MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant GATE 2 SOURCE 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc GateSource Voltage V GS 25 Vdc Gate Current I G madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (Note 1) Derate above 25 C P D 225 1.8 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 556 C/W Junction and Storage Temperature T J, T stg 55 to +15 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR5 = 1. x.75 x.62 in. 1 2 SOT2 (TO26) CASE 18 STYLE MARKING DIAGRAM 1 6x M 6x = Device Code x = U for MMBFJ9L, SMMBFJ9L x = T for MMBFJL, SMMBFJL M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBFJ9LT1G, SMMBFJ9LT1G MMBFJLT1G, SMMBFJLT1G SMMBFJLTG SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree), / Tape &, / Tape &, / Tape & For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Packaging Specifications Brochure, BRD811/D. Semiconductor Components Industries, LLC, 21 October, 21 Rev. 7 1 Publication Order Number: MMBFJ9LT1/D
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage (I G = 1. Adc, V DS = ) V (BR)GSS 25 Vdc Gate Reverse Current (V GS = 15 Vdc) Gate Reverse Current (V GS = 15 Vdc, T A = 125 C) I GSS 1. 1. nadc Adc Gate Source Cutoff Voltage MMBFJ9 (V DS = Vdc, I D = 1. nadc) MMBFJ, SMMBFJ V GS(off) 1. 2. 4. 6.5 Vdc ON CHARACTERISTICS ZeroGateVoltage Drain Current MMBFJ9 (V DS = Vdc, V GS = ) MMBFJ, SMMBFJ I DSS 12 6 madc GateSource Forward Voltage (I G = 1. madc, V DS = ) SMALLSIGNAL CHARACTERISTICS Forward Transfer Admittance (V DS = Vdc, I D = madc, f = 1. khz) Output Admittance (V DS = Vdc, I D = madc, f = 1. khz) Input Capacitance (V GS = Vdc, V DS = Vdc, f = 1. MHz) Reverse Transfer Capacitance (V GS = Vdc, V DS = Vdc, f = 1. MHz) V GS(f) 1. Vdc 8. 18 mmhos y os 25 mhos C iss 5. pf C rss 2.5 pf Equivalent ShortCircuit Input Noise Voltage (V DS = Vdc, I D = madc, f = Hz) e n nv Hz 2
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL I D, DRAIN CURRENT (ma) 7 6 5 4 2 V DS = V I DSS T A = - 55 C - 55 C +15 C +15 C -5. -4. -. -2. -1. I D - V GS, GATE-SOURCE VOLTAGE (VOLTS) I DSS - V GS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 7 6 5 4 2, SATURATION DRAIN CURRENT (ma) I DSS Figure 1. Drain Current and Transfer Characteristics versus GateSource Voltage, FORWARD TRANSCONDUCTANCE ( mhos) μ k k 1. k Y os V GS(off) = - 2. V = V GS(off) = - 5.7 V = 1..1.1.2..5 1. 2.. 5. 2 5 I D, DRAIN CURRENT (ma) 1. k, OUTPUT ADMITTANCE ( mhos) Y os μ CAPACITANCE (pf) 7. 4. 1. 9. R DS C gs C gd 8. 7. 6. 5. 4.. 2. 1. V GS, GATE SOURCE VOLTAGE (VOLTS) 12 96 72 48 R DS, ON RESISTANCE (OHMS) Figure 2. CommonSource Output Admittance and Forward Transconductance versus Drain Current Figure. On Resistance and Junction Capacitance versus GateSource Voltage
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL. S 21, S 11.85.45 S 12, S 22.6 1. Y11, Y21, Y22 (mmhos) 18 12 6. V DS = V I D = ma Y 11 Y 21 Y 22 2.4 1.8 1.2.6 Y 12 (mmhos).79.7.67.61.9..27.21 V DS = V I D = ma S 21 S 11 S 22.48.6..12.98.96.94.92 Y 12 2 5 7.55 S 12.15 2 5 7.9 Figure 4. CommonGate Y Parameter Magnitude versus Frequency Figure 5. CommonGate S Parameter Magnitude versus Frequency 21, 18 5 22 12, 22-2 87-2, 12-2 12 21, 22 17 4 21-4 - 6 86-4 21 22-2 16-8 85-6 8-4 - 15 14 1 12 2 V DS = V I D = ma 2 5 7-12 - 14-16 - 18-2 84 8 82-8 - - 12 6 12 4 V DS = V I D = ma 2 2 5 7 21-6 - 8 - Figure 6. CommonGate Y Parameter PhaseAngle versus Frequency Figure 7. S Parameter PhaseAngle versus Frequency 4
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL PACKAGE DIMENSIONS A E A1 D 1 2 e b HE SEE VIEW C L L1 VIEW C SOT2 (TO26) CASE 188 ISSUE AP c.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89 1. 1.11.5.4.44 A1.1.6..1.2.4 b.7.44.5.15.18.2 c.9.1.18..5.7 D 2.8 2.9.4.1.114.12 E 1.2 1. 1.4.47.51.55 e 1.78 1.9 2.4.7.75.81 L..2..4.8.12 L1.5.54.69.14.21.29 H E 2. 2.4 2.64.8.94.4 STYLE : PIN 1. DRAIN 2. SOURCE. GATE.95.7 SOLDERING FOOTPRINT*.95.7 2..79.9.5.8.1 SCALE :1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 516, Denver, Colorado 8217 USA Phone: 6752175 or 84486 Toll Free USA/Canada Fax: 6752176 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 79 29 Japan Customer Focus Center Phone: 8158175 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBFJ9LT1/D