V RRM = 5500 V (AV)M = 585 A SM = 18 10 3 A V (T0) = 4.5 V r T = 1.3 mw V DClink = 3300 V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Patented free-floating technology Industry standard housing Cosmic radiation withstand rating Low on-state and switching losses Optimized for snubberless operation Doc. No. 5SYA1116-01 Oct. 06 Blocking Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage V RRM f = 50 Hz, t p = 10ms, T vj = 115 C 5500 V Permanent DC voltage for 100 FIT V DC-link Ambient cosmic radiation at sea level in open 3300 V failure rate air. (100% Duty) Permanent DC voltage for 100 FIT V DC-link Ambient cosmic radiation at sea level in open 3900 V failure rate air. (5% Duty) Repetitive peak reverse I RRM V R = V RRM, T vj = 115 C 30 ma Mechanical data Mounting force F m 42 40 46 kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 200 m/s 2 Weight m 0.83 kg Housing thickness H 26.2 26.6 mm Surface creepage distance D S 30 mm Air strike distance D a 20 mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
On-state Max. average on-state (AV)M Half sine wave, T C = 70 C 585 A Max. RMS on-state (RMS) 920 A Max. peak non-repetitive surge Limiting load integral Max. peak non-repetitive surge SM t 18 10 3 p = 10 ms, T vj = 115 C, V R = 0 V A I 2 t 1.62 10 6 A 2 s SM t 40 10 3 p = 1 ms, T vj = 115 C, V R = 0 V A Limiting load integral I 2 t 800 10 3 A 2 s On-state voltage V F = 1800 A, T vj = 115 C 6.85 V Threshold voltage V (T0) T vj = 115 C 4.5 V Slope resistance = 400...2500 A 1.3 mω r T Turn-on Peak forward recovery voltage V FRM d /dt = 1000 A/µs, T vj = 115 C 370 V Turn-off Max. decay rate of on-state di/dt crit M = 1800 A, T vj = 115 C V DC-link = 3300 V 440 A/µs Reverse recovery I RM M = 1800 A, V DC-Link = 3300 V 900 A Turn-off energy E rr -d /dt = 440 A/µs, L CL = 300 nh C CL = 10 µf, R CL = 0.65 Ω, T vj = 115 C, D CL = 5SDF 08H6005 6.5 J Doc. No. 5SYA1116-01 Oct. 06 page 2 of 6
Thermal Maximum rated values Note 1 Operating junction temperature range T vj -40 115 C Storage temperature range T stg -40 125 C Thermal resistance junction to case Thermal resistance case to heatsink R th(j-c) R th(j-c)a R th(j-c)c R th(c-h) R th(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 12 K/kW 24 K/kW 24 K/kW 3 K/kW 6 K/kW Z Analytical function for transient thermal impedance: th(j-c) = n i= 1 R th i (1- e -t/ τ i i 1 2 3 4 R th i (K/kW) 7.713 2.766 1.044 0.480 τ i (s) 0.5316 0.0668 0.0078 0.0020 ) Fig. 1 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values) Doc. No. 5SYA1116-01 Oct. 06 page 3 of 6
[A] 3000 E rr [J] 7 2500 Tj = 115 C 6 T j = 115 C di F /dt = 440 A/µs V DClink = 3300 V 2000 5 4 1500 3 1000 2 500 1 0 4 5 6 7 8 9 V F [V] 0 0 400 800 1200 1600 2000 Q [A] Fig. 2 Max. on-state voltage characteristics Fig. 3 Diode turn-off energy per pulse vs. turn-off I rr [A] 1000 900 800 T j = 115 C di F /dt = 440 A/µs V DClink = 3300 V 700 600 500 400 300 200 100 0 0 400 800 1200 1600 2000 Q [A] Fig. 4 Diode reverse recovery vs. turn-off Fig. 5 Diode Safe Operating Area Doc. No. 5SYA1116-01 Oct. 06 page 4 of 6
V F, V FR d /dt -d /dt V F V F Q rr t fr tfr (typ) 10 µs I RM V R t Fig. 6 General and voltage waveforms L i L CL R S D CL V LC C CL DUT L Load Fig. 7 Test circuit. Doc. No. 5SYA1116-01 Oct. 06 page 5 of 6
Fig. 8 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr Titel 5SYA 2036 5SZK 9104 5SZK 9105 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for version of documents. ABB Switzerland Ltd Doc. No. 5SYA1116-01 Oct. 06 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors