iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g Compliant to RoH irective /95/EC APPLICATION Primary ide witch O- 3 7 G G 5 Top View Ordering Information: iy-t-e3 (Lead (Pb)-free) iy-t-ge3 (Lead (Pb)-free and Halogen-free) N-Channel MOFET ABOLUTE MAXIMUM RATING T A = 5 C, unless otherwise noted Parameter ymbol s teady tate Unit rain-ource Voltage V V Gate-ource Voltage V G ± Continuous rain Current (T J = 5 C) a T A = 5 C..7 I T A = 7 C.7.3 A Pulsed rain Current I M ingle Avalanch Current I A 3 L = mh ingle Avalanch Energy E A.5 mj Continuous ource Current (iode Conduction) a I.. A T A = 5 C Maximum Power issipation a.5.5 P W T A = 7 C..9 Operating Junction and torage Temperature Range T J, T stg - 55 to 5 C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient a t s 37 5 R thja teady tate 5 C/W Maximum Junction-to-Foot (rain) teady tate R thjf 7 Notes: a. urface Mounted on " x " FR board. ocument Number: 75 9-75-Rev. C, 7-Apr-9
iy PECIFICATION T J = 5 C, unless otherwise noted Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic Gate Threshold Voltage V G(th) V = V G, I = 5 µa. V Gate-Body Leakage I G V = V, V G = ± V ± na V = V, V G = V Zero Gate Voltage rain Current I V = V, V G = V, T J = 55 C 5 µa On-tate rain Current a I (on) V 5 V, V G = V A V G = V, I =. A rain-ource On-tate Resistance a 95. R (on) V G =. V, I =. A.. Ω Forward Transconductance a g fs V = 5 V, I =. A. iode Forward Voltage a V I =. A, V G = V.. V ynamic b Total Gate Charge Q g Gate-ource Charge Q gs V = V, V G = V, I =. A.5 nc Gate-rain Charge Q gd 3. Gate Resistance R g.5 Ω Turn-On elay Time t d(on) 5 Rise Time t r V = V, R L = Ω Turn-Off elay Time t d(off) I A, V GEN = V, R g = Ω 5 5 ns Fall Time t f 5 5 ource-rain Reverse Recovery Time t rr I F =. A, di/dt = A/µs 9 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERITIC 5 C, unless otherwise noted V G = thru 5 V - rain Current (A) I V - rain Current (A) I T C = 5 C 5 C 3 V - 55 C 3 5 V - rain-to-ource Voltage (V) Output Characteristics V G - Gate-to-ource Voltage (V) Transfer Characteristics ocument Number: 75 9-75-Rev. C, 7-Apr-9
iy TYPICAL CHARACTERITIC 5 C, unless otherwise noted. - On-Resistance (Ω) R (on).3. V G = V V G = V C - Capacitance (pf) C iss C rss C oss. I - rain Current (A) On-Resistance vs. rain Current V - rain-to-ource V oltage (V) Capacitance.5 - Gate-to-ource Voltage (V) V G V = V I =. A - On-Resistance (Normalized) R (on)..5..5 V G = V I =. A 3 9 Q g - Total Gate Charge (nc) Gate Charge. - 5-5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.5 - ource Current (A) T J = 5 C - On-Resistance (Ω)..3. I =. A I T J = 5 C R (on)...... V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage. V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage ocument Number: 75 9-75-Rev. C, 7-Apr-9 3
iy TYPICAL CHARACTERITIC 5 C, unless otherwise noted. 5. I = 5 µa Variance (V) V G(th). -. Power (W) 3 -. -. - 5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage.. Time (s) ingle Pulse Power Limited by R ()on * I (on) Limited I M Limited P(t) =. - rain Current (A) T A = 5 C ingle Pulse P(t) =. P(t) =. P(t) = P(t) = I. P(t) = C BV Limited. V - rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area Normalized Effective Transient Thermal Impedance uty Cycle =.5..5. 3. T JM - T A = P M Z (t) thja ingle Pulse. urface Mounted. - -3 - - Notes: quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t t. uty Cycle, = t. Per Unit Base = R thja = C/W ocument Number: 75 9-75-Rev. C, 7-Apr-9
iy TYPICAL CHARACTERITIC 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance uty Cycle =.5..5.. - ingle Pulse -3 - quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?75. ocument Number: 75 9-75-Rev. C, 7-Apr-9 5
Package Information OIC (NARROW): -LEA JEEC Part Number: M- 7 5 E H 3 A.5 mm (Gage Plane) h x 5 C All Leads e B A L q mm." MILLIMETER INCHE IM Min Max Min Max A.35.75.53.9 A... B.35.5.. C 9.5.75.. 5. 9 9 E 3.. 5 57 e.7 BC.5 BC H 5.... h.5.5.. L.5.93..37 q.... ECN: C-57-Rev. I, -ep- WG: 59 ocument Number: 79 -ep-
Application Note RECOMMENE MINIMUM PA FOR O- 7 (.39). (.7) APPLICATION NOTE.7 (.9). (.) 5 (3.). (.559).5 (.7) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: 7 Revision: -Jan-
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