P - 956B RF9952 Generation Technoogy Utra Low On-Resistance ua N and P Channe MOSFET Surface Mount ery Low Gate Charge and Switching Losses Fuy vaanche Rated S G S2 G2 N-CHNNEL MOSFET 8 2 3 4 7 6 5 2 2 P-CHNNEL MOSFET Top iew HEXFET Power MOSFET N-Ch P-Ch SS 3-3 R S(on).Ω.25Ω escription Fifth Generation HEXFETs from nternationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. Recommended upgrade: RF739 or RF739 Lower profie/smaer equivaent: RF759 SO-8 Symbo Maximum Units N-Channe P-Channe rain-source otage S 3 Gate-Source otage GS ± 2 T = 25 C 3.5-2.3 Continuous rain Current T = 7 C 2.8 -.8 Pused rain Current M 6 - Continuous Source Current (iode Conduction) S.7 -.3 Maximum Power issipation T = 25 C 2. P T = 7 C.3 W Singe Puse vaanche Energy E S 44 57 mj vaanche Current R 2. -.3 Repetitive vaanche Energy E R.25 mj Peak iode Recovery dv/dt dv/dt 5. -5. / ns Junction and Storage Temperature Range T J, T STG -55 to + 5 C Therma Resistance Ratings Parameter Symbo Limit Units Maximum Junction-to-mbient R θj 62.5 C/W 6/2/5
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions N-Ch 3 GS =, = 25µ (BR)SS rain-to-source Breakdown otage P-Ch -3 GS =, = -25µ N-Ch.5 Reference to 25 C, = m (BR)SS / T J Breakdown otage Temp. Coefficient / C P-Ch.5 Reference to 25 C, = -m R S(ON) Static rain-to-source On-Resistance.8. GS =, = 2.2 N-Ch.2.5 GS = 4.5, =. Ω.65.25 GS = -, = -. P-Ch.29.4 GS = -4.5, = -.5 N-Ch. S = GS, = 25µ GS(th) Gate Threshod otage P-Ch -. S = GS, = -25µ g N-Ch 2 S = 5, = 3.5 fs Forward Transconductance S P-Ch 2.4 S = -5, = -2.3 N-Ch 2. S = 24, GS = P-Ch -2. S = -24, GS = SS rain-to-source Leakage Current µ N-Ch 25 S = 24, GS =, T J = 25 C P-Ch -25 S = -24, GS =, T J = 25 C GSS Gate-to-Source Forward Leakage N-P ± n GS = ±2 Q N-Ch 6.9 4 g Tota Gate Charge N-Channe P-Ch 6. 2 N-Ch. 2. =.8, S =, GS = Q gs Gate-to-Source Charge nc P-Ch.7 3.4 P-Channe Q N-Ch.8 3.5 gd Gate-to-rain ("Mier") Charge P-Ch. 2.2 = -2.3, S = -, GS = - t N-Ch 6.2 2 d(on) Turn-On eay Time P-Ch 9.7 9 N-Channe N-Ch 8.8 8 =, =., R G = 6.Ω, t r Rise Time R P-Ch 4 28 = Ω ns t N-Ch 3 26 d(off) Turn-Off eay Time P-Channe P-Ch 2 4 t N-Ch 3. 6. = -, = -., R G = 6.Ω, f Fa Time R P-Ch 6.9 4 = Ω C N-Ch 9 iss nput Capacitance N-Channe P-Ch 9 GS =, S = 5, ƒ =.MHz C N-Ch 2 pf oss Output Capacitance P-Ch P-Channe C N-Ch 6 rss Reverse Transfer Capacitance P-Ch 54 GS =, S = -5, ƒ =.MHz Source-rain Ratings and Characteristics S SM S t rr Q rr Parameter Min. Typ. Max. Units Conditions Continuous Source Current (Body iode) N-Ch.7 P-Ch -.3 Pused Source Current (Body iode) N-Ch 6 P-Ch 6 iode Forward otage Reverse Recovery Time Reverse Recovery Charge N-Ch.82.2 T J = 25 C, S =.25, GS = ƒ P-Ch -.82 -.2 T J = 25 C, S = -.25, GS = ƒ N-Ch 27 53 ns N-Channe P-Ch 27 54 T J = 25 C, F =.25, di/dt = /µs N-Ch 28 57 nc P-Channe P-Ch 3 62 T J = 25 C, F = -.25, di/dt = /µs Notes: Repetitive rating; puse width imited by Puse width 3µs; duty cyce 2%. max. junction temperature. ( See fig. 23 ) N-Channe S 2., di/dt /µs, (BR)SS, T J 5 C Surface mounted on FR-4 board, t sec. P-Channe S -.3, di/dt 84/µs, (BR)SS, T J 5 C ƒ N-Channe Starting T J = 25 C, L = 22mH R G = 25Ω, S = 2.. (See Figure 2) P-Channe Starting T J = 25 C, L = 67mH R G = 25Ω, S = -.3.
