INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6μs SCSOA Square RBSOA 1% of the parts tested for I LM Positive V CE (on) Temperature Coefficient Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant Automotive Qualified * Benefits High Efficiency in a Wide Range of Applications Suitable for Applications in the Low to Mid-Rrange Frequencies Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI Absolute Maximum Ratings AUTOMOTIVE GRADE G C E n-channel AUIRGPS467D1 C V CES = 6V I C = 16A, T C = 1 C t SC 6μs, T J(max) = 175 C Super-247 AUIRGPS467D1 V CE(on) typ. = 1.7V G CE G C E Gate Collector Emitter Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 24g I C @ T C = 1 C Continuous Collector Current 16 I NOMINAL Nominal Current 12 I CM Pulse Collector Current, V GE = 15V 36 I LM Clamped Inductive Load Current, V GE = 2V c 48 A I F NOMINAL Diode Nominal Current d 12g I FM Diode Maximum Forward Current d 48 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P D @ T C = 25 C Maximum Power Dissipation 75 W P D @ T C = 1 C Maximum Power Dissipation 375 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Thermal Resistance PD - 97726C Parameter Min. Typ. Max. Units R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.2 R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f.44 C/W R CS Thermal Resistance, Case-to-Sink (flat, greased surface).24 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com 9/27/212
AUIRGPS467D1 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5μA e V (BR )CE S/ T J T emperature Coeff. of B reakdown Voltage.27 V/ C V GE = V, I C = 15mA (25 C-175 C) 1.7 2.5 I C = 12A, V GE = 15V, T J = 25 C V CE(on) Collector-to-Emitter Saturation Voltage 2.15 V I C = 12A, V GE = 15V, T J = 15 C 2.2 I C = 12A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage 4. 6.5 V V CE = V GE, I C = 5.6mA V GE (th)/ TJ Threshold Voltage temp. coefficient -17 mv/ C V CE = V GE, I C = 2mA (25 C - 175 C) gfe Forward Transconductance 85 S V CE = 5V, I C = 12A I CES Collector-to-Emitter Leakage Current 2.3 2 μa V GE = V, V CE = 6V 9.4 ma V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop 1.9 2.2 I F = 12A V 2. I F = 12A, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 24 36 I C = 12A Q ge Gate-to-Emitter Charge (turn-on) 69 14 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) 9 135 V CC = 4V E on Turn-On Switching Loss 8.2 1 I C = 12A, V CC = 4V, V GE = 15V E off Turn-Off Switching Loss 2.9 3.2 mj R G = 4.7, L = 87μH, T J = 25 C E total Total Switching Loss 11.1 13.2 E nergy los s es include tail & diode revers e recovery t d(on) Turn-On delay time 69 82 I C = 12A, V CC = 4V, V GE = 15V t r Rise time 65 82 ns R G = 4.7, L = 87μH, T J = 25 C t d(off) Turn-Off delay time 198 23 t f Fall time 38 48 E on Turn-On Switching Loss 1 I C = 12A, V CC = 4V, V GE=15V E off Turn-Off Switching Loss 3.8 mj R G = 4.7, L = 87μH, T J = 175 C e E total Total Switching Loss 13.8 E nergy los s es include tail & diode revers e recovery t d(on) Turn-On delay time 63 I C = 12A, V CC = 4V, V GE = 15V t r Rise time 64 ns R G = 4.7, L = 2μH t d(off) Turn-Off delay time 23 T J = 175 C t f Fall time 51 C ies Input Capacitance 778 pf V GE = V C oes Output Capacitance 55 V CC = 3V C res Reverse Transfer Capacitance 245 f = 1.Mhz T J = 175 C, I C = 48A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V Rg = 4.7, V GE = +2V to V SCSOA Short Circuit Safe Operating Area 6 μs V CC = 4V, Vp =6V Rg = 1., V GE = +15V to V Erec Reverse Recovery Energy of the Diode 244 μj T J = 175 C t rr Diode Reverse Recovery Time 36 ns V CC = 4V, I F = 12A I rr Peak Reverse Recovery Current 53 A V GE = 15V, Rg = 4.7, L =87μH Notes: V CC = 8% (V CES ), V GE = 2V, L =.87μH, R G = 5 tested in production I LM 4A. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. R is measured at T J of approximately 9 C. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is12a. Note that current limitations arising from heating of the device leads may occur. 2 www.irf.com
AUIRGPS467D1 Qualification Information Automotive (per AEC-Q11) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Super-247 N/A Machine Model Class M4 (+/- 4V) AEC-Q11-2 ESD Human Body Model Class H3B (+/- 8V) AEC-Q11-1 Charged Device Model Class C5 (+/- 1V) AEC-Q11-5 RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com Highest passing voltage. www.irf.com 3
I CE (A) I CE (A) I C (A) I C A) I C (A) P tot (W) AUIRGPS467D1 25 2 15 8 7 6 5 1 5 Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 25 5 75 1 125 15 175 T C ( C) 4 3 2 1 1 2 4 6 8 1 12 14 16 18 T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 1 1μsec 1 1μsec 1 1msec 1 Tc = 25 C Tj = 175 C Single Pulse DC.1 1 1 1 1 1 48 Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V 1 48 1 1 1 1 Fig. 4 - Reverse Bias SOA T J = 175 C; V GE =2V 42 36 3 24 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 42 36 3 24 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 18 18 12 12 6 6 1 2 3 4 5 6 7 8 9 1 1 2 3 4 5 6 7 8 9 1 Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 3μs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 3μs 4 www.irf.com
I CE (A) I F (A) AUIRGPS467D1 48 42 36 3 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 48 42 36 3 T J = -4 C T J = 25 C T J =175 C 24 24 18 12 6 1 2 3 4 5 6 7 8 9 1 Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 3μs 1 18 12 6. 1. 2. 3. 4. 5. V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 3μs 1 8 8 6 4 I CE = 6A I CE = 12A I CE = 195A 6 4 I CE = 6A I CE = 12A I CE = 195A 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C 1 8 6 4 I CE = 6A I CE = 12A I CE = 195A I C, Collector-to-Emitter Current (A) 48 42 36 3 24 18 T J = -4 C T J = 25 C T J = 175 C 12 2 6 5 1 15 2 V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 175 C 2 4 6 8 1 12 14 16 V GE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics V CE = 5V; tp = 1μs www.irf.com 5
I RR (A) I RR (A) Energy (μj) Swiching Time (ns) Energy (μj) Swiching Time (ns) AUIRGPS467D1 35 1 3 25 E ON td OFF 2 15 1 td ON 1 E OFF t F 5 t R 5 1 15 2 25 1 5 1 15 2 25 I C (A) I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 175 C; L =.87mH; V CE = 4V, R G = 5. ; V GE = 15V 35 3 Fig. 14 - Typ. Switching Time vs. I C T J = 175 C; L =.87mH; V CE = 4V, R G = 5. ; V GE = 15V 1 td OFF 25 E ON 1 2 td ON 15 E OFF t F 1 5 1 t R 2 4 6 8 1 12 R G ( ) Fig. 15 - Typ. Energy Loss vs. R G T J = 175 C; L =.87mH; V CE = 4V, I CE = 12A; V GE = 15V 6 1 25 5 75 1 R G ( ) Fig. 16 - Typ. Switching Time vs. R G T J = 175 C; L =.87mH; V CE = 4V, I CE = 12A; V GE = 15V 52 55 R G = 4.7 5 48 5 45 R G = 1 46 44 4 35 R G = 2 R G = 5 42 4 38 3 5 1 15 2 25 36 1 2 3 4 5 6 I F (A) R G ( Fig. 17 - Typ. Diode I RR vs. I F T J = 175 C Fig. 18 - Typ. Diode I RR vs. R G T J = 175 C 6 www.irf.com
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (μj) Time (μs) I RR (A) Q RR (nc) AUIRGPS467D1 6 35 55 3 5 45 4 35 3 2 4 6 8 1 12 14 di F /dt (A/μs) Fig. 19 - Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 12A; T J = 175 C 25 2 15 1 5 2 1 24A 12A 4.7 6A 5 2 4 6 8 1 12 14 16 di F /dt (A/μs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 15V; T J = 175 C 55 18 9 5 45 4 R G = 2 R G = 1 R G = 4.7 16 14 T sc I sc 8 7 35 3 R G = 5 12 1 6 5 Current (A) 25 2 15 8 6 4 3 1 1 5 1 15 2 25 3 35 I F (A) Fig. 21 - Typ. Diode E RR vs. I F T J = 175 C 4 2 8 1 12 14 16 18 V GE (V) Fig. 22 - V GE vs. Short Circuit Time V CC = 4V; T C = 25 C 16 14 V CES = 4V 1 Cies 12 V CES = 3V 1 1 Coes 8 6 1 Cres 4 2 1 1 2 3 4 5 5 1 15 2 25 Q G, Total Gate Charge (nc) Fig. 23 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 24 - Typical Gate Charge vs. V GE I CE = 12A www.irf.com 7
AUIRGPS467D1 1.1 D =.5 Thermal Response ( Z thjc ).1.1.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 J J 1 2 3 1 2 3 Ci= i Ri Ci i Ri Ri ( C/W) i (sec).564.253.888.3155.547.14893 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) C Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thjc ).1.1.1 D =.5.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 J J 1 1 2 2 3 3 Ci= i Ri Ci i Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) R 4 R 4 4 4 C Ri ( C/W) i (sec).597.16.1439.387.19117.496.1156.21245 Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com
AUIRGPS467D1 L L 1K DUT VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT 4X L DC DUT VCC -5V Rg DUT / DRIVER VCC R SH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R = VCC ICM 1K Rg DUT VCC G force D1 DUT 22K.75μF C sense E sense Fig.C.T.5 - Resistive Load Circuit E force Fig.C.T.6 - BVCES Filter Circuit www.irf.com 9
AUIRGPS467D1 6 18 6 18 5 15 5 15 V CE I CE 4 12 4 12 VCE (V) 3 2 9 6 ICE (A) VCE (V) 3 2 9 6 ICE (A) 1 3 1 3 V CE I CE -1-5E-8 E+ 5E-8 1E-6 2E-6-3 -1-5E-7 E+ 5E-7 1E-6 2E-6-3 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175 C using Fig. CT.4 time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 175 C using Fig. CT.4 16 8 8 7 I CE 7 12 6 6 8 5 5 V CE IF (A) 4 Vce (V) 4 3 4 3 Ice (A) 2 2-4 1 1-8 -5.E-7.E+ 5.E-7 1.E-6 time (ns) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 175 C using Fig. CT.4-1 -5.E-6.E+ 5.E-6 1.E-5 1.5E-5 time (µs) Fig. WF4 - Typ. S.C. Waveform @ T J = 25 C using Fig. CT.3-1 1 www.irf.com
AUIRGPS467D1 Case Outline and Dimensions Super-247 Super-247 (TO-274AA) Part Marking Information Part Number IR Logo AUPS467D1 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11
AUIRGPS467D1 Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRGPS467D1 Super-247 Tube 25 AUIRGPS467D1 12 www.irf.com
AUIRGPS467D1 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 11 N. Sepulveda Blvd., El Segundo, California 9245 Tel: (31) 252-715 www.irf.com 13