Pulsed rain Current c 88 P @T = 25 C Power issipation 2.5 W P @T = 70 C Power issipation.6 Linear erating Factor 0.02 W/ C T J Operating Junction and -55 to 50 C Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead g 20 R θj Junction-to-mbient fg C/W 50 Notes through are on page 9 www.irf.com /24/07
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 30 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 0.022 V/ C gfs Forward Transconductance 25 S V S = 5V, I = 8.8 Q g Total Gate Charge 6.2 9.3 Q gs Pre-Vth Gate-to-Source Charge.4 V S = 5V Q gs2 Post-Vth Gate-to-Source Charge 0.7 V GS = 4.5V nc Q gd Gate-to-rain Charge 2.2 I = 8.8 Q godr Gate Charge Overdrive.9 See Figs. 5 & 6 Q sw Switch Charge (Q gs2 Q gd ) 2.9 Q oss Output Charge 3.7 nc V S = 6V, V GS = 0V R g Gate Resistance 2.2 3.7 Ω t d(on) Turn-On elay Time 6.7 V = 5V, V GS = 4.5V t r Rise Time 7.9 I = 8.8 ns t d(off) Turn-Off elay Time 7.3 R G =.8Ω t f Fall Time 4.4 See Fig. 8 C iss Input Capacitance 760 V GS = 0V C oss Output Capacitance 70 pf V S = 5V C rss Reverse Transfer Capacitance 82 =.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 53 mj I R valanche Current c 8.8 iode Characteristics Parameter Min. Typ. Max. Units Conditions V GS = 0V, I = 250µ Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 9.3.9 V GS = V, I = e mω 4.2 7.5 V GS = 4.5V, I = 8.8 e V GS(th) Gate Threshold Voltage.35.80 2.35 V V S = V GS, I = 25µ V GS(th) Gate Threshold Voltage Coefficient -5.8 mv/ C V S = V GS, I = 25µ I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µ 50 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V n Gate-to-Source Reverse Leakage -0 V GS = -20V Conditions I S Continuous Source Current MOSFET symbol 3. (Body iode) showing the G I SM Pulsed Source Current integral reverse 88 S (Body iode)c p-n junction diode. V S iode Forward Voltage.0 V T J = 25 C, I S = 8.8, V GS = 0V e t rr Reverse Recovery Time 2 8 ns T J = 25 C, I F = 8.8, V = 5V Q rr Reverse Recovery Charge 3 20 nc di/dt = 300/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSL) 2 www.irf.com
I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () 0 VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 0 VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 0. 2.3V 60µs PULSE WITH Tj = 25 C 0.0 0. 0 V S, rain-to-source Voltage (V) 2.3V 60µs PULSE WITH Tj = 50 C 0. 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 2.0 I = V GS = V T J = 50 C.5 T J = 25 C.0 0. V S = 5V 60µs PULSE WITH 2 3 4 5 6 V GS, Gate-to-Source Voltage (V) 0.5-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
I S, Reverse rain Current () I, rain-to-source Current () C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE 5.0 I = 8.8 C rss = C gd C oss = C ds C gd 4.0 V S = 24V V S = 5V 00 C iss 3.0 0 C oss C rss 2.0.0 0 V S, rain-to-source Voltage (V) 0.0 0 2 3 4 5 6 7 8 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 00 00 OPERTION IN THIS RE LIMITE BY R S (on) 0 0 T J = 50 C msec 0µsec msec T J = 25 C V GS = 0V 0. 0.4 0.6 0.8.0.2.4 V S, Source-to-rain Voltage (V) 0. T = 25 C Tj = 50 C Single Pulse 0 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
I, rain Current () V GS(th), Gate Threshold Voltage (V) 2 2.5 2.2 8 6.9 I = 250µ 4.6 I = 25µ 2.3 0 25 50 75 0 25 50 T, mbient Temperature ( C).0-75 -50-25 0 25 50 75 0 25 50 T J, Temperature ( C ) Fig 9. Maximum rain Current vs. mbient Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thj ) C/W 0 = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE ( THERML RESPONSE ) 0. R R 2 R 3 R 4 R R 2 R 3 R 4 Ri ( C/W) τi (sec) t τ J τ τ 2.2284 0.00069 J τ 0.0 t2 τ τ τ 2 τ 3 τ 7.0956 0.03738 τ 4 2 τ 3 τ 4 Notes: 25.4895 0.68725 Ci= τi/ri. uty factor = t / t 2 Ci= τi/ri 5.98 25.8 2. Peak T J = P M x Z thj T 0.00 E-006 E-005 0.000 0.00 0.0 0. 0 t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient www.irf.com 5
R S(on), rain-to -Source On Resistance (m Ω) E S, Single Pulse valanche Energy (mj) 35 30 25 I = 250 200 50 I TOP 0.67 0.82 BOTTOM 8.80 20 5 T J = 25 C 0 T J = 25 C 50 5 2 4 6 8 2 4 6 8 20 V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage 0 25 50 75 0 25 50 Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy vs. rain Current V (BR)SS V S R G 20V tp L.U.T IS 0.0Ω 5V RIVER - V I S tp 0 20K K UT L VCC Fig 4. Unclamped Inductive Test Circuit and Waveform Id Fig 5. Gate Charge Test Circuit Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 6. Gate Charge Waveform 6 www.irf.com
-.U.T - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 7. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V GS V S R.U.T. V S 90% R G - V V GS Pulse Width µs uty Factor 0. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms www.irf.com 7
SO-8 Package Outline imensions are shown in milimeters (inches) ' % ',0,&(6 0, 0; 0,//,0(7(56 0, 0; ( >@ E F ' ( H %6,& %6,& H %6,& %6,& ; H. / \ H & \.[ ;E >@ ;/ ;F >@ & % )22735,7 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,2,//,0(7(5 ',0(6,265(62:,,//,0(7(56>,&(6@ 287/,(&2)250672-('(&287/,(06 ',0(6,2'2(627,&/8'(02/'3527586,26 02/'3527586,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/'3527586,26 02/'3527586,262772(;&(('>@ ',0(6,2,67(/(*72)/(')2562/'(5,*72 68%6757( >@ ;>@ SO-8 Part Marking Information (;03/(7,6,6,5)026)(7,7(57,2/ 5(&7,),(5 /2*2 ;>@ ) ;;;; '7(&2'(<:: 3 ',6*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 ;>@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com
SO-8 Tape and Reel imensions are shown in milimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.38mH, R G = 25Ω, I S = 8.8. Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 90 C. Note: For the most current drawing please refer to IR website at http://www.irf.com/package ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information./2007 www.irf.com 9