N-Channe RF9952, rain-to-source Current () GS TOP 5 7. 5.5 4.5 4. 3.5 BOTTOM 3. 3. 2µs PULSE WTH T J = 25 C. S, rain-to-source otage (), rain-to-source Current () GS TOP 5 7. 5.5 4.5 4. 3.5 BOTTOM 3. 3. 2µs PULSE WTH T J = 5 C. S, rain-to-source otage () Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics, rain-to-source Current () T J = 25 C T = 5 C J S = 2µs PULSE WTH 3. 3.5 4. 4.5 5. 5.5 6. GS, Gate-to-Source otage () S, Reverse rain Current () T J= 5 C T J= 25 C GS =..4.6.8..2.4 S, Source-to-rain otage () Fig 3. Typica Transfer Characteristics Fig 4. Typica Source-rain iode Forward otage
N-Channe R S(on), rain-to-source On Resistance (Normaized) 2. = 2.2.5..5 GS =. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature( C) R S (on), rain-to-source On Resistance (Ω).2..8.6 GS = 4.5 GS =.4 2 4 6 8 2, rain Current () Fig 5. Normaized On-Resistance s. Temperature Fig 6. Typica On-Resistance s. rain Current R S (on), rain-to-source On Resistance (Ω).6.4.2..8.6.4.2 = 3.5. 3 6 9 2 5 GS, Gate-to-Source otage () E S, Singe Puse vaanche Energy (mj) 8 6 4 2 TOP.89.6 BOTTOM 2. 25 5 75 25 5 Starting T J, Junction Temperature ( C) Fig 7. Typica On-Resistance s. Gate otage Fig 8. Maximum vaanche Energy s. rain Current
N-Channe RF9952 C, Capacitance (pf) 35 3 25 2 5 5 GS =, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss C rss GS, Gate-to-Source otage () 2 6 2 8 4 =.8 S = S, rain-to-source otage () 2 4 6 8 Q G, Tota Gate Charge (nc) Fig 9. Typica Capacitance s. rain-to-source otage Fig. Typica Gate Charge s. Gate-to-Source otage Therma Response (Z thj ).5.2..5.2 PM. t SNGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T...... t, Rectanguar Puse uration (sec) Fig. Maximum Effective Transient Therma mpedance, Junction-to-mbient
P-Channe -, rain-to-source Current () GS TOP - 5 - - 7. - 5.5-4.5-4. - 3.5 BOTTOM - 3. -3. 2µs PULSE WTH. T J = 25 C. - S, rain-to-source otage () -, rain-to-source Current () GS TOP - 5 - - 7. - 5.5-4.5-4. - 3.5 BOTTOM - 3. -3. 2µs PULSE WTH. T J = 5 C. - S, rain-to-source otage () Fig 2. Typica Output Characteristics Fig 3. Typica Output Characteristics -, rain-to-source Current () T J = 25 C T J= 5 C S = - 2µs PULSE WTH. 3. 4. 5. 6. 7. 8. -, Gate-to-Source otage () GS - S, Reverse rain Current () T J = 5 C T J = 25 C GS =..4.6.8..2.4 - S, Source-to-rain otage () Fig 4. Typica Transfer Characteristics Fig 5. Typica Source-rain iode Forward otage
P-Channe RF9952 R S(on), rain-to-source On Resistance (Normaized) 2. = -..5..5 GS = -. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature( C) R S(on), rain-to-source On Resistance ( Ω ) 2.5 2..5..5. GS = -4.5.. 2. 3. 4. 5. -, rain Current () GS = - Fig 6. Normaized On-Resistance s. Temperature Fig 7. Typica On-Resistance s. rain Current R S(on), rain-to-source On Resistance ( Ω ).8.6.4.2. = -2.3 3 6 9 2 5 - GS, Gate-to-Source otage () E S, Singe Puse vaanche Energy (mj) 5 2 9 6 3 TOP -.58 -. BOTTOM -.3 25 5 75 25 5 Starting T, Junction Temperature( J C) Fig 8. Typica On-Resistance s. Gate otage Fig 9. Maximum vaanche Energy s. rain Current
P-Channe C, Capacitance (pf) 4 3 2 GS =, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss C rss - GS, Gate-to-Source otage () 2 6 2 8 4 = -2.3 S =- - S, rain-to-source otage () 2 4 6 8 Q G, Tota Gate Charge (nc) Fig 2. Typica Capacitance s. rain-to-source otage Fig 2. Typica Gate Charge s. Gate-to-Source otage Therma Response (Z thj ).5.2..5.2. SNGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T...... t, Rectanguar Puse uration (sec) PM t Fig 22. Maximum Effective Transient Therma mpedance, Junction-to-mbient
SO-8 Package etais E 6 6X 5 8 7 6 5 2 3 4 e B H.25 [.] M NCHES MLLMET ERS MN MX MN MX.532.4.688.98.35..75.25 b.3.2.33.5 c.75.98.9.25 E e e H K L y.89.968.497.574.5 BSC.27 BSC.25 BSC.635 BSC.2284.244.99.96.6.5 8 4.8 5. 3.8 4. 5.8 6.2.25.5.4.27 8 e C y K x 45 8X b.25 [.] C B SO-8 Part Marking. [.4] NOT ES :. MENSONNG & TOLERNCNG PER SME Y4.5M-994. 2. CONTROLLNG MENS ON: MLLMETER 3. MENSONS RE SHOWN N MLLMETERS [NCHES ]. 4. OUTLNE CONFORMS TO JEEC OUTLNE MS -2. 5 MENSON OES NOT NCLUE MOL PROTRUSONS. MOL PROTRUSONS NOT TO EXCEE.5 [.6]. 6 MENSON OES NOT NCLUE MOL PROTRUSONS. MOL PROTRUSONS NOT TO EXCEE.25 [.]. 7 MENSON S THE LENGTH OF LE FOR SOLERNG TO SUBSTRTE. 8X L 8X c 7 6.46 [.255] 3X.27 [.5] F OOT PRNT 8X.72 [.28] 8X.78 [.7] EXMPLE: THS S N RF7 (MOSFET) NTERNTONL RECTFER LOGO XXXX F7 TE COE (YWW) P = ES GNTES LE-FREE PROUCT (OPTONL) Y = LST GT OF THE YER WW = WEEK = SSEMBLY STE COE LOT COE PRT NUMBER
SO-8 Tape & Ree nformation imensions are shown in miimeters (inches) TERMNL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE RECTON NOTES:. CONTROLLNG MENSON : MLLMETER. 2. LL MENSONS RE SHOWN N MLLMETERS(NCHES). 3. OUTLNE CONFORMS TO E-48 & E-54. 33. (2.992) MX. NOTES :. CONTROLLNG MENSON : MLLMETER. 2. OUTLNE CONFORMS TO E-48 & E-54. 4.4 (.566 ) 2.4 (.488 ) R WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 9245, US Te: (3) 252-75 TC Fax: (3) 252-793 isit us at www.irf.com for saes contact information.6/5