NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class SC 88 Package for Small Footprint ( x mm) Pb Free Packages are Available Applications DC DC Conversion Load/Power Switching Single or Dual Cell Li Ion Battery Supplied Devices Cell Phones, MP3s, Digital Cameras, PDAs V (BR)DSS R DS(on) TYP I D Max N Ch V.9 @.5 V.36 @.5 V.63 A. @.5 V P Ch 8. V.3 @.5 V.775 A.5 @.8 V MAXIMUM RATINGS ( unless otherwise noted) Parameter Symbol Value Unit Drain to Source Voltage N Ch V DSS V P Ch 8. Gate to Source Voltage N Ch V GS ± V Continuous Drain Current Steady State (Based on R JA ) Continuous Drain Current Steady State (Based on R JL ) P Ch ±8. N Ch T A = 5 C I D.63 A T A = 85 C.6 P Ch T A = 5 C.775 T A = 85 C.558 N Ch T A = 5 C.9 T A = 85 C.65 P Ch T A = 5 C. T A = 85 C.8 Pulsed Drain Current tp s I DM ±. A Power Dissipation Steady State (Based on R JA ) Power Dissipation Steady State (Based on R JL ) T A = 5 C P D.7 W T A = 85 C. T A = 5 C.55 T A = 85 C.9 Operating Junction and Storage Temperature T J, T STG 55 to 5 Source Current (Body Diode) N Ch I S.63 A P Ch.775 Lead Temperature for Soldering Purposes T L 6 C (/8 from case for s) THERMAL RESISTANCE RATINGS (Note ) Junction to Ambient Typ R JA C/W Steady State Max 6 Junction to Lead (Drain) Typ R JL 9 Steady State Max 6 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using oz Cu area =.953 in sq. C S G D SC 88/SOT 363 CASE 9B STYLE 8 SOT 363 SC 88 (6 LEADS) 3 Top View MARKING DIAGRAM & PIN ASSIGNMENT 6 D G S TC M S G D TC = Device Code M = Date Code = Pb Free Package D G (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 6 5 S Semiconductor Components Industries, LLC, 6 March, 6 Rev. Publication Order Number: NTJD5C/D
NTJD5C ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Parameter Symbol N/P Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain to Source V (BR)DSS N I Breakdown Voltage V GS = V D = 5 A 7 V P I D = 5 A 8..5 Drain to Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current V (BR)DSS N mv/ C / T J P 6. I DSS N V GS = V, V DS = 6 V. A T J = 5 C P V GS = V, V DS = 6. V. I GSS N V V DS = V GS = ± V A P V GS = ±8. ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) N I V GS = V D = 5 A.6.9.5 V DS P I D = 5 A.5.83. Gate Threshold Temperature Coefficient Drain to Source On Resistance V GS(TH) / N. mv/ C T J P. R DS(on) N V GS =.5 V I D =.63 A.9.375 P V GS =.5 V, I D =.57 A..3 N V GS =.5 V, I D =. A.36.5 P V GS =.5 V, I D =.8 A.3.6 P V GS =.8 V, I D =. A.5.9 Forward Transconductance g FS N V DS =. V I D =.63 A. S P V DS =. V, I D =.57 A. CHARGES AND CAPACITANCES Input Capacitance C ISS N V DS = V 33 6 pf P V DS = 8.V 6 5 Output Capacitance C OSS N V f = MHz, V GS = V DS = V 3 P V DS = 8. V 38 55 Reverse Transfer Capacitance C RSS N V DS = V.8 5. P V DS = 8. V 8 Total Gate Charge Q G(TOT) N V GS =.5 V, V DS = V, I D =.7 A.3 3. nc P V GS =.5 V, V DS = 5. V, I D =.6 A.. Threshold Gate Charge Q G(TH) N V GS =.5 V, V DS = V, I D =.7 A. P V GS =.5 V, V DS = 5. V, I D =.6 A. Gate to Source Charge Q GS N V GS =.5 V, V DS = V, I D =.7 A. P V GS =.5 V, V DS = 5. V, I D =.6 A.5 Gate to Drain Charge Q GD N V GS =.5 V, V DS = V, I D =.7 A. P V GS =.5 V, V DS = 5. V, I D =.6 A.5 SWITCHING CHARACTERISTICS (Note 3) Turn On Delay Time t d(on) N.83 s Rise Time t r V GS =.5 V, V DD = V,.7 Turn Off Delay Time t d(off) I D =.5 A, R G =.786 Fall Time t f.56 Turn On Delay Time t d(on) P.3 Rise Time t r V GS =.5 V, V DD =. V,.3 Turn Off Delay Time t d(off) I D =.5 A, R G = 8..5 Fall Time t f.36 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD N I V GS = V, S =.3 A.76. V P I S =.3 A.76. N I V GS = V, S =.3 A.63 P I S =.3 A.63 Reverse Recovery Time t RR N V GS = V, I S =.3 A. s P d IS /d t = 9 A/ s I S =.3 A.78. Pulse Test: pulse width 3 s, duty cycle %. 3. Switching characteristics are independent of operating junction temperatures.
NTJD5C TYPICAL N CHANNEL PERFORMANCE CURVES ( unless otherwise noted) I D, DRAIN CURRENT (AMPS)...8.6.. V GS =.5 V to. V V GS = V.8 V.6 V. V. V 6 8 V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS)..8.6.. V DS V 5 C..8..6. V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ).7.6.5.5..3.. V GS =.5 V...6.8.. I D, DRAIN CURRENT (AMPS) R DS(on), DRAIN TO SOURCE RESISTANCE ( ).7 V GS =.5 V.6..3.....6.8.. I D, DRAIN CURRENT (AMPS) Figure 3. On Resistance vs. Drain Current and Temperature Figure. On Resistance vs. Drain Current and Temperature R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED).8.6...8 I D =.63 A V GS =.5 V and.5 V.6 5 5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( C) Figure 5. On Resistance Variation with Temperature C, CAPACITANCE (pf) 8 6 V GS = V C iss C oss C rss 5 5 DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance Variation 3
NTJD5C TYPICAL N CHANNEL PERFORMANCE CURVES ( unless otherwise noted) V GS, GATE TO SOURCE VOLTAGE (VOLTS) 5 3 Q GS Q GD Q G(TOT) V GS T I D =.63 A. J = 5 C...6.8.....6.8 Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) Figure 7. Gate to Source and Drain to Source Voltage vs. Total Charge I S, SOURCE CURRENT (AMPS).7.6.5..3. V GS = V Figure 8. Diode Forward Voltage vs. Current
NTJD5C TYPICAL P CHANNEL PERFORMANCE CURVES ( unless otherwise noted) I D, DRAIN CURRENT (AMPS).. V GS =.5 V to.6 V V DS V V GS =. V. V.8 V..8.6...6 V. V. V 6 V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) 8 I D, DRAIN CURRENT (AMPS).8.6.. 5 C..8..6. V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure 9. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ).5..3.. V GS =.5 V...6.8.. I D, DRAIN CURRENT (AMPS) Figure. On Resistance vs. Drain Current and Temperature R DS(on), DRAIN TO SOURCE RESISTANCE ( ).5..3.. V GS =.5 V...6.8.. I D, DRAIN CURRENT (AMPS) Figure. On Resistance vs. Drain Current and Temperature R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED).6...8 I D =.7 A V GS =.5 V and.5 V C, CAPACITANCE (pf) 3 8 6 V GS = V C iss C oss C rss.6 5 5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( C) Figure 3. On Resistance Variation with Temperature 8 6 GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure. Capacitance Variation 5
NTJD5C TYPICAL P CHANNEL PERFORMANCE CURVES ( unless otherwise noted) V GS, GATE TO SOURCE VOLTAGE (VOLTS) 5 3 Q GS Q GD Q G(TOT) V GS T I D =.6 A. J = 5 C..8..6....6.8 Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) Figure 5. Gate to Source and Drain to Source Voltage vs. Total Charge I S, SOURCE CURRENT (AMPS).7.6.5..3. V GS = V Figure 6. Diode Forward Voltage vs. Current 6
NTJD5C ORDERING INFORMATION Device Package Shipping NTJD5CT SOT 363 3 / Tape & Reel NTJD5CTG SOT 363 (Pb Free) 3 / Tape & Reel NTJD5CT SOT 363 3 / Tape & Reel NTJD5CTG SOT 363 (Pb Free) 3 / Tape & Reel NTJD5CT SOT 363, / Tape & Reel NTJD5CTG SOT 363 (Pb Free), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 7
NTJD5C PACKAGE DIMENSIONS SC 88/SC7 6/SOT 363 CASE 9B ISSUE W D e NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. 3. 9B OBSOLETE, NEW STANDARD 9B. H E 6 5 3 E A b 6 PL. (.8) M E M A3 L C MILLIMETERS DIM MIN NOM MAX A.8.95. A..5. A3 b...3 C...5 D.8.. E.5.5.35 e.65 BSC L...3 H E... STYLE 6: PIN. SOURCE. GATE 3. DRAIN. SOURCE 5. GATE 6. DRAIN INCHES MIN NOM MAX.3.37.3.... REF.8 REF..8...5..7.78.86.5.9.53.6 BSC..8..78.8.86 A SOLDERING FOOTPRINT*.5.97.65.5..57.65.5.9.78 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Phoenix, Arizona 858 3 USA Phone: 8 89 77 or 8 3 386 Toll Free USA/Canada Fax: 8 89 779 or 8 3 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, Japan 53 5 Phone: 8 3 5773 385 8 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTJD5C/D