Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 150

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Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

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6MBI15VX125 IGBT MODULE (V series) 12V / 15A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Indusial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless otherwise specified) Items Symbols Conditions Maximum ratings Units CollectorEmitter voltage VCES 12 V GateEmitter voltage VGES ±2 V Ic Continuous Tc= C 15 Collector current Icp 1ms Tc=8 C 3 Ic 15 A Ic pulse 1ms 3 Collector power dissipation Pc 1 device 77 W Junction temperature Tj 175 Operating junci temperature Tjop 15 (under switching conditions) C Case temperature Tc 125 Storage temperature Tstg 4 to +125 between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) AC : 1min. 25 VAC Screw torque Mounting (*3) M5 3.5 N m Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.53.5 Nm (M5) Inverter 1 765a JULY 215

6MBI15VX125 Elecical characteristics (at Tj= 25 C unless otherwise specified) Items Symbols Conditions Inverter Thermistor Characteristics min. typ. max. Zero gate voltage collector current ICES VGE = V, VCE = 12V 1. ma GateEmitter leakage current IGES VGE = V, VGE = ±2V 2 na GateEmitter threshold voltage VGE (th) VCE = 2V, IC = 15mA 6. 6.5 7. V CollectorEmitter saturation voltage VCE (sat) (terminal) VCE (sat) (chip) VGE = 15V IC = 15A VGE = 15V IC = 15A Tj=25 C 2.4 2.85 Tj=125 C 2.7 Tj=15 C 2.75 Tj=25 C 1.75 2.2 Tj=125 C 2.5 Tj=15 C 2.1 Internal gate resistance Rg (int) 5. Ω Input capacitance Cies VCE = 1V, VGE = V, f = 1MHz 13.7 nf Turnon time Turnoff time Forward on voltage.39 1.2 (i) VCC = 6V IC = 15A VGE = +15 / 15V RG = 1.1Ω.9.3.53.6 1. tf.6.3 VF (terminal) VF (chip) IF = 15A IF = 15A Tj=25 C 2.35 2.8 Tj=125 C 2.5 Tj=15 C 2.45 Tj=25 C 1.7 2.15 Tj=125 C 1.85 Tj=15 C 1.8 Reverse recovery time r IF = 15A.35 µs Resistance R T = 25 C 5 T = C 465 495 52 B value B T = 25 / 5 C 335 3375 345 K Units V µs V Ω Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Thermal resistance (1device) Rth(jc) Inverter IGBT.195 Inverter FWD.34 Contact thermal resistance (1device) (*4) Rth(cf) with Thermal Compound.5 Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/W Equivalent Circuit Schematic 2

6MBI15VX125 Characteristics (Representative) Collector current vs. CollectorEmitter voltage (typ.) Tj= 25 o C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= 15 o C / chip 3 V GE =2V 15V 12V 3 V GE =2V 12V 25 2 15 5 1V 8V 25 2 15 5 15V 1V 8V 1 2 3 4 5 1 2 3 4 5 CollectorEmitter voltage: V CE [V] CollectorEmitter voltage: V CE [V] Collector current vs. CollectorEmitter voltage (typ.) V GE =15V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= 25 o C / chip 3 25 2 15 5 125 C Tj=25 C Tj=15 C C o l l e c t o r E m i t t e r v o l t a g e : V C E [ V ] 8 6 4 2 Ic=3A Ic=15A Ic= 75A 1 2 3 4 5 CollectorEmitter voltage: VCE[V] 5 1 15 2 25 Gate Emitter voltage: V GE [V] Capacitance vs. CollectorEmitter voltage (typ.) V GE =V, f= 1MHz, Tj= 25 o C Dynamic gate charge (typ.) Vcc=6V, Ic=15A, Tj= 25 C C a p a c i t a n c e : C i e s, C o e s, C r e s [ n F ]. 1. 1..1 Cies Coes Cres 1 2 3 4 C o l l e c t o r E m i t t e r v o l t a g e : V C E [ 2 V / d i v ] G a t e E m i t t e r v o l t a g e : V G E [ 5 V / d i v ] V CE V GE 16 16 Collector Emitter voltage: V CE [V] Gate charge: Qg [nc] 3

6MBI15VX125 Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=1.1Ω, Tj= 125 C Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=1.1Ω, Tj= 15 C S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] 1 tf 2 3 4 Collector current: I C [A] S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] C 1 2 3 4 Collector current: I [A] tf Switching time vs. gate resistance (typ.) Vcc=6V, Ic=15A, VGE=±15V, Tj= 125 C Switching loss vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=1.1Ω S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] tf 1.1 1. 1.. S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] 4 3 2 1 Eon(15 C) Eon(125 C) Eoff(15 C) Eoff(125 C) Err(15 C) Err(125 C) 2 3 4 Gate resistance : Rg [Ω] Collector current: I C [A] Switching loss vs. gate resistance (typ.) Vcc=6V, Ic=15A, VGE=±15V Reverse bias safe operating area (max.) +VGE=15V,VGE <= 15V, RG >= 1.1Ω,Tj = 15 C S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] 3 2 1 Eoff(15 C) Eoff(125 C) 1 1 Gate resistance : Rg [Ω] Eon(15 C) Eon(125 C) Err(15 C) Err(125 C) 4 3 2 RBSOA (Repetitive pulse) 2 4 6 8 12 14 16 CollectorEmitter voltage : VCE [V] (Main terminals) 4

6MBI15VX125 F o r w a r d c u r r e n t : I F [ A ] 3 25 2 15 5 Forward current vs. forward on voltage (typ.) chip Tj=25 C Tj=15 C Tj=125 C 1 2 3 4 R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ] R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ] 1 Reverse recovery characteristics (typ.) Vcc=6V, VGE=±15V, Rg=1.1Ω Irr(15 C) Irr(125 C) r(15 C) r(125 C) 2 3 4 Forward on voltage : V F [V] Forward current : I F [A] T h e r m a l r e s i s t a n s e : R t h ( j c ) [ C / W ] 1..1 Transient thermal resistance (max.) n 1 2 3 4 n [sec].23.31.598.78 r n IGBT.292.533.7491.4614 [ C/W] FWD.3647.9246.1362.845 Pulse width : Pw [sec] FWD[Inverter] IGBT[Inverter].1.1.1. 1. R e s i s t a n c e : R [ k Ω ] [ Thermistor ] Temperature characteristic (typ.) 1 1.1 6 4 2 2 4 6 8 12 14 16 18 Temperature [ C ] Outline Drawings, mm Weight:3g(typ.) 5

6MBI15VX125 WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and suctures as of July 215. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, ade secret or other intellectual property right owned by Fuji Elecic Co., Ltd. is (or shall be deemed) granted. Fuji Elecic Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Elecic Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Elecic semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products inoduced in this Catalog are intended for use in the following eleconic and elecical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Elecical home appliances Personal equipment Indusial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Elecic Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal conol equipment Gas leakage detectors with an autoshu feature Emergency equipment for responding to disasters and antiburglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring sict reliability such as the following and equivalents to sategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear conol equipment Submarine repeater equipment 7. Copyright 1996215 by Fuji Elecic Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Elecic Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Elecic Co., Ltd. or its sales agents before using the product. Neither Fuji Elecic Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with insuctions set forth herein. 6

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