N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration ingle 5 6 ORERING INFORMATION Package Lead (Pb)-free and halogen-free 7 3 FEATURE TrenchFET power MOFET Low thermal resistance PowerPAK package % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 APPLICATION Primary side switch ynchronous rectification C/C converter Lighting Industrial PowerPAK O-8 i79ap-t-re3 G N-Channel MOFET ABOLUTE MAXIMUM RATING (, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rain-source voltage V 5 V Gate-source voltage V G ± T C = 5 C 4.4 T C = 7 C.5 Continuous drain current (T J = 5 C) I 4.3 a, b T A = 7 C 3.4 a, b A Pulsed drain current (t = μs) I M 3 T C = 5 C 47.3 Continuous source-drain diode current I 4. a, b ingle pulse avalanche current I A 9 L = mh ingle pulse avalanche energy E A 4.5 mj T C = 5 C 56.8 T C = 7 C 36.4 Maximum power dissipation P W 5 a, b T A = 7 C 3. a, b Operating junction and storage temperature range T J, T stg -55 to +5 C oldering recommendations (peak temperature) a 6 THERMAL REITANCE RATING PARAMETER YMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient a t s R thja 5 Maximum junction-to-case (drain) teady state R thjc.7. C/W Notes a. urface mounted on " x " FR4 board b. t = s c. ee solder profile (www.vishay.com/doc?7357). The PowerPAK O-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components e. Maximum under steady state conditions is 68 C/W f. T C = 5 C 7-43-Rev. A, -ep-7 ocument Number: 75633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i79ap PECIFICATION (T J = 5 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rain-source breakdown voltage V V G = V, I = 5 μa 5 - - V V temperature coefficient V /T J - 6 - I = 5 μa V G(th) temperature coefficient V G(th) /T J - -7 - mv/ C Gate-source threshold voltage V G(th) V = V G, I = 5 μa - 4 V Gate-source leakage I G V = V, V G = ± V - - na V = 5 V, V G = V - - Zero gate voltage drain current I V = 5 V, V G = V, T J = 7 C - - μa On-state drain current a I (on) V 5 V, V G = V - - A rain-source on-state resistance a V G = V, I = 4.3 A -.85. R (on) V G = 7.5 V, I = 4. A -.88 Forward transconductance a g fs V = 5 V, I = 4.3 A - - ynamic b Input capacitance C iss - 86 - Output capacitance C oss V = V, V G = V, f = MHz - 85 - pf Reverse transfer capacitance C rss - 7 - V = 5 V, V G = V, I = 4.3 A - 4.9.4 Total gate charge Q g -.7 7.6 nc Gate-source charge Q gs V = 5 V, V G = 7.5 V, I = 4.3 A - 3.9 - Gate-drain charge Q gd - 3.7 - Output charge Q oss V = 5 V, V G = V - 4.5 37 Gate resistance R g f = MHz.48.4 4.8 Turn-on delay time t d(on) - 3 3 Rise time t r V = 5 V, R L = 36.8, I 3.4 A, - 5 5 Turn-off delay time t d(off) V GEN = V, R g = - 3 4 Fall time t f - Turn-on delay time t d(on) - 5 3 ns Rise time t r V = 5 V, R L = 36.8, I 3.4 A, - 7 5 Turn-off delay time t d(off) V GEN = 7.5 V, R g = - 5 4 Fall time t f - 5 rain-ource Body iode Characteristics Continuous source-drain diode current I T C = 5 C - - 47.3 Pulse diode forward current I M - - 3 A Body diode voltage V I = 3.4 A, V G = V -.75. V Body diode reverse recovery time t rr - 5 ns Body diode reverse recovery charge Q rr - 4 63 nc I F = 3.4 A, di/dt = A/μs, T J = 5 C Reverse recovery fall time t a - 7 - ns Reverse recovery rise time t b - 3 - Notes a. Pulse test; pulse width 3 μs, duty cycle % b. Guaranteed by design, not subject to production testing tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 7-43-Rev. A, -ep-7 ocument Number: 75633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i79ap TYPICAL CHARACTERITIC (5 C, unless otherwise noted) 3 3 5 V G = V thru 6 V 4 5 5 V G = 5 V V G = 4 V 3 4 5 V - rain-to-ource Voltage (V) 8 6 T C = 5 C T C = 5 C T C =-55 C 3 4 5 6 V G - Gate-to-ource Voltage (V) Output Characteristics Transfer Characteristics R (on) - On-Resistance (Ω)..9.8 V G = 7.5 V V G = V C - Capacitance (pf) 5 5 C oss C iss C rss.7 5 5 5 3 4 6 8 V - rain-to-ource Voltage (V) On-Resistance vs. rain Current and Gate Voltage Capacitance V G - Gate-to-ource Voltage (V) 8 6 4 I = 4.3 A V = 63 V V = 5 V V = V 3 6 9 5 Q g - Total Gate Charge (nc) R (on) - On-Resistance (Normalized).8.4..6..8 V G = V, I = 4.3 A.4-5 -5 5 5 75 5 5 T J - Junction Temperature ( C) V G = 7.5 V, 4. A Gate Charge On-Resistance vs. Junction Temperature 7-43-Rev. A, -ep-7 3 ocument Number: 75633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i79ap TYPICAL CHARACTERITIC (5 C, unless otherwise noted) 3.5 I = 5 μa I - ource Current (A) T J = 5 C T J = 5 C V G(th) (V) 3..7.3..3.6.9. V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage.9-5 -5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage.3 R (on) - On-Resistance (Ω). T J = 5 C T J = 5 C Power (W) 8 6 4 4 6 8 V G - Gate-to-ource Voltage (V).. Time (s) On-Resistance vs. Gate-to-ource Voltage ingle Pulse Power, Junction-to-Ambient I M limited Limited by R () (on) μs ms ms ms s, s. C BV limited ingle pulse. V - rain-to-ource Voltage (V) () V G > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient 7-43-Rev. A, -ep-7 4 ocument Number: 75633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i79ap TYPICAL CHARACTERITIC (5 C, unless otherwise noted) 6 8 4 5 5 75 5 5 T C - Case Temperature ( C) Current erating a 7.4 56.8 Power (W) 4 8 Power (W). 4.6 5 5 75 5 5 T C - Case Temperature ( C). 5 5 75 5 5 T A - Ambient Temperature ( C) Power, Junction-to-Case Power, Junction-to-Ambient Note a. The power dissipation P is based on T J max. = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit 7-43-Rev. A, -ep-7 5 ocument Number: 75633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i79ap TYPICAL CHARACTERITIC (5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. uty Cycle =.5. Notes: P M.5 t t t..uty Cycle, = t. Per Unit Base = R thja = 65 C/W 3. T JM - T A = P M Z (t) thja ingle Pulse 4. urface Mounted -4-3 - 6 quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - uty Cycle =.5 Normalized Effective Transient Thermal Impedance...5. -4 ingle Pulse -3 - quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75633. 7-43-Rev. A, -ep-7 6 ocument Number: 75633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
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