UB2-6NOX Sandard ecifier Module M = 6 I = 8 D 3~ ecifier I SM = Brake hopper ES = 2 I = 8 25 E(sa) =.7 3~ ecifier Bridge + Brake Uni Par number UB2-6NOX M/O S Backside: isolaed ~6 ~E6 ~K6 U/ W M/O W U S/T eaures / dvanages: pplicaions: Package: 2-Pack Package wih DB ceramic base plae Improved emperaure and power cycling Planar passivaed chips ery low forward volage drop ery low leakage curren X2PT - 2nd generaion Xreme ligh Punch Through ugged X2PT design resuls in: - shor circui raed for µsec. - very low gae charge - low EMI - square BSO @ 2x Ic Thin wafer echnology combined wih X2PT design resuls in a compeiive low E(sa) and low hermal resisance 3~ ecifier wih brake uni for drive inverers Isolaion olage: 36 ~ Indusry sandard ouline ohs complian Soldering pins for PB mouning Heigh: 7 mm Base plae: DB ceramic educed weigh dvanced power cycling Terms ondiions of usage: The daa conained in his produc daa shee is exclusively inended for echnically rained saff. The user will have o evaluae he suiabiliy of he produc for he inended applicaion and he compleeness of he produc daa wih respec o his applicaion. The specificaions of our componens may no be considered as an assurance of componen characerisics. The informaion in he valid applicaion- and assembly noes mus be considered. Should you require produc informaion in excess of he daa given in his produc daa shee or which concerns he specific applicaion of your produc, please conac your local sales office. Due o echnical requiremens our produc may conain dangerous subsances. or informaion on he ypes in quesion please conac your local sales office. Should you inend o use he produc in aviaion, in healh or life endangering or life suppor applicaions, please noify. or any such applicaion we urgenly recommend - o perform join risk and qualiy assessmens; - he conclusion of qualiy agreemens; - o esablish join measures of an ongoing produc survey, and ha we may make delivery dependen on he realizaion of any such measures. 27 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 2745g
UB2-6NOX ecifier Symbol SM M I I Definiion = 6 = 6 aings yp. max. 7 forward volage drop I = 6.6 T = 9 hermal resisance juncion o case.6 K/W D max. non-repeiive reverse blocking volage reverse curren I = ondiions 6 hreshold volage T = 5.8 for power loss calculaion only r slope resisance 4.4 mω hj hh max. repeiive reverse blocking volage bridge oupu curren hermal resisance case o heasink I = 8 I = 8 recangular d = ⅓ P o oal power dissipaion 25 W I SM max. forward surge curren = ms; (5 Hz), sine T = 45 = 8,3 ms; (6 Hz), sine = = ms; (5 Hz), sine = 8,3 ms; (6 Hz), sine J juncion capaciance = 4 ; f = MHz 37 T = 5 I² value for fusing = ms; (5 Hz), sine T = 45 = 8,3 ms; (6 Hz), sine = ms; (5 Hz), sine = 8,3 ms; (6 Hz), sine T = 5 T = 5 = = = min..2 6 2.55.9.59 8..9 4.37 4.25 Uni µ m K/W k²s k²s k²s k²s p 935. 6.5 5.89 k k k 27 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 2745g
UB2-6NOX Brake IGBT + Diode Symbol ES S M I 25 I 8 Definiion collecor emier volage collecor curren ondiions max. 2 P o oal power dissipaion T = 25 5 W E(sa) collecor emier sauraion volage I = ; = 5 T = 25.7 2. (h) gae emier hreshold volage I = 4 m; = I ES collecor emier leakage curren = ; = I S BSO max. D gae volage max. ransien gae emier volage min. aings yp. 8 4 Uni 7.5 urn-on delay ime 23 ns reverse bias safe operaing area E E ES gae emier leakage curren = ±2 T = 8 6.9 6.8 ±2 ±3. 