Optocoupler with Phototransistor Output Description The CNY7 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I IV at mains voltage 3 V For appl. class I III at mains voltage 6 V according to VDE 884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. 4827 B C E 6 5 4 VDE Standards These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler for electrical safety requirements IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction 2 3 A (+) C ( ) n.c. 95 85 Ordering Code CTR Ranking Remarks CNY7 / CNY7G ) 4 to 8% CNY7 2/ CNY7G 2 ) 63 to 25% CNY7 3/ CNY7G 3 ) to 2% CNY7 4/ CNY7G 4 ) 6 to 32% ) G = Leadform.6 mm; G is not market on the body 8 Rev. A3, Jan 99
Features Approvals: BSI: BS EN 43, BS EN 695 (BS 45), BS EN 695 (BS 72), Certificate number 78 and 742 FIMKO (SETI): EN 695, Certificate number 2399 Underwriters Laboratory (UL) 577 recognized, file number E-76222 VDE 884, Certificate number 94778 VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 6 kv peak Isolation test voltage (partial discharge test voltage) V pd =.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Creepage current resistance according to VDE 33/IEC 2 Comparative Tracking Index: CTI = 275 Thickness through insulation.75 mm General features: Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE part resp. IEC 664) Climatic classification 55//2 (IEC 68 part ) Special construction: Therefore, extra low coupling capacity of typical.3 pf, high Common Mode Rejection CTR offered in 4 groups Low temperature coefficient of CTR Coupling System A Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current I F 6 ma Forward surge current t p s I FSM 3 A Power dissipation T amb 25C P V mw Junction temperature T j 25 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p ms I CM ma Power dissipation T amb 25C P V 5 mw Junction temperature T j 25 C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) V IO 3.75 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 55 to + C Storage temperature range T stg 55 to +25 C Soldering temperature 2 mm from case, t s T sd 26 C Rev. A3, Jan 99 9
Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F.25.6 V Junction capacitance V R =, f = MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = ma V CEO 32 V Emitter collector voltage I E = A V ECO 7 V Collector emitter cut-off current V CE = V, I f = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit AC isolation test voltage f = 5 Hz, t = s V IO 3.75 V (RMS) Collector emitter I F = ma, I C = ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = ma, f c khz R L = Coupling capacitance f = MHz c k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = ma CNY7(G)- CTR.4.8 CNY7(G)-2 CTR.63.25 CNY7(G)-3 CTR. 2. CNY7(G)-4 CTR.6 3.2 V CE = 5 V, I F = ma CNY7(G)- CTR.3 CNY7(G)-2 CTR.22 CNY7(G)-3 CTR.34 CNY7(G)-4 CTR.56 Rev. A3, Jan 99
Maximum Safety Ratings (according to VDE 884) see figure This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current I si 3 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25C P si 265 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 6 kv Safety temperature T si 5 C Insulation Rated Parameters (according to VDE 884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage Routine test %, t test = s V pd.6 kv Partial discharge test voltage t Tr = 6 s, t test = s, V IOTM 6 kv Lot test (sample test) (see figure 2) V pd.3 kv Insulation resistance V IO = 5 V R IO 2 V IO = 5 V, R IO T amb = C V IO = 5 V, T amb = 5C R IO 9 (construction test only) P tot Total Power Dissipation ( mw ) 94 982 3 25 Phototransistor Psi ( mw ) 2 5 5 IR-Diode Isi ( ma ) 25 5 75 25 T si Safety Temperature ( C ) 5 V V IOTM V Pd V IOWM V IORM 393 t t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s t Tr = 6 s t 2 t 4 t 3 t test t stres t Figure. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 884 Rev. A3, Jan 99
Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 5 ma, RL = (see figure 3) t d 4. s Rise time t r 7. s Fall time t f 6.7 s Storage time t s.3 s Turn-on time t on. s Turn-off time t off 7. s Turn-on time V S = 5 V, I F = ma, RL = k (see figure 4) t on 25 s Turn-off time t off 42.5 s R G = 5 t p T. I F I F + 5 V I C = 5 ma; Adjusted trough input amplitude I F 96 698 t p = 5 ms Channel I Oscilloscope t p t 95 9 5 Channel II R L M C L 2 pf I C % 9% Figure 3. Test circuit, non-saturated operation I F R G = 5 I F = ma + 5 V I C % t d t r t s t f t t p T. t on t off t p = 5 s 95 843 5 k Channel I Channel II Oscilloscope R L M C L 2 pf pulse dura- delay time rise time turn-on time t p tion t d t r t on (= t d + t r ) t s t f t off (= t s + t f ) storage time fall time turn-off time Figure 4. Test circuit, saturated operation Figure 5. Switching times 2 Rev. A3, Jan 99
Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) 3 25 2 5 5 Coupled device Phototransistor IR-diode 4 8 2 96 7 T amb Ambient Temperature ( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) 95 26 V CE =2V I F = 25 5 75 T amb Ambient Temperature ( C ) Figure 9. Collector Dark Current vs. Ambient Temperature.... I CB Collector Base Current ( ma ).. V S =5V..2.4.6.8..2.4.6.8 2. 96 862 V F Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage. 95 52 Figure. Collector Base Current vs. Forward Current CTR rel Relative Current Transfer Ratio.5.4.3.2...9.8.7.6 V CE =5V I F =ma.5 3 2 2 3 4 5 6 7 8 96 92 T amb Ambient Temperature ( C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature 95 53. V CE =5V.. Figure. Collector Current vs. Forward Current Rev. A3, Jan 99 3
I F =5mA 2mA ma 5mA 2mA ma CTR Current Transfer Ratio ( % ) V CE =5V 95 54.. V CE Collector Emitter Voltage ( V ) Figure 2. Collector Current vs. Collector Emitter Voltage V CEsat Collector Emitter Saturation Voltage ( V )..8.6.4.2 % CTR=5% 2% 95 55 Figure 3. Collector Emitter Saturation Voltage vs. Collector Current 95 57. Figure 5. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) 95 7 5 4 3 2 Saturated Operation V S =5V R L =k 5 5 Figure 6. Turn on / off Time vs. Forward Current t off t on 2 h FE DC Current Gain 95 56 8 6 4 2 V CE =5V.. Figure 4. DC Current Gain vs. Collector Current t on / t off Turn on / Turn off Time ( s ) 2 5 5 t on t off Non Saturated Operation V S =5V R L = 2 4 6 8 95 6 Figure 7. Turn on / off Time vs. Collector Current 4 Rev. A3, Jan 99
Type Date Code (YM) XXXXXX 98 A TK 63 884 V D E Production Location Safety Logo 59 Coupling Company System Logo Indicator Figure 8. Marking example Dimensions of CNY7G in mm weight: ca..5 g creepage distance: air path: 8 mm 8 mm after mounting on PC board 477 Rev. A3, Jan 99 5
Dimensions of CNY7 in mm weight:.5 g creepage distance: air path: 6 mm 6 mm after mounting on PC board 477 6 Rev. A3, Jan 99