pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized valanche Voltage and Current l 20V V GS Max. Gate Rating l 0% tested for Rg l Lead-Free 8 S S S G 2 3 4 7 6 5 HEXFET Power MOSFET V SS R S(on) max Qg 30V 3.7m:@V GS = V 30nC Top View SO-8 P - 97275 bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 30 V V GS Gate-to-Source Voltage ± 20 I @ T = 25 C Continuous rain Current, V GS @ V 2 I @ T = 70 C Continuous rain Current, V GS @ V 7 I M Pulsed rain Current c 70 P @T = 25 C Power issipation 2.5 W P @T = 70 C Power issipation Linear erating Factor.6 0.02 W/ C T J Operating Junction and -55 to 50 C Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead g 20 C/W R θj Junction-to-mbient fg 50 Notes through are on page 9 www.irf.com 08/29/07
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 30 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 0.023 V/ C R S(on) Static rain-to-source On-Resistance 3.0 3.7 mω 3.7 4.5 V GS(th) Gate Threshold Voltage.35 2.35 V V GS(th) Gate Threshold Voltage Coefficient -5.4 mv/ C V GS = 4.5V, I = 6 e V S = V GS, I = 0µ V S = V GS, I = 250µ I SS rain-to-source Leakage Current.0 µ V S = 24V, V GS = 0V 50 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 0 n V GS = 20V Gate-to-Source Reverse Leakage -0 V GS = -20V gfs Forward Transconductance 87 S V S = 5V, I = 6 Q g Total Gate Charge 30 45 Q gs Pre-Vth Gate-to-Source Charge 7.5 V S = 5V Q gs2 Post-Vth Gate-to-Source Charge 3. nc V GS = 4.5V Q gd Gate-to-rain Charge 9.8 I = 6 Q godr Gate Charge Overdrive 9.6 See Figs. 5 & 6 Q sw Switch Charge (Q gs2 Q gd ) 2.9 Q oss Output Charge 8 nc V S = 6V, V GS = 0V R g Gate Resistance.0.6 Ω t d(on) Turn-On elay Time 6 V = 5V, V GS = 4.5V t r Rise Time 9 I = 6 t d(off) Turn-Off elay Time 8 ns R G =.8Ω t f Fall Time See Fig. 8 C iss Input Capacitance 4090 V GS = 0V C oss Output Capacitance 8 pf V S = 5V C rss Reverse Transfer Capacitance 390 =.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 350 mj I R valanche Current c 6 iode Characteristics Parameter Min. Typ. Max. Units Conditions V GS = 0V, I = 250µ Reference to 25 C, I = m V GS = V, I = 20 e Conditions I S Continuous Source Current 3. MOSFET symbol (Body iode) showing the I SM Pulsed Source Current 70 integral reverse G (Body iode)c p-n junction diode. S V S iode Forward Voltage.0 V T J = 25 C, I S = 6, V GS = 0V e t rr Reverse Recovery Time 7 26 ns T J = 25 C, I F = 6, V = 5V Q rr Reverse Recovery Charge 33 50 nc di/dt = 430/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSL) 2 www.irf.com
I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () 00 0 60µs PULSE WITH Tj = 25 C VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 00 0 60µs PULSE WITH Tj = 50 C VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 0. 2.3V 2.3V 0.0 0. 0 V S, rain-to-source Voltage (V) 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 00 0 V S = 5V 60µs PULSE WITH.6.4 I = 2 V GS = V.2 T J = 50 C T J = 25 C.0 0.8 0. 2 3 4 V GS, Gate-to-Source Voltage (V) 0.6-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
I S, Reverse rain Current () I, rain-to-source Current () C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 0000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 5.0 4.0 I = 6 V S = 24V V S = 5V 000 C iss 3.0 00 C oss 2.0 C rss.0 0 0 0.0 0 5 5 20 25 30 35 V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 00 00 OPERTION IN THIS RE LIMITE BY R S (on) 0 0 msec 0µsec T J = 50 C T J = 25 C V GS = 0V.0 0.2 0.4 0.6 0.8.0.2 V S, Source-to-rain Voltage (V) T = 25 C msec Tj = 50 C Single Pulse 0. 0..0 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
I, rain Current () V GS(th), Gate Threshold Voltage (V) 25 2.5 20 2.3 5 2.0.8.5 I = 250µ 5.3 0 25 50 75 0 25 50 T, mbient Temperature ( C).0-75 -50-25 0 25 50 75 0 25 50 T J, Temperature ( C ) Fig 9. Maximum rain Current vs. mbient Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thj ) C/W 0 0. = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE ( THERML RESPONSE ) 0.0 0.00 R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri R 4 R 4 τ 4 τ 4 τ τ Ri ( C/W) τi (sec).242 0.00072 4.759 0.03397 28.506.22 Notes:. uty factor = t / t 2 5.507 44.5 2. Peak T J= P M x Z thj T 0.000 E-006 E-005 0.000 0.00 0.0 0. 0 t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient www.irf.com 5
R S(on), rain-to -Source On Resistance (m Ω) E S, Single Pulse valanche Energy (mj) 2 I = 2 600 400 200 I TOP.0.4 BOTTOM 6 8 00 800 6 T J = 25 C 600 4 T J = 25 C 2 2 3 4 5 6 7 8 9 2 V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage 400 200 0 25 50 75 0 25 50 Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy vs. rain Current V (BR)SS V S R G 20V tp L.U.T IS 0.0Ω 5V RIVER - V I S tp 0 20K K UT L VCC Fig 4. Unclamped Inductive Test Circuit and Waveform Id Fig 5. Gate Charge Test Circuit Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 6. Gate Charge Waveform 6 www.irf.com
-.U.T - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 7. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V S R V S 90% V GS.U.T. R G - V V GS Pulse Width µs uty Factor 0. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms www.irf.com 7
SO-8 Package Outline (imensions are shown in millimeters (inches) ' % ',0,&(6 0, 0; 0,//,0(7(56 0, 0; ( >@ E F ' ( H %6,& %6,& H %6,& %6,& ; H. / \ H.[ & \ ;E >@ ;/ ;F SO-8 Part Marking >@ & % 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,2,//,0(7(5 ',0(6,265(62:,,//,0(7(56>,&(6@ 287/,(&2)250672-('(&287/,(06 ',0(6,2'2(627,&/8'(02/'3527586,26 02/'3527586,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/'3527586,26 02/'3527586,262772(;&(('>@ ',0(6,2,67(/(*72)/(')2562/'(5,*72 68%6757( >@ ;>@ )22735,7 ;>@ ;>@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com
SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 2.7mH, R G = 25Ω, I S = 6. Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 90 C. Note: For the most current drawing please refer to IR website at http://www.irf.com/package ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.08/2007 www.irf.com 9