IX7R1N XPT CS 1 I C5 1 1.8 C(sat) Boost Chopper Part number IX7R1N Backside: isolated 3 1 Features / dvantages: pplications: Package: SOT-7B (minibloc) asy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 1 µsec. - very low gate charge - low MI - square RBSO @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low C(sat) C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, Fans Isolation oltage: 3 ~ Industry standard outline RoHS compliant poxy meets UL 9- Base plate: Copper internally DCB isolated dvanced power cycling ither emitter terminal can be used as main or Kelvin emitter 1 IXYS all rights reserved Data according to IC 677and per semiconductor unless otherwise specified 178a
IX7R1N Symbol CS GS GM 5 8 collector current Conditions T C 5 C T 8 C Ratings min. typ. max. 1 P tot total power dissipation T C 5 C 35 W C(sat) collector emitter saturation voltage 5; G 15 T J 5 C 1.8.1 T J.1 G(th) gate emitter threshold voltage m; G C T J 5 C 5. 5.9 6.5 S collector emitter leakage current C CS; G T J 5 C.1 m T.1 m I GS t RBSO Definition collector emitter voltage max. DC gate voltage max. transient gate emitter voltage gate emitter leakage current ± G T 5 C J QG(on) total gate charge C 6 ; G 15 ; 5 19 nc t r t t f d(on) d(off) on off M SCSO t SC turn-on delay time 7 ns current rise time ns inductive load T J turn-off delay time 5 ns C 6; 5 current fall time 1 ns G ±15 ; R G 15 Ω turn-on energy per pulse.5 mj turn-off energy per pulse 5.5 mj reverse bias safe operating area G ±15 ; R G 15 Ω T J 15 Cmax 1 short circuit safe operating area short circuit duration Cmax 1 9 ; ±15 C G C T I SC short circuit current R G 15 Ω; non-repetitive R thjc thermal resistance junction to case.35 K/W R thch thermal resistance case to heatsink.1 K/W J J ± ±3 1 65 5 1 Unit n µs Diode RRM I F5 max. repetitive reverse voltage T 5 C J forward current T 5 C I F 8 T C 8 C F forward voltage I 6 T 5 C F C J T J I R reverse current R RRM T J 5 C.1 m T J.3 m Qrr reverse recovery charge 8 µc R 6 IRM max. reverse recovery current 6 -di F /dt 1 /µs T J t rr reverse recovery time 35 ns I F 6; G rec reverse recovery energy.5 mj R thjc thermal resistance junction to case.6 K/W R thch thermal resistance case to heatsink.1 K/W 1.95 1 85 51. 1 IXYS all rights reserved Data according to IC 677and per semiconductor unless otherwise specified 178a
IX7R1N Package SOT-7B (minibloc) Ratings Symbol Definition Conditions min. typ. max. Unit I RMS RMS current per terminal 15 T J virtual junction temperature - 15 C T op operation temperature - 15 C T stg storage temperature - 15 C Weight M D M T d Spp/pp d Spb/pb ISOL mounting torque 1.1 terminal torque 1.1 creepage distance on surface striking distance through air isolation voltage t 1 second t 1 minute terminal to terminal terminal to backside 5/6 Hz, RMS; I ISOL 1 m 1.5 3. 8.6 6.8 3 5 3 1.5 1.5 g Nm Nm mm mm Logo Product Marking Part No. XXXXX Zyyww abcd ssembly Line DateCode ssembly Code Part description I X 7 R 1 N XPT Gen 1 / std Current Rating Boost Chopper Reverse oltage [] SOT-7B (minibloc) Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. IX7R1N IX7R1N Tube 1 5118 quivalent Circuits for Simulation * on die level T J 15 C I Diode R max threshold voltage R max slope resistance * 1.1 8 1. 15 mω 1 IXYS all rights reserved Data according to IC 677and per semiconductor unless otherwise specified 178a
IX7R1N Outlines SOT-7B (minibloc) 3 1 1 IXYS all rights reserved Data according to IC 677and per semiconductor unless otherwise specified 178a
IX7R1N 1 8 G 15 1 8 G 15 17 19 13 11 6 T J 5 C T J 6 T J 9 1 3 C [] Fig. 1 Typ. output characteristics 1 3 C [] Fig. Typ. output characteristics 1 8 15 5 C 6 6 G [] 1 T J 5 T J 5 C 5 6 7 8 9 1 11 1 13 G [] Fig. 3 Typ. tranfer characteristics 8 1 16 Q G [nc] Fig. Typ. turn-on gate charge 1 8 R G 15 C 6 G ±15 T J on off 6. 5.5 off 6 [mj] 5. [mj].5 on 5 C 6 G ±15 T J 6 8 1 1 Fig. 5 Typ. switching energy vs. collector current. 1 16 8 3 R G [ ] Fig. 6 Typ. switching energy vs. gate resistance 1 IXYS all rights reserved Data according to IC 677and per semiconductor unless otherwise specified 178a
IX7R1N Diode 1 1 1 1 T J 6 R 8 1 1 I F 6 T J T J 5 C..5 1. 1.5..5 3. 6 7 8 9 1 11 1 13 F [] di F /dt [/µs] Fig. 7 Typ. Forward current versus F Q rr [µc] 8 6 6 3 Fig. 8 Typ. reverse recov.charge Q rr vs. di/dt 9 8 7 6 T J 6 R 1 6 7 6 5 T J 15 C R 6 I RR 5 3 1 3 t rr [ns] 3 1 1 6 3 6 7 8 9 1 11 1 13 di F /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 6 7 8 9 1 11 1 13 di F /dt [/µs] Fig. 1 Typ. recovery time t rr versus di/dt. 3. T J R 6 1 1 Diode. rec 6 [mj] 1.6 3 Z thjc.1 [K/W].8. 6 7 8 9 1 11 1 13 di F /dt [/µs] Fig. 11 Typ. recovery energy rec versus di/dt.1.1.1.1 1 1 t p [s] Fig. 1 Typ. transient thermal impedance 1 IXYS all rights reserved Data according to IC 677and per semiconductor unless otherwise specified 178a