3 m. m QG(on) oal gae charge E = 6 ; = 5 ; I = 34 n E E d(on) r d(off) f on off I M SSO S curren rise ime urn-off delay ime curren fall ime urn-on energy per pulse urn-off energy per pulse shor circui safe operaing area shor circui duraion inducive load = 6 ; I = E = ±5 ; = 6.8 Ω = ±5 ; = 6.8 Ω EK = 2 EK = 2 = 72 ; = ±5 E G G 5 7 ns 38 ns 23 ns 2.5 mj.5 mj I shor circui curren S G = 6.8Ω; non-repeiive 45 hj hh hermal resisance juncion o case hermal resisance case o heasink..25 n µs K/W K/W Brake Diode M I 25 max. repeiive reverse volage forward curren I 8 T = 8 forward volage I = 3 I reverse curren = M Q I rr M rr reverse recovery charge max. reverse recovery curren reverse recovery ime = -di /d = /µs I = 6 3.6 2 48 32 2.75.25 m m 5.2 µ 5 3 ns reverse recovery energy.9 mj hj hermal resisance juncion o case.9 K/W hh hermal resisance case o heasink.3 K/W 27 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 2745g
UB2-6NOX Package aings Symbol Definiion ondiions min. yp. max. Uni I MS MS curren per erminal T virual juncion emperaure -4 5 T op operaion emperaure -4 25 Weigh M D dspp/pp dspb/pb 2-Pack T sg sorage emperaure -4 25 ISOL mouning orque 2 creepage disance on surface sriking disance hrough air isolaion volage = second = minue erminal o erminal erminal o backside 5/6 Hz, MS; I ISOL m 6. 2. 36 3 76 2.5 g Nm mm mm Daa Marix: Typ (-9), D+Prod.Index (2-25), KT# (26-3) leer (33), lfd.# (33-36) Par Number Lo.No: xxxxxx yyww UL Dae code Prod. Index Ordering Sandard Ordering Number Marking on Produc Delivery Mode Quaniy ode No. UB2-6NOX UB2-6NOX Box 6 52475 Similar Par Package olage class UB2-6NOXT 2-Pack 6 Equivalen ircuis for Simulaion * on die level T = 5 I ecifier Brake Diode max hreshold volage.8 max slope resisance * 3.2.3 8 mω 27 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 2745g
UB2-6NOX Oulines 2-Pack Marking emarks: EJOT PT self-apping screws of he dimension K25 are recommended for he mechanical connecion beween module and PB. hoose he righ lengh according o your board hickness a a maximum deph of 6 mm of he module holes. The recommended mouning orque is.5 Nm. M/O S ~6 ~E6 ~K6 U/ W M/O W U S/T 27 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 2745g
UB2-6NOX ecifier 2 T = 25 9 4 5 T = 25 8 T = 45 T = 45 I I SM 7 6 I 2 [ 2 s] T = 5 5 5 T = 5..5..5 2. [] 5Hz, 8% M 4... [s] 3 2 3 4 5 6 7 8 9 [ms] ig. orward curren vs. volage drop per diode ig. 2 Surge overload curren vs. ime per diode ig. 3 I 2 vs. ime per diode 8 6 P o 4 [W] 2 D =.5.4.33.7.8 h :. K/W.3 K/W.6 K/W. K/W.5 K/W 2.5 K/W I d 4 2 8 6 4 2 D =.5.4.33.7.8 2 3 4 5 6 7 2 4 6 8 2 4 6 I ()M T amb [ ] ig. 4 Power dissipaion vs. forward curren and ambien emperaure per diode 25 5 75 25 5 T [ ] ig. 5 Max. forward curren vs. case emperaure per diode.6.5.4 Z hj.3 [K/W].2.. [s] onsans for Z hj calculaion: i h (K/W) i (s).4.4 2.3. 3.4.3 4.2.3 5.97.8 ig. 6 Transien hermal impedance juncion o case vs. ime per diode 27 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 2745g
UB2-6NOX Brake IGBT + Diode 2 2 = 9 7 5 3 2 E = 2 5 25 5 5 I 25 I T = 5 I 5 5 9 5 25 25 E on 2..5..5 2. 2.5 3. 4 3 E [] ig. Oupu characerisics IGBT G = 6.8 E = 6 = ±5 T = 25 E on d(on) 5 5 2 I 4 3 r 2 ig. 4 Typ. urn-on energy & swich. imes vs. collecor curren r [ns] 2 3 4 5 4 E off 3 2 E [] ig.2 Typ. oupu characerisics IGBT E off G = 6.8 E = 6 = ±5 T = 25 d(off) 5 5 2 I 5 4 3 [ns] 2 ig. 5 Typ. urn-off energy & swich. imes vs. collecor curren f 6 5 4 I 3 6 7 8 9 2 3 2 [] ig. 3 Typ. ransfer charac. IGBT 25 25..5..5 2. 2.5 [] ig. 6 Typ. forward characerisics Diode 8 6 4 2 G = 6.8 = 6 T = 25 2 3 4 5 6 I ig. 7 Typ. reverse recovery characerisics Diode 8 6 4 2 2.5 2..5..5 T = 25 = 6 I = 3. 4 8 2 6 2 24 G [Ohm] ig. 8 Typ. reverse recovery characerisics Diode 25 75 5 25 Z hj. [K/W] Diode IGBT IGBT Diode i i i i.5..365.5.35..8.3.2.3.255.397..45.8..... [s] ig. 9 Transien hermal resisance juncion o case 27 IXYS all righs reserved Daa according o IE 6747and per semiconducor unless oherwise specified 2745g